JP4029180B2 - 投影露光装置及び投影露光方法 - Google Patents

投影露光装置及び投影露光方法 Download PDF

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Publication number
JP4029180B2
JP4029180B2 JP33284496A JP33284496A JP4029180B2 JP 4029180 B2 JP4029180 B2 JP 4029180B2 JP 33284496 A JP33284496 A JP 33284496A JP 33284496 A JP33284496 A JP 33284496A JP 4029180 B2 JP4029180 B2 JP 4029180B2
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JP
Japan
Prior art keywords
stage
substrate
wafer
alignment
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33284496A
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English (en)
Japanese (ja)
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JPH10163097A (ja
JPH10163097A5 (enExample
Inventor
健爾 西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP33284496A priority Critical patent/JP4029180B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to HK00103393.7A priority patent/HK1024104B/xx
Priority to KR1020017006773A priority patent/KR20030096435A/ko
Priority to CNB011216433A priority patent/CN1244021C/zh
Priority to PCT/JP1997/004350 priority patent/WO1998024115A1/ja
Priority to SG200005339A priority patent/SG93267A1/en
Priority to AT97913467T priority patent/ATE404906T1/de
Priority to DE69738910T priority patent/DE69738910D1/de
Priority to EP08005700A priority patent/EP1944654A3/en
Priority to CNB011176652A priority patent/CN1244018C/zh
Priority to SG200103143A priority patent/SG102627A1/en
Priority to EP97913467A priority patent/EP0951054B1/en
Priority to CNB011176660A priority patent/CN1244019C/zh
Priority to SG200103142A priority patent/SG88824A1/en
Priority to AU50678/98A priority patent/AU5067898A/en
Priority to IL13013797A priority patent/IL130137A/xx
Priority to SG200103141A priority patent/SG88823A1/en
Priority to CNB971811172A priority patent/CN1144263C/zh
Priority to CNB011216425A priority patent/CN1244020C/zh
Publication of JPH10163097A publication Critical patent/JPH10163097A/ja
Priority to KR1019997004747A priority patent/KR100315249B1/ko
Priority to KR1019997004939A priority patent/KR100314557B1/ko
Priority to US09/666,407 priority patent/US6400441B1/en
Priority to US09/714,620 priority patent/US6549269B1/en
Priority to US09/714,943 priority patent/US6341007B1/en
Priority to US09/716,405 priority patent/US6590634B1/en
Priority to KR1020017006772A priority patent/KR100315251B1/ko
Priority to KR1020017006771A priority patent/KR100315250B1/ko
Priority to US10/024,147 priority patent/US6798491B2/en
Priority to KR1020020072333A priority patent/KR20060086495A/ko
Priority to KR1020020072335A priority patent/KR20060086496A/ko
Priority to US10/879,144 priority patent/US7177008B2/en
Publication of JPH10163097A5 publication Critical patent/JPH10163097A5/ja
Priority to US11/647,492 priority patent/US7256869B2/en
Application granted granted Critical
Publication of JP4029180B2 publication Critical patent/JP4029180B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP33284496A 1996-11-28 1996-11-28 投影露光装置及び投影露光方法 Expired - Lifetime JP4029180B2 (ja)

Priority Applications (32)

Application Number Priority Date Filing Date Title
JP33284496A JP4029180B2 (ja) 1996-11-28 1996-11-28 投影露光装置及び投影露光方法
AT97913467T ATE404906T1 (de) 1996-11-28 1997-11-28 Ausrichtvorrichtung und belichtungsverfahren
CNB011216433A CN1244021C (zh) 1996-11-28 1997-11-28 光刻装置和曝光方法
PCT/JP1997/004350 WO1998024115A1 (en) 1996-11-28 1997-11-28 Aligner and method for exposure
SG200005339A SG93267A1 (en) 1996-11-28 1997-11-28 An exposure apparatus and an exposure method
CNB971811172A CN1144263C (zh) 1996-11-28 1997-11-28 曝光装置以及曝光方法
DE69738910T DE69738910D1 (de) 1996-11-28 1997-11-28 Ausrichtvorrichtung und belichtungsverfahren
EP08005700A EP1944654A3 (en) 1996-11-28 1997-11-28 An exposure apparatus and an exposure method
CNB011176652A CN1244018C (zh) 1996-11-28 1997-11-28 曝光方法和曝光装置
SG200103143A SG102627A1 (en) 1996-11-28 1997-11-28 Lithographic device
EP97913467A EP0951054B1 (en) 1996-11-28 1997-11-28 Aligner and method for exposure
CNB011176660A CN1244019C (zh) 1996-11-28 1997-11-28 曝光装置以及曝光方法
SG200103142A SG88824A1 (en) 1996-11-28 1997-11-28 Projection exposure method
KR1020017006773A KR20030096435A (ko) 1996-11-28 1997-11-28 노광장치 및 노광방법
IL13013797A IL130137A (en) 1996-11-28 1997-11-28 Exposure apparatus and an exposure method
SG200103141A SG88823A1 (en) 1996-11-28 1997-11-28 Projection exposure apparatus
HK00103393.7A HK1024104B (en) 1996-11-28 1997-11-28 Aligner and method for exposure
CNB011216425A CN1244020C (zh) 1996-11-28 1997-11-28 曝光装置
AU50678/98A AU5067898A (en) 1996-11-28 1997-11-28 Aligner and method for exposure
KR1019997004747A KR100315249B1 (ko) 1996-11-28 1999-05-28 노광장치 및 노광방법
KR1019997004939A KR100314557B1 (ko) 1996-11-28 1999-06-03 노광장치 및 노광방법
US09/666,407 US6400441B1 (en) 1996-11-28 2000-09-20 Projection exposure apparatus and method
US09/714,620 US6549269B1 (en) 1996-11-28 2000-11-17 Exposure apparatus and an exposure method
US09/714,943 US6341007B1 (en) 1996-11-28 2000-11-20 Exposure apparatus and method
US09/716,405 US6590634B1 (en) 1996-11-28 2000-11-21 Exposure apparatus and method
KR1020017006772A KR100315251B1 (ko) 1996-11-28 2001-05-30 노광장치 및 노광방법
KR1020017006771A KR100315250B1 (ko) 1996-11-28 2001-05-30 노광장치 및 노광방법
US10/024,147 US6798491B2 (en) 1996-11-28 2001-12-21 Exposure apparatus and an exposure method
KR1020020072333A KR20060086495A (ko) 1996-11-28 2002-11-20 노광장치 및 노광방법
KR1020020072335A KR20060086496A (ko) 1996-11-28 2002-11-20 노광장치 및 노광방법
US10/879,144 US7177008B2 (en) 1996-11-28 2004-06-30 Exposure apparatus and method
US11/647,492 US7256869B2 (en) 1996-11-28 2006-12-29 Exposure apparatus and an exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33284496A JP4029180B2 (ja) 1996-11-28 1996-11-28 投影露光装置及び投影露光方法

Publications (3)

Publication Number Publication Date
JPH10163097A JPH10163097A (ja) 1998-06-19
JPH10163097A5 JPH10163097A5 (enExample) 2005-08-11
JP4029180B2 true JP4029180B2 (ja) 2008-01-09

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JP33284496A Expired - Lifetime JP4029180B2 (ja) 1996-11-28 1996-11-28 投影露光装置及び投影露光方法

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JP (1) JP4029180B2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6549277B1 (en) 1999-09-28 2003-04-15 Nikon Corporation Illuminance meter, illuminance measuring method and exposure apparatus
WO2001023935A1 (en) 1999-09-29 2001-04-05 Nikon Corporation Projection exposure method and apparatus and projection optical system
WO2001023933A1 (en) 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
JP2002270494A (ja) * 2001-03-13 2002-09-20 Sony Corp 位置検出方法および露光方法
JP2002287023A (ja) 2001-03-27 2002-10-03 Nikon Corp 投影光学系、該投影光学系を備えた投影露光装置及び投影露光方法
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20070247640A1 (en) * 2004-03-30 2007-10-25 Nikon Corporation Exposure Apparatus, Exposure Method and Device Manufacturing Method, and Surface Shape Detection Unit
WO2007055237A1 (ja) * 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007318069A (ja) * 2005-12-06 2007-12-06 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法、投影光学系
EP1975982A1 (en) 2005-12-28 2008-10-01 Nikon Corporation Pattern formation method and pattern formation apparatus, exposure metho and exposure apparatus, and device manufacturing method
JP5115859B2 (ja) * 2006-02-21 2013-01-09 株式会社ニコン パターン形成装置、露光装置及び露光方法、並びにデバイス製造方法
EP2071611B1 (en) * 2006-08-31 2019-05-01 Nikon Corporation Mobile body drive system and mobile body drive method, pattern formation apparatus and method, exposure apparatus and method, device manufacturing method, and decision method
JP2007306034A (ja) * 2007-08-14 2007-11-22 Hitachi High-Technologies Corp 露光装置及び基板製造方法
JP2007293376A (ja) * 2007-08-14 2007-11-08 Hitachi High-Technologies Corp 露光装置及び基板製造方法
US20090153824A1 (en) * 2007-12-17 2009-06-18 Kla-Tencor Corporation Multiple chuck scanning stage
TWI547769B (zh) * 2007-12-28 2016-09-01 尼康股份有限公司 An exposure apparatus, a moving body driving system, a pattern forming apparatus, and an exposure method, and an element manufacturing method
JP2008146098A (ja) * 2008-02-06 2008-06-26 Hitachi High-Technologies Corp プロキシミティ露光装置及び基板製造方法
JP4312248B2 (ja) * 2008-02-06 2009-08-12 株式会社日立ハイテクノロジーズ プロキシミティ露光装置及び基板製造方法
JP4312247B2 (ja) * 2008-02-06 2009-08-12 株式会社日立ハイテクノロジーズ プロキシミティ露光装置及び基板製造方法
JP2008122996A (ja) * 2008-02-06 2008-05-29 Hitachi High-Technologies Corp プロキシミティ露光装置及び基板製造方法
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
CN102754035B (zh) 2010-02-19 2014-12-10 Asml荷兰有限公司 光刻设备和器件制造方法
JP2011222726A (ja) 2010-04-08 2011-11-04 Elpida Memory Inc 半導体装置の製造方法、ウェハ処理システム及びプログラム
KR101104267B1 (ko) * 2010-08-06 2012-01-11 오에프티 주식회사 스테이지 모듈 반송형 노광 장치 및 스테이지 모듈의 기판 정렬 및 이송 제어 방법
EP2823361B1 (en) * 2012-03-08 2022-03-02 ASML Netherlands B.V. Lithography system and method for processing a target, such as a wafer
CN107221509B (zh) * 2017-06-20 2020-10-13 南京矽邦半导体有限公司 一种识别单颗产品在qfn框架上位置信息的方法
CN115857283A (zh) * 2022-12-19 2023-03-28 合肥芯碁微电子装备股份有限公司 激光直写光刻机和自动聚焦控制方法

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Publication number Publication date
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