JP2000200745A - Projection aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent gas and fine particles from being stuck to a projection optical system and from contaminating the system at the time of irradiating a substrate to which sensitizer is applied with the exposure light of high energy, by providing a chamber through which exposure light is transmitted and which stores the sensitizer application face of the substrate. SOLUTION: A chamber 15 is fitted so that a sensitizer application face 18 being the upper face of a wafer W to which resist K is applied is stored. The chamber 15 is formed of peripheral wall parts 16 and the top wall part 17 of a circle form in plan view which is arranged opposite to the wafer W. The top wall part 17 is formed of a nitric material such as quartz through which measurement light and exposure light B, which are used in a focus detection system, are transmitted. Since the chamber 15 stores the sensitizer application face 18 of the wafer W with such constitution, gas and fine particles, which are generated from the wafer W when exposure light B is made incident are stuck to a peripheral component and gives adverse influence, can be sealed into the chamber 15. Thus, gas and fine particles can be prevented from sticking to a projection optical system 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for projecting and transferring a mask pattern onto a substrate such as a semiconductor wafer or a glass plate, and more particularly, to a mask pattern applied to a substrate having a surface coated with a photosensitive agent. The present invention relates to a projection exposure apparatus for exposing a light.

[0002]

2. Description of the Related Art Generally, when a semiconductor element, a liquid crystal display element, and the like are manufactured by a photolithography process, an image of a pattern formed on a photomask or a reticle (hereinafter, referred to as a mask) is projected through a projection optical system. 2. Description of the Related Art A projection exposure apparatus that performs a projection / transfer process on a substrate such as a semiconductor wafer or a glass plate coated with a photosensitive agent such as a photoresist is used.

[0003] By the way, the demand for large integration of semiconductor elements is increasing year by year, and accordingly, the line width of circuit patterns is becoming smaller. In order to expose a circuit pattern having a smaller line width via a projection optical system, it is known to shorten the wavelength of light used for exposure. Therefore, in recent years, KrF excimer laser (248 nm) and ArF excimer laser (1
93 nm), an F ₂ laser (157 nm), and the like have been used in many cases.

[0004]

However, the conventional projection exposure apparatus as described above has the following problems. Since light having a short wavelength has high energy as described above, when irradiated on the wafer, fine particles are scattered from the wafer itself, so-called ablation occurs, and the resist is separated and vaporized (evaporated). And spread. Further, organic substances and the like contained in the air cause a photochemical reaction by high-energy light to generate minute impurities.

[0005] Such a gas or fine particles are composed of surrounding components,
For example, if it adheres to a projection optical system arranged near the wafer, the light amount at the time of exposure becomes smaller than a set value. There is a possibility that the accuracy may be adversely affected.

The present invention has been made in view of the above points, and even when a substrate coated with a photosensitive agent is irradiated with high-energy exposure light, gas or fine particles adhere to a projection optical system or the like. It is an object of the present invention to provide a projection exposure apparatus which prevents contamination due to the above.

[0007]

In order to achieve the above object, the present invention employs the following structure corresponding to FIGS. 1 to 11 showing an embodiment. The projection exposure apparatus according to the present invention is a projection exposure apparatus (1) for projecting and exposing a pattern of a mask (M) on a substrate (W) coated with a photosensitive agent (K) by exposure light (B). And a chamber (15, 15a) accommodating at least the photosensitive agent-coated surface (18) of the substrate (W).

Therefore, in the projection exposure apparatus of the present invention, when the pattern of the mask (M) is projected and exposed on the photosensitive agent coated surface (18) of the substrate (W) by the exposure light (B) of high energy, ) Or the photosensitive agent (K), even if gas or fine particles are generated, these gases or fine particles are transferred to the chamber (15, 15).
It can be separated from surrounding components (9) by being enclosed in a). Here, the chambers (15, 15)
Since a) transmits the exposure light (B), it does not hinder the exposure processing itself.

Further, the projection exposure apparatus of the present invention projects a pattern of a mask (M) on a substrate (W) coated with a photosensitive agent (K) by exposure light (B) via a projection optical system (9). In a projection exposure apparatus (1) for exposing, a suction device (2) for suctioning air on a photosensitive agent application surface (18) side of a substrate (W).
(3) is provided.

Therefore, in the projection exposure apparatus of the present invention, when the pattern of the mask (M) is projected and exposed to the photosensitive agent-coated surface (18) of the substrate (W) by high-energy exposure light, the substrate (W) or the photosensitive material is exposed. Even if gas or fine particles are generated from the agent (K), the suction device (23) sucks these gases and fine particles together with the air, so that it can be prevented from adhering to the surrounding components (9).

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of a projection exposure apparatus according to the present invention will be described with reference to FIGS. Here, for example, an example in which a circuit pattern formed on a mask is transferred to a wafer using a step-and-repeat projection exposure apparatus (stepper) will be described.

FIG. 3 is a schematic configuration diagram of the projection exposure apparatus 1. The projection exposure apparatus 1 is for projecting and transferring a pattern (for example, a semiconductor element pattern) formed on a mask M onto a substantially circular wafer (substrate) W coated with a photosensitive agent. Illumination optical system 7, mask stage 8, projection optical system 9, wafer stage (substrate stage) 1
0 and a focus detection system 11.

The light source unit 6 emits excimer laser light using ArF as a medium as exposure light B.
Exposure light B emitted from the light source unit 6 is reflected by the reflection mirror 4 and enters the illumination optical system 7.

The illumination optical system 7 includes a relay lens (not shown), an optical integrator (such as a fly-eye lens) for equalizing the exposure light B, an input lens for inputting the exposure light B to the optical integrator, and an optical integrator. The emitted exposure light B is used as a mask M
It has a relay lens, condenser lens, etc. for focusing on the top. Exposure light B emitted from illumination optical system 7
Is reflected by the reflection mirror 5 and is incident on a mask M having a pattern to be exposed on the wafer W and held on the mask stage 8.

The projection optical system 9 forms an image of a pattern existing in the illumination area of the mask M on the wafer W. The wafer stage 10 holds the wafer W and is movable in directions orthogonal to each other (three-dimensional directions of X, Y, and Z). This wafer stage 10
A movable mirror 10a is provided above. Moving mirror 10a
A laser beam 12 is emitted from a laser interferometer (not shown), which is a position measuring device, and the distance between the movable mirror 10a and the laser interferometer based on the interference between the reflected light and the incident light, that is, the wafer stage The configuration is such that the position of 10 (and thus the wafer W) is detected. The wafer stage 10 is provided with a drive mechanism (not shown) for driving the wafer stage 10 such as a linear motor.

The focus detection system 11 optically detects the height position (position in the Z direction) of the wafer W, and includes a light projecting system 13 for obliquely entering measurement light into the wafer W, and a wafer W And a light receiving system 14 for receiving the measurement light reflected on the surface of the light emitting device.

On the other hand, near the projection exposure apparatus 1, a wafer transfer apparatus (not shown) for transferring the wafer W between the projection exposure apparatus 1 and a coater / developer (not shown) is provided. The projection exposure apparatus 1 is provided with a wafer loader (not shown) that transfers the wafer W to and from the wafer transfer device and transfers the wafer W to and from the wafer stage 10. The wafer transfer device and the wafer loader have the same configurations as those in the related art.

In the vicinity of the wafer transfer device,
A chamber transfer device (not shown) for attaching the chamber 15 to the wafer W carried into the projection exposure apparatus 1 under reduced pressure and removing the chamber 15 from the wafer W carried out of the projection exposure apparatus 1 is separated from the projection exposure apparatus 1. It is arranged.

As shown in FIG. 1, the chamber 15 is mounted so as to house an upper surface (photosensitive agent coated surface) 18 of a wafer W coated with a resist (photosensitive agent) K. Also,
As shown in FIG. 2, the chamber 15 includes a peripheral wall portion 16 provided along the outer periphery of the wafer W, and a top wall portion provided above the edge of the peripheral wall portion 16 and opposed to the wafer W and having a circular top view. 17.

An O-ring or the like is provided on the lower edge of the peripheral wall portion 16.
Sealing means for keeping the inside of the chamber 15 airtight is provided. Further, the thickness of the peripheral wall portion 16 is set so small that the transfer of the wafer W by the wafer transfer device and the wafer loader is not hindered regardless of the presence or absence of the chamber 15. On the other hand, the top wall portion 17 is formed of a glass material such as quartz that can transmit the measurement light and the exposure light B used in the focus detection system 11.

A procedure for projecting and exposing the pattern of the mask M on the wafer W using the projection exposure apparatus having the above configuration will be described. First, the chamber transfer device mounts the chamber 15 on a predetermined position of the wafer W on the wafer W transferred from the coater / developer to the projection exposure apparatus 1 by the wafer transfer device.

Next, on the projection exposure apparatus 1 side, the wafer loader receives the wafer W with the chamber 15 attached thereto from the wafer transfer device. The delivery here is performed under the atmospheric pressure. However, since the inside of the chamber 15 has a negative pressure with respect to the outside air, the chamber 15 is pressed against the wafer W. In addition, since a sealing means such as an O-ring is interposed between the chamber 15 and the wafer W, the chamber 15
Is stored in a closed state.

After the wafer loader conveys the wafer W to the wafer stage 10, the wafer stage 10 moves so as to position the wafer W at a predetermined position with respect to the projection optical system 9. When the wafer stage 10 is moved, a laser interferometer (not shown)
a, and measures the distance based on the interference between the reflected light and the incident light.
, That is, the position of the wafer W is accurately detected.

Similarly, the focus detection system 11 detects the height position (the position in the Z direction) of the wafer W. That is, the measurement light emitted from the light projecting system 13 enters the surface of the wafer W through the top wall portion 17 of the chamber 15 as shown in FIG. 1
4 is incident. Then, based on the positional relationship between the reflected measurement light and the received light, the wafer stage 10 is moved in the height direction (so that the surface of the wafer W substantially matches the position of the image of the pattern of the mask M by the projection optical system 9). (Z direction).

When the positioning of the wafer W is completed, the exposure light B is emitted from the light source unit 6. The emitted exposure light B is reflected by the reflection mirror 4, enters the illumination optical system 7, and has uniform illuminance. The exposure light B emitted from the illumination optical system 7 is reflected by the reflection mirror 5 and then enters the mask M to illuminate the mask M. The exposure light B transmitted through the mask M is transmitted to the projection optical system 9 and the top wall 17 of the chamber 15.
Then, the light is incident on the wafer W through the substrate W to expose the resist K on the wafer W to form an image of the pattern of the mask M on the wafer W.

At this time, the incidence of the exposure light B causes ablation on the wafer W or the upper surface 1 of the wafer W.
8, gas and fine particles of the resist K are generated. However, since the upper surface 18 is sealed in the chamber 15, these gases and fine particles do not leak to the outside.
Sealed inside.

When the exposure processing is completed, the wafer W is unloaded from the wafer stage 10 by the wafer loader with the chamber 15 attached. Then, the wafer W is delivered to the wafer transfer device, and the projection exposure apparatus 1
Is transferred to the coater / developer. At this time, the chamber transfer device removes the chamber 15 from the wafer W before the wafer W reaches the coater / developer.

In the projection exposure apparatus of this embodiment, since the photosensitive agent application surface 18 of the wafer W is housed in the chamber 15, the exposure light B is generated from the wafer W when the exposure light B enters, and the surrounding components, for example, Gases and fine particles that adhere to the projection optical system 9 and adversely affect the projection optical system 9 are removed from the chamber 1.
5 can be sealed. Therefore, it is possible to prevent a situation in which these gases and fine particles adhere to the projection optical system 9 and reduce the exposure accuracy.

In the projection exposure apparatus according to the present embodiment,
Since the chamber 15 is mounted on the wafer under reduced pressure in advance, the chamber 15 is not used during exposure processing under atmospheric pressure.
It is not necessary to separately provide a unit for bringing the wafer W into close contact with the wafer W, which leads to a reduction in cost. Furthermore, since the initial volatile components contained in the resist K and the like can be removed by once exposing the wafer W under reduced pressure, it is possible to contribute to prevention of scattering of contaminants.

In the projection exposure apparatus according to the present embodiment,
Since the chamber 15 is directly mounted on the wafer W, the chamber transfer device is not provided in the projection exposure apparatus 1,
It is possible to dispose it separately from the projection exposure apparatus 1,
The projection exposure apparatus 1 can be prevented from becoming unnecessarily large, and the apparatus can be downsized.

Further, in the projection exposure apparatus according to the present embodiment, the thickness of the chamber 15 is so thin that the transfer function of the wafer transfer device and the wafer loader is not hindered. In addition, a conventionally installed wafer loader can be used as it is without newly providing a wafer loader corresponding to the chamber 15.

In the projection exposure apparatus of the present embodiment,
Although the chamber transfer device is configured to simply attach the chamber 15 to the wafer W under reduced pressure, it may be configured to reduce the pressure in an atmosphere of an optically inert gas such as nitrogen or He and attach the chamber 15 to the wafer W. . In this case, the distance that the exposure light B passes through the air can be shortened by bringing the projection optical system 9 and the chamber 15 closer to each other, so that generation of ozone, which is a harmful gas, can be suppressed.

Light having a wavelength of about 200 nm or less, such as laser light from an excimer laser using ArF as a medium, contains a wavelength region (spectral component) having an absorption characteristic for oxygen, Absorption by oxygen is large. However, as described above, by setting the inside of the chamber 15 to be an optically inert atmosphere, the amount of energy (energy amount) of the exposure light B may be reduced because oxygen does not exist in the chamber 15. Can also be prevented.

In the projection exposure apparatus of the present embodiment, when there is a possibility that the exposure area on the wafer W may be narrowed by the chamber 15, as shown by a two-dot chain line in FIG. By configuring the portion 16 to gradually increase in diameter as going upward starting from the lower edge,
A predetermined exposure area can be maintained.

Further, the chamber transfer device is a projection exposure device 1
However, the present invention is not limited to this, and may be, for example, installed inside the projection exposure apparatus 1.

FIGS. 4 and 5 are views showing a second embodiment of the projection exposure apparatus of the present invention. In these figures, the same elements as those of the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof will be omitted. (Note that, in FIG. 5, the display of the light projecting system 13 and the light receiving system 14 of the focus detection system 11 is omitted.) The difference between the second embodiment and the first embodiment is that: ,
Exhaust device for exhausting chamber 15 and chamber 15
That is, a replacement gas supply device for supplying a replacement gas therein is provided.

That is, as shown in FIGS. 4 and 5,
The projection exposure apparatus 1 includes an exhaust device 19 such as a vacuum pump.
Are connected to the chamber 15. The exhaust device 19 is configured to exhaust the inside of the chamber 15 by suctioning the inside of the chamber 15 under a negative pressure. Further, the chamber 15 has a replacement gas supply device 20 for supplying an optically inert replacement gas such as nitrogen or He into the chamber 15.
Is connected.

The exhaust device 19 and the replacement gas supply device 20 perform exhaust and gas supply at such an output that the gas in the chamber 15 moves in a laminar flow state and no air fluctuation occurs in the chamber 15. Have been driven to Other configurations are the same as those of the first embodiment.

In the projection exposure apparatus of the present embodiment, the same operation and effect as those of the first embodiment can be obtained, and the air in the chamber 15 can be optically replaced with an inert gas. In addition, gas and fine particles in the chamber 15 generated by the incidence of the exposure light B can be exhausted and removed. Therefore, the state in which the inside of the chamber 15 is always replaced with the inert gas can be maintained, and these gases and fine particles adhere to the top wall portion 17 of the chamber 15 to adversely affect the exposure accuracy, or the exposure light B It is possible to prevent a situation in which a photochemical reaction is caused to lower the exposure energy of the exposure light B. Also, the chamber 15
Since the oxygen inside is also exhausted, it is possible to prevent the light amount (energy amount) of the exposure light B from decreasing.

In the projection exposure apparatus according to the present embodiment,
The replacement gas supply device 20 is not always necessary, and only the exhaust device 19 may be connected to the chamber 15. Also in this case, the gas and the fine particles generated in the chamber 15 by the incidence of the exposure light B can be removed by exhausting the gas and the fine particles.
Can be prevented from adversely affecting the exposure accuracy and causing a photochemical reaction with the exposure light B to reduce the amount of exposure energy of the exposure light B.

FIGS. 6 and 7 show a projection exposure apparatus according to a third embodiment of the present invention. In these figures, the same elements as those of the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof will be omitted. The difference between the third embodiment and the first embodiment is that the chamber is attached to the wafer stage.

That is, as shown in FIG. 6, a chamber 15a is attached to the wafer stage 10.
As shown in FIG. 7, the chamber 15a is attached so as to house the entire wafer W including the upper surface 18 coated with the resist K. Further, the chamber 15a has a peripheral wall portion 16a having a diameter spaced at a substantially constant interval on the outer periphery of the wafer W, and a top wall portion provided above the edge of the peripheral wall portion 16a and arranged in a circular shape in a plan view and opposed to the wafer W. 17a.

In the projection exposure apparatus of this embodiment,
The chamber 15 is placed on the wafer stage 10 holding the wafer W.
a, and after the exposure process is completed,
A chamber transfer device (not shown) for removing the chamber 15 a is installed near the wafer stage 10 in the projection exposure apparatus 1. Other configurations are the same as those of the first embodiment.

In the projection exposure apparatus of the present embodiment, the same operation and effect as those of the first embodiment can be obtained. In addition, since the accommodation space in the chamber 15a is large, the exposure light B The concentration of the generated gas or fine particles in the chamber 15a can be kept low. Further, since the chamber 15a is not in direct contact with the wafer W, it is possible to prevent the wafer W from being damaged when the chamber 15a is transferred.

FIG. 8 is a view showing a fourth embodiment of the projection exposure apparatus of the present invention. The fourth embodiment is different from the third embodiment shown in FIGS. 6 and 7 in that an exhaust device 19 for exhausting the inside of the chamber 15a by suctioning the inside of the chamber 15a with a negative pressure is provided. Gas supply device 20 for supplying an optically inert replacement gas to
That is, Other configurations are the same as those of the third embodiment, and therefore, the same components are denoted by the same reference numerals and description thereof will be omitted.

In the projection exposure apparatus according to the present embodiment, the same operation and effect as those of the third embodiment can be obtained. In addition, gas and fine particles in the chamber 15a generated by the incidence of the exposure light B are removed. Can be evacuated and removed. For this reason, these gases and fine particles adhere to the top wall portion 17a of the chamber 15a to adversely affect the exposure accuracy, or cause a photochemical reaction with the exposure light B to lower the exposure energy amount of the exposure light B beforehand. Can be prevented.

In this embodiment, as in the second embodiment, the replacement gas supply device 20 is not always necessary, and only the exhaust device 19 may be connected to the chamber 15a. Even in this case, it is possible to suppress a situation in which the gas and the fine particles adhere to the top wall portion 17a of the chamber 15a to adversely affect the exposure accuracy, or cause a photochemical reaction with the exposure light B to lower the exposure energy amount of the exposure light B. can do.

FIGS. 9 and 10 show a fifth embodiment of the projection exposure apparatus of the present invention. In these figures, the same elements as those of the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof will be omitted. The difference between the fifth embodiment and the first embodiment is that a suction device 23 for sucking air on the upper surface 18 side of the wafer W is provided.

The suction device 23 includes a negative pressure suction source 24 such as a vacuum pump and a chamber 15 connected to the negative pressure suction source 24.
b. Like the exhaust device 19, the negative pressure suction source 24 sucks air at such an output that the air in the chamber 15b moves in a laminar flow state and no air fluctuation occurs in the chamber 15b. .

The chamber 15b is integrally supported at the lower end of the projection optical system (projection lens) 9 with a small gap between the chamber 15b and the wafer W. The minute gap is determined by taking into account the amount of shake when the wafer stage 10 moves up and down.
The distance is set such that 5b and the wafer W are always separated from each other.

As shown in FIG. 10, the chamber 15b
Circumferential wall portion 16 having a circular cross section whose upper edge is supported by projection optical system 9
b, a disc-shaped bottom wall 32b provided on the lower edge of the peripheral wall 16b so as to face the wafer W, and disposed above the bottom wall 32b and between the bottom wall 32b. And an inner wall portion 22b that forms the suction space 21. And
The negative pressure suction source 24 draws air in a suction tube 25 so as to suck air in a suction space 21 provided near the optical path of the exposure light B.
Connected through.

The inner wall portion 22b is provided with an extending portion 26 extending gradually downward as it approaches the exposure light B. Then, the extension portion 26 and the bottom wall portion 32
b, the through-holes 27 having a diameter larger than the passing range of the exposure light B,
28 are formed so as not to affect the exposure. Further, the diameter of the through hole 28 formed in the bottom wall portion 32 b is larger than that of the through hole 27. That is, the extension portion 26 extends so as to project toward the exposure light B with respect to the bottom wall portion 32b. Also, the through holes 27 and 2
Due to the presence of 8, a scattered substance suction port 29 is formed in the suction space 21 so as to surround the periphery of the exposure light B. Other configurations are the same as those of the first embodiment.

The peripheral wall portion 16b is formed of a glass material such as quartz through which measurement light used in the focus detection system 11 can pass.

In the projection exposure apparatus 1 having the above structure, when the negative pressure suction source 24 is operated, a flow of air for sucking the air on the upper surface 18 side of the wafer W from the scattered substance suction port 29 into the suction space 21 is formed. You. Then, scattered substances such as gas and fine particles generated on the upper surface 18 side of the wafer W by the incidence of the exposure light B are sucked and removed from the scattered substance suction port 29 into the suction space 21 along the flow.

In the projection exposure apparatus of this embodiment, as in the case of the first embodiment, the scattered objects generated by the incidence of the exposure light B can be sucked and removed. It is possible to prevent a situation in which the exposure accuracy is deteriorated due to adhesion to the substrate. Further, since the scattered substance suction port 29 is opened in the vicinity of the exposure light B so as to surround the periphery of the exposure light B, the scattered substance can be efficiently sucked and prevented without hindering the exposure processing. Can be removed.

In the projection exposure apparatus of the present embodiment,
Since the chamber 15b is supported by the projection optical system 9,
Once the chamber 15b is mounted on the projection optical system 9, there is no need to mount the chamber on the wafer W or wafer stage 10 for each exposure. Therefore, it is possible to reduce the process time required for the chamber transfer for each wafer W,
The throughput can be improved, and it is not necessary to provide a chamber transfer mechanism, so that the size and cost of the apparatus can be reduced.

In the projection exposure apparatus of the present embodiment,
The extending portion 26 projects more toward the exposure light B than the bottom wall portion 32b,
In addition, since it extends so as to gradually face downward as approaching the exposure light B, it is generated by the incidence of the exposure light B,
The scattered substance rising toward the projection optical system 9 is easily guided toward the scattered substance suction port 29, and the scattered substance can be effectively removed.

In the present embodiment, the suction space 21 is constituted by the chamber 15b.
If the scattering substance suction port 29 is provided in the vicinity of the exposure light B, the suction space 21 may be provided in another member supported by members other than the projection optical system 9. .

FIG. 11 is a view showing a sixth embodiment of the projection exposure apparatus of the present invention. In this figure, the same components as those of the fifth embodiment shown in FIGS. 9 and 10 are denoted by the same reference numerals, and description thereof will be omitted.
(Note that in FIG. 11, the light projecting system 1 of the focus detecting
3. The display of the light receiving system 14 is omitted. The difference between the sixth embodiment and the fifth embodiment is that a gas delivery device 30 for delivering gas from the projection optical system 9 side to the upper surface 18 of the wafer W is provided. .

As shown in FIG. 11, the gas delivery device 30
Supplies a gas supply path 31 provided on the outer peripheral surface of the lower end of the lens barrel that houses the projection optical system 9, and supplies an optically inert gas such as nitrogen or He via the gas supply path 31. And a gas supply source (not shown). Gas supply path 31
Indicates that the exposure light B gradually increases from the top to the bottom.
It is arranged to be inclined so as to approach. Other configurations are the same as those in the fifth embodiment.

In the projection exposure apparatus according to the present embodiment, the same operation and effect as those of the fifth embodiment are obtained, and the air between the projection optical system 9 and the wafer W is removed. Since the gas can be replaced with an inert gas, it is possible to prevent the light amount (energy amount) of the exposure light B from being reduced by oxygen.

In the projection exposure apparatus of the present embodiment,
Since the flow of the inert gas sent out from the gas supply path 31 to the wafer W becomes downflow, the fluctuation due to the concentration of the inert gas can be reduced, and the gas concentration is also effective. Note that the suction device 23 is not necessarily required, and a configuration in which only the gas delivery device 30 is provided may be employed.

In the above embodiment, the chamber 15b supported by the lower end of the projection optical system 9 is arranged with a small gap from the wafer W.
A configuration may be adopted in which at least the wafer W is hermetically accommodated in 5b. In this case, the movement of the wafer W is
This is performed by a drive source provided outside of b. For example, a drive mechanism (a drive mechanism that accommodates the wafer W in the chamber 15 and a wafer holder that holds the wafer W and has a magnet on the back surface, and that moves the magnet to the outside of the chamber 15b facing the magnet) A magnetic coil or the like may be provided.

Further, in the above embodiment, the description has been made using nitrogen or He gas as the inert gas. However, other gases such as hydrogen, neon, argon, krypton, xenon, and radon may be used. May be used. Preferably, dry air that is chemically clean (e.g., air from which substances that cause lens fogging, such as ammonium ions floating in a clean room, or humidity of 5%) is used.
% Of air).

When an inert gas is supplied into the chamber, the pressure in the chamber may slightly change to affect the refractive index of the exposure light B. In this case, the pressure in the chamber is reduced. It is also possible to provide a detecting means for detecting, and to feedback the detection result of the detecting means to correct the pressure in the chamber or to correct the pattern magnification.

The substrates include not only semiconductor wafers for semiconductor devices, but also glass substrates for liquid crystal display devices, ceramic wafers for thin-film magnetic heads, and the like.
Alternatively, an original mask (synthetic quartz, silicon wafer) of a mask or a reticle used in an exposure apparatus is applied.

The projection exposure apparatus 1 exposes the pattern of the mask M while keeping the mask M and the wafer W stationary.
Step and move the wafer W step by step
In a repeat type projection exposure apparatus (stepper), a step-and-scan type scanning projection exposure apparatus (scanning stepper) that exposes a pattern of the mask M by synchronously moving a mask (reticle) M and a glass substrate.
Can also be applied.

The types of the projection exposure apparatus 1 include not only the above-described semiconductor manufacturing apparatus, but also an exposure apparatus for manufacturing a liquid crystal display device, an exposure apparatus for manufacturing a thin-film magnetic head, an image sensor (CCD) or a mask, a reticle, and the like. It can be widely applied to devices and the like.

The light source of the illumination optical system 7 is KrF
An excimer laser (248 nm), an ArF excimer laser (193 nm), an F ₂ laser (157 nm), X-rays, or the like can be used. Alternatively, a high frequency such as a YAG laser or a semiconductor laser may be used.

The magnification of the projection optical system 9 may be any of a reduction system, an equal magnification and an enlargement system. Further, as the projection optical system 9, when using a far ultraviolet rays such as an excimer laser using a material which transmits far ultraviolet rays such as quartz and fluorite as glass material, a catadioptric or refractive system when using a F ₂ laser Use an optical system.

When a linear motor is used for the wafer stage 10 and the mask stage 8, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force may be used. Each of the stages 8 and 10 may be of a type that moves along a guide, or may be a guideless type that does not have a guide.

The reaction force generated by the movement of the wafer stage 10 may be mechanically released to the floor (ground) using a frame member. The reaction force generated by the movement of the mask stage 8 may be mechanically released to the floor (ground) using a frame member.

The illumination optical system 7 and the projection optical system 9 each composed of a plurality of optical elements are incorporated into the exposure apparatus main body to perform optical adjustment, and the mask stage 8 and the wafer stage 10 composed of many mechanical parts are exposed. The projection exposure apparatus 1 according to the present embodiment can be manufactured by attaching wires and pipes to the apparatus main body, and performing overall adjustment (electrical adjustment, operation confirmation, and the like). The production of the projection exposure apparatus 1 is desirably performed in a clean room in which temperature, cleanliness, and the like are controlled.

For devices such as semiconductor devices and liquid crystal display elements, there are steps of designing the function and performance of each device, steps of manufacturing a mask M based on the design steps, steps of manufacturing a wafer W, a glass substrate, and the like. It is manufactured through the steps of exposing the pattern of the mask M on the wafer W and the glass substrate, assembling each device, and inspecting, etc. by the projection exposure apparatus 1 of the above-described embodiment.

[0075]

As described above, in the projection exposure apparatus according to the first aspect, the chamber transmits the exposure light, and at least accommodates the photosensitive agent coated surface of the substrate. Thereby, in this projection exposure apparatus, scattered substances such as gas and fine particles, which are generated when high-energy exposure light is incident and adhere to the projection optical system and adversely affect the projection optical system, are generated. Since the inside of the chamber can be sealed, there is an excellent effect that it is possible to prevent a situation in which these gases and fine particles adhere to the projection optical system and lower the exposure accuracy.

The projection exposure apparatus according to claim 2 has a configuration in which the chamber is mounted on the substrate. As a result, the projection exposure apparatus can be disposed separately from the projection exposure apparatus without providing a transfer device for the chamber inside, thereby preventing the projection exposure apparatus from becoming unnecessarily large. Thus, the effect that the size of the apparatus can be reduced is obtained. In addition, by reducing the thickness of the chamber, when installing the chamber transfer device, the substrate transfer device and the substrate loader can be used as they are without being newly installed so as to correspond to the chamber. The effect that can be obtained is also obtained.

The projection exposure apparatus according to the third aspect is configured such that the chamber is mounted on a substrate stage for holding a substrate. Accordingly, in this projection exposure apparatus, the storage space in the chamber is large, so that the concentration of gas and fine particles in the chamber caused by the incidence of exposure light can be kept low, and the chamber and the substrate are in direct contact. Therefore, it is possible to prevent the substrate from being damaged during the transfer of the chamber.

In the projection exposure apparatus according to the fourth aspect, the exhaust device exhausts the inside of the chamber. This allows the projection exposure apparatus to exhaust and remove gases and particles in the chamber generated by the exposure light, and these gases and particles adhere to the chamber and adversely affect exposure accuracy. The effect of reducing the amount of exposure energy of the exposure light by causing a photochemical reaction with the exposure light can be obtained.

In a projection exposure apparatus according to a fifth aspect, the replacement gas supply device supplies a replacement gas into the chamber. Thus, in this projection exposure apparatus, the gas and fine particles in the chamber generated by the incidence of the exposure light can be replaced with the inert gas, so that these gases and fine particles adhere to the chamber and adversely affect the exposure accuracy, It is possible to prevent a situation in which a photochemical reaction occurs with the exposure light and the amount of exposure energy of the exposure light is reduced, and
Since oxygen in the chamber is also eliminated, the effect of preventing the energy amount of the exposure light from being reduced can be obtained.

The projection exposure apparatus according to claim 6 is configured such that the suction device suctions air on the photosensitive agent application surface side of the substrate. Thus, in this projection exposure apparatus, scattered matters such as gas and fine particles generated by the incidence of the exposure light of light energy can be sucked and removed, and these scattered matters adhere to surrounding components, for example, a projection optical system. This can prevent the situation that the exposure accuracy is lowered, thereby preventing the situation.

The projection exposure apparatus according to claim 7 has a structure in which the suction device is arranged near the optical path of the exposure light. As a result, the projection exposure apparatus has an effect that scattered matters such as gas and fine particles can be efficiently suctioned and removed without hindering the exposure processing using the exposure light.

The projection exposure apparatus according to claim 8 is configured such that the gas delivery device delivers gas from the projection optical system side to the photosensitive agent application surface side. Thus, in this projection exposure apparatus, the air between the projection optical system and the photosensitive agent coated surface of the substrate can be removed and replaced with an inert gas, so that the energy amount of exposure light is reduced by oxygen. In addition, since the flow of the inert gas becomes substantially parallel to the optical axis of the exposure light, the fluctuation due to the concentration of the inert gas can be reduced.

[Brief description of the drawings]

FIG. 1 is a diagram showing a first embodiment of the present invention, and is a cross-sectional view in which a chamber is attached to a wafer.

FIG. 2 is a perspective view of the appearance.

FIG. 3 is a view showing the first embodiment of the present invention, and is a schematic configuration diagram of a projection exposure apparatus in which a chamber is attached to a wafer.

FIG. 4 is a view showing a second embodiment of the present invention, and is a schematic configuration diagram of a projection exposure apparatus in which an exhaust device and a replacement gas supply device are connected to a chamber attached to a wafer.

FIG. 5 is a detailed view of a main part in FIG. 4;

FIG. 6 is a view showing a third embodiment of the present invention, and is a schematic configuration diagram of a projection exposure apparatus in which a chamber is mounted on a wafer stage.

FIG. 7 is a detailed view of a main part in FIG. 6;

FIG. 8 is a cross-sectional view illustrating a fourth embodiment of the present invention, in which an exhaust device and a replacement gas supply device are connected to a chamber attached to a wafer stage.

FIG. 9 is a view showing a fifth embodiment of the present invention, and is a schematic configuration diagram of a projection exposure apparatus provided with a suction device.

FIG. 10 is a detailed view of a main part in FIG. 9;

FIG. 11 is a view showing a sixth embodiment of the present invention, and is a detailed view of a main part of a projection exposure apparatus provided with a suction device and a gas delivery device.

[Explanation of symbols]

 K Resist (photosensitive agent) M Mask W Wafer (substrate) 1 Projection exposure device 9 Projection optical system (projection lens) 10 Wafer stage (substrate stage) 15, 15a, 15b Chamber 18 Top surface (photosensitive agent coated surface) 19 Exhaust device 20 Replacement gas supply device 23 Suction device 30 Gas delivery device

Claims (8)

[Claims] 1. A projection exposure apparatus for projecting and exposing a pattern of a mask on a substrate coated with a photosensitive agent using exposure light, wherein a chamber for transmitting the exposure light and at least accommodating the photosensitive agent application surface of the substrate. A projection exposure apparatus, comprising: 2. The projection exposure apparatus according to claim 1, wherein the chamber is attached to the substrate. 3. The projection exposure apparatus according to claim 1, wherein the chamber is mounted on a substrate stage that holds the substrate. 4. The projection exposure apparatus according to claim 1, further comprising an exhaust device that exhausts the inside of the chamber. 5. The projection exposure apparatus according to claim 1, further comprising a replacement gas supply device that supplies a replacement gas into the chamber. 6. A projection exposure apparatus for projecting and exposing a mask pattern on a substrate coated with a photosensitive agent by exposure light via a projection optical system, wherein a suction device for sucking air on the photosensitive agent application surface side of the substrate. A projection exposure apparatus comprising: 7. The projection exposure apparatus according to claim 6, wherein the suction device is disposed near an optical path of the exposure light. 8. The projection exposure apparatus according to claim 6, further comprising a gas delivery device that delivers gas from the projection optical system side to the photosensitive agent application surface. .