JP5443334B2 - 実装基板およびその製造方法 - Google Patents
実装基板およびその製造方法 Download PDFInfo
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- JP5443334B2 JP5443334B2 JP2010294622A JP2010294622A JP5443334B2 JP 5443334 B2 JP5443334 B2 JP 5443334B2 JP 2010294622 A JP2010294622 A JP 2010294622A JP 2010294622 A JP2010294622 A JP 2010294622A JP 5443334 B2 JP5443334 B2 JP 5443334B2
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- 239000000758 substrate Substances 0.000 title claims description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000011888 foil Substances 0.000 claims description 164
- 238000007747 plating Methods 0.000 claims description 83
- 239000010949 copper Substances 0.000 claims description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 71
- 229910052802 copper Inorganic materials 0.000 claims description 71
- 238000010438 heat treatment Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 26
- 238000009713 electroplating Methods 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 238000000227 grinding Methods 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 235000001674 Agaricus brunnescens Nutrition 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000004873 anchoring Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 230000017525 heat dissipation Effects 0.000 description 25
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910001111 Fine metal Inorganic materials 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/732—Location after the connecting process
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Description
銅メッキ層22を素子固着電極用貫通孔21を埋設するように成長させている点にある。これは従来のスルーホールメッキでは両面の導電箔から銅メッキ層を析出させていたのとは根本的に異なり、大面積の素子固着電極用貫通孔21であっても確実に素子固着電極用貫通孔21を埋設するまで電解銅メッキを続けることができる。
以下に本実施の形態の一例として、レーザを用いたドライエッチングにより実装基板を製造する方法を説明する。
以下に本実施の形態の他の一例として、NC工作機(NCルーター)を用いた切削加工で実装基板を製造する方法を説明する。なお、工程の一部は前述の実施例1の工程と重複するため、ここでは異なる工程のみを詳細に説明していく。
2 枠部
5 位置合わせ孔
7 マーク
10 絶縁基板
11 第1の導電箔
12 第2の導電箔
13 第1電極部
14 第2電極部
20 素子載置部
21 素子載置用貫通孔
22 メッキ層
23、23a、24a、24b、24e 導電性金属層
27、28 分離溝
30 金属細線
31 発熱素子
32 第1電極
33 第2電極
34 接着剤
35 透明樹脂
40、41 フィルム
50 発光装置
Claims (9)
- 絶縁基板の両主面に設けた第1の導電箔および第2の導電箔と、
行列状に多数個配列され、前記絶縁基板を貫通し前記第2の導電箔の裏面をその底部に露出し、スルーホール孔よりも大きく、かつ、素子固着電極部の上に載置される発熱素子よりも大きく形成される素子固着電極用貫通孔と、
前記各素子固着電極用貫通孔を充填し、前記素子固着電極用貫通孔の底部の前記第2の導電箔の裏面から前記第1の導電箔表面にキノコ状に飛び出るまで電解メッキ層で埋設された前記素子固着電極部と、
行列状に多数個配列され、前記第1の導電箔と前記第2の導電箔と前記絶縁基板を貫通する前記スルーホール孔と、
前記第1の導電箔で所望のパターンに形成された第1電極部と、
前記第2の導電箔で所望のパターンに形成された第2電極部と、
前記第1電極部と前記第2電極部とを接続するスルーホールメッキ層を具備することを特徴とする実装基板。 - 前記素子固着電極部の体積はその上に載置される前記発熱素子の発熱により前記絶縁基板の厚みを選択して変えることを特徴とする請求項1に記載の実装基板。
- 前記各素子固着電極部、前記各第1電極部および前記各第2電極部はダイシングラインで囲まれていることを特徴とする請求項1に記載の実装基板。
- 両主面には第1の導電箔および第2の導電箔が貼着された絶縁基板を準備する工程と、
素子固着電極部を形成する領域の前記第1の導電箔を選択的に除去し、前記絶縁基板を露出する工程と、
前記絶縁基板を選択的にドライエッチングして、スルーホール孔よりも大きく、かつ、前記素子固着電極部の上に載置される発熱素子よりも大きく形成される素子固着電極用貫通孔を形成し、前記第2の導電箔の裏面を検出してドライエッチングを停止し、前記素子固着電極用貫通孔の底面に前記第2の導電箔の裏側を露出した前記素子固着電極用貫通孔を形成する工程と、
前記第1および前記第2の導電箔の表面をフィルムで被覆する工程と、
電解メッキにより前記素子固着電極用貫通孔に底部側に露出する前記第2の導電箔の裏面から前記第1の導電箔表面にキノコ状に飛び出るまで銅メッキ層を形成し、前記銅メッキ層で前記素子固着電極用貫通孔を埋設する工程と、
前記銅メッキ層の表面を平坦に研削し、平坦化する工程と、
前記第1の導電箔と前記第2の導電箔と前記絶縁基板を貫通する前記スルーホール孔を形成する工程と、
スルーホールメッキにより前記第1の導電箔および前記第2の導電箔を接続するスルーホールメッキ層を形成する工程と、
前記第1および第2の導電箔を所望のパターンにエッチングして第1電極部と第2電極部を形成する工程とを具備することを特徴とする実装基板の製造方法。 - 前記銅メッキ層で前記素子固着電極用貫通孔を充填する工程において、前記銅メッキ層は前記第1の導電箔に貼着した前記フィルム表面より突出させることを特徴とする請求項4に記載の実装基板の製造方法。
- 前記銅メッキ層の表面を平坦に研削し、平坦化する工程において、前記銅メッキ層を研削後にフラッシュエッチングすることを特徴とする請求項4に記載の実装基板の製造方法。
- 一主面に第1の導電箔が貼着された絶縁基板を準備する工程と、
素子固着電極部を形成する領域の前記絶縁基板にルーター加工により貫通するスルーホール孔よりも大きく、かつ、前記素子固着電極部の上に載置される発熱素子よりも大きく形成される素子固着電極用貫通孔を形成する工程と、
前記絶縁基板の反対主面に第2の導電箔を貼着し、前記素子固着電極用貫通孔の底面に前記第2の導電箔の裏面側を露出させる工程と、
前記第1および前記第2の導電箔の表面をフィルムで被覆する工程と、
電解メッキにより前記素子固着電極用貫通孔に底部側に露出する前記第2の導電箔の裏面から前記第1の導電箔表面にキノコ状に飛び出るまで銅メッキ層を形成し、前記銅メッキ層で前記素子固着電極用貫通孔を充填する工程と、
前記銅メッキ層の表面を平坦に研削し、平坦化する工程と、
前記第1の導電箔、前記第2の導電箔、および前記絶縁基板を貫通する前記スルーホール孔を形成する工程と、
スルーホールメッキにより前記第1の導電箔および前記第2の導電箔を接続するスルーホールメッキ層を形成する工程と、
前記第1および第2の導電箔を所望のパターンにエッチングして第1電極部と第2電極部を形成する工程とを具備することを特徴とする実装基板の製造方法。 - 前記銅メッキ層で前記素子固着電極用貫通孔を充填する工程において、前記銅メッキ層は前記第1の導電箔に貼着した前記フィルム表面より突出させることを特徴とする請求項7に記載の実装基板の製造方法。
- 前記銅メッキ層の表面を平坦に研削し、平坦化する工程において、前記銅メッキ層を研削後にフラッシュエッチングすることを特徴とする請求項7に記載の実装基板の製造方法。
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US10211139B2 (en) | 2012-05-24 | 2019-02-19 | Unimicron Technology Corp. | Chip package structure |
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CN105374911B (zh) * | 2014-08-29 | 2019-01-01 | 佛山市国星光电股份有限公司 | 一种新型薄膜衬底led器件及其制造方法 |
JP2016213283A (ja) * | 2015-05-01 | 2016-12-15 | ソニー株式会社 | 製造方法、および貫通電極付配線基板 |
DE102016106387A1 (de) * | 2016-04-07 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Lichtemittierendes bauelement |
JP6667184B2 (ja) * | 2016-04-19 | 2020-03-18 | 日本特殊陶業株式会社 | 配線基板の製造方法 |
TWI585932B (zh) * | 2016-05-11 | 2017-06-01 | 欣興電子股份有限公司 | 晶片封裝結構 |
JP6838528B2 (ja) * | 2017-08-31 | 2021-03-03 | 日亜化学工業株式会社 | 基板の製造方法と発光装置の製造方法 |
JP7270525B2 (ja) * | 2019-10-31 | 2023-05-10 | デンカ株式会社 | 複合基板及びその製造方法、並びに、回路基板の製造方法 |
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