JP3958080B2 - プラズマ処理装置内の被洗浄部材の洗浄方法 - Google Patents

プラズマ処理装置内の被洗浄部材の洗浄方法 Download PDF

Info

Publication number
JP3958080B2
JP3958080B2 JP2002073957A JP2002073957A JP3958080B2 JP 3958080 B2 JP3958080 B2 JP 3958080B2 JP 2002073957 A JP2002073957 A JP 2002073957A JP 2002073957 A JP2002073957 A JP 2002073957A JP 3958080 B2 JP3958080 B2 JP 3958080B2
Authority
JP
Japan
Prior art keywords
cleaning
cleaned
plasma processing
processing apparatus
physical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002073957A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003273078A (ja
JP2003273078A5 (https=
Inventor
均 高瀬
将之 長山
康至 三橋
博之 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002073957A priority Critical patent/JP3958080B2/ja
Priority to US10/385,571 priority patent/US6790289B2/en
Priority to CN03119377.3A priority patent/CN100533673C/zh
Publication of JP2003273078A publication Critical patent/JP2003273078A/ja
Priority to US10/854,181 priority patent/US20040216769A1/en
Publication of JP2003273078A5 publication Critical patent/JP2003273078A5/ja
Application granted granted Critical
Publication of JP3958080B2 publication Critical patent/JP3958080B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24CABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/003Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2002073957A 2002-03-18 2002-03-18 プラズマ処理装置内の被洗浄部材の洗浄方法 Expired - Lifetime JP3958080B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002073957A JP3958080B2 (ja) 2002-03-18 2002-03-18 プラズマ処理装置内の被洗浄部材の洗浄方法
US10/385,571 US6790289B2 (en) 2002-03-18 2003-03-12 Method of cleaning a plasma processing apparatus
CN03119377.3A CN100533673C (zh) 2002-03-18 2003-03-14 清洗等离子加工装置的方法
US10/854,181 US20040216769A1 (en) 2002-03-18 2004-05-27 Method of cleaning a plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002073957A JP3958080B2 (ja) 2002-03-18 2002-03-18 プラズマ処理装置内の被洗浄部材の洗浄方法

Publications (3)

Publication Number Publication Date
JP2003273078A JP2003273078A (ja) 2003-09-26
JP2003273078A5 JP2003273078A5 (https=) 2005-09-08
JP3958080B2 true JP3958080B2 (ja) 2007-08-15

Family

ID=28035275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002073957A Expired - Lifetime JP3958080B2 (ja) 2002-03-18 2002-03-18 プラズマ処理装置内の被洗浄部材の洗浄方法

Country Status (3)

Country Link
US (2) US6790289B2 (https=)
JP (1) JP3958080B2 (https=)
CN (1) CN100533673C (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
US20050048876A1 (en) * 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
US20090126760A1 (en) * 2005-01-12 2009-05-21 Boc, Inc. System for cleaning a surface using crogenic aerosol and fluid reactant
US7648582B2 (en) * 2005-12-23 2010-01-19 Lam Research Corporation Cleaning of electrostatic chucks using ultrasonic agitation and applied electric fields
CN100446877C (zh) * 2006-02-13 2008-12-31 庄添财 自动清洗方法及自动清洗机
US7544254B2 (en) * 2006-12-14 2009-06-09 Varian Semiconductor Equipment Associates, Inc. System and method for cleaning an ion implanter
US7767028B2 (en) 2007-03-14 2010-08-03 Lam Research Corporation Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses
US7578889B2 (en) * 2007-03-30 2009-08-25 Lam Research Corporation Methodology for cleaning of surface metal contamination from electrode assemblies
US8292698B1 (en) 2007-03-30 2012-10-23 Lam Research Corporation On-line chamber cleaning using dry ice blasting
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
JP2010529670A (ja) * 2007-06-07 2010-08-26 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体適用のための非可燃性溶媒
KR100883205B1 (ko) 2007-09-28 2009-02-20 (주)코리아스타텍 패턴 공정의 모재 지지용 지그 세정방법과 그 세정장치
JP2009255277A (ja) * 2008-03-19 2009-11-05 Tokyo Electron Ltd 表面処理方法、シャワーヘッド部、処理容器及びこれらを用いた処理装置
JP5249639B2 (ja) * 2008-06-09 2013-07-31 日本発條株式会社 ヘッドサスペンションの再生方法及び製造方法、並びにワークの再生方法
JP4829937B2 (ja) 2008-07-28 2011-12-07 東京エレクトロン株式会社 半導体製造装置のパーツに付着した堆積物またはパーティクルを除去する洗浄装置及び洗浄方法
DE102009044011A1 (de) 2009-09-15 2011-03-24 Paul Hettich Gmbh & Co. Kg Verfahren zum Herstellen einer beschichteten Auszugsführung
JP5896915B2 (ja) * 2009-12-18 2016-03-30 ラム リサーチ コーポレーションLam Research Corporation プラズマチャンバで使用される上方電極から表面金属汚染を洗浄するための方法
WO2012082902A1 (en) * 2010-12-15 2012-06-21 Sulzer Metco (Us), Inc. Pressure based liquid feed system for suspension plasma spray coatings
KR101436310B1 (ko) 2012-10-04 2014-09-02 주식회사 알지비하이텍 로봇아암 연결용 디퓨져 세정장치
US9387521B2 (en) * 2012-12-05 2016-07-12 Lam Research Corporation Method of wet cleaning aluminum chamber parts
KR20160057966A (ko) 2014-11-14 2016-05-24 가부시끼가이샤 도시바 처리 장치, 노즐 및 다이싱 장치
JP6545511B2 (ja) * 2015-04-10 2019-07-17 株式会社東芝 処理装置
US20180311707A1 (en) * 2017-05-01 2018-11-01 Lam Research Corporation In situ clean using high vapor pressure aerosols
JP6899252B2 (ja) * 2017-05-10 2021-07-07 株式会社ディスコ 加工方法
CN108081151B (zh) * 2017-12-04 2020-04-24 中国人民解放军陆军装甲兵学院 一种金属零件表面无损物理清洗方法
GB201720265D0 (en) * 2017-12-05 2018-01-17 Semblant Ltd Method and apparatus for cleaning a plasma processing apparatus
CN108573855B (zh) * 2018-04-08 2021-01-01 苏州珮凯科技有限公司 半导体8寸晶元薄膜制程的TD/DRM工艺的Al/Al2O3件的再生方法
CN108441925A (zh) * 2018-04-18 2018-08-24 北京理贝尔生物工程研究所有限公司 一种新型阳极氧化工艺预处理方法
DE102018109217A1 (de) * 2018-04-18 2019-10-24 Khs Corpoplast Gmbh Vorrichtung zum Beschichten von Hohlkörpern mit mindestens einer Beschichtungsstation
WO2020096091A1 (ko) * 2018-11-09 2020-05-14 주식회사 그리너지 리튬메탈 음극의 표면처리방법, 표면처리된 리튬메탈 음극 및 이를 포함하는 리튬금속전지
CN111298608B (zh) * 2020-03-03 2021-03-23 云南大学 一种用于等离子体降解VOCs装置的自清洁防火系统
CN114308798B (zh) * 2020-10-10 2023-03-31 中国科学院微电子研究所 一种清洗组件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3599871A (en) * 1969-07-08 1971-08-17 Goodrich Co B F Jet spray tank cleaner
FR2504563B1 (fr) * 1981-04-22 1985-11-08 Engineering Textile Plastique Procede de tricotage d'un article a refermer sur lui-meme, et machine a tricoter pour la mise en oeuvre du procede
US5109562A (en) * 1989-08-30 1992-05-05 C.V.D. System Cleaners Corporation Chemical vapor deposition system cleaner
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5108512A (en) * 1991-09-16 1992-04-28 Hemlock Semiconductor Corporation Cleaning of CVD reactor used in the production of polycrystalline silicon by impacting with carbon dioxide pellets
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US6004400A (en) * 1997-07-09 1999-12-21 Phillip W. Bishop Carbon dioxide cleaning process
US6197123B1 (en) * 1997-12-18 2001-03-06 Texas Instruments Incorporated Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
JP3030287B1 (ja) 1998-10-09 2000-04-10 株式会社協同インターナショナル 成膜装置のクリーニング方法、スパッタリングターゲットのクリーニング方法及びこれらに使用するクリーニング装置
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6394107B1 (en) * 2001-04-24 2002-05-28 3M Innovative Properties Company Use of fluorinated ketones as wet cleaning agents for vapor reactors and vapor reactor components
JP2003031535A (ja) * 2001-07-11 2003-01-31 Mitsubishi Electric Corp 半導体製造装置の超音波洗浄方法
US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
JP3876167B2 (ja) * 2002-02-13 2007-01-31 川崎マイクロエレクトロニクス株式会社 洗浄方法および半導体装置の製造方法

Also Published As

Publication number Publication date
CN100533673C (zh) 2009-08-26
US20040216769A1 (en) 2004-11-04
US6790289B2 (en) 2004-09-14
CN1445826A (zh) 2003-10-01
JP2003273078A (ja) 2003-09-26
US20030172952A1 (en) 2003-09-18

Similar Documents

Publication Publication Date Title
JP3958080B2 (ja) プラズマ処理装置内の被洗浄部材の洗浄方法
CN1296977C (zh) 绝缘膜刻蚀装置
TWI645468B (zh) 清洗方法及基板處理裝置
KR100782621B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
KR100948984B1 (ko) 기판 탑재대, 기판 탑재대의 제조 방법, 기판 처리 장치,유체 공급기구
KR100913847B1 (ko) 기판 탑재대의 제조 방법
JP4642809B2 (ja) プラズマ処理方法及びプラズマ処理装置
US7628864B2 (en) Substrate cleaning apparatus and method
US8129285B2 (en) Substrate processing system
US7892361B2 (en) In-chamber member, a cleaning method therefor and a plasma processing apparatus
JP3905462B2 (ja) プラズマ処理方法およびプラズマ処理装置
JP4469364B2 (ja) 絶縁膜エッチング装置
JPH0974129A (ja) プラズマ処理方法
CN100388430C (zh) 基板清洗装置和基板清洗方法
JPH08195382A (ja) 半導体製造装置
JP2010093293A (ja) 絶縁膜エッチング装置
JP2001522127A (ja) ゲート電極形成中の重合体粒子の空間的に均一な付着
JPH0851098A (ja) 半導体処理装置
JPH05226291A (ja) プラズマ処理方法
JP2963227B2 (ja) プラズマ処理装置
JP2885150B2 (ja) ドライエッチング装置のドライクリーニング方法
JPH07111259A (ja) プラズマ処理装置
JP2010080990A (ja) 絶縁膜エッチング装置
JP2010080989A (ja) 絶縁膜エッチング装置
JP2010080986A (ja) 絶縁膜エッチング装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050310

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060627

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060823

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070413

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070508

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070509

R150 Certificate of patent or registration of utility model

Ref document number: 3958080

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130518

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term