JP3984090B2 - 強誘電体メモリ装置 - Google Patents

強誘電体メモリ装置 Download PDF

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Publication number
JP3984090B2
JP3984090B2 JP2002099065A JP2002099065A JP3984090B2 JP 3984090 B2 JP3984090 B2 JP 3984090B2 JP 2002099065 A JP2002099065 A JP 2002099065A JP 2002099065 A JP2002099065 A JP 2002099065A JP 3984090 B2 JP3984090 B2 JP 3984090B2
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JP
Japan
Prior art keywords
cell
block
line
plate line
bit line
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002099065A
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English (en)
Japanese (ja)
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JP2003297078A (ja
JP2003297078A5 (enExample
Inventor
大三郎 高島
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Toshiba Corp
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Toshiba Corp
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Priority to JP2002099065A priority Critical patent/JP3984090B2/ja
Priority to US10/403,076 priority patent/US6934177B2/en
Publication of JP2003297078A publication Critical patent/JP2003297078A/ja
Publication of JP2003297078A5 publication Critical patent/JP2003297078A5/ja
Application granted granted Critical
Publication of JP3984090B2 publication Critical patent/JP3984090B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP2002099065A 2002-04-01 2002-04-01 強誘電体メモリ装置 Expired - Fee Related JP3984090B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002099065A JP3984090B2 (ja) 2002-04-01 2002-04-01 強誘電体メモリ装置
US10/403,076 US6934177B2 (en) 2002-04-01 2003-04-01 Ferroelectric memory device and read control method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002099065A JP3984090B2 (ja) 2002-04-01 2002-04-01 強誘電体メモリ装置

Publications (3)

Publication Number Publication Date
JP2003297078A JP2003297078A (ja) 2003-10-17
JP2003297078A5 JP2003297078A5 (enExample) 2005-06-30
JP3984090B2 true JP3984090B2 (ja) 2007-09-26

Family

ID=29388073

Family Applications (1)

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JP2002099065A Expired - Fee Related JP3984090B2 (ja) 2002-04-01 2002-04-01 強誘電体メモリ装置

Country Status (2)

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US (1) US6934177B2 (enExample)
JP (1) JP3984090B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4326226B2 (ja) * 2003-01-20 2009-09-02 Ｏｋｉセミコンダクタ株式会社 半導体集積回路
JP3940728B2 (ja) * 2004-04-09 2007-07-04 株式会社東芝 半導体記憶装置
JP3917604B2 (ja) * 2004-05-17 2007-05-23 株式会社東芝 半導体記憶装置
JP4149979B2 (ja) * 2004-09-16 2008-09-17 株式会社東芝 強誘電体ランダムアクセスメモリ
KR100562646B1 (ko) * 2004-12-22 2006-03-20 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
JP2008102982A (ja) * 2006-10-17 2008-05-01 Toshiba Corp 強誘電体メモリ
JP2008108355A (ja) * 2006-10-25 2008-05-08 Toshiba Corp 強誘電体半導体記憶装置及び強誘電体半導体記憶装置の読み出し方法
US8125829B2 (en) * 2008-05-02 2012-02-28 Micron Technology, Inc. Biasing system and method
JP2010033624A (ja) * 2008-07-25 2010-02-12 Toshiba Corp 半導体記憶装置
WO2018044486A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
WO2018044485A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Ferroelectric memory cells
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US11062763B2 (en) * 2019-04-09 2021-07-13 Micron Technology, Inc. Memory array with multiplexed digit lines

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144583A (en) * 1989-01-09 1992-09-01 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device with twisted bit-line structure
JP3617615B2 (ja) * 1999-11-08 2005-02-09 シャープ株式会社 強誘電体記憶装置
JP3913451B2 (ja) * 2000-08-23 2007-05-09 株式会社東芝 半導体記憶装置
JP4040243B2 (ja) * 2000-09-08 2008-01-30 株式会社東芝 強誘電体メモリ
US6522569B2 (en) * 2000-09-20 2003-02-18 Kabushiki Kaisha Toshiba Semiconductor memory device
KR100489357B1 (ko) * 2002-08-08 2005-05-16 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 셀 어레이와, 그의 구동장치 및 방법

Also Published As

Publication number Publication date
US20040013017A1 (en) 2004-01-22
JP2003297078A (ja) 2003-10-17
US6934177B2 (en) 2005-08-23

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