JP4025002B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4025002B2
JP4025002B2 JP2000277108A JP2000277108A JP4025002B2 JP 4025002 B2 JP4025002 B2 JP 4025002B2 JP 2000277108 A JP2000277108 A JP 2000277108A JP 2000277108 A JP2000277108 A JP 2000277108A JP 4025002 B2 JP4025002 B2 JP 4025002B2
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JP
Japan
Prior art keywords
circuit
signal
mask
supplied
burst length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000277108A
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English (en)
Japanese (ja)
Other versions
JP2002093168A5 (enExample
JP2002093168A (ja
Inventor
進 小澤
克巳 阿部
成夫 大島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000277108A priority Critical patent/JP4025002B2/ja
Priority to US09/951,230 priority patent/US6483772B2/en
Publication of JP2002093168A publication Critical patent/JP2002093168A/ja
Publication of JP2002093168A5 publication Critical patent/JP2002093168A5/ja
Application granted granted Critical
Publication of JP4025002B2 publication Critical patent/JP4025002B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1087Data input latches
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

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  • Dram (AREA)
  • Memory System (AREA)
JP2000277108A 2000-09-12 2000-09-12 半導体記憶装置 Expired - Fee Related JP4025002B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000277108A JP4025002B2 (ja) 2000-09-12 2000-09-12 半導体記憶装置
US09/951,230 US6483772B2 (en) 2000-09-12 2001-09-12 Semiconductor memory device capable of masking data to be written

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000277108A JP4025002B2 (ja) 2000-09-12 2000-09-12 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2002093168A JP2002093168A (ja) 2002-03-29
JP2002093168A5 JP2002093168A5 (enExample) 2005-06-02
JP4025002B2 true JP4025002B2 (ja) 2007-12-19

Family

ID=18762487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000277108A Expired - Fee Related JP4025002B2 (ja) 2000-09-12 2000-09-12 半導体記憶装置

Country Status (2)

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US (1) US6483772B2 (enExample)
JP (1) JP4025002B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6671212B2 (en) 2002-02-08 2003-12-30 Ati Technologies Inc. Method and apparatus for data inversion in memory device
US7149824B2 (en) 2002-07-10 2006-12-12 Micron Technology, Inc. Dynamically setting burst length of memory device by applying signal to at least one external pin during a read or write transaction
US6957308B1 (en) 2002-07-11 2005-10-18 Advanced Micro Devices, Inc. DRAM supporting different burst-length accesses without changing the burst length setting in the mode register
JP2004213337A (ja) * 2002-12-27 2004-07-29 Nec Computertechno Ltd 半導体記憶装置及び実装型半導体装置
JP4505195B2 (ja) * 2003-04-01 2010-07-21 エイティアイ テクノロジーズ インコーポレイテッド メモリデバイスにおいてデータを反転させるための方法および装置
WO2007099447A2 (en) * 2006-03-02 2007-09-07 Nokia Corporation Method and system for flexible burst length control
US20080059748A1 (en) * 2006-08-31 2008-03-06 Nokia Corporation Method, mobile device, system and software for a write method with burst stop and data masks
JP2008198280A (ja) * 2007-02-13 2008-08-28 Elpida Memory Inc 半導体記憶装置及びその動作方法
KR20100101449A (ko) * 2009-03-09 2010-09-17 삼성전자주식회사 메모리 장치, 그것의 마스크 데이터 전송 방법 및 입력 데이터 정렬 방법
JP5726425B2 (ja) * 2010-03-04 2015-06-03 エイティアイ テクノロジーズ インコーポレイテッド メモリデバイスにおいてデータを反転させるための方法および装置
KR101133686B1 (ko) * 2010-05-28 2012-04-12 에스케이하이닉스 주식회사 반도체 장치와 그의 동작 방법
US10846253B2 (en) 2017-12-21 2020-11-24 Advanced Micro Devices, Inc. Dynamic page state aware scheduling of read/write burst transactions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3756231B2 (ja) 1995-12-19 2006-03-15 株式会社ルネサステクノロジ 同期型半導体記憶装置
KR100364127B1 (ko) * 1997-12-29 2003-04-11 주식회사 하이닉스반도체 칩-세트
US6219747B1 (en) * 1999-01-06 2001-04-17 Dvdo Inc Methods and apparatus for variable length SDRAM transfers

Also Published As

Publication number Publication date
US20020031020A1 (en) 2002-03-14
US6483772B2 (en) 2002-11-19
JP2002093168A (ja) 2002-03-29

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