JP3983949B2 - 研磨用酸化セリウムスラリー、その製造法及び研磨方法 - Google Patents

研磨用酸化セリウムスラリー、その製造法及び研磨方法 Download PDF

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Publication number
JP3983949B2
JP3983949B2 JP33110799A JP33110799A JP3983949B2 JP 3983949 B2 JP3983949 B2 JP 3983949B2 JP 33110799 A JP33110799 A JP 33110799A JP 33110799 A JP33110799 A JP 33110799A JP 3983949 B2 JP3983949 B2 JP 3983949B2
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JP
Japan
Prior art keywords
cerium oxide
slurry
polishing
conductivity
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33110799A
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English (en)
Japanese (ja)
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JP2000239654A5 (enExample
JP2000239654A (ja
Inventor
高徳 貴堂
正幸 三林
史雄 辻野
景隆 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP33110799A priority Critical patent/JP3983949B2/ja
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to AT99959933T priority patent/ATE288949T1/de
Priority to ES99959933T priority patent/ES2235540T3/es
Priority to DE69923666T priority patent/DE69923666T2/de
Priority to TW088122526A priority patent/TW531555B/zh
Priority to PCT/JP1999/007166 priority patent/WO2000037578A1/en
Priority to KR1020007009048A priority patent/KR100359287B1/ko
Priority to EP99959933A priority patent/EP1056816B1/en
Priority to US09/578,481 priority patent/US6478836B1/en
Publication of JP2000239654A publication Critical patent/JP2000239654A/ja
Priority to US09/968,846 priority patent/US6387139B1/en
Publication of JP2000239654A5 publication Critical patent/JP2000239654A5/ja
Application granted granted Critical
Publication of JP3983949B2 publication Critical patent/JP3983949B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP33110799A 1998-12-21 1999-11-22 研磨用酸化セリウムスラリー、その製造法及び研磨方法 Expired - Lifetime JP3983949B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP33110799A JP3983949B2 (ja) 1998-12-21 1999-11-22 研磨用酸化セリウムスラリー、その製造法及び研磨方法
EP99959933A EP1056816B1 (en) 1998-12-21 1999-12-21 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
DE69923666T DE69923666T2 (de) 1998-12-21 1999-12-21 Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung
TW088122526A TW531555B (en) 1998-12-21 1999-12-21 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
PCT/JP1999/007166 WO2000037578A1 (en) 1998-12-21 1999-12-21 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
KR1020007009048A KR100359287B1 (ko) 1998-12-21 1999-12-21 연마용 세륨 옥사이드 슬러리, 그 슬러리의 제조 방법 및슬러리를 이용한 연마 방법
AT99959933T ATE288949T1 (de) 1998-12-21 1999-12-21 Aufschlämmung von ceriumoxid zum polieren, verfahren zur herstellung dieser aufschlämmung und verfahren zum polieren mit dieser aufschlämmung
ES99959933T ES2235540T3 (es) 1998-12-21 1999-12-21 Suspension de oxido de cerio para pulir, procedimiento para perparar la suspension y procedimiento para pulir usando la suspension.
US09/578,481 US6478836B1 (en) 1998-12-21 2000-05-26 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
US09/968,846 US6387139B1 (en) 1998-12-21 2001-10-03 Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP36270798 1998-12-21
JP10-362707 1998-12-21
US13637199P 1999-05-26 1999-05-26
JP33110799A JP3983949B2 (ja) 1998-12-21 1999-11-22 研磨用酸化セリウムスラリー、その製造法及び研磨方法

Publications (3)

Publication Number Publication Date
JP2000239654A JP2000239654A (ja) 2000-09-05
JP2000239654A5 JP2000239654A5 (enExample) 2005-07-28
JP3983949B2 true JP3983949B2 (ja) 2007-09-26

Family

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Family Applications (1)

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JP33110799A Expired - Lifetime JP3983949B2 (ja) 1998-12-21 1999-11-22 研磨用酸化セリウムスラリー、その製造法及び研磨方法

Country Status (8)

Country Link
US (2) US6478836B1 (enExample)
EP (1) EP1056816B1 (enExample)
JP (1) JP3983949B2 (enExample)
AT (1) ATE288949T1 (enExample)
DE (1) DE69923666T2 (enExample)
ES (1) ES2235540T3 (enExample)
TW (1) TW531555B (enExample)
WO (1) WO2000037578A1 (enExample)

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WO2000039843A1 (en) * 1998-12-25 2000-07-06 Hitachi Chemical Company, Ltd. Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate
WO2001000744A1 (en) * 1999-06-28 2001-01-04 Nissan Chemical Industries, Ltd. Abrasive compound for glass hard disk platter
CN1177012C (zh) 2000-10-02 2004-11-24 三井金属鉱业株式会社 铈基磨料和铈基磨料的制造方法
US7037352B2 (en) * 2000-12-12 2006-05-02 Showa Denko Kabushiki Kaisha Polishing particle and method for producing polishing particle
EP1369906B1 (en) * 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
TWI272249B (en) * 2001-02-27 2007-02-01 Nissan Chemical Ind Ltd Crystalline ceric oxide sol and process for producing the same
JP2002346912A (ja) * 2001-05-18 2002-12-04 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
KR100575442B1 (ko) * 2001-11-16 2006-05-03 쇼와 덴코 가부시키가이샤 세륨계 연마재 및 세륨계 연마재 슬러리
US7666239B2 (en) * 2001-11-16 2010-02-23 Ferro Corporation Hydrothermal synthesis of cerium-titanium oxide for use in CMP
KR100477939B1 (ko) * 2002-04-15 2005-03-18 주식회사 엘지화학 단결정 산화세륨 분말의 제조방법
JP2004066384A (ja) * 2002-08-06 2004-03-04 Kaoru Umeya ペースト状研磨工具及び研磨方法
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
US20080219130A1 (en) * 2003-08-14 2008-09-11 Mempile Inc. C/O Phs Corporate Services, Inc. Methods and Apparatus for Formatting and Tracking Information for Three-Dimensional Storage Medium
JP4913409B2 (ja) 2003-09-12 2012-04-11 日立化成工業株式会社 セリウム塩、その製造方法、酸化セリウム及びセリウム系研磨剤
JP2005138197A (ja) * 2003-11-04 2005-06-02 Fujimi Inc 研磨用組成物及び研磨方法
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP4546071B2 (ja) * 2003-12-10 2010-09-15 パナソニック株式会社 半導体装置の製造方法
TWI334882B (en) 2004-03-12 2010-12-21 K C Tech Co Ltd Polishing slurry and method of producing same
TWI370843B (en) * 2004-03-16 2012-08-21 Samsung Corning Prec Mat Co Ceria slurry for polishing semiconductor thin layer
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
TWI273632B (en) * 2004-07-28 2007-02-11 K C Tech Co Ltd Polishing slurry, method of producing same, and method of polishing substrate
TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
JP5013671B2 (ja) * 2004-12-28 2012-08-29 日揮触媒化成株式会社 金属酸化物ゾルの製造方法および金属酸化物ゾル
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
AT502308B1 (de) * 2005-07-20 2010-03-15 Treibacher Ind Ag Glasschleifmittel auf ceroxidbasis und verfahren zu dessen herstellung
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
KR101103748B1 (ko) * 2005-09-27 2012-01-06 삼성코닝정밀소재 주식회사 반도체 박막 연마용 산화세륨 슬러리 및 이의 제조방법
TW200730243A (en) * 2005-12-15 2007-08-16 Mitsui Mining & Smelting Co Oxygen scavenger and method for producing the same
JP5237542B2 (ja) * 2006-10-03 2013-07-17 三井金属鉱業株式会社 酸化セリウム系研摩材
WO2009056153A1 (en) * 2007-10-30 2009-05-07 Pall Corporation Method and system for manufacturing wafer-like slices from a substrate material
JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板
FI20095088L (fi) * 2009-02-02 2010-08-03 Lauri Ylikorpi Päällysteen poistoaine
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
CN104130714B (zh) * 2014-07-01 2015-10-28 蚌埠市高华电子有限公司 一种含有磨料的适用于金属的混合抛光液及其制备方法
EP3020689A1 (en) 2014-11-12 2016-05-18 Rhodia Operations Cerium oxide particles and method for production thereof

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JPS629739A (ja) * 1985-07-05 1987-01-17 Nissan Chem Ind Ltd 精密鋳型作製用結合剤
FR2604443A1 (fr) * 1986-09-26 1988-04-01 Rhone Poulenc Chimie Composition de polissage a base de cerium destinee au polissage des verres organiques
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JP3311203B2 (ja) * 1995-06-13 2002-08-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法

Also Published As

Publication number Publication date
DE69923666T2 (de) 2005-11-17
ES2235540T3 (es) 2005-07-01
ATE288949T1 (de) 2005-02-15
EP1056816B1 (en) 2005-02-09
US20020032989A1 (en) 2002-03-21
DE69923666D1 (de) 2005-03-17
TW531555B (en) 2003-05-11
WO2000037578A1 (en) 2000-06-29
EP1056816A1 (en) 2000-12-06
JP2000239654A (ja) 2000-09-05
US6478836B1 (en) 2002-11-12
US6387139B1 (en) 2002-05-14

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