JP4025002B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
- Publication number
- JP4025002B2 JP4025002B2 JP2000277108A JP2000277108A JP4025002B2 JP 4025002 B2 JP4025002 B2 JP 4025002B2 JP 2000277108 A JP2000277108 A JP 2000277108A JP 2000277108 A JP2000277108 A JP 2000277108A JP 4025002 B2 JP4025002 B2 JP 4025002B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- signal
- mask
- supplied
- burst length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
Landscapes
- Dram (AREA)
- Memory System (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000277108A JP4025002B2 (ja) | 2000-09-12 | 2000-09-12 | 半導体記憶装置 |
| US09/951,230 US6483772B2 (en) | 2000-09-12 | 2001-09-12 | Semiconductor memory device capable of masking data to be written |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000277108A JP4025002B2 (ja) | 2000-09-12 | 2000-09-12 | 半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002093168A JP2002093168A (ja) | 2002-03-29 |
| JP2002093168A5 JP2002093168A5 (enExample) | 2005-06-02 |
| JP4025002B2 true JP4025002B2 (ja) | 2007-12-19 |
Family
ID=18762487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000277108A Expired - Fee Related JP4025002B2 (ja) | 2000-09-12 | 2000-09-12 | 半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6483772B2 (enExample) |
| JP (1) | JP4025002B2 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6671212B2 (en) | 2002-02-08 | 2003-12-30 | Ati Technologies Inc. | Method and apparatus for data inversion in memory device |
| US7149824B2 (en) | 2002-07-10 | 2006-12-12 | Micron Technology, Inc. | Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction |
| US6957308B1 (en) | 2002-07-11 | 2005-10-18 | Advanced Micro Devices, Inc. | DRAM supporting different burst-length accesses without changing the burst length setting in the mode register |
| JP2004213337A (ja) * | 2002-12-27 | 2004-07-29 | Nec Computertechno Ltd | 半導体記憶装置及び実装型半導体装置 |
| JP4505195B2 (ja) * | 2003-04-01 | 2010-07-21 | エイティアイ テクノロジーズ インコーポレイテッド | メモリデバイスにおいてデータを反転させるための方法および装置 |
| WO2007099447A2 (en) * | 2006-03-02 | 2007-09-07 | Nokia Corporation | Method and system for flexible burst length control |
| US20080059748A1 (en) * | 2006-08-31 | 2008-03-06 | Nokia Corporation | Method, mobile device, system and software for a write method with burst stop and data masks |
| JP2008198280A (ja) * | 2007-02-13 | 2008-08-28 | Elpida Memory Inc | 半導体記憶装置及びその動作方法 |
| KR20100101449A (ko) * | 2009-03-09 | 2010-09-17 | 삼성전자주식회사 | 메모리 장치, 그것의 마스크 데이터 전송 방법 및 입력 데이터 정렬 방법 |
| JP5726425B2 (ja) * | 2010-03-04 | 2015-06-03 | エイティアイ テクノロジーズ インコーポレイテッド | メモリデバイスにおいてデータを反転させるための方法および装置 |
| KR101133686B1 (ko) * | 2010-05-28 | 2012-04-12 | 에스케이하이닉스 주식회사 | 반도체 장치와 그의 동작 방법 |
| US10846253B2 (en) | 2017-12-21 | 2020-11-24 | Advanced Micro Devices, Inc. | Dynamic page state aware scheduling of read/write burst transactions |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3756231B2 (ja) | 1995-12-19 | 2006-03-15 | 株式会社ルネサステクノロジ | 同期型半導体記憶装置 |
| KR100364127B1 (ko) * | 1997-12-29 | 2003-04-11 | 주식회사 하이닉스반도체 | 칩-세트 |
| US6219747B1 (en) * | 1999-01-06 | 2001-04-17 | Dvdo Inc | Methods and apparatus for variable length SDRAM transfers |
-
2000
- 2000-09-12 JP JP2000277108A patent/JP4025002B2/ja not_active Expired - Fee Related
-
2001
- 2001-09-12 US US09/951,230 patent/US6483772B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20020031020A1 (en) | 2002-03-14 |
| US6483772B2 (en) | 2002-11-19 |
| JP2002093168A (ja) | 2002-03-29 |
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