559892 A7 B7 五、發明說明（/ ) [技術領域] I ^------------·— (請先閱讀背面之注意事項再填寫本頁) 本發明，係關於收容例如透鏡/反射鏡等至少一個光 學元件之鏡筒。又’本發明，係關於例如半導體元件、液 晶顯示元件、攝影元件、薄膜磁頭等各種元件之製造過程 中於微影製程所使用之曝光裝置。此外，本發明，係關於 用以製造前述各種元件之元件製造方法。 [習知技術] 此種曝光裝置中’設有以既定之曝光用光來照明形成 了既定圖案之標線片、光罩等的照明光學系統。又，亦設 有藉照明光學系統之照射，將前述圖案之像曝光至塗有光 阻劑等感光性材料之基板（晶圓、玻璃板等）上的投影光學 系統。此等照明光學系統及投影光學系統，係由複數之透 鏡元件、反射鏡等之光學元件構成，收容於鏡筒內。 ;線· 此種曝光裝置，爲了因應近年來對電路圖案之微細化 要求，曝光用光逐漸演變爲短波長化。最近，亦在開發以 遠紫外線帶之KrF準分子雷射光（λ = 248nm)、甚至真空紫 外線帶之ArF準分子雷射光（λ =157nm)爲曝光用光之曝光 裝置。 然而，使用此種真空紫外光來作爲曝光用光之場合， 卻浮現出下列問題。亦即，該曝光用光通過空間(鏡筒之內 部空間等）內所存在之氧氣、水蒸汽、碳氫氣體、或與曝光 用光反應而在透鏡元件等光學元件表面產生霧狀物質之有 機物資的氣體等，會成爲吸收曝光用光之物資的問題。除 此之外，在曝光裝置內存在驅動光學元件、載台等之驅動 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 559892 A7 ____B7_ 五、發明說明（i ) (請先閱讀背面之注意事項再填寫本頁) 機構的場合，自用以對該驅動機構進行供電、信號傳輸之 電線的包覆物質等揮發出極微量有機物質等，亦有可能成 爲吸光物質。再者，光學元件、用以收容該等光學元件之 鏡筒內壁所附著之附著物之揮發物等所謂之脫氣，亦有可 能成爲吸光物質。 作爲曝光用光，特別是在使用F2雷射光以下之短波長 光時，自光源射出之曝光用光，對ArF準分子雷射光之曝 光用光而言，因吸光物質造成之吸收大，在到達基板之前 其能量有顯著降低之情形。當曝光用光本身之能量降低、 或因光學元件之結霧造成曝光用光之穿透率降低的話，曝 光裝置之曝光效率即會降低，製品的良率降低。 因此，近年來，亦開發出一種使用惰性氣體，例如使 用氮氣、氦氣、氬氣等之淸洗氣體來淸洗曝光用光通過之 鏡筒內部空間等的曝光裝置。亦即，將淸洗氣體供應至內 部空間，以將包含吸光物質之氣體排出至該空間外。 [發明欲解決之課題] 然而，作爲曝光用光，採用真空紫外光、特別是在採 用F2雷射以下之短波長光時，前述侵入內部空間內之外氣 的影響即使非常微少，亦無法忽視。 尤其是近年來，爲實現更高的解像度，亦開發出能調 整構成投影光學系統之至少一部分光學元件之相對位置的 曝光裝置。此種曝光裝置，爲了容易的進行各光學元件間 之相對位置調整，一般係採用所謂之分割鏡筒，亦即，將 一個或複數個光學，收容於分別獨立之鏡筒單元，藉積層 ____5___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 559892 _ _ B7 _ 五、發明說明（$ ) (請先閱讀背面之注意事項再填寫本頁) 該等鏡筒單元來構成一個鏡筒。此種分割鏡筒，外氣更容 易從各鏡筒單元間之縫隙侵入鏡筒之內部空間。 爲了控制此種透過各鏡筒間縫隙之外氣侵入’可考慮 在該等鏡筒單元之端面之間，裝設例如由氟樹脂構成之墊 片的構成。不過，即使是氟樹脂亦無法完全使揮發物爲零 。此外，在組合鏡筒時，需調整對與曝光用光之光軸交叉 之各鏡筒單元之相對位置，於該調整時，若各鏡筒單元之 間安裝有墊片的話，將因墊片所具有之彈力’而有可能導 致各鏡筒單元間相對位置之變化。 本發明著眼於上述習知技術中存在之問題點，其目的 在於，能以良好之精度相對外氣隔離內部空間的鏡筒，及 能以良好之效率製造高積體度之元件的曝光裝置以及元件 之製造方法。 [用以解決課題之手段] 爲達成前述目的，本案請求項1之發明，係一種鏡筒 ，具備收容至少一個光學元件之複數個鏡筒單元，其特徵 在於：設有氣體排出機構，以排出相鄰鏡筒單元彼此對向 之端面間的氣體，將各鏡筒單元之內部空間與外氣隔離。 又’本案請求項13之發明，係一種鏡筒，具備收容至少一 個光學元件之複數個鏡筒單元，其特徵在於：設有吸附機 構’以吸附相鄰鏡筒單元彼此對向之端面，將各鏡筒單元 之內部空間與外氣隔離。此等發明，能有效抑制外氣侵入 鏡筒之內部空間。此外，由於並未在鏡筒單元間裝設墊片 等之中介物，因此不致因中介物之揮發物導致內部空間潔 _______6___ 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） 559892 B7 五、發明說明（> ) 淨度之降低，亦不致因該墊片之彈性力使各鏡筒單元產生 位置變化。 [圖式之簡單說明] 圖1，係顯示第1實施形態之曝光裝置的槪略構成圖。 圖2，係圖1之投影系統鏡筒的側視圖。 圖3，係圖1之投影系統鏡筒之主要部位的部分截面 圖。 圖4，係圖3之4-4線截面圖。 圖5，係顯示第2實施形態之曝光裝置之投影系統鏡 筒之主要部位的部分截面圖。 圖6，係圖5之6-6線截面圖。 圖7，係顯示第3實施形態之曝光裝置之投影系統鏡 筒的部分截面圖。 圖8，係顯示第4實施形態之曝光裝置之投影系統鏡 筒的部分截面圖。 圖9，係顯示元件之製造方法的流程圖。 圖10，係顯示半導體元件之製造方法的流程圖。 [元件符號說明] 21 曝光光源 25 作爲鏡筒之照明系統鏡筒 27 作爲鏡筒之投影系統鏡筒 33 照明光學系統 34 作爲光學元件之反射鏡 35 作爲光學元件之複眼透鏡 -- -- 7 _______- 本紙張尺度適用中國國家標準（cns)A4規格（210 X 297公釐） ---I----------- (請先閱讀背面之注意事項再填寫本頁) "δ · --線- 559892 A7 ____ B7___ 五、發明說明（夕） 36 作爲光學元件之聚光透鏡 37 標線片遮簾 38 作爲光學元件之平行平板玻璃 39 爲內部空間之照明密閉室 42 投影光學系統 43 玻璃蓋片 44 透鏡元件 45 投影密閉室 50 作爲氣體供應源之淸洗氣體供應系統 52 供氣管線 53 過濾器 54 調溫乾燥器 59, 59b，59c 鏡筒單元 59a鏡筒單元之端面 6〇 作爲調整構件之墊片 6〇a墊片之端面 61 螺栓 65 作爲排氣機構之一部分之凹部的環狀槽 65a作爲排氣機構或吸附機構之一部分之凹部的內側 環狀槽 65b作爲排氣機構或吸附機構之一部分之凹部的外側 環狀槽 67 作爲排氣通路之排氣管 68 作爲排氣機構或吸附機構之一部分的排氣裝置 ___8__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂---------線 _» 559892559892 A7 B7 V. Description of the Invention (/) [Technical Field] I ^ ------------ · — (Please read the notes on the back before filling this page) A lens barrel for at least one optical element such as a lens / reflector. The present invention relates to an exposure apparatus used in a lithography process in the manufacturing process of various elements such as semiconductor elements, liquid crystal display elements, photographic elements, and thin-film magnetic heads. The present invention also relates to a device manufacturing method for manufacturing the aforementioned various components. [Conventional Technology] In such an exposure device, an illumination optical system is provided that illuminates a reticle, a photomask, and the like formed with a predetermined pattern with predetermined exposure light. Furthermore, a projection optical system is also provided by exposing an image of the aforementioned pattern to a substrate (wafer, glass plate, etc.) coated with a photosensitive material such as a photoresist by irradiation of an illumination optical system. These illumination optical systems and projection optical systems are composed of a plurality of optical elements such as a lens element and a reflector, and are housed in a lens barrel. Line · This type of exposure device has gradually become shorter wavelengths in response to the demand for miniaturization of circuit patterns in recent years. Recently, exposure devices have been developed that use KrF excimer laser light (λ = 248 nm) in the far ultraviolet band, and even ArF excimer laser light (λ = 157 nm) in the vacuum ultraviolet band as exposure light. However, when such vacuum ultraviolet light is used as exposure light, the following problems arise. That is, the exposure light passes through the oxygen, water vapor, hydrocarbon gas existing in the space (internal space of the lens barrel, etc.), or organic that generates a mist-like substance on the surface of optical elements such as lens elements by reacting with the exposure light. Gases of materials, etc., are a problem for materials that absorb light for exposure. In addition, there are driving optical elements, stage and other drivers in the exposure device. The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 559892 A7 ____B7_ V. Description of the Invention (i) (Please Please read the precautions on the back before filling this page.) When the mechanism is used, the trace amount of organic substances such as the coating material of the wire used to supply power to the drive mechanism and signal transmission may also become light-absorbing substances. Furthermore, the so-called degassing of optical elements, volatiles attached to the inner wall of the lens barrel used to accommodate these optical elements, etc., may also become light-absorbing substances. As exposure light, especially when using short-wavelength light below F2 laser light, the exposure light emitted from the light source, for the exposure light of ArF excimer laser light, the absorption caused by the light-absorbing substance is large, and There was a significant decrease in the energy before the substrate. When the energy of the exposure light itself is reduced, or the transmittance of the exposure light is reduced due to the fogging of the optical element, the exposure efficiency of the exposure device is reduced, and the yield of the product is reduced. Therefore, in recent years, an exposure apparatus using an inert gas such as nitrogen, helium, argon, or the like to scrub the internal space of the lens barrel through which the exposure light passes has also been developed. That is, the scrubbing gas is supplied to the internal space to discharge the gas containing the light-absorbing substance to the outside of the space. [Problems to be Solved by the Invention] However, when the ultraviolet light is used as the exposure light, especially when the short-wavelength light below F2 laser is used, the influence of the above-mentioned invasion into the internal space can be ignored even if it is very small . Especially in recent years, in order to achieve a higher resolution, an exposure device capable of adjusting the relative position of at least a part of the optical elements constituting the projection optical system has also been developed. In order to easily adjust the relative position of each optical element, this exposure device generally uses a so-called split lens barrel, that is, one or a plurality of optics are stored in separate lens barrel units, and the layers are ____5___ This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) A7 559892 _ _ B7 _ V. Description of invention ($) (Please read the precautions on the back before filling this page) These lens barrel units To form a lens barrel. This split lens barrel makes it easier for outside air to penetrate the inner space of the lens barrel from the gap between the lens barrel units. In order to control such an intrusion of gas through the gap between the lens barrels, a configuration in which a spacer made of, for example, a fluororesin is installed between the end surfaces of the lens barrel units may be considered. However, even fluororesins cannot completely make volatiles zero. In addition, when the lens barrel is combined, the relative position of each lens barrel unit that intersects the optical axis of the light for exposure needs to be adjusted. During this adjustment, if gaskets are installed between the lens barrel units, The elastic force 'may cause the relative position of each lens barrel unit to change. The present invention focuses on the problems existing in the above-mentioned conventional technologies, and aims to provide a lens barrel capable of isolating the internal space from outside air with good accuracy, and an exposure device capable of manufacturing highly integrated components with good efficiency, and Element manufacturing method. [Means to solve the problem] In order to achieve the foregoing object, the invention of claim 1 of the present application is a lens barrel having a plurality of lens barrel units containing at least one optical element, and is characterized in that a gas exhaust mechanism is provided for exhausting The gas between the end surfaces of adjacent lens barrel units facing each other isolates the internal space of each lens barrel unit from the outside air. The invention of claim 13 of the present case is a lens barrel having a plurality of lens barrel units containing at least one optical element, characterized in that: a suction mechanism is provided to suck the end surfaces of adjacent lens barrel units facing each other, and The inner space of each lens barrel unit is isolated from the outside air. These inventions can effectively prevent outside air from entering the inner space of the lens barrel. In addition, because no intermediaries such as gaskets are installed between the lens barrel units, the internal space will not be cleaned due to the volatiles of the intermediaries. _______6___ This paper size applies the Chinese National Standard (CNS) A4 specification (21〇x 297) (Mm) 559892 B7 V. Description of the invention (>) The decrease in the clarity does not cause the position of each lens barrel unit to change due to the elastic force of the gasket. [Brief description of the drawings] FIG. 1 is a schematic configuration diagram showing an exposure apparatus according to the first embodiment. FIG. 2 is a side view of the lens barrel of the projection system of FIG. 1. FIG. FIG. 3 is a partial cross-sectional view of a main part of a lens barrel of the projection system of FIG. 1. FIG. FIG. 4 is a sectional view taken along line 4-4 in FIG. 3. Fig. 5 is a partial cross-sectional view showing a main part of a lens barrel of a projection system of an exposure apparatus according to a second embodiment. Fig. 6 is a sectional view taken along the line 6-6 in Fig. 5; Fig. 7 is a partial sectional view showing a lens barrel of a projection system of an exposure apparatus according to a third embodiment. Fig. 8 is a partial sectional view showing a lens barrel of a projection system of an exposure apparatus according to a fourth embodiment. FIG. 9 is a flowchart of a manufacturing method of a display element. FIG. 10 is a flowchart showing a method of manufacturing a semiconductor device. [Explanation of component symbols] 21 Exposure light source 25 Illumination system as a lens barrel 27 Projection system as a lens barrel 33 Illumination optical system 34 Reflector as an optical component 35 Fly-eye lens as an optical component-7 _______ -This paper size applies to China National Standard (cns) A4 (210 X 297 mm) --- I ----------- (Please read the precautions on the back before filling this page) " δ ·-line-559892 A7 ____ B7___ V. Description of the invention (Evening) 36 Condensing lens as optical element 37 Graticule curtain 38 Parallel flat glass as optical element 39 Closed room for interior lighting 42 Projection optics System 43 Cover glass 44 Lens element 45 Projection sealed chamber 50 Washing gas supply system as a gas supply source 52 Supply line 53 Filter 54 Thermostat dryer 59, 59b, 59c Lens barrel unit 59a End face of lens barrel unit 6 〇The gasket 60a as the adjusting member. The end face 61 of the gasket. Bolt 65. The annular groove 65a as the recessed part of the exhaust mechanism. The inner annular groove 65b as the recessed part of the exhaust mechanism or suction mechanism. The outer annular groove 67 of the concave part of the air mechanism or the adsorption mechanism 67 The exhaust pipe as the exhaust path 68 The exhaust device as part of the exhaust mechanism or the adsorption mechanism _8__ This paper size applies to China National Standard (CNS) A4 Specifications (210 X 297 mm) (Please read the precautions on the back before filling this page) Order --------- Line_ »559892
五、發明說明（6 68a作爲排氣機構或吸附機構之一部分的第丨排氣裝 置 68b作爲排氣機構或吸附機構之一部分的第2排氣裝 置 70, 70a，70b，74作爲切換裝置之切換閥 73a，73b 作爲排氣機構或吸附機構之一部分之凹部 的長槽 EL 曝光用光 R 作爲光罩之標線片 w 作爲基板之晶圓 [發明之實施形態] 《第1實施形態》 以下，根據圖1〜圖4，說明本發明中將半導體元件製 造用之曝光裝置，使用該曝光裝置之曝光方法，以及半導 體元件之製造方法具體化之第1實施例。 如圖1所示，前述曝光裝置，係由作爲光源之曝光光 源21、曝光裝置本體21及光束整合單元（以下，稱 BMU)23所構成。曝光光源21，作爲曝光用光El，係例如 射出F2雷射光（又=157nm)之雷射光源。又，BMU23係由 複數個光學元件(至少包含2片反射光學元件、柱面透鏡之 光束放大器)所構成，此等複數個光學元件係收容於BMU 室29。此BMU23，係將曝光光源21與曝光裝置本體22 加以光學連接，透過此BMU23將自曝光光源21射出之曝 光用光EL導引至曝光裝置本體22內。 C請先閲讀背面之注意事項再填寫本頁) 訂---------線 醣· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 559892 A7 ___B7 ___ 五、發明說明（口） 又，曝光裝置本體22，係藉由曝光用光EL之照射， 將作爲光罩之標線片上R所形成之電路圖案像，轉印至作 爲基板之晶圓W上。以下，說明該曝光裝置本體22之槪 略構成。 曝光裝置本體22之處理室（chamber)24內，於透過 BMU23導入之曝光用光EL之光軸方向，依序配置有作爲 鏡筒之照明系統鏡筒25、標線片室26、作爲鏡筒之投影系 統鏡筒27以及晶圓室28。此等鏡筒25, 27、兩室26, 28 及BMU室29，形成由曝光光源21至晶圓W之曝光用光 EL之光程的空間。又，處理室24具備空調裝置(未圖示) ，在控制曝光裝置本體全體之動作的主控制系統30之控制 下’將此處理室24內部保持於既定溫度及濕度。 照明系統鏡筒25內，收容有用以照明標線片R之照 明光學系統33。此照明光學系統33，係由複數個反射鏡 34、作爲光學積分器之複眼透鏡（棒狀積分器亦可）35、聚 光透鏡36等之光學元件所構成。複眼透鏡35，藉由來自 曝光光源21之曝光用光EL之射入，於後方形成以均勻之 照度分佈照明標線片R之多數的二次光源。於該複眼透鏡 35之後方，配置有用以對曝光用光EL之形狀進行整形之 標線片遮簾37。 於照明系統鏡筒25兩端之BMU側開口部25a及光罩 側開口部25b，配置了作爲照明光學系統之一部分光學元 件之圓板狀的平行平板玻璃38。此平行平板玻璃38，係由 能穿透曝光用光EL之物質(合成石英、螢石等)所形成。 _____1Ό_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) -------訂· I------- ·· 559892 A7 ______Β7 _______ 五、發明說明（又） 藉由BMU側開口部25a所配置之平行平板玻璃38， 將BMU室29之內部空間與照明系統鏡筒25之內部空間 加以分離。又，照明系統鏡筒25，係透過平行平板玻璃38 區劃成作爲複數個(此例中爲5個）內部空間之照明密閉室 39。於各照明密閉室39中，則以單獨、或組合若干個之形 態收容反射鏡34、複眼透鏡35及聚光透鏡36之各光學元 件，以及標線片遮簾37。 此外，於投影系統鏡筒27內，收容了用以將被照明光 學系統33所照明之標線片R上之圖案像投影至晶圓W上 的投影光學系統42。此投影光學系統42，係由作爲構成投 影光學系統之光學元件之複數個(此例中爲2個)玻璃蓋片 (cover glass)與複數個(此例中爲3個)透鏡元件44所構成 〇 又，於標線片室26內，配置有標線片載台RST。藉 由此標線片載台RST，將形成有既定圖案之標線片R保持 成能在與曝光用光EL之光軸正交之面內移動。又，於晶 圓室28內，配置有晶圓載台WST。藉由此晶圓載台WST ，將塗有對曝光用光EL具感光性之光阻劑的前述晶圓W ，保持成能在與曝光用光EL之光軸正交之面內移動、且 能沿該光軸微動。 於標線片載台RST之端部，固定有用以反射來自干涉 器(未圖示）之雷射光束的移動鏡。而標線片載台RST，即 藉由此干涉器隨時檢測掃描方向之位置，在主控制系統30 之控制下，驅動於既定之掃描方向。 ____11 _______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) — — — — — — — ^ ·11111111 559892 A7 ___ B7____ 五、發明說明（？） 又，於晶圓載台WST之端部，固定有用以反射來自干 涉器(未圖示)之雷射光束的移動鏡，而晶圓載台WST於可 動平面內之位置即藉由干涉器加以隨時檢測。晶圓載台 WST，在主控制系統30之控制下，不僅能進行掃描方向之 移動，亦能在與掃描方向垂直之方向移動。據此，即能進 行對晶圓W上之各曝光照射區域反覆進行掃描曝光之步進 掃描(step & scan)動作。 此處，以步進掃描方式將標線片R上之電路圖案掃描 曝光於晶圓W上之曝光照射區域時，標線片R上之照明區 域，係以前述標線片遮簾37整形成長方形(狹縫狀）。此照 明區域，係相對標線片R之掃描方向於垂直方向具有長邊 方向者。然後，藉由曝光時以既定速度Vr掃描標線片R， 於前述狹縫狀照明區域之一端側起朝另一端依序照明標片 R上之電路圖案。據此，照明區域內之標線片R上的電路 圖案，即透過投影光學系統42投影於晶圓W上，形成投 影區域。 此處，晶圓W，由於與標線片R爲倒立成像關係，因 此係於標線片R之掃描方向的相反方向與標線片R之掃描 同步、以既定速度Vw進行掃描。據此，能進行晶圓W之 曝光照射區域全面之曝光。掃描速度之比Vw/Vr，係對 應投影光學系統42之縮小倍率，以將標線片R上之電路 圖案正確的縮小轉印至晶圓W上之各曝光照射區域。 又，於BMU室29、各照明密閉室39、標線片示26 投影密閉室45及晶圓密閉室28之壁部所形成之開口 49， ____12___ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) — — — — —--訂 -----I I 線 ·· 559892 A7 __B7___ 五、發明說明（β ) 連接有作爲氣體供應源之淸洗氣體供應系統50。此外，於 BMU室29及各室39，26, 45, 28，係透過淸洗氣體供應系 統50及各開口 49,由微元件工廠之公用設施場內之儲氣 槽51，供應作爲淸洗氣體之惰性氣體。此處，作爲惰性氣 體，係選自氮、氦、氖、氬、氪、氙、氡等之單一氣體， 或其混合氣體。 此處，於此淸洗氣體中有可能包含雜質，亦即，有可 能包含在曝光用光EL之照射下堆積而於反射鏡34、複眼 透鏡35、聚光透鏡36、平行平板玻璃38、玻璃蓋片43及 透鏡元件44等之光學元件表面上產生結霧現象的污染物質 ，或強烈吸收F2雷射光之氧氣等之吸光物質。 因此，淸洗氣體供應系統50之供氣管線52中，安裝 有用以去除淸洗氣體中所含之上述污染物質或吸光物質等 雜質的過濾器53，以及調整成既定溫度並去除淸洗氣體中 水份的調溫乾燥器54。而BMU室29及各室39, 26, 45, 28 ，則透過淸洗氣體排出管55連接於半導體元件製造工廠之 排氣導管56。 此外，處理室24亦連接於該排氣導管56。據此，供 應至BMU室29及各室39, 26, 45, 28內之淸洗氣體，即透 過排氣導管56排出至工廠外部。 又，作爲BMU室29及各室39, 26, 45, 28內所存在之 污染物質，例如有有機矽化合物、銨鹽、硫酸鹽。晶圓W 上光阻所發出的揮發物，具有驅動部之構成零件所使用之 滑動改善劑所發出的揮發物，用以對處理室24內之電氣零 _____13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公复） (請先閱讀背面之注意事項再填寫本頁) - — — — — — — — « — 111 — — — — · 559892 A7 _____B7 五、發明說明（"） 件供電或供應信號之配線之包覆層所發出的揮發物等。因 此，排出至工廠外部之淸洗氣體中，亦有包含該等污染物 質之情形。 又，曝光裝置本體22內，設有與標線片室26相鄰之 預備室26a。此預備室26a，具有能與標線片室26連通及 與之遮斷，且能與處理室24之外部連通及與之遮斷的構造 。再者，於此預備室26a，亦連接了淸洗氣體供應系統5〇 及淸洗氣體排出管55。 於標線片R之交換時，首先，係將進行了內部氣體之 淸洗的預備室26a與標線片室26加以連通。然後，將標線 片R收容於預備室26a內所配置之標線片匣(未圖示），自 該標線片匣取出新的標線片R，將其裝載於標線片室26內 之標線片載台RST上。之後，遮斷標線片室26與預備室 26a之連通。在交換標線片匣時，則係在遮斷標線片室26 與預備室26a的狀態下將預備室26a開放於外部，自預備 室26a取出標線片匣。 另一方面，在將前述標線片匣導入預備室26a時，首 先，係在遮斷標線片室26與預備室26a的狀態下，將預備 室26a開放於外部。然後，於此狀態下將標線片匣導入預 備室26a。之後，遮斷預備室26a與外部之連通，且將淸 洗氣體供應至預備室26a以淸洗該預備室26a內部之氣體 〇 然後，自此新的標線片匣將標線片R導入標線片室26 時，在該預備室26a成爲既定之氣體狀態後，將預備室 _________ 14 張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ' " (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention (6 68a The second exhaust device 68b as part of the exhaust mechanism or adsorption mechanism 68b The second exhaust device 70, 70a, 70b, 74 as part of the exhaust mechanism or adsorption mechanism Valves 73a, 73b are long grooves EL that are recessed parts of the exhaust mechanism or suction mechanism. EL exposure light R is used as a reticle of photomask. W is used as a substrate. [Embodiment of the Invention] [First Embodiment] Below, A first embodiment of an exposure device for manufacturing a semiconductor device, an exposure method using the same, and a method for manufacturing a semiconductor device according to the present invention will be described with reference to FIGS. 1 to 4. As shown in FIG. The device is composed of an exposure light source 21 as the light source, an exposure device body 21, and a beam integration unit (hereinafter, referred to as BMU) 23. The exposure light source 21, as the exposure light El, emits F2 laser light (for example, 157 nm). Laser light source. In addition, BMU23 is composed of a plurality of optical elements (a beam amplifier including at least two reflective optical elements and a cylindrical lens). These plural optical elements are It is contained in the BMU chamber 29. This BMU23 is an optical connection between the exposure light source 21 and the exposure device body 22. Through this BMU23, the exposure light EL emitted from the exposure light source 21 is guided into the exposure device body 22. C Please read first Note on the back, please fill in this page again) Order --------- Line sugar · This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 559892 A7 ___B7 ___ 5. Description of the invention ( The exposure device main body 22 is irradiated with the exposure light EL to transfer the circuit pattern image formed by R on the reticle as a photomask onto the wafer W as a substrate. Hereinafter, a schematic configuration of the exposure apparatus body 22 will be described. In the processing chamber 24 of the exposure device body 22, in the optical axis direction of the exposure light EL introduced through the BMU 23, an illumination system lens barrel 25 as a lens barrel, a reticle chamber 26, and a lens barrel are sequentially arranged. Lens system 27 and wafer chamber 28 of the projection system. These lens barrels 25, 27, the two chambers 26, 28, and the BMU chamber 29 form a space of the optical path of the exposure light EL from the exposure light source 21 to the wafer W. The processing chamber 24 is provided with an air-conditioning device (not shown), and the interior of the processing chamber 24 is maintained at a predetermined temperature and humidity under the control of a main control system 30 that controls the overall operation of the exposure apparatus body. The illumination system lens barrel 25 houses an illumination optical system 33 for illuminating the reticle R. This illumination optical system 33 is composed of optical elements such as a plurality of reflecting mirrors 34, a fly-eye lens (optionally a rod-shaped integrator) 35 as an optical integrator, and a condenser lens 36. The fly-eye lens 35 is formed by the exposure light EL from the exposure light source 21 to form a secondary light source for illuminating the reticle R with a uniform illuminance distribution at the rear. Behind the fly-eye lens 35, a reticle curtain 37 is arranged to shape the shape of the exposure light EL. The BMU-side openings 25a and the reticle-side openings 25b at both ends of the lens barrel 25 of the lighting system are provided with a plate-shaped parallel flat glass 38 as a part of the optical elements of the lighting optical system. The parallel plate glass 38 is made of a substance (synthetic quartz, fluorite, etc.) that can penetrate the light EL for exposure. _____ 1Ό_ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) ------- Order · I ------- 559892 A7 ______ Β7 _______ 5. Explanation of the invention (again) The internal space of the BMU chamber 29 and the internal space of the lens barrel 25 of the lighting system are separated by the parallel flat glass 38 arranged on the BMU side opening 25a. In addition, the illumination system lens barrel 25 is an illumination sealed room 39 which is divided into a plurality of (five in this example) internal spaces through a parallel flat glass 38. In each of the lighting enclosed rooms 39, the optical elements of the reflecting mirror 34, the fly-eye lens 35 and the condenser lens 36, and the reticle curtain 37 are housed individually or in combination. In addition, the projection system lens barrel 27 houses a projection optical system 42 for projecting a pattern image on the reticle R illuminated by the illumination optical system 33 onto the wafer W. The projection optical system 42 is composed of a plurality of (in this example, two) cover glass and a plurality of (in this example, three) lens elements 44 as optical elements constituting the projection optical system. 〇In the reticle chamber 26, a reticle stage RST is disposed. By this reticle stage RST, the reticle R having a predetermined pattern is held to be movable in a plane orthogonal to the optical axis of the exposure light EL. In the wafer chamber 28, a wafer stage WST is arranged. By the wafer stage WST, the wafer W coated with a photoresist sensitive to the exposure light EL is held so that the wafer W can be moved in a plane orthogonal to the optical axis of the exposure light EL and can be moved. Flick along this optical axis. A moving mirror for reflecting a laser beam from an interferometer (not shown) is fixed to an end of the reticle stage RST. The reticle stage RST detects the position of the scanning direction at any time by the interferometer, and is driven in the predetermined scanning direction under the control of the main control system 30. ____11 _______ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the notes on the back before filling out this page) — — — — — — — ^ 11111111 559892 A7 ___ B7____ V. Description of the Invention (?) A moving mirror for reflecting a laser beam from an interferometer (not shown) is fixed to an end of the wafer stage WST, and the position of the wafer stage WST in a movable plane is determined by Interferometers are detected at any time. Under the control of the main control system 30, the wafer stage WST can move not only in the scanning direction, but also in a direction perpendicular to the scanning direction. According to this, a step & scan operation can be performed on each exposure irradiation area on the wafer W by repeatedly performing scan exposure. Here, when the circuit pattern on the reticle R is scanned and exposed to the exposure irradiation area on the wafer W in a step-and-scan manner, the illumination area on the reticle R is formed by the aforementioned reticle curtain 37. Rectangle (slit-like). This illuminated area is one with a long side direction in the vertical direction with respect to the scanning direction of the reticle R. Then, the reticle R is scanned at a predetermined speed Vr during exposure, and the circuit patterns on the reticle R are sequentially illuminated from one end of the slit-shaped illumination area toward the other end. Accordingly, the circuit pattern on the reticle R in the illumination area is projected on the wafer W through the projection optical system 42 to form a projection area. Here, since the wafer W is in an inverted imaging relationship with the reticle R, the wafer W is scanned at a predetermined speed Vw in synchronization with the scanning of the reticle R in a direction opposite to the scanning direction of the reticle R. According to this, the entire exposure of the exposure irradiation area of the wafer W can be performed. The scanning speed ratio Vw / Vr corresponds to the reduction magnification of the projection optical system 42 in order to accurately reduce and transfer the circuit pattern on the reticle R to each of the exposure irradiation areas on the wafer W. In addition, the opening 49 formed in the wall portion of the BMU room 29, each lighting confined room 39, the reticle 26, the projection confined room 45, and the wafer confined room 28, ____12___ This paper standard applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) — — — — ——— Order ----- II line ·· 559892 A7 __B7___ V. Description of the invention (β) Connection has a role The gas supply source is a scrubbing gas supply system 50. In addition, in the BMU room 29 and each of the rooms 39, 26, 45, 28, the purge gas is supplied through the purge gas supply system 50 and each opening 49 from the gas storage tank 51 in the utility facility field of the micro-component factory to be used as purge gas. Of inert gas. Here, the inert gas is a single gas selected from nitrogen, helium, neon, argon, krypton, xenon, krypton, or the like, or a mixed gas thereof. Here, the cleaning gas may contain impurities, that is, it may be deposited under the exposure light EL and deposited on the reflector 34, fly-eye lens 35, condenser lens 36, parallel plate glass 38, glass. Contaminants that cause fogging on the surface of optical elements such as the cover sheet 43 and the lens element 44 or light-absorbing substances such as oxygen that strongly absorbs F2 laser light. Therefore, the gas supply line 52 of the scrubbing gas supply system 50 is equipped with a filter 53 for removing impurities such as the above-mentioned pollutants or light-absorbing substances contained in the scrubbing gas, and is adjusted to a predetermined temperature and removed from the scrubbing gas. Moisture conditioning dryer 54. The BMU chamber 29 and each of the chambers 39, 26, 45, 28 are connected to an exhaust duct 56 of a semiconductor device manufacturing plant through a purge gas exhaust pipe 55. In addition, the processing chamber 24 is also connected to the exhaust duct 56. Accordingly, the purge gas supplied to the BMU chamber 29 and each of the chambers 39, 26, 45, 28 is discharged through the exhaust duct 56 to the outside of the plant. In addition, as the pollutants existing in the BMU chamber 29 and each of the chambers 39, 26, 45, 28, there are, for example, organic silicon compounds, ammonium salts, and sulfates. The volatiles from the photoresist on wafer W have the volatiles from the sliding improver used by the components of the drive unit to reduce the electrical zero in the processing chamber 24. _____13 This paper standard applies Chinese national standards ( CNS) A4 specification (210 X 297 public reply) (Please read the precautions on the back before filling this page)-— — — — — — — «— 111 — — — — 559892 A7 _____B7 5. Description of the invention (" ) Volatile substances emitted by the coating of the wiring of the power supply or signal supply. Therefore, the purge gas exhausted to the outside of the factory may contain these pollutants. In the exposure apparatus body 22, a preparation chamber 26a adjacent to the reticle chamber 26 is provided. The preparation room 26a has a structure capable of communicating with and blocking the reticle chamber 26, and can communicate with and block the outside of the processing chamber 24. Furthermore, a purge gas supply system 50 and a purge gas exhaust pipe 55 are also connected to the preparation room 26a. When the reticle R is exchanged, first, the preparatory chamber 26a which has been rinsed with the internal gas is communicated with the reticle chamber 26. Then, the reticle R is housed in a reticle cassette (not shown) arranged in the preparation room 26 a, and a new reticle R is taken out from the reticle cassette and loaded into the reticle chamber 26. On the reticle stage RST. Thereafter, the communication between the reticle chamber 26 and the preparation chamber 26a is blocked. When the reticle cassette is exchanged, the reticle chamber 26a is opened to the outside with the reticle chamber 26 and the preparation chamber 26a blocked, and the reticle cassette is taken out from the preparation chamber 26a. On the other hand, when the reticle cassette is introduced into the preparatory chamber 26a, the preparatory chamber 26a is opened to the outside while the reticle chamber 26 and the preparatory chamber 26a are blocked. Then, the reticle cassette is introduced into the preparation room 26a in this state. After that, the communication between the preparation chamber 26a and the outside is blocked, and a scrubbing gas is supplied to the preparation chamber 26a to scrub the gas inside the preparation chamber 26a. Then, a new reticle cassette is used to introduce the reticle R into the label. In the thread room 26, after the preparation room 26a becomes a predetermined gas state, the preparation room _________ 14 scales apply the Chinese National Standard (CNS) A4 specification (210 X 297 mm) '" (Please read the back first (Notes for filling in this page)
P I 丨 I I I I I 訂- - - - - - --- 559892 A7 __B7 _ 五、發明說明（7 ) 26a與標線片室26加以連通，將前述標線片R導入該標線 片室26。如此一來，標線片室26內標線片R之交換，一 定透過預備室26a(以淸洗氣體調整成既定之氣體狀態)來進 行，不致使標線片室26直接開放至外部。 又，於曝光裝置本體22，設有與晶圓室28相鄰之預 備室28a。此預備室28a，具有能與晶圓室28連通及與之 遮斷，且能與處理室24之外部連通及與之遮斷的構造。再 者，於此預備室28a，亦連接了淸洗氣體供應系統50及淸 洗氣體排出管55。 又，晶圓W自晶圓室28取出及導入晶圓室28內，皆 係通過與自標線片室26取出標線片R之過程及將標線片R 導入標線片室26之過程相同的過程進行。亦即。透過以淸 洗氣體調整成既定之氣體狀態預備室28a來進行晶圓W之 交換，此交換即能在不將晶圓室28開放至外部的狀態下進 行。又，此時，晶圓W在預備室28a與晶圓室28間，係 在匣中收容複數片之狀態下進行搬送。 其次，說明收容投影光學系統42之投影系統鏡筒27 之構成。 如圖2所示，投影系統鏡筒27 ’係用以保持各透鏡兀 件44之複數個鏡筒單元59透過墊片60(作爲調整構件)以 螺栓61(參照圖3)相互固定而構成。此墊片60，係由金屬( 例如，與形成投影系統鏡筒27之材料同性質之材料)形成 ，且爲圓圈狀，爲調整兩鏡筒單元59之各透鏡元件44於 光軸方向(即前述曝光用光EL之光軸方向)之相對位置’而 _ 15 ____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) I I I 1 I I 1 訂·111!1--· 559892 A7 ___B7___ 五、發明說明（G ) 裝於相鄰2個鏡筒單元59之端面59a之間者。 位於投影系統鏡筒27兩端之2個鏡筒單元59b，分別 連接有淸洗氣體供應系統50之供氣管線52。位於投影系 統鏡筒27之大致中央的鏡筒單元59c，設有用以將該投影 系統鏡筒27支撐於曝光裝置本體22之架台22a的突緣 FLG。又，於此鏡筒單元59c，連接了淸洗氣體排出管55 〇 此處，設有突緣FLG之鏡筒單元59c及較其下側，亦 即，配置於晶圓W側之鏡筒59內，藉由未圖示之保持構 件保持有透鏡元件44。此外，較突緣FLG上側，亦即， 配置於標線片R側之鏡筒單元59內，分別藉由未圖示之 保持構件以移動可能之方式保持有至少1個透鏡元件44( 圖2中僅圖示1個）。此透鏡元件44，係藉由安裝於鏡筒 單元59周壁之壓電元件62，在主控制系統30之控制下驅 動。 又，透鏡元件44，由於係被保持構件保持其外周之複 數處(例如3處），因此，透鏡元件44與保持構件之間會產 生間隙。此外，由於保持構件係安裝在鏡筒單元59內壁之 複數位置，因此內壁與保持構件之間會產生間隙。藉由此 等間隙，連通各鏡筒單元59內之空間，藉由玻璃蓋片43 與各鏡筒單元59之內壁來形成投影密閉室45。 供應至投影系統鏡筒27兩端部之鏡筒單元59b之淸 洗氣體，通過各鏡筒單元59之內壁與保持構件，或與保持 構件與透鏡元件44之間的間隙，到達大致位於中央部之鏡 _ 16_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公~ (請先閲讀背面之注意事項再填寫本頁) -------訂-----II-- »· 559892 A7 u·1·11 1 "11 "**" 五、發明說明（π) 筒單元59c。隨著此淸洗氣體之流動，投影系統鏡筒27之 投影密閉室45內之氣體，即被淸洗氣體置換。據此’投影 密閉室45存在之包含吸光物質及污染物質之氣體’即透過 連接於大致中央部之鏡筒單元59c的淸洗氣體排出管55及 排氣導管56，排出至曝光裝置本體22之外部。 如圖3及圖4所示，與相鄰鏡筒單元59之端面59a卡 合之墊片60之兩端面60a，分別形成有爲排氣機構或吸附 機構之一部分、作爲氣體吸引用凹部之環狀槽65。此環狀 槽65之底面，以等間隔穿設有複數個（圖4中爲3個)排氣 孔66。於此排氣孔66，透過排氣管67，連接有用以將環 狀槽65內抽成真空、作爲氣體排出機構或吸附機構之一部 分的排氣裝置68(參照圖2)。 如圖2所示，此排氣裝置68，係由真空泵69與作爲 切換裝置之切換閥70所構成。真空泵69，係在各鏡筒單 元59與墊片60，在與各透鏡元件44之光軸正交之平面內 的相對位置調整好的狀態下積層時，視需要排出環狀槽65 內之氣體將之抽成真空。 在使曝光用光EL通過投影系統鏡筒27內之情形等時 ，係控制切換閥70，以將環狀槽65內與真空泵69加以連 通，使該環狀槽65內成爲抽成真空的狀態。此時，如圖3 所示，各鏡筒單元59之端面59a與墊片6〇之端面6〇a之 間存在之氣體，即被吸至環狀槽65內，藉真空泵69進行 排氣，而成爲投影系統鏡筒27之投影密閉室45相對外氣 隔離之第1狀態的隔離狀態。 ___ 17_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公t ) (請先閱讀背面之注意事項再填寫本頁) - 線· 559892 A7 _ B7_____ 五、發明說明（) 又，投影系統鏡筒27內，於此隔離狀態下’考慮透過 各鏡筒單元59間之環狀槽65以排氣裝置68所排出之氣體 量，係從淸洗氣體供應裝置50供應淸洗氣體，以使投影密 閉室45內成爲與大氣壓相等之壓力或爲正壓。 在諸如調整投影系統鏡筒27之各鏡筒單元59之相對 位置時，係遮斷環狀槽65內與真空泵69之間的連通’控 制切換閥70，以解除環狀槽65內之真空。進一步的’將 環狀槽65內與作爲氣體供應源之淸洗氣體供應系統50之 供氣管線52加以連通，控制切換閥70，以將淸洗氣體供 應至該環狀槽65內。此場合，於各鏡筒單元59之端面 59a與墊片60之端面60a之間，以既定壓力供應淸洗氣體 ，亦即，朝各鏡筒單元59之端面59a與墊片60之端面 60a之間供應淸洗氣體，在鬆開螺栓61之狀態下，成爲在 各鏡筒單元59之端面59a與墊片60之端面60a之間，產 生相互分開方向之力量之第3狀態的解除狀態。 因此，根據本實施形態，能獲得以下效果。 (1)此投影系統鏡筒27,爲了相對外氣隔離投影密閉 室45，係在鏡筒單元59之間，連接用以排出該鏡筒單元 59間之氣體的排氣裝置68。 以排氣裝置68排出鏡筒單元59間存在之氣體，能相 對外氣隔離投影系統鏡筒27之投影密閉室45。據此，能 有效的抑制外氣侵入投影密閉室45內，抑制與外氣一起之 氧氣等吸光物質、或在曝光用光EL之照射下產生反應而 造成透鏡元件44之污染的污染物質等之侵入。因此，即使 18 本紙張尺¥適用中國國家標準（CNS)A4規格（210 X 297公釐1 ^ (請先閱讀背面之注意事項再填寫本頁) I I I I I I I 訂-11!! *5^ »_ 559892 A7 ___B7_____ 五、發明說明（A) 是使用真空紫外帶之曝光用光EL，亦不致降低到達晶圓W 面之曝光用光EL之能量，而能維持曝光處理之高效率。 (2) 此投影系統鏡筒27中，排氣裝置68係連接於鏡 筒單元59間所配置之墊片60。因此，不需於鏡筒單元59 側連接排氣裝置68，能抑制鏡筒單元59、甚至投影系統鏡 筒27全體構成之複雜化。 又，此投影系統鏡筒27中，各鏡筒單元59與墊片60 係金屬加工面彼此之接觸，不需如相對外氣藉由墊圈來隔 離投影密閉室45之情形般，於鏡筒單元59間安裝中介物 。因此，亦不至於因該墊圈之揮發物，造成投影密閉室45 內潔淨度之降低，或因該墊圈之彈力使各鏡筒單元59之間 產生相對位置之變化(偏移）。 (3) 此投影系統鏡筒27中，與鏡筒單元59之端面59a 對向之墊片60之端面60a，設有連接於排氣裝置68之環 狀槽65。因此，使該排氣裝置68動作，即能將鏡筒單元 59之端面59a與墊片60之端面60a之間存在之氣體，吸 至環狀槽65內，進而適當的排出兩端面59a，60a之間的氣 體。 再者，由於引導兩端面59a，60a間之氣體的凹部爲環 狀槽65，因此能於該鏡筒單元59全周排出兩端面59a，60a 間之氣體。是以，能更爲有效的排出兩端面59a，60a間之 氣體，更進一步有效的抑制外氣侵入投影密室45。 (4) 此投影系統鏡筒27，具備透過排氣管67將環狀 槽65內抽成真空之真空泵69。因此，使該真空泵69動作 __19_— 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ιδ]· · -線· 559892 A7 ___B7__ 五、發明說明（β ) ’即能以良好之效率排出鏡筒單元59之端面59a與墊片 \6〇之端面60a之間存在之氣體，使兩端面59a，60a彼此吸 I，良好的抑制外氣侵入投影密閉室45。 (5) 此投影系統鏡筒27中，排氣裝置68具有切換閥 70，以切換成將環狀槽65內抽成真空之隔離狀態，與解除 該真空狀態，對環狀槽65內供應淸洗氣體之解除狀態。因 此，在使曝光用光EL通過投影系統鏡筒27內時，係控制 切換閥70，以將環狀槽65內與真空泵69加以連通，據此 使投影密閉室45成爲相對外氣隔離的隔離狀態。另一方面 ，在產生需相對移動各鏡筒單元59時，係藉由切換閥70 將環狀槽65與淸洗氣體供應系統50加以連通，而能輕易 的切換成解除狀態。 據此，在隔離狀態下能保持投影密閉室45之潔淨，在 前述解除狀態下，則能成爲各鏡筒單元59間產生相互分離 狀態。此外，在該解除狀態下，能使各鏡筒單元59順暢的 移動，例如在調整透鏡元件44之相對位置時，藉由調整各 鏡筒單元59之相對位置而輕易的完成。 (6) 此曝光裝置本體22中，投影光學系統42係收容 在投影系統鏡筒27內，此投影系統鏡筒27連接有用以排 出各鏡筒單元59之端面59a與墊片60之端面60a間之氣 體的排氣裝置68。因此，能抑制隨外氣侵入之吸光物質侵 入投影系統鏡筒27之投影密閉室45 ’能維持該投影密閉 室45內之高潔淨度。因此，能抑制曝光用光EL通過投影 光學系統42時曝光用光EL之能量降低，改善投影光學系 20 氏張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱^ (請先閱讀背面之注意事項再填寫本頁) - I 丨 I I I 1 I ^^ ·1111111 ». A7 559892 ___B7 五、發明說明（彳） (請先閱讀背面之注意事項再填寫本頁) 統42之光學特性。是以’能高精度的將標線片R上圖案 之像準印至晶圓W上。此外’即使該圖案係非常微細之圖 案，亦能以良好之精度加以曝光。 《第2實施形態》 接著，以和第1實施形態不同部分爲中心，說明本發 明之第2實施形態。 此第2實施形態，如圖5及圖6所示，投影系統鏡筒 27中，鏡筒單元59並不安裝墊片60，而係相鄰鏡筒單元 59之端面彼此成接觸狀態’亦即，係直接積層。此外，在 相鄰鏡筒單元59之一鏡筒單元59之端面59a，於螺栓61 之內側形成環狀槽65。於此環狀槽65，與第1實施形態同 樣的，穿設有複數個排氣孔66，以連接排氣裝置68。 因此，根據本實施形態，除了能獲得與第1實施形態 相同之（1)及(4)〜（6)的效果外，亦能獲得下列效果。 --線· (7)此投影系統鏡筒27中，連接於排氣裝置68之環 狀槽65，係設於鏡筒單元59之端面59a。因此，使該排氣 裝置68動作，即能將相鄰各鏡筒單元59之端面59a間存 在之氣體吸至環狀槽65內後，適當的加以排出。 再者，由於引導兩端面59a間之氣體的凹部爲環狀槽 65，因此能於該鏡筒單元59全周排出兩端面59a間之氣體 。是以，能更爲有效的排出兩端面59a間之氣體，更進一 步有效的抑制外氣侵入投影密室45。 又，此投影系統鏡筒27中，各鏡筒單元59，皆係金 屬加工面彼此之接觸，不需如相對外氣藉由墊圏來隔離投 ___21_ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 559892 A7 ________Β7___ 五、發明說明（θ ) 影密閉室45之情形般，於鏡筒單元59間安裝中介物。因 此，亦不至於因該墊圈之揮發物，造成投影密閉室45內潔 淨度之降低，或因該墊圈之彈力使各鏡筒單元59之間產生 相對位置之變化(偏移）。因此，能將各鏡筒單元59相對配 置於更正確之位置。 《第3實施形態》 接著，以和前述第1實施形態不同部分爲中心，說明 本發明之第3實施形態。 此第3實施形態，如圖7所示，於墊片60之端面60a ，設有成同圓心狀之作爲凹部(排氣機構之一部分）的複數 個環狀槽65a，65b，於各環狀槽65a，65b，與第1實施形 態同樣的，穿設有複數個排氣孔66。又，內側環狀槽65a 係連接於作爲排氣機構或吸附機構之一部分的第1排氣裝 置68a，外側環狀槽65b則係連接於與該第1排氣裝置68a 不同之，作爲排氣機構或吸附機構之一部分的第1排氣裝 置68b。各排氣裝置68a，68b，分別具備獨立之真空泵69a， 69b與切換閥70a，70b。 因此，根據本實施形態，除了能獲得與第1實施形態 相同之（1)〜（6)的效果外，亦能獲得下列效果。 (8)此投影系統鏡筒27中，係於墊片60端面60a，設 有複數個成同心圓狀、連接於第1及第2排氣裝置68a， 68b之環狀槽65a，65b。因此，能將各鏡筒單元59之端面 59a與墊片60之端面60a間之氣體，透過複數個環狀槽 65a，65b，更爲有效的加以排出。據此，能更爲確實的抑制 ___22______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) # 丨線- 559892 A7 ____B7 ___ 五、發明說明（^) 外氣侵入投影系統鏡筒27之投影密室45。 《第4實施形態》 接著，以和前述第3實施形態不同部分爲中心，說明 本發明之第4實施形態。 此第4實施形態，如圖8所示，於墊片60之端面60a ，設有複數個作爲凹部(排氣機構或吸附機構之一部分）的 長槽73a，73b，各3條之長槽73a，73b係以等間隔、排列 成同心圓狀之雙重圓形。又，排列於內側之長槽73a與排 列於外側之長槽73b，係配置成相位互異，於墊片60之全 周存在任一之長槽73a，73b。藉由此種配置，即使是不連 續的長槽73a，73b，亦能使其發揮與各實施形態之環狀槽 65同樣的作用。於各長槽73a，73b，穿設有排氣孔66，以 連接於排氣裝置68。 於此排氣裝置68，設有爲真空泵69與排氣機構或吸 附機構之一部分的切換閥74。在使曝光用光EL通過投影 系統鏡筒27內之情形等時，係將長槽73a，73b與真空泵 69加以連通，將該長槽73a，73b內抽成真空。此時，各鏡 筒單元59之端面59a與墊片60之端面60a之間存在之氣 體，即被吸至長槽73a，73b內，藉真空泵69進行排氣，而 成爲投影系統鏡筒27之投影密閉室45相對外氣隔離的隔 離狀態。 另一方面，切換閥74，在諸如調整投影系統鏡筒27 之各鏡筒單元59之相對位置時，係遮斷長槽73a，73b內與 真空泵69之間的連通，以解除該長槽73a，73b內之真空。 _ _23_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)P I 丨 I I I I I Order--------- 559892 A7 __B7 _ V. Description of the Invention (7) 26a communicates with the marking line chamber 26, and the aforementioned marking line R is introduced into the marking line chamber 26. In this way, the exchange of the reticle R in the reticle chamber 26 must be performed through the preparatory chamber 26a (adjusted to the predetermined gas state with the washing gas), so that the reticle chamber 26 is not opened directly to the outside. The exposure apparatus body 22 is provided with a preparation chamber 28a adjacent to the wafer chamber 28. The preparation chamber 28a has a structure capable of communicating with and blocking the wafer chamber 28, and is capable of communicating with and blocking the outside of the processing chamber 24. In addition, a purge gas supply system 50 and a purge gas exhaust pipe 55 are also connected to the preparation room 28a. In addition, the wafer W is taken out from the wafer chamber 28 and introduced into the wafer chamber 28 through the process of removing the reticule R from the reticule chamber 26 and the process of introducing the reticule R into the reticule chamber 26. The same process is performed. that is. The wafer W is exchanged by preparing the purge gas into the predetermined gas state preparation chamber 28a, and this exchange can be performed without opening the wafer chamber 28 to the outside. At this time, the wafer W is transferred between the preparatory chamber 28a and the wafer chamber 28 while a plurality of wafers are stored in a cassette. Next, the configuration of the projection system lens barrel 27 that houses the projection optical system 42 will be described. As shown in FIG. 2, the lens barrel 27 'of the projection system is configured to hold a plurality of lens barrel units 59 of each lens element 44 through pads 60 (as adjustment members) and fixed to each other with bolts 61 (see FIG. 3). The spacer 60 is formed of metal (for example, a material having the same properties as the material forming the lens barrel 27 of the projection system) and has a circular shape. In order to adjust each lens element 44 of the two lens barrel units 59 in the optical axis direction (that is, The relative position of the aforementioned exposure light EL in the optical axis direction) and _ 15 ____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) III 1 II 1 Order · 111! 1-- · 559892 A7 ___B7___ V. Description of the Invention (G) Installed between the end faces 59a of two adjacent barrel units 59. The two lens barrel units 59b located at both ends of the lens barrel 27 of the projection system are connected to the gas supply lines 52 of the scrubbing gas supply system 50, respectively. A lens barrel unit 59c located approximately at the center of the projection system lens barrel 27 is provided with a flange FLG for supporting the projection system lens barrel 27 on the stand 22a of the exposure apparatus body 22. In addition, the lens barrel unit 59c is connected to the purging gas exhaust pipe 55. Here, a lens barrel unit 59c provided with a flange FLG and a lens barrel 59 disposed below the wafer barrel unit 59c are disposed on the wafer W side. The lens element 44 is held by a holding member (not shown). In addition, at least one lens element 44 (FIG. 2) is held in an upwardly movable side of the flange FLG, that is, in the lens barrel unit 59 disposed on the reticle R side by a holding member (not shown) in a manner that is possible to move. Only one is shown in the figure). The lens element 44 is driven under the control of the main control system 30 by a piezoelectric element 62 mounted on the peripheral wall of the lens barrel unit 59. In addition, since the lens element 44 is held at a plurality of locations (for example, three locations) on its outer periphery by the holding member, a gap is generated between the lens element 44 and the holding member. In addition, since the holding members are installed at plural positions on the inner wall of the lens barrel unit 59, a gap is generated between the inner wall and the holding member. With such a gap, the space in each lens barrel unit 59 is communicated, and the projection sealed chamber 45 is formed by the cover glass 43 and the inner wall of each lens barrel unit 59. The cleaning gas supplied to the lens barrel units 59b at both ends of the lens barrel 27 of the projection system passes through the inner wall of each lens barrel unit 59 and the holding member, or the gap between the holding member and the lens element 44, and reaches approximately the center.部 之 镜 _ 16_____ This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 male ~ (Please read the precautions on the back before filling this page) ------- Order ----- II -»· 559892 A7 u · 1 · 11 1 " 11 " ** " V. Description of the invention (π) Tube unit 59c. With the flow of the washing gas, the projection sealed chamber of the lens barrel 27 of the projection system The gas in 45 is replaced by the scrubbing gas. Based on this, the “gas containing light-absorbing substances and pollutants existing in the projection sealed chamber 45” is passed through the scrubbing gas exhaust pipe 55 and the lens barrel unit 59c connected to the substantially central portion. The exhaust duct 56 is exhausted to the outside of the exposure device body 22. As shown in Figs. 3 and 4, both end faces 60a of the gasket 60 engaged with the end face 59a of the adjacent lens barrel unit 59 are formed as exhaust air, respectively. An annular groove 65 serving as a recess for gas suction as part of a mechanism or an adsorption mechanism. This ring The bottom surface of the groove 65 is provided with a plurality of (three in FIG. 4) exhaust holes 66 at equal intervals. Here, the exhaust holes 66 are connected through the exhaust pipe 67 to draw the inside of the annular groove 65. An exhaust device 68 (see FIG. 2) that is a part of a vacuum and a gas exhaust mechanism or an adsorption mechanism. As shown in FIG. 2, the exhaust device 68 is composed of a vacuum pump 69 and a switching valve 70 as a switching device. Vacuum pump 69. When laminated in a state where the relative positions in the plane orthogonal to the optical axis of each lens element 44 are adjusted in each lens barrel unit 59 and the spacer 60, the gas in the annular groove 65 is discharged as necessary. When the exposure light EL passes through the lens barrel 27 of the projection system, etc., the switching valve 70 is controlled to communicate the inside of the annular groove 65 with the vacuum pump 69 so that the inside of the annular groove 65 becomes At this time, as shown in FIG. 3, the gas existing between the end surface 59a of each lens barrel unit 59 and the end surface 60a of the gasket 60 is sucked into the annular groove 65, and The vacuum pump 69 exhausts the air, and becomes the first sealed airtight chamber 45 of the lens barrel 27 of the projection system from the outside air. The state of isolation. ___ 17_ This paper size is applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 g t) (Please read the precautions on the back before filling this page)-Line · 559892 A7 _ B7_____ V. Description of the invention () In addition, the inside of the lens barrel 27 of the projection system is considered to be supplied from the cleaning gas supply device 50 through the exhaust gas supply device 68 through the annular groove 65 between the lens barrel units 59 and the exhaust device 68. The gas is purged so that the inside of the projection sealed chamber 45 becomes a pressure equal to the atmospheric pressure or a positive pressure. When, for example, the relative positions of the lens barrel units 59 of the lens barrel 27 of the projection system are adjusted, the communication between the inside of the annular groove 65 and the vacuum pump 69 is blocked and the switching valve 70 is controlled to release the vacuum in the annular groove 65. Further, 'the inside of the annular groove 65 is communicated with the gas supply line 52 of the purge gas supply system 50 as a gas supply source, and the switching valve 70 is controlled to supply the purge gas into the annular groove 65. In this case, a cleaning gas is supplied between the end surface 59a of each lens barrel unit 59 and the end surface 60a of the gasket 60 at a predetermined pressure, that is, toward the end surface 59a of each lens barrel unit 59 and the end surface 60a of the gasket 60. The cleaning gas is temporarily supplied, and in a state where the bolt 61 is loosened, a third state of release force is generated between the end surface 59a of each lens barrel unit 59 and the end surface 60a of the spacer 60 in a direction separated from each other. Therefore, according to this embodiment, the following effects can be obtained. (1) The lens barrel 27 of the projection system is connected between the lens barrel units 59 in order to isolate the projection sealed chamber 45 from outside air, and an exhaust device 68 for exhausting the gas between the lens barrel units 59 is connected. The gas existing between the lens barrel units 59 is exhausted by the exhaust device 68, which can isolate the projection sealed chamber 45 of the lens barrel 27 of the projection system to the outside air. According to this, it is possible to effectively suppress the intrusion of outside air into the projection sealed chamber 45, suppress the absorption of light absorbing substances such as oxygen together with the outside air, or the pollution substances that cause the lens element 44 to contaminate due to the reaction under the exposure light EL and the like. Trespass. Therefore, even 18 paper rule ¥ applies to China National Standard (CNS) A4 specification (210 X 297 mm 1 ^ (Please read the precautions on the back before filling this page) IIIIIII Order-11 !! * 5 ^ »_ 559892 A7 ___B7_____ 5. Description of the Invention (A) The exposure light EL using the vacuum ultraviolet band will not reduce the energy of the exposure light EL reaching the W side of the wafer, and can maintain the high efficiency of the exposure process. (2) This projection In the lens barrel 27 of the system, the exhaust device 68 is connected to the gasket 60 disposed between the lens barrel units 59. Therefore, it is not necessary to connect the exhaust device 68 to the lens barrel unit 59 side, which can suppress the lens barrel unit 59 and even projection The overall structure of the system lens barrel 27 is complicated. Also, in this projection system lens barrel 27, each lens barrel unit 59 and the gasket 60 are in metal contact with each other, and it is not necessary to use a gasket to isolate the projection and seal as opposed to outside air. As in the case of the chamber 45, an intermediary is installed between the lens barrel units 59. Therefore, the volatiles of the gasket will not reduce the cleanliness in the projection sealed chamber 45, or the lens barrel units will be caused by the elasticity of the gasket. Changes in relative position between 59 (3) In the lens barrel 27 of this projection system, the end surface 60a of the gasket 60 facing the end surface 59a of the lens barrel unit 59 is provided with an annular groove 65 connected to the exhaust device 68. Therefore, the row The air device 68 is operated, that is, the gas existing between the end surface 59a of the lens barrel unit 59 and the end surface 60a of the spacer 60 can be sucked into the annular groove 65, and the gas between the end surfaces 59a, 60a can be appropriately discharged. Furthermore, since the recessed portion for guiding the gas between the both end surfaces 59a and 60a is the annular groove 65, the gas between the both end surfaces 59a and 60a can be exhausted over the entire circumference of the lens barrel unit 59. Therefore, the gas can be more effectively exhausted. The gas between the two end faces 59a and 60a can further effectively prevent outside air from entering the projection chamber 45. (4) The lens barrel 27 of this projection system is provided with a vacuum pump 69 that evacuates the inside of the annular groove 65 through the exhaust pipe 67. Therefore, make the vacuum pump 69 operate. __19_— This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) ιδ] · · -line · 559892 A7 ___B7__ 5. Description of the Invention (β) 'That is, the mirror can be discharged with good efficiency The gas existing between the end surface 59a of the unit 59 and the end surface 60a of the gasket \ 60 allows the two end surfaces 59a, 60a to attract each other, and well prevents outside air from entering the projection sealed chamber 45. (5) The lens barrel 27 of this projection system In the exhaust device 68, a switching valve 70 is provided to switch to an isolated state in which the annular groove 65 is evacuated, and to release the vacuum state, and to release the purge gas into the annular groove 65. Therefore, in When the exposure light EL is passed through the lens barrel 27 of the projection system, the switching valve 70 is controlled to communicate the inside of the annular groove 65 with the vacuum pump 69, and the projection sealed chamber 45 is thereby isolated from the outside air. On the other hand, when each lens barrel unit 59 needs to be moved relatively, the annular groove 65 and the scrubbing gas supply system 50 are communicated by the switching valve 70, and the switching can be easily switched to the released state. As a result, the projection sealed chamber 45 can be kept clean in the isolated state, and the lens barrel units 59 can be separated from each other in the released state. In addition, in this released state, each lens barrel unit 59 can be smoothly moved. For example, when the relative position of the lens element 44 is adjusted, it can be easily completed by adjusting the relative position of each lens barrel unit 59. (6) In the exposure device body 22, the projection optical system 42 is housed in the projection system lens barrel 27, and the projection system lens barrel 27 is connected to discharge the end surface 59a of each lens barrel unit 59 and the end surface 60a of the spacer 60 Of the gas exhaust device 68. Therefore, it is possible to suppress the intrusion of light-absorbing substances with the intrusion of outside air into the projection sealed chamber 45 'of the lens barrel 27 of the projection system, and it is possible to maintain a high cleanliness in the projection sealed chamber 45. Therefore, it is possible to suppress the reduction of the energy of the exposure light EL when the exposure light EL passes through the projection optical system 42 and improve the projection optical system's 20-degree scale. Applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love ^ (Please read first Note on the back then fill in this page)-I 丨 III 1 I ^^ · 1111111 ». A7 559892 ___B7 V. Description of the invention (彳) (Please read the notes on the back before filling out this page) Optical characteristics of the system 42. Therefore, the image of the pattern on the reticle R can be accurately printed on the wafer W with a high accuracy. In addition, even if the pattern is a very fine pattern, it can be exposed with good accuracy. "Second Embodiment" Next, the second embodiment of the present invention will be described focusing on the different parts from the first embodiment. As shown in Figs. 5 and 6, in the second embodiment, the lens barrel unit 59 of the projection system lens barrel 27 is not The gasket 60 is installed so that the end surfaces of the adjacent barrel units 59 are in contact with each other, that is, directly laminated. In addition, the end surface 59 a of the barrel unit 59 of one of the adjacent barrel units 59 is attached to the bolt 61. An annular groove 65 is formed inside. Here, the annular groove 65 As in the first embodiment, a plurality of exhaust holes 66 are provided to connect the exhaust device 68. Therefore, according to this embodiment, the same (1) and (4) can be obtained as in the first embodiment. In addition to the effects of (6), the following effects can also be obtained.-Line · (7) The circular groove 65 connected to the exhaust device 68 in the lens barrel 27 of this projection system is provided on the end face of the lens barrel unit 59 59a. Therefore, when the exhaust device 68 is operated, the gas existing between the end faces 59a of the adjacent lens barrel units 59 can be sucked into the annular groove 65 and then appropriately discharged. Furthermore, since the two end faces are guided, The concave portion of the gas between 59a is an annular groove 65, so the gas between the two end surfaces 59a can be exhausted throughout the entire circumference of the lens barrel unit 59. Therefore, the gas between the two end surfaces 59a can be more effectively exhausted, which is more effective. Inhibit outside air from intruding into the projection chamber 45. In addition, in the lens barrel 27 of this projection system, each lens barrel unit 59 is in contact with the metal processing surface, and it is not necessary to isolate and throw ___21_ paper as opposed to outside air. Standards apply to China National Standard (CNS) A4 (210 X 297 mm) 559892 A7 __ ______ Β7 ___ V. Description of the Invention (θ) As in the case of the shadow-tight chamber 45, an intermediary is installed between the lens barrel units 59. Therefore, the volatiles of the gasket will not reduce the cleanliness in the projection-tight chamber 45, or The relative positional change (offset) between the barrel units 59 is caused by the elastic force of the washer. Therefore, the barrel units 59 can be relatively positioned relatively accurately. <Third Embodiment> Next, use and The third embodiment of the present invention will be described focusing on the different parts of the first embodiment. In this third embodiment, as shown in FIG. 7, a plurality of annular grooves 65a, 65b are provided on the end surface 60a of the gasket 60 as a concentric shape (a part of the exhaust mechanism). The grooves 65a, 65b are provided with a plurality of exhaust holes 66 similarly to the first embodiment. The inner annular groove 65a is connected to the first exhaust device 68a which is a part of the exhaust mechanism or the adsorption mechanism, and the outer annular groove 65b is connected to the first exhaust device 68a different from the first exhaust device 68a. The first exhaust device 68b which is a part of the mechanism or the adsorption mechanism. Each of the exhaust devices 68a and 68b includes independent vacuum pumps 69a and 69b and switching valves 70a and 70b, respectively. Therefore, according to this embodiment, in addition to the same effects (1) to (6) as in the first embodiment, the following effects can be obtained. (8) The projection system lens barrel 27 is attached to the end surface 60a of the spacer 60, and is provided with a plurality of annular grooves 65a, 65b which are concentrically connected to the first and second exhaust devices 68a, 68b. Therefore, the gas between the end surface 59a of each lens barrel unit 59 and the end surface 60a of the spacer 60 can be more effectively discharged through the plurality of annular grooves 65a, 65b. According to this, it can be more surely suppressed. ___22______ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) # 丨 线-559892 A7 ____B7 ___ 5. Description of the invention (^) Outside air penetrates into the projection chamber 45 of the lens barrel 27 of the projection system. "Fourth embodiment" Next, the fourth embodiment of the present invention will be described, focusing on the differences from the third embodiment. In this fourth embodiment, as shown in FIG. 8, a plurality of long grooves 73 a and 73 b are provided as recesses (part of an exhaust mechanism or an adsorption mechanism) on the end surface 60 a of the gasket 60, and three long grooves 73 a each 73b is a double circle arranged at equal intervals and arranged in concentric circles. Further, the long grooves 73a arranged on the inner side and the long grooves 73b arranged on the outer side are arranged so as to be mutually different in phase, and there are any long grooves 73a, 73b on the entire circumference of the spacer 60. With this arrangement, even the discontinuous long grooves 73a, 73b can perform the same function as the annular groove 65 of each embodiment. An exhaust hole 66 is formed in each of the long grooves 73a and 73b so as to be connected to the exhaust device 68. The exhaust device 68 is provided with a switching valve 74 which is a part of the vacuum pump 69 and the exhaust mechanism or the suction mechanism. When the exposure light EL passes through the lens barrel 27 of the projection system, etc., the long grooves 73a, 73b are communicated with the vacuum pump 69, and the long grooves 73a, 73b are evacuated. At this time, the gas existing between the end surface 59a of each lens barrel unit 59 and the end surface 60a of the spacer 60 is sucked into the long grooves 73a, 73b, and is exhausted by the vacuum pump 69, and becomes the lens barrel 27 of the projection system. An isolated state where the projection sealed chamber 45 is isolated from the outside air. On the other hand, when the relative position of each lens barrel unit 59 of the lens barrel 27 of the projection system is adjusted, the switching valve 74 blocks the communication between the long grooves 73a and 73b and the vacuum pump 69 to release the long groove 73a. The vacuum in 73b. _ _23_____ This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
P -•線_ 559892 A7 _ B7___ 五、發明說明（/ ) (請先閱讀背面之注意事項再填寫本頁) 然後，切換閥74，將長槽73a，73b內開於外氣，使之成爲 將外氣供應至該長槽73a，73b內的狀態。此場合，各鏡筒 單元59之端面59a與墊片60之端面60a間之密合狀態解 除，在鬆開前述螺栓61之狀態下，成爲各鏡筒單元59之 端面59a與墊片60之端面60a間，能相對移動之作爲第2 狀態的解除狀態。 因此，根據本實施形態，除了能獲得與第1實施形態 相同之（1)〜(4)及(6)的效果外，亦能獲得下列效果。 -線- (9)此投影系統鏡筒27中，排氣裝置68具有切換閥 74，以切換成將長槽73a，73b內抽成真空之隔離狀態，與 解除該真空狀態，對長槽73a，73b內供應外氣之解除狀態 。因此，在使曝光用光EL通過投影系統鏡筒27內時，係 控制切換閥74，以將長槽73a，73b內與真空泵69加以連 通，據此使投影密閉室45成爲相對外氣隔離的隔離狀態。 另一方面，在產生需相對移動各鏡筒單元59時，係藉由切 換閥74將長槽73a，73b開放於外氣，而能輕易的切換成解 除狀態。據此，在隔離狀態下能保持投影密閉室45之潔淨 ，且在解除狀態下，能使各鏡筒單元59成爲能相對移動之 狀態。此外，在此解除狀態下，能輕易的使各鏡筒單元59 分離。 《變化例》 本發明之!形態，亦能進行如下之變化。 前述第1及第3實施形態中，係於墊片60之端面60a 設置環狀槽65，於該環狀槽65, 65a，65b連接排氣裝置68, _____24_____ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 559892 A7 ___B7 __ 五、發明說明（，） 68a，68b。相對於此，亦可於鏡筒單元59之端面59a設置 環狀槽65, 65a，65b，於該環狀槽65, 65a，65b連接排氣裝 置68, 68a，68b。又，第4實施形態中，係於墊片60之端 面60a設置長槽73a，73b，於該長槽73a，73b連接排氣裝 置68。相對於此，亦可於鏡筒單元59之端面59a設置長 槽73a，73b，於該長槽73a，73b連接排氣裝置68。 採用此種方式時，可使墊片60構成爲單純之圓圏狀。 因此，藉由自各種厚度之墊片中選擇此墊片60加以安裝’ 即能輕易的調整相鄰鏡筒單元59於通其內部之曝光用光 EL光軸方向的相對位置。 第1、第3及第4實施形態中，亦可同時在鏡筒單元 59之端面59a，設置環狀槽65, 65a，65b或長槽73a，73b。 第2實施形態中，於相鄰鏡筒單元59之對向兩側之端 面59a設置環狀槽65亦可。 第1、第3及第4實施形態中，於鏡筒單元59之端面 59a與墊片60之端面60a中之一方設置環狀槽65, 65a，65b 或長槽73a，73b，於鏡筒單元59之端面59a與墊片60之 端面60a中另一方之與環狀槽65, 65a，65b或長槽73a，73b 對應之位置設置排氣孔66，於該排氣孔66連接排氣裝置 68亦可。 第2實施形態中，於相鄰鏡筒單元59之對向一方的端 面59a設置環狀槽65，於另一端面59a之與環狀槽65對 應之位置設置排氣孔66，於該排氣孔66連接排氣裝置68 亦可。此外，於第2實施形態中，採用第3實施形態之環 _____25__— — 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) • -線- 559892 A7 ___B7 ____ 五、發明說明（d) 狀槽65a，65b或第4實施形態之長槽73a，73b亦可。 第1〜第3實施形態中，亦可使各環狀槽65, 65a，65b 內開口之排氣孔66之數量，爲與各實施形態不同之數量， 亦即，1、2或4以上皆可。 第4實施形態中，於長槽73a，73b內設置複數個排氣 孔66，於該排氣孔66連接排氣裝置68亦可。 第3實施形態中，亦可使環狀槽65a，65b之數量與實 施形態所記載之數量不同，亦即，亦可是3以上。 各實施形態中，係將本發明之鏡筒具體化成收容投影 光學系統42之投影系統鏡筒27，但亦可具體化成收容照 明光學系統33之照明系統鏡統25。 各實施形態中，亦可省略晶圓室28，而成爲淸洗投影 系統鏡筒27與晶圓W之間的構成。 各實施形態中，環狀槽65, 65a，65b、長槽73a，73b內 真空之解除不完全亦可，將真空抽成能調整鏡筒單元59間 之相對位置的程度亦可。 各實施形態中，於每一鏡筒單元59間設置排氣裝置 68亦可，或者，以1個排氣裝置68而能變更各鏡筒單元 59間之排氣力的構成亦可。 各實施形態中，作爲投影光學系統42，並不限於折射 式’折反射式或反射式皆可。又，作爲曝光裝置，只要是 至少包含1個光學元件之曝光裝置即可，例如不使用投影 光學系統42，而使光罩與基板密合以將光罩圖案加以曝光 之接觸型曝光裝置，使光罩與基板接近以將光罩圖案加以 __26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) # . i線- 559892 A7 __B7__ 五、發明說明（W) 曝光之近接型曝光裝置，亦皆能同樣的應用本發明。 (請先閱讀背面之注意事項再填寫本頁) 本發明之曝光裝置，並不限於縮小曝光型之曝光裝置 ，亦可是例如等倍曝光型、放大曝光型之曝光裝置。 又，本發明不僅能應用於製造半導體元件等的微元件 ，亦能使用於光曝光裝置、EUV曝光裝置、X射線曝光裝 置、及電子束曝光裝置等所使用之用以製造標線片或光罩 ，自主標線片將電路圖案轉印至玻璃基板或矽晶圓等之曝 光裝置。此處，使用DUV(深紫外線)或VUV(真空紫外線) 光等之曝光裝置一般係使用穿透型標線片，作爲標線片基 板，係使用石英玻璃、摻雜了氟之石英玻璃、螢石、氟化 鎂、或水晶等。又，近接方式之X射線曝光裝置或電子束 曝光裝置等，則係使用穿透型光罩(模板光罩(stencil mask) 、薄膜光罩(membrane mask))，作爲基板係使用砂晶圓等 〇 又，不僅是半導體製造用之曝光裝置，本發明亦可應 用於，包含液晶顯示元件(LCD)等之顯示器之製造用、將 元件圖案轉印至玻璃板的曝光裝置，薄膜磁頭等之製造用 、將元件圖案轉印至陶瓷晶圓等的曝光裝置，以及CCD等 攝影元件製造用的曝光裝置等。 又，在光罩與基板靜止的狀態下將光罩圖案轉印至基 板，依序使基板步進移動之步進重複方式之一次曝光型的 曝光裝置，亦能應用本發明。 又’作爲曝光裝置之光源，亦能使用例如g線（波長 436nm)、i 線(波長 365nm)、Kr2 雷射(波長 146nm)、Ar2( _____27__ 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 559892 A7 ___ B7____ 五、發明說明（β) (請先閱讀背面之注意事項再填寫本頁) 波長126nm)等。此外，亦可使用將DFB半導體雷射或光 纖雷射所發出之紅外線域、或可視域之單一波長雷射光， 以例如摻雜有餌（或餌與鏡雙方）的光纖放大器加以放大， 使用非線形光學結晶加以波長轉換成紫外光之高諧波。 又，各實施形態之曝光裝置，大致上，係例如以下述 方式製造。 --線- 亦即，首先，將構成投影光學系統42之透鏡元件44 及玻璃蓋片43等，收容於前述各實施形態之投影系統鏡筒 27。此外，將由反射鏡34及各透鏡35, 36等光件所構成 之照明光學系統33收容於照明系統鏡筒25。然後，將該 等照明光學系統33及投影光學系統42裝入曝光裝置本體 22，進行光學調整。接著，將由多數機械零件構成之晶圓 載台WST(若係掃描型曝光裝置時，亦包含標線片載台 RST)安裝於曝光裝置本體22並連接線路。然後，在連接 將淸洗氣體供應至曝光用光EL之光程內的淸洗氣體供應 系統50之管線後，再進行綜合調整(電氣調整、動作確認 等）。 此處，構成前述各鏡筒25, 27之各零件，係藉由超音 波洗淨等淸洗掉加工油、金屬物質等雜質後，加以組裝。 又，各曝光裝置之製造，最好是在溫度、濕度及氣壓受到 控制，且潔淨度受到調整之無塵室內進行。 接著，說明在微影製程使用上述曝光裝置之元件之製 造方法之實施形態。 圖9，係顯示元件(1C或LSI等的半導體晶片、液晶面 ___28 _ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 559892 A7 ______B7___ 五、發明說明（4) 板、CCD、薄膜磁頭、微機械等)之製造例之流程圖。 如圖9所示，首先，於步驟S101(設計步驟）中，進行 元件(微元件)之功能、性能設計(例如半導體元件之電路設 計等），並進行用以實現該功能之圖案設計。接著’於步驟 S102(光罩製造步驟）中，製作形成有所設計之電路圖案之 光罩(標線片R等）。另一方面’於步驟S103(基板製造步驟 )，使用矽、玻璃板等之材料製造基板(使用矽材料時爲晶 圓W)。 接著，於步驟S104(基板處理步驟）中，使用在步驟 S101〜步驟S103所準備的光罩與基板，如後述般地，藉 由微影技術等將實際電路形成於晶圓上。然後’於步驟 S105(元件組裝步驟）中，使用在步驟S104所處理之基板進 行元件組裝。此步驟S105中，視需要包含有切割製程、結 合製程、及封裝製程(晶片封裝)等製程。 最後，於步驟S106(檢查步驟）中，進行在步驟S105 所作成的元件之動作確認測試、耐久測試等的檢查。經過 如此之製程後即完成元件而可出貨。 圖10，係顯示半導體元件時，圖6之步驟S104之詳 細流程之一例。圖10中，於步驟S111(氧化步驟)係使晶圓 表面氧化。於步驟S112(CVD步驟)中，係於晶圓表面形成 絕緣膜。於步驟S113(電極形成步驟）中，係藉由蒸鍍於晶 圓上形成電極。於步驟S114(離子植入步驟），係將離子植 入晶圓。以上之各步驟S111〜步驟S114，構成晶圓處理 之各階段的前處理製程，於各階段中視所需之處理來選擇 _______29______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -------- 訂---------線 » 559892 A7 _________B7 五、發明說明（W) 實施。 (請先閱讀背面之注意事項再填寫本頁) 於晶圓製程的各階段中，當結束上述前處理製程，即 以下述方式實施後處理製程。該後處理製程，首先，於步 驟S115(光阻形成步驟）中，將感光劑塗佈於晶圓。接著， 於步驟S116(曝光步驟）中，藉由以上說明之微影系統(曝光 裝置)及曝光方法將光罩(標線片R)之電路圖案轉印於晶圓 W上。其次，於步驟S117(顯像步驟)中，將己曝光之晶圓 加以顯影’於步驟S118(蝕刻步驟）中，藉由蝕刻來除去殘 留有光阻部份之以外部份的露出構件。接著，於步驟 S119(光阻除去步驟)中，去除己蝕刻完成不須之光阻。 藉由重覆此等前處理製程與後處理製程，於晶圓上形 成多重電路圖案。 [發明效果] -線· 若使用以上說明之本實施形態之元件製造方法的話， 於曝光製程(步驟S116)中，能藉由真空紫外帶之曝光用光 EL提昇解像力，高精度的進行曝光量控制。因此能提昇曝 光精度，以良好之良率製造最小線寬爲Ο.ίμιη程度之高積 體度之元件。 ___30 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）P-• Thread _ 559892 A7 _ B7___ V. Description of the invention (/) (Please read the precautions on the back before filling this page) Then, switch the valve 74 to open the long grooves 73a and 73b to the outside air to make it into External air is supplied to the state inside the long grooves 73a, 73b. In this case, the close state between the end surface 59a of each lens barrel unit 59 and the end surface 60a of the spacer 60 is released. When the bolt 61 is loosened, the end surface 59a of each lens barrel unit 59 and the end surface of the spacer 60 are released. Between 60a, it can be moved relative to the released state as the second state. Therefore, according to this embodiment, in addition to the effects (1) to (4) and (6) similar to those of the first embodiment, the following effects can be obtained. -Line- (9) In the lens barrel 27 of this projection system, the exhaust device 68 has a switching valve 74 to switch to an isolated state where the long grooves 73a, 73b are evacuated, and when the vacuum state is released, the long groove 73a , 73b release of external air supply. Therefore, when the exposure light EL is passed through the lens barrel 27 of the projection system, the switching valve 74 is controlled to communicate the inside of the long grooves 73a and 73b with the vacuum pump 69, thereby making the projection sealed chamber 45 relatively isolated from the outside air. Isolated status. On the other hand, when each lens barrel unit 59 needs to be relatively moved, the long grooves 73a and 73b are opened to the outside air by the switching valve 74, and can be easily switched to the released state. Accordingly, the projection sealed chamber 45 can be kept clean in the isolated state, and the lens barrel units 59 can be relatively moved in the released state. In addition, in this released state, each lens barrel unit 59 can be easily separated. <Modifications> The form of the present invention can be modified as follows. In the aforementioned first and third embodiments, an annular groove 65 is provided on the end surface 60a of the gasket 60, and the exhaust groove 68 is connected to the annular grooves 65, 65a, 65b. _____24_____ This paper size applies to the Chinese national standard (CNS ) A4 specification (210 X 297 mm) 559892 A7 ___B7 __ 5. Description of the invention (,) 68a, 68b. In contrast, annular grooves 65, 65a, and 65b may be provided on the end surface 59a of the lens barrel unit 59, and the exhaust grooves 68, 68a, and 68b may be connected to the annular grooves 65, 65a, and 65b. Further, in the fourth embodiment, long grooves 73a and 73b are provided on the end surface 60a of the gasket 60, and an exhaust device 68 is connected to the long grooves 73a and 73b. On the other hand, long grooves 73a, 73b may be provided on the end surface 59a of the lens barrel unit 59, and the long grooves 73a, 73b may be connected to the exhaust device 68. In this way, the gasket 60 can be formed into a simple round shape. Therefore, the relative position of the adjacent lens barrel unit 59 in the direction of the optical axis of the exposure light EL passing through the interior of the lens barrel unit 59 can be easily adjusted by selecting and installing the spacer 60 from among spacers of various thicknesses. In the first, third and fourth embodiments, annular grooves 65, 65a, 65b or long grooves 73a, 73b may be provided on the end surface 59a of the lens barrel unit 59 at the same time. In the second embodiment, the annular grooves 65 may be provided on the end surfaces 59a on the opposite sides of the adjacent lens barrel units 59. In the first, third, and fourth embodiments, annular grooves 65, 65a, 65b or long grooves 73a, 73b are provided on one of the end surface 59a of the lens barrel unit 59 and the end surface 60a of the spacer 60, and the lens barrel unit 59 An exhaust hole 66 is provided at the position corresponding to the annular groove 65, 65a, 65b or the long groove 73a, 73b on the other side of the end face 59a of the 59 and the end face 60a of the gasket 60. The exhaust hole 66 is connected to the exhaust device 68. Yes. In the second embodiment, an annular groove 65 is provided on the opposite end surface 59a of the adjacent lens barrel unit 59, and an exhaust hole 66 is provided at a position corresponding to the annular groove 65 on the other end surface 59a. The hole 66 may be connected to the exhaust device 68. In addition, in the second embodiment, the ring of the third embodiment is adopted. _____25__ — This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling in this (Page) • -Line- 559892 A7 ___B7 ____ 5. Description of the Invention (d) The grooves 65a, 65b or the long grooves 73a, 73b of the fourth embodiment may be used. In the first to third embodiments, the number of the exhaust holes 66 opened in each of the annular grooves 65, 65a, and 65b may be different from that of each embodiment, that is, 1, 2, or 4 or more can. In the fourth embodiment, a plurality of exhaust holes 66 are provided in the long grooves 73a and 73b, and an exhaust device 68 may be connected to the exhaust holes 66. In the third embodiment, the number of the annular grooves 65a, 65b may be different from the number described in the embodiment, that is, it may be three or more. In each embodiment, the lens barrel of the present invention is embodied as a projection system lens barrel 27 that houses the projection optical system 42, but may be embodied as an illumination system lens system 25 that houses the illumination optical system 33. In each embodiment, the wafer chamber 28 may be omitted, and a structure between the lens barrel 27 and the wafer W of the cleaning projection system may be employed. In each embodiment, the vacuum in the annular grooves 65, 65a, 65b and the long grooves 73a, 73b may not be completely released, and the vacuum may be evacuated to such an extent that the relative position between the lens barrel units 59 can be adjusted. In each embodiment, an exhaust device 68 may be provided between each lens barrel unit 59, or a configuration in which the exhaust force between each lens barrel unit 59 may be changed by one exhaust device 68. In each of the embodiments, the projection optical system 42 is not limited to the refractive type or the refracting type or the reflective type. The exposure device may be an exposure device including at least one optical element. For example, a contact-type exposure device that does not use the projection optical system 42 and adheres a photomask to a substrate to expose a photomask pattern. The photomask is close to the substrate to add the photomask pattern. __26 This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) #. I 线- 559892 A7 __B7__ 5. Description of the invention (W) The proximity exposure device for exposure can also be applied to the present invention. (Please read the precautions on the back before filling in this page) The exposure device of the present invention is not limited to the exposure device of the reduced exposure type, but also an exposure device of, for example, a constant exposure type, an enlarged exposure type. In addition, the present invention can be applied not only to the production of micro-elements such as semiconductor elements, but also to the use of light exposure devices, EUV exposure devices, X-ray exposure devices, and electron beam exposure devices to produce reticle or light. A mask, an autonomous reticle that transfers the circuit pattern to an exposure device such as a glass substrate or a silicon wafer. Here, an exposure device using DUV (deep ultraviolet) or VUV (vacuum ultraviolet) light generally uses a transmissive reticle, and as the reticle substrate, quartz glass, fluorine-doped quartz glass, fluorescent Stone, magnesium fluoride, or crystal. In addition, a near-type X-ray exposure apparatus or an electron beam exposure apparatus, etc., use a transmission type mask (stencil mask, membrane mask), and a sand wafer as a substrate system. 〇 It is not only an exposure device for semiconductor manufacturing, but the present invention can also be applied to the manufacture of an display device including a liquid crystal display element (LCD), an exposure device for transferring element patterns to a glass plate, and a thin film magnetic head. Exposure equipment for transferring element patterns to ceramic wafers, etc., and exposure equipment for manufacturing photographic elements such as CCDs. Furthermore, the present invention can also be applied to a single exposure type exposure apparatus in a step-and-repeat mode in which the mask pattern is transferred to the substrate while the mask and the substrate are stationary. Also, as the light source of the exposure device, for example, g-line (wavelength 436nm), i-line (wavelength 365nm), Kr2 laser (wavelength 146nm), Ar2 (_____27__ This paper size applies the Chinese National Standard (CNS) A4 specification ( 210 χ 297 mm) 559892 A7 ___ B7____ 5. Description of the invention (β) (Please read the notes on the back before filling this page) (wavelength 126nm) and so on. In addition, single-wavelength laser light in the infrared or visible range emitted by DFB semiconductor lasers or fiber lasers can also be used, such as a fiber amplifier doped with a bait (or both bait and mirror) to amplify, using a non-linear Optical crystallization adds wavelengths to high harmonics of ultraviolet light. The exposure apparatus of each embodiment is roughly manufactured, for example, in the following manner. --Line- That is, first, the lens element 44 and the cover glass 43 constituting the projection optical system 42 are housed in the projection system lens barrel 27 of each of the foregoing embodiments. In addition, an illumination optical system 33 including a reflecting mirror 34 and optical elements such as lenses 35 and 36 is housed in an illumination system lens barrel 25. Then, the illumination optical system 33 and the projection optical system 42 are incorporated into the exposure apparatus body 22, and optical adjustment is performed. Next, a wafer stage WST (including a reticle stage RST if it is a scanning type exposure apparatus) composed of a large number of mechanical parts is mounted on the exposure apparatus body 22 and connected to the wiring. Then, after connecting the pipeline that supplies the scrubbing gas to the scrubbing gas supply system 50 within the optical path of the exposure light EL, comprehensive adjustments (electrical adjustment, operation confirmation, etc.) are performed. Here, the components constituting each of the lens barrels 25 and 27 are assembled by washing off impurities such as processing oil and metal substances by ultrasonic cleaning or the like. The manufacturing of each exposure device is preferably performed in a clean room in which the temperature, humidity, and air pressure are controlled and the cleanliness is adjusted. Next, an embodiment of a method for manufacturing a device using the above-mentioned exposure device in a lithography process will be described. Figure 9 is a display element (1C or LSI semiconductor wafer, liquid crystal surface ___28 _ This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 559892 A7 ______B7___ V. Description of the invention (4) board , CCD, thin-film magnetic head, micro-machine, etc.). As shown in FIG. 9, first, in step S101 (design step), the function and performance design of the device (micro-device) (such as the circuit design of a semiconductor device) is performed, and the pattern design to realize the function is performed. Next, in step S102 (photomask manufacturing step), a photomask (reticle R, etc.) is formed to form a designed circuit pattern. On the other hand, in step S103 (substrate manufacturing step), a substrate (such as a wafer W when a silicon material is used) is manufactured using a material such as silicon or a glass plate. Next, in step S104 (substrate processing step), using the photomask and substrate prepared in steps S101 to S103, as described later, an actual circuit is formed on the wafer by lithography technology or the like. Then, in step S105 (component assembly step), component assembly is performed using the substrate processed in step S104. In this step S105, processes such as a dicing process, a bonding process, and a packaging process (chip packaging) are included as necessary. Finally, in step S106 (inspection step), inspections such as the operation confirmation test and the endurance test of the element made in step S105 are performed. After such a process, the components are completed and can be shipped. Fig. 10 is an example of the detailed flow of step S104 in Fig. 6 when the semiconductor element is shown. In FIG. 10, the wafer surface is oxidized in step S111 (oxidation step). In step S112 (CVD step), an insulating film is formed on the surface of the wafer. In step S113 (electrode formation step), an electrode is formed on a crystal circle by evaporation. In step S114 (ion implantation step), ions are implanted into the wafer. Each of the above steps S111 to S114 constitutes a pre-processing process of each stage of the wafer processing. In each stage, depending on the required processing, _______29______ is selected. This paper size applies the Chinese National Standard (CNS) A4 (210 X 297) (%) (Please read the precautions on the back before filling out this page) -------- Order --------- Line »559892 A7 _________B7 5. Description of the Invention (W) Implementation. (Please read the precautions on the back before filling out this page.) At each stage of the wafer process, when the above pre-processing process is completed, the post-processing process is implemented in the following manner. In this post-processing process, first, in step S115 (photoresist formation step), a photosensitive agent is applied to the wafer. Next, in step S116 (exposure step), the circuit pattern of the photomask (reticle R) is transferred onto the wafer W by the lithography system (exposure device) and the exposure method described above. Next, in step S117 (developing step), the exposed wafer is developed 'and in step S118 (etching step), the exposed members other than the photoresist remaining portion are removed by etching. Next, in step S119 (photoresist removal step), the photoresist that is unnecessary for the completion of the etching is removed. By repeating these pre-processing and post-processing processes, multiple circuit patterns are formed on the wafer. [Effects of the Invention]-Line · If the device manufacturing method of this embodiment described above is used, in the exposure process (step S116), the resolution can be improved by the exposure light EL of the vacuum ultraviolet band, and the exposure can be performed with high accuracy. control. Therefore, it is possible to improve the accuracy of exposure, and to manufacture a high-integrity component with a minimum line width of 0. Ιμιη at a good yield. ___30 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)