FR2888039B1 - PROCEDE DE FABRICATION D'UNE COUCHE DE COMPOSE A BASE DE NITRURE, D'UN SUBSTRAT DE GaN ET D'UN DISPOSITIF D'EMISSION DE LUMIERE A SEMI-CONDUCTEUR A BASE DE NITRURE A STRUCTURE VERTICALE - Google Patents

PROCEDE DE FABRICATION D'UNE COUCHE DE COMPOSE A BASE DE NITRURE, D'UN SUBSTRAT DE GaN ET D'UN DISPOSITIF D'EMISSION DE LUMIERE A SEMI-CONDUCTEUR A BASE DE NITRURE A STRUCTURE VERTICALE

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Publication number
FR2888039B1
FR2888039B1 FR0605561A FR0605561A FR2888039B1 FR 2888039 B1 FR2888039 B1 FR 2888039B1 FR 0605561 A FR0605561 A FR 0605561A FR 0605561 A FR0605561 A FR 0605561A FR 2888039 B1 FR2888039 B1 FR 2888039B1
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FR
France
Prior art keywords
light emitting
emitting device
semiconductor light
compound layer
gan substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0605561A
Other languages
English (en)
Other versions
FR2888039A1 (fr
Inventor
Soo Min Lee
Cheol Kyu Kim
Jaeun Yoo
Sung Hwan Jang
Masayoshi Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of FR2888039A1 publication Critical patent/FR2888039A1/fr
Application granted granted Critical
Publication of FR2888039B1 publication Critical patent/FR2888039B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
FR0605561A 2005-06-21 2006-06-21 PROCEDE DE FABRICATION D'UNE COUCHE DE COMPOSE A BASE DE NITRURE, D'UN SUBSTRAT DE GaN ET D'UN DISPOSITIF D'EMISSION DE LUMIERE A SEMI-CONDUCTEUR A BASE DE NITRURE A STRUCTURE VERTICALE Active FR2888039B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050053331A KR100638869B1 (ko) 2005-06-21 2005-06-21 질화물계 화합물층을 형성하는 방법 및 이를 이용한 ＧａＮ기판 및 수직구조 질화물계 반도체 발광소자를 제조하는방법

Publications (2)

Publication Number Publication Date
FR2888039A1 FR2888039A1 (fr) 2007-01-05
FR2888039B1 true FR2888039B1 (fr) 2016-11-25

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Country Status (5)

Country Link
US (2) US7569461B2 (fr)
JP (1) JP4509973B2 (fr)
KR (1) KR100638869B1 (fr)
DE (1) DE102006028137B4 (fr)
FR (1) FR2888039B1 (fr)

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US8222669B2 (en) * 2008-03-27 2012-07-17 Nitek, Inc. Mixed source growth apparatus and method of fabricating III-nitride ultraviolet emitters
KR100978568B1 (ko) 2008-04-30 2010-08-27 삼성엘이디 주식회사 질화물 반도체 발광소자의 제조 방법
WO2009148253A2 (fr) * 2008-06-02 2009-12-10 고려대학교 산학협력단 Substrat de support utilise dans la fabrication d’un dispositif electroluminescent semiconducteur et dispositif comprenant ledit substrat
WO2009146583A1 (fr) * 2008-06-02 2009-12-10 Hong Kong Applied Science and Technology Research Institute Co. Ltd Tranche semi-conductrice, dispositif semi-conducteur et procédés de fabrication de tranche et de dispositif semi-conducteurs
KR101525076B1 (ko) * 2008-12-15 2015-06-03 삼성전자 주식회사 발광 소자의 제조 방법
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KR20110123118A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
US8318563B2 (en) * 2010-05-19 2012-11-27 National Semiconductor Corporation Growth of group III nitride-based structures and integration with conventional CMOS processing tools
CN102117869B (zh) * 2011-01-21 2013-12-11 厦门市三安光电科技有限公司 一种剥离发光二极管衬底的方法
FR2978601B1 (fr) * 2011-07-29 2016-05-13 Nanovation Procede de fabrication d'un substrat de gan ou d'un dispositif a base de gan sur substrat natif de type gan, utilisant une fine couche tampon sacrificielle
US8846482B2 (en) * 2011-09-22 2014-09-30 Avogy, Inc. Method and system for diffusion and implantation in gallium nitride based devices
US8981432B2 (en) * 2012-08-10 2015-03-17 Avogy, Inc. Method and system for gallium nitride electronic devices using engineered substrates
EP2908330B1 (fr) * 2012-10-12 2021-05-19 Sumitomo Electric Industries, Ltd. Substrat composite à nitrure du groupe iii, procédé pour sa fabrication et procédé de fabrication d'un dispositif semi-conducteur à nitrure du groupe iii
KR20140104756A (ko) 2013-02-21 2014-08-29 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
KR101471621B1 (ko) * 2013-08-14 2014-12-11 광주과학기술원 습식식각을 통한 GaN 기판 분리방법
KR101591677B1 (ko) * 2014-09-26 2016-02-18 광주과학기술원 고품위 질화물계 반도체 성장방법
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WO2020180785A1 (fr) * 2019-03-01 2020-09-10 The Regents Of The University Of California Procédé d'aplatissement d'une surface sur une couche de croissance latérale épitaxiale
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Also Published As

Publication number Publication date
US20060286777A1 (en) 2006-12-21
FR2888039A1 (fr) 2007-01-05
US8026156B2 (en) 2011-09-27
US7569461B2 (en) 2009-08-04
KR100638869B1 (ko) 2006-10-27
US20090258453A1 (en) 2009-10-15
JP4509973B2 (ja) 2010-07-21
DE102006028137A1 (de) 2007-01-25
DE102006028137B4 (de) 2008-04-10
JP2007001857A (ja) 2007-01-11

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