JP3997859B2 - 半導体装置の製造方法および製造装置 - Google Patents

半導体装置の製造方法および製造装置 Download PDF

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Publication number
JP3997859B2
JP3997859B2 JP2002216011A JP2002216011A JP3997859B2 JP 3997859 B2 JP3997859 B2 JP 3997859B2 JP 2002216011 A JP2002216011 A JP 2002216011A JP 2002216011 A JP2002216011 A JP 2002216011A JP 3997859 B2 JP3997859 B2 JP 3997859B2
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Japan
Prior art keywords
wafer
gas
semiconductor device
manufacturing
cleaning
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Expired - Fee Related
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JP2002216011A
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English (en)
Japanese (ja)
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JP2004063521A5 (https=
JP2004063521A (ja
Inventor
賢悦 横川
義典 桃井
勝 伊澤
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2002216011A priority Critical patent/JP3997859B2/ja
Priority to US10/460,155 priority patent/US6977229B2/en
Publication of JP2004063521A publication Critical patent/JP2004063521A/ja
Publication of JP2004063521A5 publication Critical patent/JP2004063521A5/ja
Application granted granted Critical
Publication of JP3997859B2 publication Critical patent/JP3997859B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures

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  • Cleaning Or Drying Semiconductors (AREA)
JP2002216011A 2002-07-25 2002-07-25 半導体装置の製造方法および製造装置 Expired - Fee Related JP3997859B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002216011A JP3997859B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法および製造装置
US10/460,155 US6977229B2 (en) 2002-07-25 2003-06-13 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002216011A JP3997859B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法および製造装置

Publications (3)

Publication Number Publication Date
JP2004063521A JP2004063521A (ja) 2004-02-26
JP2004063521A5 JP2004063521A5 (https=) 2005-08-25
JP3997859B2 true JP3997859B2 (ja) 2007-10-24

Family

ID=30767944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002216011A Expired - Fee Related JP3997859B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法および製造装置

Country Status (2)

Country Link
US (1) US6977229B2 (https=)
JP (1) JP3997859B2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2180054A1 (en) * 1999-12-24 2010-04-28 Genentech, Inc. Methods and compositions for prolonging elimination half-times of bioactive compounds
US20060046465A1 (en) * 2004-08-27 2006-03-02 Dongbuanam Semiconductor Inc. Method for manufacturing a semiconductor device
US9627184B2 (en) * 2005-01-26 2017-04-18 Tokyo Electron Limited Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program
US20060162742A1 (en) * 2005-01-26 2006-07-27 Tokyo Electron Limited Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US20060219268A1 (en) * 2005-03-30 2006-10-05 Gunilla Jacobson Neutralization of systemic poisoning in wafer processing
JP4159584B2 (ja) * 2006-06-20 2008-10-01 エルピーダメモリ株式会社 半導体装置の製造方法
JP4503095B2 (ja) * 2007-05-15 2010-07-14 キヤノンアネルバ株式会社 半導体素子の製造方法
CN101971298A (zh) * 2007-11-02 2011-02-09 佳能安内华股份有限公司 表面处理设备和表面处理方法
JP5492574B2 (ja) * 2010-01-08 2014-05-14 東京エレクトロン株式会社 基板のクリーニング方法及び基板のクリーニング装置
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
TWI794238B (zh) * 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
CN110230069A (zh) * 2019-06-11 2019-09-13 中国人民解放军第五七一九工厂 一种dz40m钴基高温合金零件表面及裂纹内部氧化膜绿色去除方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3348804B2 (ja) 1994-09-20 2002-11-20 株式会社日立製作所 エッチング後処理方法
JP3563462B2 (ja) 1994-11-15 2004-09-08 松下エコシステムズ株式会社 活性空気による乾式洗浄方法とその装置、および除電方法
JPH0917776A (ja) 1995-06-27 1997-01-17 Sony Corp 半導体装置の製造方法及び半導体製造装置
JP4016598B2 (ja) * 2001-01-16 2007-12-05 株式会社日立製作所 半導体装置の製造方法

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Publication number Publication date
US6977229B2 (en) 2005-12-20
JP2004063521A (ja) 2004-02-26
US20040018727A1 (en) 2004-01-29

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