JP4000745B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4000745B2
JP4000745B2 JP2000077830A JP2000077830A JP4000745B2 JP 4000745 B2 JP4000745 B2 JP 4000745B2 JP 2000077830 A JP2000077830 A JP 2000077830A JP 2000077830 A JP2000077830 A JP 2000077830A JP 4000745 B2 JP4000745 B2 JP 4000745B2
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wiring
plating
semiconductor chip
substrate
manufacturing
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JP2000340596A (ja
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幸宏 前田
崇 長坂
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Denso Corp
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Denso Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は、基板に搭載された半導体チップと該基板の配線部とをワイヤボンディングしてなる半導体装置の製造方法に関する。
【０００２】
【従来の技術】
従来、この種の一般的な半導体装置の製造方法を図４に示す。まず、図４（ａ）に示す様に、一面上にＡｕフラッシュめっきよりなる配線部（ボンディングランド）Ｊ１が形成されたプリント基板Ｊ２を用意し（図４（ａ）中、Ｊ３はコンデンサ等の部品、Ｊ４は半田）、図４（ｂ）に示す様に、プリント基板Ｊ２の一面に半導体チップＪ５を導電性接着剤Ｊ６により接着し搭載（ダイマウント）した後、図４（ｄ）に示す様に、半導体チップＪ５と配線部Ｊ１とを、ＡｕやＡｌのワイヤボンディングを行い、ワイヤＪ７で結線するようにしている。
【０００３】
ここで、ボンディング工程直前に、図４（ｃ）に示す様に、配線部Ｊ１であるＡｕフラッシュめっきの表面を、プラズマ装置を用いてプラズマ放電によって発生するイオン粒子を衝突させることにより清浄化する、つまりプラズマクリーニングを行う方法が知られている（特開平７−２８３１９９号公報、特開平８−１１５９３６号公報、特開平８−１６２４３８号公報、特開平１０−５０７５５号公報等）。
【０００４】
プリント基板Ｊ２の場合、配線部Ｊ１にはＣｕめっき配線が用いられ、酸化防止のため最表面にＡｕフラッシュめっきを施すようにしているが、ＣｕとＡｕは相互拡散するため、間にＮｉめっきを挟む構造としている。しかしながら、上述の半田付工程時あるいは半導体チップのダイマウント工程時の熱履歴によって、ＮｉめっきがＡｕめっき上に析出し、ワイヤボンディング性が低下してしまうため、ワイヤボンディング前にプラズマクリーニングを行うようにしている。
【０００５】
【発明が解決しようとする課題】
しかしながら、ボンディング工程直前でプラズマ中で配線部（ボンディングランド）Ｊ１表面をプラズマクリーニングする場合、半導体チップＪ５も同様にプラズマ雰囲気中にある（プラズマ中性子にさらされる）ため、その半導体チップＪ５にダメージを与える可能性が高い。
【０００６】
本発明は上記問題点に鑑み、半導体チップにプラズマクリーニングによるダメージを与えることなく、ワイヤボンディング性を確保することのできる半導体装置の製造方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】
本発明は、導電性接着剤の印刷、部品搭載、接着剤硬化、ワイヤボンディングの一連の工程において、基板素材がプリント基板の場合、配線のＡｕフラッシュめっきの下地であるＮｉが硬化時に熱により表面に析出しボンディングを困難にしているが、例えばセラミック基板のようなＣｕめっき配線では、めっきの下地が析出することはなく、半導体チップ搭載前にプラズマクリーニングすることができるという点に着目してなされたものである。
【０００８】
即ち、請求項１記載の発明では、一面（１１）上に配線部（２０、２１）が形成された基板（１０）を用意し、該基板の一面に、プラズマ放電によって発生するイオン粒子を衝突させることにより該配線部の表面を清浄化した後、該基板の一面に、導電性接着剤（４０）を使用して、半導体チップ（５０）およびそれ以外の部品（６０）からなる全部品を搭載し、続いて該半導体チップと該配線部とをワイヤボンディングにより電気的に接続するようにしたことを特徴としている。本発明によれば、ボンディング性を確保しつつ、半導体チップ搭載工程（Ｓ５、Ｓ８）前に配線部表面のプラズマクリーニングを可能とできる。
【０００９】
また、請求項２記載の発明では、配線部（２０、２１）をＣｕ（ＣｕめっきまたはＣｕ厚膜等）またはＡｇ（Ａｇ厚膜）等により形成しているから、該配線部表面をプラズマクリーニングした後、半導体チップを搭載しても、従来のプリント基板のＡｕフラッシュめっき／Ｎｉめっき／Ｃｕめっき配線構造のように、チップ搭載工程の熱履歴によって配線部の表面に析出物が生じてその後のボンディング性を損なうことが無い。
【００１０】
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【００１１】
【発明の実施の形態】
以下、本発明を図に示す実施形態について説明する。図１は本発明の実施形態に係る半導体装置の製造方法を示す流れ図であり、図２及び図３は、その製造方法の工程説明図である。図２及び図３（ａ）は、最終的に図３（ｂ）に示すワイヤボンディングが施された半導体装置１００を製造する途中工程を示している。以下、本実施形態について製造工程順に説明していく。
【００１２】
まず、基板用意工程Ｓ１では、図２（ａ）に示す様に、一面に表層配線部を有するセラミック基板又はプリント基板を用意する。セラミック基板としては、例えば一面１１上にタングステン等の表層配線１２が形成されたメタライズ基板（本発明でいう基板）１０を用意する。プリント基板としては、例えば一面上にＣｕめっき配線が施された配線基板１０を用意する。
【００１３】
次に、Ｃｕめっき工程Ｓ２では、図２（ｂ）に示す様に、メタライズ基板１０の一面１１に形成された表層配線１２に、電気めっき法等によりＣｕめっきを施し、表層配線１２の表面をＣｕめっき層２０にて被覆する。プリント基板の場合、Ｃｕめっき工程は省くことができる。
【００１４】
なお、図１に示す様に、Ｃｕめっき工程Ｓ２の後に、Ｃｕ厚膜印刷工程Ｓ３を行っても良い。この工程Ｓ３は、図２（ｃ）に示す様に、Ｃｕめっき層２０の表面に印刷によって選択的にＣｕ厚膜２１を形成する。ここで、Ｃｕ厚膜印刷工程Ｓ３を行わない場合にはＣｕめっき層２０が、Ｃｕ厚膜印刷工程Ｓ３を行う場合にはＣｕめっき層２０及びＣｕ厚膜２１が、各場合、本発明でいうＣｕよりなる配線部に相当する。
【００１５】
上記工程Ｓ２またはＳ３（配線部形成工程）の後、プラズマクリーニング工程Ｓ４を行う。プラズマクリーニング装置３０はチャンバ３１内に一対の電極３２、３３を設け、一方の電極３２にメタライズ基板１０の他面側を固定するようになっている。そして、例えば、チャンバ３１内をアルゴンと水素の混合ガス雰囲気として、一対の電極３２、３３間に電界を印加し（例えば７５０Ｗ、２分間）、プラズマ放電によって発生するイオン粒子（Ａｒ+、Ｈ+等）を基板１０の一面１１に衝突させ、配線部２０、２１の表面を清浄化する。
【００１６】
この工程Ｓ４により、配線部２０、２１の表面に初期的に存在する汚れ、酸化膜などを除去することができる。
【００１７】
次に、全部品一括組付工程Ｓ５では、図３（ａ）に示す様に、導電性接着剤４０を使用して、半導体チップ５０およびコンデンサなどの部品６０を基板１０の配線部２０、２１上に電気的に接続し搭載する。チップ５０及び部品６０と接続されない配線部２０、２１はワイヤボンディングのボンディングランドとなる。
【００１８】
ここで、導電性接着剤４０は、樹脂中に、Ａｇ、Ａｇ／Ｐｄ、Ａｇ／Ｐｔ、Ａｕ、Ｃｕ、Ｎｉ等をフィラーとして混入し、これらの物理的接触によって導電性を得るための接着剤である。導電性接着剤４０にブリード（導電性接着剤４０に含まれる樹脂中の成分が硬化せずに外に流れ出す現象）の少ない材料を選べば、半田のようにフラックスが基板上に流出することなく接続することができるため、近傍にボンディングランドが存在してもボンディング性を低下させることなく、部品を接続することができる。
【００１９】
また、導電性接着剤の硬化は、低酸素濃度（１０ｐｐｍ以下）のＮ2雰囲気下で熱処理（例えば１５０℃、１０分間）して硬化させれば、Ｃｕを用いた配線部２０、２１であっても、全く酸化しないことが確認されている。
【００２０】
これらの工程Ｓ１〜Ｓ５を経た後、ワイヤボンディング工程Ｓ６を行うことによって、図３（ｂ）に示す様に、ＡｕあるいはＡｕ合金またはＡｌあるいはＡｌ合金のワイヤ７０によって半導体チップ５０と配線部２０、２１とが電気的に接続された半導体装置１００が出来上がる。
【００２１】
なお、本実施形態においては、図１に示す様に、Ｃｕめっき工程Ｓ２またはＣｕ厚膜印刷工程Ｓ３の後に、半導体チップ以外の部品組付工程Ｓ７を行い、その後、上記プラズマクリーニング工程Ｓ４を行い、次に、半導体チップ組付工程Ｓ８を行って、上記ワイヤボンディング工程Ｓ６を行っても良い（変形例）。
【００２２】
即ち、この変形例においては、工程Ｓ２またはＳ３の後に、半導体チップ以外の部品組付工程Ｓ７にて、導電性接着剤４０を用いて半導体チップ５０以外の部品６０を配線部２０、２１上に搭載し、その後、上記プラズマクリーニング工程Ｓ４を行い、次に、半導体チップ組付工程Ｓ８にて、導電性接着剤４０を用いて半導体チップ５０を配線部２０、２１上に搭載し、続いて、上記ワイヤボンディング工程Ｓ６を行う。ここで、工程Ｓ７及びＳ８は、例えば、上記工程Ｓ５と同様の条件（例えばＮ2雰囲気、１５０℃、１０分間）にて行うことができる。
【００２３】
また、工程Ｓ７においてＣｕ配線部の表層が酸化されたとしても、その後のプラズマクリーニング工程Ｓ４で清浄化され、工程Ｓ８を上述の工程Ｓ５と同様の条件で行えば問題はない。この変形例によっても、図３（ｂ）に示す半導体装置１００が出来上がる。
【００２４】
上記の製造方法においては、工程Ｓ１、Ｓ２、Ｓ３が、本発明でいう「基板を用意する工程」に相当し、工程Ｓ４が、本発明でいう「配線部の表面を清浄化する工程」に相当し、工程Ｓ５、Ｓ８が、本発明でいう「半導体チップを搭載する工程」に相当し、工程Ｓ６が、本発明でいう「ワイヤボンディングにより電気的に接続する工程」に相当する。
【００２５】
ところで、上記製造方法によれば、ワイヤボンディングのボンディングランドである配線部をＣｕ（Ｃｕめっき層２０および／またはＣｕ厚膜２１）により形成しているから、配線部２０、２１表面をプラズマクリーニングした後、半導体チップ５０を搭載しても、従来のＡｕフラッシュめっきを用いたプリント基板のようにＮｉめっきを必要とせず、チップ搭載工程Ｓ５、Ｓ８の熱履歴によって配線部の表面に析出物が生じボンディング性を損なうことが無くなる。
【００２６】
上述のメタライズ基板のように下地にタングステンを有していても、タングステンとＣｕは拡散しにくいため、下地層（タングステン）の表層への析出はない。従って、良好なボンディング性を確保しつつ、半導体チップ搭載工程前に配線部表面のプラズマクリーニングを可能とでき、半導体チップ５０は、プラズマ雰囲気にさらされることがないから、ダメージの懸念が無くなる。
【００２７】
また、本実施形態では、基板として、セラミック基板又はプリント基板上にＣｕを配線材料として使用したものを用い、Ｃｕの配線部２０、２１はめっき、厚膜印刷などの手法により形成している。従来のプリント基板上のＡｕフラッシュめっきでも厚く形成することにより、Ｎｉめっきの析出を防ぐことはできるが、大きなコストアップとなってしまう。ところが、Ｃｕ材料を使用することにより、膜厚を厚く形成しても安く仕上げることができるという利点を持つ。
【００２８】
なお、基板１０の一面１１に形成された配線部においては、少なくともワイヤボンディングされるものが、ＣｕめっきやＣｕ厚膜で構成されていればよく、部品６０を接続するものはＣｕで構成されていないものであってもよい。
【００２９】
また、基板１０としては、セラミック基板上にＡｇ厚膜、ガラスペーストを交互に印刷、焼成して作成した配線基板を用いることもできる。この場合、表層配線はＡｇ厚膜配線となる。この場合も、ボンディング性を悪化させる要因となるＮｉめっきの使用がないため、半導体チップ搭載前にプラズマクリーニング工程を実施することができ、良好なボンディング性を確保しつつ、半導体チップへのダメージの懸念を無くすことができる。
【図面の簡単な説明】
【図１】本発明の実施形態に係る半導体装置の製造方法を示す流れ図である。
【図２】上記実施形態に係る半導体装置の製造方法を説明する工程説明図である。
【図３】図２に続く製造方法を説明する工程説明図である。
【図４】従来の半導体装置の製造方法を説明する工程説明図である。
【符号の説明】
１０…メタライズ基板、１１…メタライズ基板の一面、２０…Ｃｕめっき層、
２１…Ｃｕ厚膜、５０…半導体チップ、Ｓ１…基板用意工程、
Ｓ２…Ｃｕめっき工程、Ｓ３…Ｃｕ厚膜印刷工程、
Ｓ４…プラズマクリーニング工程、Ｓ５…全部品一括組付工程、
Ｓ６…ワイヤボンディング工程、Ｓ８…半導体チップ組付工程。

Claims (3)

  1. 一面（１１）上に配線部（２０、２１）が形成された基板（１０）を用意する工程（Ｓ１、Ｓ２、Ｓ３）と、
    前記基板の一面に、プラズマ放電によって発生するイオン粒子を衝突させることにより前記配線部の表面を清浄化する工程（Ｓ４）と、
    この工程の後、前記基板の一面に、導電性接着剤（４０）を使用して、半導体チップ（５０）およびそれ以外の部品（６０）からなる全部品を搭載する工程（Ｓ５、Ｓ８）と、
    搭載された半導体チップと前記配線部とをワイヤボンディングにより電気的に接続する工程（Ｓ６）と、を有することを特徴とする半導体装置の製造方法。
  2. 前記配線部（２０、２１）をＣｕめっき、Ｃｕ厚膜またはＡｇ厚膜により形成することを特徴とする請求項１に記載に半導体装置の製造方法。
  3. 前記ワイヤボンディング工程（Ｓ６）は、ＡｕあるいはＡｕ合金またはＡｌあるいはＡｌ合金を用いて行うことを特徴とする請求項１または２に記載の半導体装置の製造方法。
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