WO2000000561A1 - Chemical mechanical polishing slurry useful for copper/tantalum substrates - Google Patents

Chemical mechanical polishing slurry useful for copper/tantalum substrates Download PDF

Info

Publication number
WO2000000561A1
WO2000000561A1 PCT/US1999/014556 US9914556W WO0000561A1 WO 2000000561 A1 WO2000000561 A1 WO 2000000561A1 US 9914556 W US9914556 W US 9914556W WO 0000561 A1 WO0000561 A1 WO 0000561A1
Authority
WO
WIPO (PCT)
Prior art keywords
slurry
substrate
chemical mechanical
mechanical polishing
polishing slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/014556
Other languages
English (en)
French (fr)
Inventor
Vlasta Brusic Kaufman
Rodney C. Kistler
Shumin Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
CMC Materials LLC
Original Assignee
Cabot Corp
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp, Cabot Microelectronics Corp filed Critical Cabot Corp
Priority to AU47234/99A priority Critical patent/AU4723499A/en
Priority to EP99930776A priority patent/EP1090083B1/en
Priority to IL14030299A priority patent/IL140302A0/xx
Priority to DE69902539T priority patent/DE69902539T2/de
Priority to CA002335034A priority patent/CA2335034A1/en
Priority to JP2000557316A priority patent/JP4044287B2/ja
Publication of WO2000000561A1 publication Critical patent/WO2000000561A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the terms “tantalum” and “tantalum containing alloys” are used interchangeably herein to refer to the tantalum and/or tantalum nitride adhesion layer under the conductive layer such as a conductive copper layer.
  • the first chemical mechanical polishing slurry is useful for polishing metals, especially copper and copper alloy containing metal layers associated with a substrate selected from the group including integrated circuits, thin films, multiple level semiconductors, and wafers.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
PCT/US1999/014556 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates Ceased WO2000000561A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AU47234/99A AU4723499A (en) 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates
EP99930776A EP1090083B1 (en) 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates
IL14030299A IL140302A0 (en) 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates
DE69902539T DE69902539T2 (de) 1998-06-26 1999-06-25 Suspension zum chemisch-mechanischen polieren von kupfer/tantalum-substraten
CA002335034A CA2335034A1 (en) 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates
JP2000557316A JP4044287B2 (ja) 1998-06-26 1999-06-25 銅／タンタル基体に有用な化学的機械研磨スラリー

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/105,065 US6217416B1 (en) 1998-06-26 1998-06-26 Chemical mechanical polishing slurry useful for copper/tantalum substrates
US09/105,065 1998-06-26

Publications (1)

Publication Number Publication Date
WO2000000561A1 true WO2000000561A1 (en) 2000-01-06

Family

ID=22303862

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/014556 Ceased WO2000000561A1 (en) 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates

Country Status (13)

Country Link
US (2) US6217416B1 (enExample)
EP (1) EP1090083B1 (enExample)
JP (2) JP4044287B2 (enExample)
KR (1) KR100491061B1 (enExample)
CN (1) CN1174063C (enExample)
AU (1) AU4723499A (enExample)
CA (1) CA2335034A1 (enExample)
DE (1) DE69902539T2 (enExample)
ID (1) ID27536A (enExample)
IL (1) IL140302A0 (enExample)
MY (1) MY117693A (enExample)
TW (1) TW585899B (enExample)
WO (1) WO2000000561A1 (enExample)

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JP2000252242A (ja) * 1998-12-28 2000-09-14 Hitachi Chem Co Ltd 金属用研磨液及びそれを用いた研磨方法
EP1116762A1 (en) * 2000-01-12 2001-07-18 JSR Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6267644B1 (en) 1998-11-06 2001-07-31 Beaver Creek Concepts Inc Fixed abrasive finishing element having aids finishing method
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US6291349B1 (en) 1999-03-25 2001-09-18 Beaver Creek Concepts Inc Abrasive finishing with partial organic boundary layer
US6293851B1 (en) 1998-11-06 2001-09-25 Beaver Creek Concepts Inc Fixed abrasive finishing method using lubricants
SG83822A1 (en) * 1999-10-27 2001-10-16 Applied Materials Inc Cmp slurry for planarizing metals
WO2001041973A3 (en) * 1999-12-07 2002-01-03 Cabot Microelectronics Corp Chemical-mechanical polishing method
WO2001077241A3 (en) * 2000-04-05 2002-02-07 Applied Materials Inc Composition for metal cmp with low dishing and overpolish insensitivity
WO2001078128A3 (en) * 2000-04-06 2002-02-07 Applied Materials Inc Abrasive-free metal cmp in passivation domain
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US6447371B2 (en) 2002-09-10
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TW585899B (en) 2004-05-01
US6217416B1 (en) 2001-04-17
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IL140302A0 (en) 2002-02-10

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