JP2004063521A5 - - Google Patents
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- Publication number
- JP2004063521A5 JP2004063521A5 JP2002216011A JP2002216011A JP2004063521A5 JP 2004063521 A5 JP2004063521 A5 JP 2004063521A5 JP 2002216011 A JP2002216011 A JP 2002216011A JP 2002216011 A JP2002216011 A JP 2002216011A JP 2004063521 A5 JP2004063521 A5 JP 2004063521A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- gas
- manufacturing
- semiconductor device
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 39
- 238000004519 manufacturing process Methods 0.000 claims 26
- 239000004065 semiconductor Substances 0.000 claims 26
- 238000004140 cleaning Methods 0.000 claims 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- 239000002994 raw material Substances 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 3
- 238000005108 dry cleaning Methods 0.000 claims 3
- 239000012530 fluid Substances 0.000 claims 3
- 239000001307 helium Substances 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 229910052743 krypton Inorganic materials 0.000 claims 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052754 neon Inorganic materials 0.000 claims 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 3
- 229910052724 xenon Inorganic materials 0.000 claims 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002216011A JP3997859B2 (ja) | 2002-07-25 | 2002-07-25 | 半導体装置の製造方法および製造装置 |
| US10/460,155 US6977229B2 (en) | 2002-07-25 | 2003-06-13 | Manufacturing method for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002216011A JP3997859B2 (ja) | 2002-07-25 | 2002-07-25 | 半導体装置の製造方法および製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004063521A JP2004063521A (ja) | 2004-02-26 |
| JP2004063521A5 true JP2004063521A5 (https=) | 2005-08-25 |
| JP3997859B2 JP3997859B2 (ja) | 2007-10-24 |
Family
ID=30767944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002216011A Expired - Fee Related JP3997859B2 (ja) | 2002-07-25 | 2002-07-25 | 半導体装置の製造方法および製造装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6977229B2 (https=) |
| JP (1) | JP3997859B2 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2180054A1 (en) * | 1999-12-24 | 2010-04-28 | Genentech, Inc. | Methods and compositions for prolonging elimination half-times of bioactive compounds |
| US20060046465A1 (en) * | 2004-08-27 | 2006-03-02 | Dongbuanam Semiconductor Inc. | Method for manufacturing a semiconductor device |
| US9627184B2 (en) * | 2005-01-26 | 2017-04-18 | Tokyo Electron Limited | Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program |
| US20060162742A1 (en) * | 2005-01-26 | 2006-07-27 | Tokyo Electron Limited | Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US20060219268A1 (en) * | 2005-03-30 | 2006-10-05 | Gunilla Jacobson | Neutralization of systemic poisoning in wafer processing |
| JP4159584B2 (ja) * | 2006-06-20 | 2008-10-01 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| JP4503095B2 (ja) * | 2007-05-15 | 2010-07-14 | キヤノンアネルバ株式会社 | 半導体素子の製造方法 |
| CN101971298A (zh) * | 2007-11-02 | 2011-02-09 | 佳能安内华股份有限公司 | 表面处理设备和表面处理方法 |
| JP5492574B2 (ja) * | 2010-01-08 | 2014-05-14 | 東京エレクトロン株式会社 | 基板のクリーニング方法及び基板のクリーニング装置 |
| CN104425289B (zh) * | 2013-09-11 | 2017-12-15 | 先进科技新加坡有限公司 | 利用激发的混合气体的晶粒安装装置和方法 |
| TWI794238B (zh) * | 2017-07-13 | 2023-03-01 | 荷蘭商Ａｓｍ智慧財產控股公司 | 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法 |
| CN110230069A (zh) * | 2019-06-11 | 2019-09-13 | 中国人民解放军第五七一九工厂 | 一种dz40m钴基高温合金零件表面及裂纹内部氧化膜绿色去除方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3348804B2 (ja) | 1994-09-20 | 2002-11-20 | 株式会社日立製作所 | エッチング後処理方法 |
| JP3563462B2 (ja) | 1994-11-15 | 2004-09-08 | 松下エコシステムズ株式会社 | 活性空気による乾式洗浄方法とその装置、および除電方法 |
| JPH0917776A (ja) | 1995-06-27 | 1997-01-17 | Sony Corp | 半導体装置の製造方法及び半導体製造装置 |
| JP4016598B2 (ja) * | 2001-01-16 | 2007-12-05 | 株式会社日立製作所 | 半導体装置の製造方法 |
-
2002
- 2002-07-25 JP JP2002216011A patent/JP3997859B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-13 US US10/460,155 patent/US6977229B2/en not_active Expired - Lifetime
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