JP4006226B2 - 光学素子の製造方法、光学素子、露光装置及びデバイス製造方法及びデバイス - Google Patents

光学素子の製造方法、光学素子、露光装置及びデバイス製造方法及びデバイス Download PDF

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Publication number
JP4006226B2
JP4006226B2 JP2001359618A JP2001359618A JP4006226B2 JP 4006226 B2 JP4006226 B2 JP 4006226B2 JP 2001359618 A JP2001359618 A JP 2001359618A JP 2001359618 A JP2001359618 A JP 2001359618A JP 4006226 B2 JP4006226 B2 JP 4006226B2
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JP
Japan
Prior art keywords
optical element
thin film
substrate
light
optical
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2001359618A
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English (en)
Japanese (ja)
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JP2003161803A (ja
JP2003161803A5 (enExample
Inventor
竜二 枇榔
実 大谷
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001359618A priority Critical patent/JP4006226B2/ja
Priority to EP02258027A priority patent/EP1316849A3/en
Priority to US10/303,295 priority patent/US20030108665A1/en
Publication of JP2003161803A publication Critical patent/JP2003161803A/ja
Publication of JP2003161803A5 publication Critical patent/JP2003161803A5/ja
Priority to US11/212,574 priority patent/US7455880B2/en
Application granted granted Critical
Publication of JP4006226B2 publication Critical patent/JP4006226B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001359618A 2001-11-26 2001-11-26 光学素子の製造方法、光学素子、露光装置及びデバイス製造方法及びデバイス Expired - Fee Related JP4006226B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001359618A JP4006226B2 (ja) 2001-11-26 2001-11-26 光学素子の製造方法、光学素子、露光装置及びデバイス製造方法及びデバイス
EP02258027A EP1316849A3 (en) 2001-11-26 2002-11-21 Method of removing color centers from film coated fluoride optical elements
US10/303,295 US20030108665A1 (en) 2001-11-26 2002-11-25 Optical element fabrication method, optical element, exposure apparatus, device fabrication method
US11/212,574 US7455880B2 (en) 2001-11-26 2005-08-29 Optical element fabrication method, optical element, exposure apparatus, device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001359618A JP4006226B2 (ja) 2001-11-26 2001-11-26 光学素子の製造方法、光学素子、露光装置及びデバイス製造方法及びデバイス

Publications (3)

Publication Number Publication Date
JP2003161803A JP2003161803A (ja) 2003-06-06
JP2003161803A5 JP2003161803A5 (enExample) 2005-07-07
JP4006226B2 true JP4006226B2 (ja) 2007-11-14

Family

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Family Applications (1)

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JP2001359618A Expired - Fee Related JP4006226B2 (ja) 2001-11-26 2001-11-26 光学素子の製造方法、光学素子、露光装置及びデバイス製造方法及びデバイス

Country Status (3)

Country Link
US (2) US20030108665A1 (enExample)
EP (1) EP1316849A3 (enExample)
JP (1) JP4006226B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050018296A1 (en) * 2003-07-24 2005-01-27 Asml Holding Nv Diffractive optical element and method of making same
US7697111B2 (en) 2003-08-26 2010-04-13 Nikon Corporation Optical element and exposure apparatus
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
CN100467117C (zh) * 2005-09-05 2009-03-11 鸿富锦精密工业（深圳）有限公司 纳米粉体制备装置及制备方法
JP5459896B2 (ja) * 2007-03-05 2014-04-02 株式会社半導体エネルギー研究所 配線及び記憶素子の作製方法
US8399069B2 (en) * 2009-07-30 2013-03-19 Canon Kabushiki Kaisha Method of producing magnesium fluoride coating, antireflection coating, and optical element
DE102009037077B3 (de) 2009-08-13 2011-02-17 Carl Zeiss Smt Ag Katadioptrisches Projektionsobjektiv
TWI512374B (zh) * 2013-11-05 2015-12-11 Au Optronics Corp 光配向設備與光配向方法
DE102021203505A1 (de) * 2021-04-09 2022-10-13 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Abscheiden mindestens einer Schicht, optisches Element und optische Anordnung

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608272A (en) * 1980-10-20 1986-08-26 Northrop Corporation Method of reducing optical coating absorptance
JPS60204640A (ja) * 1984-03-28 1985-10-16 Nuclear Fuel Ind Ltd 放射線照射による着色ガラス製品の脱色再生方法
US4641033A (en) * 1984-12-19 1987-02-03 Fusion Systems Corporation Apparatus and method preventing radiation induced degradation of optical elements
JPH02166447A (ja) * 1988-12-20 1990-06-27 Fujitsu Ltd 露光用マスクおよびその製造方法
US5472748A (en) * 1990-10-15 1995-12-05 The United States Of America As Represented By The United States Department Of Energy Permanent laser conditioning of thin film optical materials
US5796458A (en) 1992-09-01 1998-08-18 Fujitsu Limited Element division liquid crystal display device and its manufacturing method
US5512399A (en) 1993-09-21 1996-04-30 Fuji Electric Co., Ltd. Organic photo sensitive member for electrophotography
JPH07294705A (ja) 1994-04-25 1995-11-10 Canon Inc 紫外線照射後処理方法
JPH0817815A (ja) 1994-06-30 1996-01-19 Toshiba Corp 半導体デバイスの製造方法、半導体基板の処理方法、分析方法及び製造方法
US5581499A (en) * 1995-06-06 1996-12-03 Hamamdjian; Gilbert Micro information storage system
FR2742926B1 (fr) * 1995-12-22 1998-02-06 Alsthom Cge Alcatel Procede et dispositif de preparation de faces de laser
US6261696B1 (en) * 1996-03-22 2001-07-17 Canon Kabushika Kaisha Optical element with substrate containing fluorite as main ingredient, and method and apparatus for producing the optical element
JPH09324262A (ja) 1996-06-06 1997-12-16 Nikon Corp フッ化物薄膜の製造方法及びフッ化物薄膜
JP3345590B2 (ja) * 1998-07-16 2002-11-18 株式会社アドバンテスト 基板処理方法及び装置
JP2000150343A (ja) 1998-11-10 2000-05-30 Nikon Corp エキシマレーザ光学装置およびエキシマレーザ光学装置の透過率の回復方法
EP1088795A4 (en) * 1999-03-25 2004-03-31 Asahi Glass Co Ltd SYNTHETIC SILICA GLASS FOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING AND USING THE SAME
EP1134303B1 (en) * 2000-03-13 2010-06-09 Canon Kabushiki Kaisha Thin film production process
JP2001290001A (ja) 2000-04-04 2001-10-19 Canon Inc レーザー照射による光学薄膜の製造方法
US20020005990A1 (en) * 2000-07-11 2002-01-17 Nikon Corporation Optical element formed with optical thin film and exposure apparatus
JP3619157B2 (ja) * 2001-02-13 2005-02-09 キヤノン株式会社 光学素子、該光学素子を有する露光装置、洗浄装置及び光学素子の洗浄方法

Also Published As

Publication number Publication date
US20050287292A1 (en) 2005-12-29
EP1316849A3 (en) 2003-06-11
EP1316849A2 (en) 2003-06-04
US20030108665A1 (en) 2003-06-12
JP2003161803A (ja) 2003-06-06
US7455880B2 (en) 2008-11-25

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