JP4043794B2 - 窒化物系化合物半導体素子の実装方法 - Google Patents

窒化物系化合物半導体素子の実装方法 Download PDF

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Publication number
JP4043794B2
JP4043794B2 JP2002027983A JP2002027983A JP4043794B2 JP 4043794 B2 JP4043794 B2 JP 4043794B2 JP 2002027983 A JP2002027983 A JP 2002027983A JP 2002027983 A JP2002027983 A JP 2002027983A JP 4043794 B2 JP4043794 B2 JP 4043794B2
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nitride
compound semiconductor
substrate
density
semiconductor device
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Expired - Fee Related
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JP2002027983A
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Japanese (ja)
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JP2003229631A5 (https=
JP2003229631A (ja
Inventor
好司 玉村
健作 元木
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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Publication of JP2003229631A5 publication Critical patent/JP2003229631A5/ja
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  • Semiconductor Lasers (AREA)
JP2002027983A 2002-02-05 2002-02-05 窒化物系化合物半導体素子の実装方法 Expired - Fee Related JP4043794B2 (ja)

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JP2002027983A JP4043794B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体素子の実装方法

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JP2002027983A JP4043794B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体素子の実装方法

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JP2003229631A JP2003229631A (ja) 2003-08-15
JP2003229631A5 JP2003229631A5 (https=) 2005-08-18
JP4043794B2 true JP4043794B2 (ja) 2008-02-06

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916584B2 (ja) 2003-04-24 2007-05-16 シャープ株式会社 窒化物半導体レーザ装置
JP4601944B2 (ja) * 2003-12-12 2010-12-22 シャープ株式会社 窒化物半導体発光素子の位置決め方法と、この位置決め方法を用いた窒化物半導体装置の製造方法
JP4868114B2 (ja) * 2005-08-11 2012-02-01 日立電線株式会社 窒化物系半導体基板およびその製造方法
JP5053102B2 (ja) 2006-01-11 2012-10-17 パナソニック株式会社 窒化物半導体発光素子、窒化物半導体発光装置及びその製造方法
JP5874428B2 (ja) * 2012-02-15 2016-03-02 富士電機株式会社 キャリブレート用ターゲット治具および半導体製造装置

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