JP2021057439A - 成膜方法、及び成膜装置 - Google Patents
成膜方法、及び成膜装置 Download PDFInfo
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- JP2021057439A JP2021057439A JP2019178592A JP2019178592A JP2021057439A JP 2021057439 A JP2021057439 A JP 2021057439A JP 2019178592 A JP2019178592 A JP 2019178592A JP 2019178592 A JP2019178592 A JP 2019178592A JP 2021057439 A JP2021057439 A JP 2021057439A
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- film
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- oxide film
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- 230000008021 deposition Effects 0.000 title description 4
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- 239000004065 semiconductor Substances 0.000 claims abstract description 91
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
窒化膜の露出する領域と酸化膜の露出する領域とが隣り合う基板に対してフッ素含有ガスを供給し、前記基板にフッ素を吸着させつつ、前記窒化膜と前記酸化膜のうちの前記窒化膜を選択的にエッチングし、前記窒化膜の表面を前記酸化膜の表面よりも凹ませ、前記酸化膜の側面で段差面を形成する工程と、
前記基板にフッ素を吸着させつつ前記段差面を形成する工程の後、半導体材料を含む原料ガスを前記基板に対して供給し、前記窒化膜と前記酸化膜のうちの前記窒化膜に選択的に半導体膜を形成する工程と、
を含む。
基板温度:60℃
HFガスの流量:300sccm(standard cc/min)
NH3ガスの流量:300sccm
N2ガスの流量:1500sccm
処理容器の内部の気圧:27Pa
処理時間:1.6min
なお、N2ガスは、希釈ガスである。N2ガスの代わりに、Arガス等の希ガスが希釈ガスとして用いられてもよい。
基板温度:250℃〜300℃
F2ガスの流量:100sccm〜10000sccm
処理容器の内部の気圧:13Pa〜20000Pa
処理時間:0.1min〜30min。
基板温度:60℃
HFガスの流量:100sccm
NH3ガスの流量:300sccm
N2ガスの流量:3000sccm
処理容器の内部の気圧:26Pa
処理時間:1min〜30min。
基板温度:350℃〜450℃
Si2H6ガスの流量:100sccm〜10000sccm
処理容器の内部の気圧:27Pa〜1333Pa
処理時間:5min〜300min。
基板温度:350℃〜450℃
Cl2ガスの流量:100sccm〜5000sccm
処理容器の内部の気圧:27Pa〜667Pa
処理時間:0.5min〜30min。
11 窒化膜
12 自然酸化膜
13 酸化膜
20 フッ素
30 半導体膜
40 半導体材料
A1 第1領域
A2 第2領域
100 成膜装置
110 処理容器
120 基板保持部
130 加熱部
140 ガス供給部
150 ガス排出部
160 制御部
Claims (11)
- 窒化膜の露出する領域と酸化膜の露出する領域とが隣り合う基板に対してフッ素含有ガスを供給し、前記基板にフッ素を吸着させつつ、前記窒化膜と前記酸化膜のうちの前記窒化膜を選択的にエッチングし、前記窒化膜の表面を前記酸化膜の表面よりも凹ませ、前記酸化膜の側面で段差面を形成する工程と、
前記基板にフッ素を吸着させつつ前記段差面を形成する工程の後、半導体材料を含む原料ガスを前記基板に対して供給し、前記窒化膜と前記酸化膜のうちの前記窒化膜に選択的に半導体膜を形成する工程と、
を含む、成膜方法。 - 前記基板にフッ素を吸着させつつ前記段差面を形成する工程は、前記窒化膜に選択的に前記半導体膜を形成する工程よりも、低い温度で実施される、請求項1に記載の成膜方法。
- 前記フッ素含有ガスは、F2ガス、又はNH3ガスと共に用いられるHFガスである、請求項1又は2に記載の成膜方法。
- 前記原料ガスは、Si及びGeのうちの少なくとも1つを含む、請求項1〜3のいずれか1項に記載の成膜方法。
- 前記窒化膜は窒化シリコン膜であり、前記酸化膜は酸化シリコン膜である、請求項1〜4のいずれか1項に記載の成膜方法。
- 前記基板にフッ素を吸着させつつ前記段差面を形成する工程の前に、前記窒化膜の自然酸化膜を除去し、前記窒化膜を露出する工程を更に含む、請求項1〜5のいずれか1項に記載の成膜方法。
- 前記自然酸化膜の除去に、NH3ガスとHFガスを用いる、請求項6に記載の成膜方法。
- 前記窒化膜に選択的に前記半導体膜を形成する工程の後に、ハロゲン含有ガスを前記基板に対して供給し、前記酸化膜に堆積した前記半導体材料を除去する工程を更に含む、請求項1〜7のいずれか1項に記載の成膜方法。
- 前記ハロゲン含有ガスは、フッ素を含まない、請求項8に記載の成膜方法。
- 前記窒化膜に選択的に前記半導体膜を形成する工程と、前記酸化膜に堆積した前記半導体材料を除去する工程とを繰り返し含む、請求項8又は9に記載の成膜方法。
- 前記基板を収容する処理容器と、
前記処理容器の内部で前記基板を保持する基板保持部と、
前記基板保持部で保持された前記基板を加熱する加熱部と、
前記処理容器の内部にガスを供給するガス供給部と、
前記処理容器の内部からガスを排出するガス排出部と、
請求項1〜10のいずれか1項に記載の成膜方法を実施するように、前記加熱部、前記ガス供給部、及び前記ガス排出部を制御する制御部と、
を備える、成膜装置。
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