JP3966682B2 - 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法 - Google Patents

結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法 Download PDF

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JP3966682B2
JP3966682B2 JP2000318723A JP2000318723A JP3966682B2 JP 3966682 B2 JP3966682 B2 JP 3966682B2 JP 2000318723 A JP2000318723 A JP 2000318723A JP 2000318723 A JP2000318723 A JP 2000318723A JP 3966682 B2 JP3966682 B2 JP 3966682B2
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reaction vessel
group iii
nitrogen
alkali metal
crystal
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JP2000318723A
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Japanese (ja)
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JP2002128586A5 (enrdf_load_stackoverflow
JP2002128586A (ja
Inventor
正二 皿山
昌彦 島田
久典 山根
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Ricoh Co Ltd
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Ricoh Co Ltd
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Priority to JP2000318723A priority Critical patent/JP3966682B2/ja
Priority to US09/981,848 priority patent/US6780239B2/en
Publication of JP2002128586A publication Critical patent/JP2002128586A/ja
Priority to US10/878,904 priority patent/US20050026318A1/en
Publication of JP2002128586A5 publication Critical patent/JP2002128586A5/ja
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Publication of JP3966682B2 publication Critical patent/JP3966682B2/ja
Priority to US12/139,230 priority patent/US8562737B2/en
Priority to US13/966,801 priority patent/US20130330264A1/en
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
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JP2000318723A 2000-10-19 2000-10-19 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法 Expired - Lifetime JP3966682B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000318723A JP3966682B2 (ja) 2000-10-19 2000-10-19 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法
US09/981,848 US6780239B2 (en) 2000-10-19 2001-10-16 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US10/878,904 US20050026318A1 (en) 2000-10-19 2004-06-28 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US12/139,230 US8562737B2 (en) 2000-10-19 2008-06-13 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device
US13/966,801 US20130330264A1 (en) 2000-10-19 2013-08-14 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device

Applications Claiming Priority (1)

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JP2000318723A JP3966682B2 (ja) 2000-10-19 2000-10-19 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法

Related Child Applications (1)

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JP2007074497A Division JP4768656B2 (ja) 2007-03-22 2007-03-22 結晶成長装置

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JP2002128586A JP2002128586A (ja) 2002-05-09
JP2002128586A5 JP2002128586A5 (enrdf_load_stackoverflow) 2006-06-29
JP3966682B2 true JP3966682B2 (ja) 2007-08-29

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007186420A (ja) * 2007-03-22 2007-07-26 Ricoh Co Ltd 結晶成長方法および結晶成長装置およびｉｉｉ族窒化物結晶およびｉｉｉ族窒化物半導体デバイス
JP2011088822A (ja) * 2011-01-28 2011-05-06 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の製造方法
US8337798B2 (en) 2006-10-02 2012-12-25 Ricoh Company, Ltd. Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
US8562737B2 (en) 2000-10-19 2013-10-22 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220311B2 (en) 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
JP4560287B2 (ja) * 2002-11-08 2010-10-13 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US7261775B2 (en) 2003-01-29 2007-08-28 Ricoh Company, Ltd. Methods of growing a group III nitride crystal
JP4603498B2 (ja) 2005-03-14 2010-12-22 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法及び製造装置
KR101235449B1 (ko) * 2005-05-12 2013-02-20 가부시키가이샤 리코 Ⅲ족 질화물 결정의 제조 방법, ⅲ족 질화물 결정의 제조장치 및 ⅲ족 질화물 결정
JP4192220B2 (ja) 2005-08-10 2008-12-10 株式会社リコー 結晶成長装置および製造方法
EP1775356A3 (en) 2005-10-14 2009-12-16 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
JP4732146B2 (ja) * 2005-11-21 2011-07-27 株式会社リコー 結晶成長装置および製造方法
JP4856934B2 (ja) 2005-11-21 2012-01-18 株式会社リコー ＧａＮ結晶
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP5108641B2 (ja) * 2008-06-12 2012-12-26 住友電気工業株式会社 ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8562737B2 (en) 2000-10-19 2013-10-22 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device
US8337798B2 (en) 2006-10-02 2012-12-25 Ricoh Company, Ltd. Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
US8829530B2 (en) 2006-10-02 2014-09-09 Ricoh Company, Ltd. Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
JP2007186420A (ja) * 2007-03-22 2007-07-26 Ricoh Co Ltd 結晶成長方法および結晶成長装置およびｉｉｉ族窒化物結晶およびｉｉｉ族窒化物半導体デバイス
JP2011088822A (ja) * 2011-01-28 2011-05-06 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の製造方法

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