JP3961651B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP3961651B2
JP3961651B2 JP34640497A JP34640497A JP3961651B2 JP 3961651 B2 JP3961651 B2 JP 3961651B2 JP 34640497 A JP34640497 A JP 34640497A JP 34640497 A JP34640497 A JP 34640497A JP 3961651 B2 JP3961651 B2 JP 3961651B2
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JP
Japan
Prior art keywords
memory cell
transistor
cell
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP34640497A
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English (en)
Japanese (ja)
Other versions
JPH11177036A (ja
JPH11177036A5 (enExample
Inventor
大三郎 高島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP34640497A priority Critical patent/JP3961651B2/ja
Priority to US09/208,831 priority patent/US6094370A/en
Publication of JPH11177036A publication Critical patent/JPH11177036A/ja
Priority to US09/609,058 priority patent/US6320782B1/en
Priority to US09/976,154 priority patent/US6473331B2/en
Priority to US10/225,239 priority patent/US6657882B2/en
Priority to US10/691,706 priority patent/US6826072B2/en
Publication of JPH11177036A5 publication Critical patent/JPH11177036A5/ja
Priority to US10/963,820 priority patent/US7254051B2/en
Application granted granted Critical
Publication of JP3961651B2 publication Critical patent/JP3961651B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
JP34640497A 1996-06-10 1997-12-16 半導体記憶装置 Expired - Fee Related JP3961651B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP34640497A JP3961651B2 (ja) 1997-12-16 1997-12-16 半導体記憶装置
US09/208,831 US6094370A (en) 1996-06-10 1998-12-10 Semiconductor memory device and various systems mounting them
US09/609,058 US6320782B1 (en) 1996-06-10 2000-06-30 Semiconductor memory device and various systems mounting them
US09/976,154 US6473331B2 (en) 1996-06-10 2001-10-15 Semiconductor memory device and various systems mounting them
US10/225,239 US6657882B2 (en) 1996-06-10 2002-08-22 Semiconductor memory device and various systems mounting them
US10/691,706 US6826072B2 (en) 1996-06-10 2003-10-24 Semiconductor memory device and various systems mounting them
US10/963,820 US7254051B2 (en) 1996-06-10 2004-10-14 Semiconductor memory device and various systems mounting them

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34640497A JP3961651B2 (ja) 1997-12-16 1997-12-16 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH11177036A JPH11177036A (ja) 1999-07-02
JPH11177036A5 JPH11177036A5 (enExample) 2004-07-29
JP3961651B2 true JP3961651B2 (ja) 2007-08-22

Family

ID=18383201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34640497A Expired - Fee Related JP3961651B2 (ja) 1996-06-10 1997-12-16 半導体記憶装置

Country Status (1)

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JP (1) JP3961651B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4421009B2 (ja) 1999-06-02 2010-02-24 株式会社東芝 強誘電体メモリ
JP2001319472A (ja) 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
CN1229867C (zh) 2000-07-13 2005-11-30 松下电器产业株式会社 半导体存储装置的驱动方法
CN1225024C (zh) 2000-07-25 2005-10-26 松下电器产业株式会社 半导体存储装置及其驱动方法
JP2002083493A (ja) * 2000-09-05 2002-03-22 Toshiba Corp 半導体記憶装置
JP2002094017A (ja) * 2000-09-13 2002-03-29 Toshiba Corp 半導体記憶装置及び半導体記憶装置製造用マスク
JP2002110932A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体装置及びその製造方法
JP4771610B2 (ja) * 2001-04-13 2011-09-14 富士通セミコンダクター株式会社 メモリ回路及びその試験方法
JP3966718B2 (ja) * 2001-11-28 2007-08-29 富士通株式会社 半導体記憶装置
JP4607924B2 (ja) * 2003-09-22 2011-01-05 株式会社東芝 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変ｌｓｉ装置、ｉｃカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置
US7269048B2 (en) 2003-09-22 2007-09-11 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
JP4074279B2 (ja) 2003-09-22 2008-04-09 株式会社東芝 半導体集積回路装置、デジタルカメラ、デジタルビデオカメラ、コンピュータシステム、携帯コンピュータシステム、論理可変ｌｓｉ装置、ｉｃカード、ナビゲーションシステム、ロボット、画像表示装置、光ディスク記憶装置
JP3866707B2 (ja) 2003-09-29 2007-01-10 株式会社東芝 半導体記憶装置およびデータの読み出し方法
JP4189378B2 (ja) * 2004-12-27 2008-12-03 株式会社東芝 強誘電体メモリ
JP2006332335A (ja) * 2005-05-26 2006-12-07 Toshiba Corp 半導体記憶装置
JP2006338370A (ja) 2005-06-02 2006-12-14 Toshiba Corp メモリシステム
JP2007018600A (ja) * 2005-07-07 2007-01-25 Toshiba Corp 半導体記憶装置
JP2007066448A (ja) 2005-08-31 2007-03-15 Toshiba Corp 強誘電体半導体記憶装置
JP4470889B2 (ja) 2006-01-25 2010-06-02 セイコーエプソン株式会社 分極転送デバイス、及びその転送制御方法
JP4745108B2 (ja) 2006-04-06 2011-08-10 株式会社東芝 不揮発性半導体記憶装置
JP2008182083A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体記憶装置及びその製造方法
JP4491000B2 (ja) 2007-08-17 2010-06-30 株式会社東芝 メモリシステム
JP4660564B2 (ja) 2008-03-11 2011-03-30 株式会社東芝 半導体記憶装置
JP5060413B2 (ja) 2008-07-15 2012-10-31 株式会社東芝 半導体記憶装置
JP2010080514A (ja) * 2008-09-24 2010-04-08 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPH11177036A (ja) 1999-07-02

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