TW202028499A - 基板保持機構及成膜裝置 - Google Patents

基板保持機構及成膜裝置 Download PDF

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TW202028499A
TW202028499A TW108141730A TW108141730A TW202028499A TW 202028499 A TW202028499 A TW 202028499A TW 108141730 A TW108141730 A TW 108141730A TW 108141730 A TW108141730 A TW 108141730A TW 202028499 A TW202028499 A TW 202028499A
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substrate
gas
pedestal
holding mechanism
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藤里敏章
望月隆
鳥屋大輔
鈴木公貴
魯和俊
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日商東京威力科創股份有限公司
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Abstract

提供一種在藉由電漿CVD或電漿ALD來成膜出導電性膜時可將被處理基板靜電吸附的基板保持機構及使用其之成膜裝置。
基板保持機構係具備：台座，係以介電體所構成，並支撐被處理基板；吸附電極，係設置於台座內；以及加熱器，係加熱台座，被處理基板會藉由強森拉伯克力(Johnson-Rahbek force)來被靜電吸附於台座表面，台座係具有：密合區域，係將被處理基板密合於台座表面之被處理基板外周所對應的位置，並具有阻止用以成膜出導電性膜之原料氣體繞進至該被處理基板內面側之功能，且構成為環狀；以及溝部，係環狀地被設置在台座表面之密合區域外側部分，並可沉積原料氣體所致之導電性沉積膜。

Description

基板保持機構及成膜裝置
本揭露係關於一種基板保持機構及成膜裝置
在半導體元件之製造程序中，對為被處理基板之半導體晶圓大多會使用乾蝕刻或濺鍍、電漿CVD等的電漿處理。
如此般，在電漿處理中，為了保持被處理基板，大多會使用利用靜電吸附之靜電夾具(例如專利文獻1~5)。
另一方面，在藉由電漿CVD或電漿ALD般的等向性成膜方法來成膜出導電性膜的情況，便會有因為原料氣體繞進被處理基板之保持面而沉積出導電性膜，導致無法發揮靜電夾具功能之虞。因此，在以電漿CVD或電漿ALD來成膜出導電性膜的情況，便不使用靜電夾具而是在將基板載置於基板載置台的狀態下來進行電漿處理。
[先前技術文獻]
[專利文獻]
專利文獻1：日本特開平5-67673號公報
專利文獻2：日本特開平7-130830號公報
專利文獻3：日本特開平9-260472號公報
專利文獻4：日本特開2003-297912號公報
專利文獻5：日本特開2009-21592號公報
本揭露係提供一種在藉由電漿CVD或電漿ALD來成膜出導電性膜時可將被處理基板靜電吸附的基板保持機構及使用其之成膜裝置。
本揭露一態樣相關之基板保持機構，係在藉由電漿CVD或電漿ALD來成膜出導電性膜時保持被處理基板的基板保持機構，具備：台座，係以介電體所構成，並支撐被處理基板；吸附電極，係設置於該台座內，並用以將該被處理基板靜電吸附；以及加熱器，係加熱該台座；藉由將直流電壓施加至該吸附電極，該被處理基板便會藉由強森拉伯克力(Johnson-Rahbek force)來被靜電吸附於該台座之表面；該台座係具有：密合區域，係將該被處理基板密合於該台座之表面的該被處理基板外周所對應的位置，並具有阻止用以成膜出該導電性膜之原料氣體繞進至該被處理基板之內面側的功能，且構成為環狀；以及溝部，係環狀地被設置在該台座之表面的該密合區域之外側部分，並可沉積該原料氣體所致之導電性沉積膜。
根據本揭露，便能提供一種在藉由電漿CVD或電漿ALD來成膜出導電性膜時可將被處理基板靜電吸附的基板保持機構及使用其之成膜裝置。
1:基板保持機構
2:台座
3:支撐構件
11、11a:吸附電極
12:加熱器
19:輔助電極
21:密合區域
22:吸附面
23:空間
24:氣體導入口
25:溝部
28:導電性沉積膜
100:成膜裝置
101:腔室
110:噴淋頭
120:氣體供給機構
141:高頻電源
W:晶圓(被處理基板)
圖1係顯示一實施形態相關之基板保持機構的立體圖。
圖2係顯示一實施形態相關之基板保持機構的俯視圖。
圖3係顯示一實施形態相關之基板保持機構的剖面圖。
圖4係將一實施形態相關之基板保持機構的重要部分放大而顯示的剖面圖。
圖5係顯示其他實施形態相關之部分基板保持機構之剖面圖。
圖6係顯示圖5所示之其他實施形態相關的基板保持機構變形例之剖面圖。
圖7係顯示圖5所示之其他實施形態相關的基板保持機構其他變形例之剖面圖。
圖8係顯示適用一實施形態相關之基板保持機構的成膜裝置之剖面圖。
以下，便參照添附圖式就實施形態來加以說明。
<基板保持機構>
首先，便就一實施形態相關之基板保持機構來加以說明。圖1係顯示一實施形態相關之基板保持機構的立體圖、圖2係其俯視圖、圖3係其剖面圖。圖4係將其重要部分放大而顯示的剖面圖。
基板保持機構1係在藉由電漿CVD或電漿ALD來於為被處理基板之半導體晶圓(以下僅成為晶圓)成膜出導電性膜之成膜裝置中，將晶圓保持在被保持為真空之腔室內者。所成膜出之導電性膜係可舉有Ti膜、TiN膜、W膜、Ni膜等。
基板保持機構1係具有：台座2，係載置為被處理基板之晶圓W；以及支撐構件3，係以延伸至下方之方式來被安裝於台座2內面側之中央。
台座2係由介電體，例如氮化鋁(AlN)等的陶瓷所構成。台座2內部係在其表面附近部分埋設有吸附晶圓W之吸附電極11，並構成靜電夾具。吸附電極11係以例如Mo來加以形成，構成為例如網狀。吸附電極11係透過供電線13來連接有直流電源14，藉由將直流電壓施加至吸附電極11來將晶圓W靜電吸附。直流電源14會藉由開關(未圖示)來進行ON、OFF。另外，吸附電極11係作為相對於電漿之接地電極來發揮功能。
台座2內部之吸附電極11下方係埋設有加熱器12。加熱器12係透過供電線15來連接有加熱電源16，且會基於熱電偶等的溫度感應器(未圖示)的檢測值來控制加熱器12之輸出，以控制台座2之溫度。
台座2表面係在晶圓W外周所對應之位置形成有為圓環狀，並密合晶圓W的密合區域21。密合區域21係具有阻止讓用以成膜出導電性膜之原料氣體繞進至晶圓W內面側的功能。藉此，便可抑制在晶圓內面形成有導電性沉積膜。從能發揮此般功能的觀點看來，密合區域21之寬度X1較佳地係10~40mm。密合區域21會以使其外徑成為較晶圓W之直徑要小的方式來加以形成。這是因為在密合區域21外徑會較晶圓W之直徑要大時，沉積物便會跑到晶圓W上之故。
密合區域21內側係形成有會從密合區域21形成為低20~70μm而構成凹部並吸附晶圓W的吸附面22。吸附面22係成為例如施予壓凹加工後之壓凹面。吸附面22與晶圓內面之間係形成有空間23。吸附面22係形成有氣體導入口24，並從氣體導入口24來將會從氣體供給源18透過氣體供給路徑17而供給之背側氣體供給至空間23內。氣體供給源18、氣體供給路徑17、氣體導入口24會構成背側氣體供給機構。背側氣體可使用如氦氣(He)般之高熱傳導性的氣體，而透過背側氣體來將台座2之熱量傳導至晶圓W。
背側氣體之氣壓較佳地係較高地設定為20~100Torr。藉此，便會使溢漏氣體的量增加而可抑制原料氣體朝晶圓W內面入侵。
在台座2表面較密合區域21要靠外側的部分係形成有設置為圓環狀，且可沉積用以成膜出導電性膜之原料氣體所致的導電性沉積膜的溝部25。雖台座2表面較密合區域21要靠外側部分係沉積有導電性沉積膜，但如圖4所示，係藉由設置溝部25來讓導電性沉積膜28沉積於溝部25。因此，即便導電性 沉積膜28與時俱進地增加，在產生有晶圓W之移載偏移的情況等下仍可抑制導電性沉積膜形成在密合區域21，而可抑制靜電夾具的電荷漏失。由此般觀點看來，溝部25之起自密合區域21的深度(距離d(參照圖4))較佳地係在20~100μm的範圍，例如為50μm。又，溝部25之寬度較佳地係在0.5~2mm的範圍。
台座2表面較溝部25要靠外側的部分會形成為高於密合區域21，而成為會引導晶圓W之引導部26。又，從溝部25朝引導部26連接的側壁部係例如為錐狀。
台座2之密合區域21外側部係形成有會貫穿於垂直方向的升降銷插通孔27。升降銷插通孔27係可升降地插通有升降銷(未圖示)，而在相對於台座2來進行收授時，會使升降銷從晶圓載置面(密合區域21表面)突出。
由可有效矯正為被處理基板之晶圓W的翹曲之觀點看來，會藉由朝吸附電極11供電，並以強森拉伯克力來吸附晶圓W。使用強森拉伯克力之晶圓W的吸附係以讓構成台座2之介電體成為在成膜溫度中之體積電阻率為1×109~1×1012Ω．cm左右而多少帶有導電性以可使電荷移動來加以進行。藉由使用強森拉伯克力，便可增加電荷之累積量，而可藉由庫倫力來得到高吸附力。藉由使用AlN來作為介電體，便可得到上述範圍的體積電阻率，而可有效地發揮強森拉伯克力。根據使用溫度，並藉由在AlN添加適當的添加物，便可調整能有效發揮強森拉伯克力的體積電阻率。為了有效地藉由強森拉伯克力來進行晶圓之吸附，較佳地係使從吸附電極11到晶圓W之吸附面的距離a成為0.5~1.5mm。
加熱器12所致的台座2表面之溫度，亦即晶圓W之成膜溫度較佳地係200℃。在加熱溫度為200℃以上的情況，便會使被處理基板的晶圓W之翹 曲容易變大，而會使靜電夾具之功能必要性提高。更佳地係400℃以上，進一步地400~700℃。
如圖4所示，吸附電極11係使與形成於較密合區域21要靠外側之導電性沉積膜28之間的距離b會較與晶圓W之間的距離a要大。亦即較佳地係以b>a之方式來加以設置。較佳一範例係a為1mm而b為2mm以上。藉此，便可有效抑制朝導電性沉積膜27之溢漏電流。
又，如上述，雖吸附電極11係作為電漿之接地電極來發揮功能，但由於為了滿足b>a，吸附電極11之直徑便會受到限制，故會使電漿區域亦會成為對應於吸附電極11之直徑者。從而，在欲更擴張電漿區域的情況，便如圖5所示，只要以電性連接於吸附電極11之方式來在吸附電極11外側設置輔助電極19的話即可。
此時，輔助電極19係被設置在吸附電極11下方之充分遠離導電性沉積膜28的位置(亦即，輔助電極19與導電性沉積膜28之間的距離會較距離a要大的位置(參照圖4))。又，亦可如圖6所示，設置有將輔助電極一體化的吸附電極11a。進一步地，亦可如圖7所示，以開關19a來切換輔助電極19的ON、OFF。
接著，便就如上述般所構成的基板保持機構1之作用、效果來加以說明。
在對晶圓等的被處理基板進行電漿處理時，自以往會在被處理基板之吸附使用靜電夾具。另一方面，在藉由電漿CVD或電漿ALD般的等向性成膜方法來成膜出導電性膜的情況，原料氣體會繞進被處理基板之保持面，使導電性沉積膜沉積，而會產生未發揮出靜電夾具之功能的情況。因此，便會有未發揮靜電 夾具功能之虞。因此，在藉由電漿CVD或電漿ALD來成膜出導電性膜的情況，便不使用靜電夾具。
然而，近年來，隨著元件世代的發展，因為元件之變更或採用新元件材料，而會使晶圓容易翹曲，因為晶圓之翹曲而會產生均勻性之惡化或晶圓W與台座之間的飛弧等。
於是，本實施形態中，係在藉由電漿CVD或電漿ALD來成膜出導電性膜時所使用的基板保持機構中，可將為被處理基板之晶圓W靜電吸附。
亦即，基板吸附機構1係具有：台座2，係以介電體所構成，並載置晶圓W；以及吸附電極11，係用以將設置於台座內之晶圓W靜電吸附，而會藉由強森拉伯克力來吸附晶圓W。又，台座2係具有：圓環狀密合區域21，係將晶圓W密合於其表面之晶圓W外周所對應的位置，並具有阻止用以成膜出導電性膜之原料氣體會繞進至晶圓W內面側的功能。進一步地，台座2係具有：溝部25，係圓環狀地設置於較其表面之密合區域21要靠外側的部分，並可沉積用以成膜出導電性膜之原料氣體所致的導電性沉積膜。
如此般，由於設置有可藉由強森拉伯克力來提高晶圓W之吸附力，且具有阻止原料氣體朝晶圓W內面側繞進之功能的密合區域21，以及可沉積其外側之導電性沉積膜的溝部25，故可抑制導電性沉積膜朝晶圓W內面之形成。因此，在電漿CVD或電漿ALD的導電性膜之成膜中，便可使溢漏電流難以產生，而可確實地將晶圓W靜電吸附。又，如此般，由於可以強森拉伯克力所致之高吸附力來將晶圓W靜電吸附，故即便在晶圓W產生有翹曲的情況，仍可在將翹曲矯正後的狀態下來吸附、保持晶圓W。
由於晶圓W之翹曲會因為加熱器12所致之台座2的加熱溫度，亦即晶圓W之成膜溫度為200℃以上而容易變大，故加熱溫度較佳地係200℃以上。更佳地係400℃以上，進一步地為400~700℃。
密合區域21的寬度X1較佳地係10~40mm。藉此，便可提高抑制原料氣體繞進至晶圓W內面的效果，而可有效抑制導電性沉積膜朝晶圓W內面之形成。又，藉由使溝部25之深度成為在20~100μm的範圍，溝部25之寬度成為在0.5~2mm的範圍，便可更加提高抑制在密合區域21形成有導電性沉積膜之效果。
又，在晶圓W之靜電吸附時，藉由將被導入至晶圓W內面側之空間23內的導熱用背側氣體的氣壓較高地設定為30~70Torr，便可提高溢漏氣體的量，而更有效抑制原料氣體朝晶圓W內面入侵。
進一步地，吸附電極11較佳地係以使與形成在較密合區域21要靠外側的導電性沉積28之間的距離b以及與晶圓W之間的距離a之關係成為b>a的方式來加以設置。藉此，便可有效抑制朝導電性沉積膜28之溢漏電流，而可抑制靜電夾具之功能下降。
再進一步地，藉由使吸附電極11作為電漿之接地電極來發揮功能，便無需另外設置接地電極，而可減少電極及配線的空間。
在此情況，雖電漿區域會被限制在以滿足b>a的方式所形成之吸附電極11的直徑，但藉由在充分遠離吸附電極外側之導電性沉積膜28的位置設置輔助電極，便可擴展電漿區域。
<成膜裝置>
接著，便就適用一實施形態相關之基板保持機構的成膜裝置來加以說明。
圖8係顯示適用一實施形態相關之基板保持機構的成膜裝置之剖面圖。
成膜裝置100係藉由在平行平板電極形成高頻電場，並藉由電漿CVD或電漿ALD來成膜出Ti膜者。
此成膜裝置100係具有為略圓筒狀之金屬製腔室101。腔室101係具有以覆蓋本體之底壁101b中央部所形成的圓形孔150的方式來朝向下方突出之排氣室151。排氣室151側面係連接有排氣管152，此排氣管152係設置有具壓力控制閥及真空泵的排氣裝置153。藉由此排氣裝置153，便可將腔室101內排氣並將腔室101內之壓力控制在既定壓力的減壓狀態。
腔室101側壁係設置有用以在與腔室101鄰接而設置的晶圓搬送室(未圖示)之間進行晶圓W之搬出入的搬出入口157以及開閉此搬出入口157的閘閥158。
腔室101內部係設置有用以吸附、保持為被處理基板之晶圓W的一實施形態相關之基板載置機構1。由於基板載置機構1係具有上述構成，故省略說明。基板保持機構1之支撐構件3會透過絕緣構件4來被安裝於排氣室151底壁。
腔室101之頂壁101a係透過絕緣構件109並以對向於基板保持機構1之台座2的方式來設置有會作為平行平板電極的上部電極來發揮功能的噴淋頭110。噴淋頭110會作為氣體導入部來發揮功能。噴淋頭110係具有基底構件111與噴淋板112，噴淋板112外周部會透過為圓環狀之中間構件113來被鎖固於基底構件111。噴淋板112係成為圓板狀，且於其外周形成有凸緣部。然後，在基底構件111與噴淋板112之間形成有氣體擴散空間114。基底構件111係在其外周形成有凸緣部111a，此凸緣部111a會被絕緣構件109所支撐。噴淋板112係具有會對向於晶座2的氣體噴出面118，噴淋板112係形成有複數氣體噴出孔115。基底構 件111中央附近係形成有1個氣體導入孔116。氣體導入孔116係連接有下述氣體供給機構120之氣體配管，並會透過噴淋頭110來將從氣體供給機構120所供給之處理氣體噴淋狀地導入至腔室101內。
又，噴淋頭110之基底構件111係設置有用以加熱噴淋頭110之加熱器147。此加熱器147會從加熱電源(未圖示)來被供電，以將噴淋頭110加熱至所欲溫度。基底構件111上部所形成之凹部係設置有絕熱構件149。
氣體供給機構120係具有TiCl4氣體供給源121、Ar氣體供給源122、H2氣體供給源123、NH3氣體供給源124以及N2氣體供給源125。TiCl4氣體係用於作為Ti原料氣體。Ar氣體係用於作為電漿生成氣體、載體氣體及沖淨氣體。H2氣體係用於作為還原氣體，NH3氣體係用於作為氮化氣體，N2氣體係用於作為沖淨氣體。
TiCl4氣體供給源121、Ar氣體供給源122、H2氣體供給源123、NH3氣體供給源124以及N2氣體供給源125係分別連接有TiCl4氣體供給管線131、Ar氣體供給管線132、H2氣體供給管線133、NH3氣體供給管線134以及N2氣體供給管線135。然後，各氣體管線係設置有質流控制器137以及其前後的2個開閉閥136。
Ar氣體供給管線132會連接於TiCl4氣體供給管線131，NH3氣體供給管線134及N2氣體供給管線135會連接於H2氣體供給管線133。TiCl4氣體供給管線131及H2氣體供給管線133會連接於氣體混合部138，而將在此混合之混合氣體透過氣體配管139來連接於上述氣體導入孔116。然後，混合氣體便會經由氣體導入孔116而到達至氣體擴散空間114，再通過噴淋板112之氣體噴出孔115來朝向腔室101內之晶圓W噴淋狀地噴出。
噴淋頭110係透過匹配器140來連接有高頻電源141，而從此高頻電源141來將高頻電力供給至噴淋頭110。噴淋頭110係作為平行平板電極之上部電極來發揮功能。另一方面，基板保持機構1之台座2內所設置的吸附電極11則會作為平行平板電極之下部電極(接地電極)來發揮功能。從而，藉由將高頻電力供給至噴淋頭110，來在噴淋頭110與吸附電極11之間形成高頻電場，再藉由此高頻電場，來將從噴淋頭110所噴出之處理氣體電漿化。亦即，高頻電源141會作為電漿生成機構來發揮功能。高頻電源141之頻率較佳地係設定為200kHz~13.56MHz，典型而言係使用450kHz。
成膜裝置100係具有控制為其構成部的基板保持機構1、閥136、質流控制器137、匹配器140、高頻電源141等的控制部160。控制部160係具有CPU(電腦)，並具有進行上述各構成部之控制的主控制部、輸入裝置、輸出裝置、顯示裝置以及記憶裝置。記憶裝置係設置有儲存用以控制成膜裝置100所實行之處理的程式，亦即處理配方的記憶媒體，主控制部會以叫出被記憶在記憶媒體之既定處理配方，而基於此處理配方來讓成膜裝置100進行既定處理的方式來加以控制。
接著，便就使用上述般之成膜裝置100所進行的Ti膜之成膜處理來加以說明。
首先，在調整腔室101內之壓力後，便使閘閥158開啟，而從搬送室(未圖示)透過搬出入口157來將晶圓W朝腔室101內搬入，並載置於基板保持機構1之被保持在既定溫度的台座2表面。然後，便讓為電漿生成氣體之Ar氣體、為還原氣體之H2氣體、為Ti原料氣體之TiCl4氣體流通於未圖示的預流管線來進 行預流。接著，便將氣體流量及壓力保持為相同而切換至成膜用管線，而將該等氣體同時或連續性地透過噴淋頭110來導入至腔室101內。
然後，在該等氣體開始導入後，便從高頻電源41來將高頻電力施加至噴淋頭110，而在既定時間點於腔室101內生成電漿。與此同時，藉由從直流電源14來將直流電壓施加至吸附電極11，來藉由強森拉伯克力將晶圓W靜電吸附於台座2。
然後，同時或在既定時間點連續性地將Ar氣體、H2氣體、TiCl4氣體導入，並持續性或在既定時間點來生成電漿，再藉由電漿CVD或電漿ALD來將Ti膜成膜在晶圓W表面。亦即，在電漿CVD的情況，會將Ar氣體、H2氣體、TiCl4氣體導入至腔室101內，並藉由高頻電源41來在腔室101內連續性地生成電漿。又，在電漿ALD的情況，會連續性地供給Ar氣體及N2氣體，並交互供給TiCl4氣體及H2氣體，並在例如供給H2氣體的時間點來生成電漿。
此時，台座2表面之溫度(晶圓W之成膜溫度)係可在300~700℃的範圍。較佳地係400~700℃，更佳地係500~600℃。
又，腔室101內之壓力係藉由電漿損傷與Ti膜之面內均勻性等來決定，較佳的範圍係13.3~1333Pa(0.1~10Torr)。
在如上述般之300~700℃的成膜溫度中，在如以往般不使用靜電夾具的情況，便會在晶圓W產生翹曲，而因為晶圓W之翹曲，便會產生均勻性之惡化或晶圓W與台座之間的飛弧等。
相對於此，在上述構成之基板保持機構1中，於成膜出為導電性膜之Ti膜的情況，導電性沉積膜形成在晶圓W內面之情事會被抑制，而可具有靜 電夾具功能。然後，由於會使用高吸附力之強森拉伯克力來作為靜電吸附力，故可確實地矯正晶圓W之翹曲。
<其他適用>
以上，雖已就實施形態來加以說明，但本次所揭露之實施形態應在所有的點上都只為例示而非為限制。上述實施形態中，係可不超出添附申請專利範圍及其主旨而以各種形態來進行省略、置換、變更。
例如，上述實施形態中，雖顯示設置有支撐台座2之支撐構件3的範例來作為基板保持機構1，但亦可不設置支撐構件3而將台座2直接設置於腔室底部。
又，上述實施形態中，雖已顯示將為被處理基板之半導體晶圓載置於台座的範例，但不限於此，亦可例如將台座表面朝向下，而於其表面支撐被處理基板，並藉由靜電吸附來加以吸附、保持。
進一步地，雖使用半導體晶圓來作為被處理基板之範例，但被處理基板並不限於晶圓，亦可為FPD基板等的其他被處理基板。在被處理基板為FPD基板般之矩形狀的情況，只要讓密合區域或溝部成為框狀即可。
再進一步地，上述成膜裝置不過為例示，只要為使用電漿之成膜裝置的話便不特別限制。電漿生成方式亦可為任意方式。
1:基板保持機構
2:台座
3:支撐構件
11:吸附電極
12:加熱器
13:供電線
14:直流電源
15:供電線
16:加熱電源
17:氣體供給路徑
18:氣體供給源
21:密合區域
22:吸附面
23:空間
24:氣體導入口
25:溝部
27:升降銷插通孔
W:晶圓(被處理基板)

Claims (18)

  1. 一種基板保持機構，係在藉由電漿CVD或電漿ALD來成膜出導電性膜時保持被處理基板的基板保持機構，具備：
    台座，係以介電體所構成，並支撐被處理基板；
    吸附電極，係設置於該台座內，並用以將該被處理基板靜電吸附；以及
    加熱器，係加熱該台座；
    藉由將直流電壓施加至該吸附電極，該被處理基板便會藉由強森拉伯克力(Johnson-Rahbek force)來被靜電吸附於該台座之表面；
    該台座係具有：
    密合區域，係將該被處理基板密合於該台座之表面的該被處理基板外周所對應的位置，並具有阻止用以成膜出該導電性膜之原料氣體繞進至該被處理基板之內面側的功能，且構成為環狀；以及
    溝部，係環狀地被設置在該台座之表面的該密合區域之外側部分，並可沉積該原料氣體所致之導電性沉積膜。
  2. 如申請專利範圍第1項之基板保持機構，其中該密合區域的寬度係10~40mm。
  3. 如申請專利範圍第1或2項之基板保持機構，其中該溝部係起自該密合區域之深度為20~100μm，寬度在0.5~2mm的範圍。
  4. 如申請專利範圍第1至3項中任一項之基板保持機構，其中該加熱器所致的該台座之表面的溫度係200℃以上。
  5. 如申請專利範圍第4項之基板保持機構，其中該加熱器所致的該台座之表面的溫度係400~700℃。
  6. 如申請專利範圍第1至5項中任一項之基板保持機構，其中該台座之該密合區域的內側部分係構成為凹部之吸附面；
    進一步地具備：背側氣體供給機構，係將導熱用之背側氣體供給至該被處理基板與該吸附面之間的空間。
  7. 如申請專利範圍第6項之基板保持機構，其中該背側氣體供給機構係將背側氣體之氣壓設定在20~100Torr。
  8. 如申請專利範圍第1至7項中任一項之基板保持機構，其中該吸附電極係作為相對於電漿之接地電極來發揮功能。
  9. 如申請專利範圍第1至8項中任一項之基板保持機構，其中構成該台座之介電體在成膜溫度中之體積電阻率係1×109~1×1012Ω．cm左右。
  10. 如申請專利範圍第9項之基板保持機構，其中該介電體係AlN。
  11. 如申請專利範圍第1至10項中任一項之基板保持機構，其中從該吸附電極到被該台座所吸附之該被處理基板的吸附面之距離係0.5~1.5mm。
  12. 如申請專利範圍第1至11項中任一項之基板保持機構，其中該吸附電極與形成在較該台座之表面的該密合區域要靠外側的導電性沉積膜之間的距離會較從該吸附電極到被吸附於該台座之該被處理基板的吸附面之距離要大。
  13. 如申請專利範圍第12項之基板保持機構，其係在該吸附電極之外側進一步地具有：輔助電極，係使得與該導電性沉積膜之間的距離會較從該吸附電極到被吸附於該台座之該被處理基板的吸附面之距離要大，且用以讓電漿擴散。
  14. 如申請專利範圍第1至13項中任一項之基板保持機構，其係進一步地具備：支撐構件，係以延伸至下方的方式來被安裝在該台座之底面的內面側中央。
  15. 一種成膜裝置，係藉由電漿CVD或電漿ALD來成膜出導電性膜之成膜裝置，具備：
    腔室，係進行成膜處理；
    如申請專利範圍第1至14項之基板保持機構，係設置於該腔室內；
    氣體導入部，係將用以成膜出該導電性膜之氣體導入至該腔室內；
    電漿生成機構，係在該腔室內生成電漿；以及
    排氣機構，係將該腔室內排氣。
  16. 如申請專利範圍第15項之成膜裝置，其中該氣體導入部係具有將氣體噴淋狀地導入至該腔室內之噴淋頭；
    該電漿生成機構係具有將高頻電力施加至該噴淋頭之高頻電源。
  17. 如申請專利範圍第15或16項之成膜裝置，其中作為用以成膜出該導電性膜之氣體係使用Ti原料氣體及還原氣體，而成膜出Ti膜來作為導電性膜。
  18. 如申請專利範圍第17項之成膜裝置，其中作為該Ti原料氣體係使用TiCl4氣體，作為該還原氣體係使用H2氣體。
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JP6688172B2 (ja) * 2016-06-24 2020-04-28 東京エレクトロン株式会社 基板処理システムおよび方法
KR102112703B1 (ko) * 2016-11-29 2020-05-21 주식회사 원익아이피에스 플라즈마 방식에 의한 박막 증착 방법
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