JP4039385B2 - ケミカル酸化膜の除去方法 - Google Patents

ケミカル酸化膜の除去方法 Download PDF

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Publication number
JP4039385B2
JP4039385B2 JP2004124095A JP2004124095A JP4039385B2 JP 4039385 B2 JP4039385 B2 JP 4039385B2 JP 2004124095 A JP2004124095 A JP 2004124095A JP 2004124095 A JP2004124095 A JP 2004124095A JP 4039385 B2 JP4039385 B2 JP 4039385B2
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oxide film
gas
processing
chemical
chemical oxide
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Expired - Fee Related
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JP2004124095A
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Japanese (ja)
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JP2004343094A5 (enrdf_load_stackoverflow
JP2004343094A (ja
Inventor
一秀 長谷部
充弘 岡田
貴司 千葉
淳 小川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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JP2004124095A 2003-04-22 2004-04-20 ケミカル酸化膜の除去方法 Expired - Fee Related JP4039385B2 (ja)

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JP2004124095A JP4039385B2 (ja) 2003-04-22 2004-04-20 ケミカル酸化膜の除去方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003117664 2003-04-22
JP2004124095A JP4039385B2 (ja) 2003-04-22 2004-04-20 ケミカル酸化膜の除去方法

Publications (3)

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JP2004343094A JP2004343094A (ja) 2004-12-02
JP2004343094A5 JP2004343094A5 (enrdf_load_stackoverflow) 2005-08-11
JP4039385B2 true JP4039385B2 (ja) 2008-01-30

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JP2004124095A Expired - Fee Related JP4039385B2 (ja) 2003-04-22 2004-04-20 ケミカル酸化膜の除去方法

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4895256B2 (ja) * 2005-02-23 2012-03-14 東京エレクトロン株式会社 基板の表面処理方法
JP5046506B2 (ja) * 2005-10-19 2012-10-10 東京エレクトロン株式会社 基板処理装置，基板処理方法，プログラム，プログラムを記録した記録媒体
WO2007049510A1 (ja) * 2005-10-27 2007-05-03 Tokyo Electron Limited 処理方法及び記録媒体
JP4976002B2 (ja) * 2005-11-08 2012-07-18 東京エレクトロン株式会社 基板処理装置，基板処理方法及び記録媒体
JP4946017B2 (ja) * 2005-11-25 2012-06-06 ソニー株式会社 半導体装置の製造方法
JP4890025B2 (ja) * 2005-12-28 2012-03-07 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP5119604B2 (ja) * 2006-03-16 2013-01-16 ソニー株式会社 半導体装置の製造方法
JP2007311376A (ja) * 2006-05-16 2007-11-29 Sony Corp 半導体装置の製造方法
JP5158068B2 (ja) * 2009-02-20 2013-03-06 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
JP5661523B2 (ja) 2011-03-18 2015-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置
US9023734B2 (en) * 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
JP6726610B2 (ja) * 2016-12-13 2020-07-22 東京エレクトロン株式会社 エッチング方法及び基板処理システム
JP7565885B2 (ja) * 2021-07-27 2024-10-11 三菱電機株式会社 半導体装置の製造方法および半導体製造装置
JP7407162B2 (ja) * 2021-11-17 2023-12-28 株式会社アルバック エッチング方法、および、エッチング装置
JP2023179001A (ja) 2022-06-07 2023-12-19 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2024062579A (ja) 2022-10-25 2024-05-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2025014392A (ja) 2023-07-18 2025-01-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2025068463A (ja) * 2023-10-16 2025-04-28 東京エレクトロン株式会社 エッチング方法及びエッチング装置

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