JP2003229631A5 - - Google Patents
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- Publication number
- JP2003229631A5 JP2003229631A5 JP2002027983A JP2002027983A JP2003229631A5 JP 2003229631 A5 JP2003229631 A5 JP 2003229631A5 JP 2002027983 A JP2002027983 A JP 2002027983A JP 2002027983 A JP2002027983 A JP 2002027983A JP 2003229631 A5 JP2003229631 A5 JP 2003229631A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- compound semiconductor
- semiconductor device
- density
- based compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 26
- 150000004767 nitrides Chemical class 0.000 claims 15
- 150000001875 compounds Chemical class 0.000 claims 12
- 230000007547 defect Effects 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 6
- -1 nitride compound Chemical class 0.000 claims 5
- 230000002950 deficient Effects 0.000 claims 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027983A JP4043794B2 (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体素子の実装方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002027983A JP4043794B2 (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体素子の実装方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003229631A JP2003229631A (ja) | 2003-08-15 |
| JP2003229631A5 true JP2003229631A5 (https=) | 2005-08-18 |
| JP4043794B2 JP4043794B2 (ja) | 2008-02-06 |
Family
ID=27749341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002027983A Expired - Fee Related JP4043794B2 (ja) | 2002-02-05 | 2002-02-05 | 窒化物系化合物半導体素子の実装方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4043794B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3916584B2 (ja) | 2003-04-24 | 2007-05-16 | シャープ株式会社 | 窒化物半導体レーザ装置 |
| JP4601944B2 (ja) * | 2003-12-12 | 2010-12-22 | シャープ株式会社 | 窒化物半導体発光素子の位置決め方法と、この位置決め方法を用いた窒化物半導体装置の製造方法 |
| JP4868114B2 (ja) * | 2005-08-11 | 2012-02-01 | 日立電線株式会社 | 窒化物系半導体基板およびその製造方法 |
| JP5053102B2 (ja) | 2006-01-11 | 2012-10-17 | パナソニック株式会社 | 窒化物半導体発光素子、窒化物半導体発光装置及びその製造方法 |
| JP5874428B2 (ja) * | 2012-02-15 | 2016-03-02 | 富士電機株式会社 | キャリブレート用ターゲット治具および半導体製造装置 |
-
2002
- 2002-02-05 JP JP2002027983A patent/JP4043794B2/ja not_active Expired - Fee Related
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