CN100533673C - 清洗等离子加工装置的方法 - Google Patents

清洗等离子加工装置的方法 Download PDF

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Publication number
CN100533673C
CN100533673C CN03119377.3A CN03119377A CN100533673C CN 100533673 C CN100533673 C CN 100533673C CN 03119377 A CN03119377 A CN 03119377A CN 100533673 C CN100533673 C CN 100533673C
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CN
China
Prior art keywords
cleaned
sedimental
physics
cleaning
chemical
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Expired - Fee Related
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CN03119377.3A
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English (en)
Chinese (zh)
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CN1445826A (zh
Inventor
高濑均
长山将之
三桥康至
中山博之
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1445826A publication Critical patent/CN1445826A/zh
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Publication of CN100533673C publication Critical patent/CN100533673C/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN03119377.3A 2002-03-18 2003-03-14 清洗等离子加工装置的方法 Expired - Fee Related CN100533673C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002073957 2002-03-18
JP2002073957A JP3958080B2 (ja) 2002-03-18 2002-03-18 プラズマ処理装置内の被洗浄部材の洗浄方法

Publications (2)

Publication Number Publication Date
CN1445826A CN1445826A (zh) 2003-10-01
CN100533673C true CN100533673C (zh) 2009-08-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN03119377.3A Expired - Fee Related CN100533673C (zh) 2002-03-18 2003-03-14 清洗等离子加工装置的方法

Country Status (3)

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US (2) US6790289B2 (https=)
JP (1) JP3958080B2 (https=)
CN (1) CN100533673C (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
US20050048876A1 (en) * 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
US20090126760A1 (en) * 2005-01-12 2009-05-21 Boc, Inc. System for cleaning a surface using crogenic aerosol and fluid reactant
US7648582B2 (en) * 2005-12-23 2010-01-19 Lam Research Corporation Cleaning of electrostatic chucks using ultrasonic agitation and applied electric fields
CN100446877C (zh) * 2006-02-13 2008-12-31 庄添财 自动清洗方法及自动清洗机
US7544254B2 (en) * 2006-12-14 2009-06-09 Varian Semiconductor Equipment Associates, Inc. System and method for cleaning an ion implanter
US7767028B2 (en) 2007-03-14 2010-08-03 Lam Research Corporation Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses
US7578889B2 (en) * 2007-03-30 2009-08-25 Lam Research Corporation Methodology for cleaning of surface metal contamination from electrode assemblies
US8292698B1 (en) 2007-03-30 2012-10-23 Lam Research Corporation On-line chamber cleaning using dry ice blasting
US8221552B2 (en) * 2007-03-30 2012-07-17 Lam Research Corporation Cleaning of bonded silicon electrodes
JP2010529670A (ja) * 2007-06-07 2010-08-26 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 半導体適用のための非可燃性溶媒
KR100883205B1 (ko) 2007-09-28 2009-02-20 (주)코리아스타텍 패턴 공정의 모재 지지용 지그 세정방법과 그 세정장치
JP2009255277A (ja) * 2008-03-19 2009-11-05 Tokyo Electron Ltd 表面処理方法、シャワーヘッド部、処理容器及びこれらを用いた処理装置
JP5249639B2 (ja) * 2008-06-09 2013-07-31 日本発條株式会社 ヘッドサスペンションの再生方法及び製造方法、並びにワークの再生方法
JP4829937B2 (ja) 2008-07-28 2011-12-07 東京エレクトロン株式会社 半導体製造装置のパーツに付着した堆積物またはパーティクルを除去する洗浄装置及び洗浄方法
DE102009044011A1 (de) 2009-09-15 2011-03-24 Paul Hettich Gmbh & Co. Kg Verfahren zum Herstellen einer beschichteten Auszugsführung
JP5896915B2 (ja) * 2009-12-18 2016-03-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマチャンバで使用される上方電極から表面金属汚染を洗浄するための方法
WO2012082902A1 (en) * 2010-12-15 2012-06-21 Sulzer Metco (Us), Inc. Pressure based liquid feed system for suspension plasma spray coatings
KR101436310B1 (ko) 2012-10-04 2014-09-02 주식회사 알지비하이텍 로봇아암 연결용 디퓨져 세정장치
US9387521B2 (en) * 2012-12-05 2016-07-12 Lam Research Corporation Method of wet cleaning aluminum chamber parts
KR20160057966A (ko) 2014-11-14 2016-05-24 가부시끼가이샤 도시바 처리 장치, 노즐 및 다이싱 장치
JP6545511B2 (ja) * 2015-04-10 2019-07-17 株式会社東芝 処理装置
US20180311707A1 (en) * 2017-05-01 2018-11-01 Lam Research Corporation In situ clean using high vapor pressure aerosols
JP6899252B2 (ja) * 2017-05-10 2021-07-07 株式会社ディスコ 加工方法
CN108081151B (zh) * 2017-12-04 2020-04-24 中国人民解放军陆军装甲兵学院 一种金属零件表面无损物理清洗方法
GB201720265D0 (en) * 2017-12-05 2018-01-17 Semblant Ltd Method and apparatus for cleaning a plasma processing apparatus
CN108573855B (zh) * 2018-04-08 2021-01-01 苏州珮凯科技有限公司 半导体8寸晶元薄膜制程的TD/DRM工艺的Al/Al2O3件的再生方法
CN108441925A (zh) * 2018-04-18 2018-08-24 北京理贝尔生物工程研究所有限公司 一种新型阳极氧化工艺预处理方法
DE102018109217A1 (de) * 2018-04-18 2019-10-24 Khs Corpoplast Gmbh Vorrichtung zum Beschichten von Hohlkörpern mit mindestens einer Beschichtungsstation
WO2020096091A1 (ko) * 2018-11-09 2020-05-14 주식회사 그리너지 리튬메탈 음극의 표면처리방법, 표면처리된 리튬메탈 음극 및 이를 포함하는 리튬금속전지
CN111298608B (zh) * 2020-03-03 2021-03-23 云南大学 一种用于等离子体降解VOCs装置的自清洁防火系统
CN114308798B (zh) * 2020-10-10 2023-03-31 中国科学院微电子研究所 一种清洗组件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3599871A (en) * 1969-07-08 1971-08-17 Goodrich Co B F Jet spray tank cleaner
FR2504563B1 (fr) * 1981-04-22 1985-11-08 Engineering Textile Plastique Procede de tricotage d'un article a refermer sur lui-meme, et machine a tricoter pour la mise en oeuvre du procede
US5109562A (en) * 1989-08-30 1992-05-05 C.V.D. System Cleaners Corporation Chemical vapor deposition system cleaner
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5108512A (en) * 1991-09-16 1992-04-28 Hemlock Semiconductor Corporation Cleaning of CVD reactor used in the production of polycrystalline silicon by impacting with carbon dioxide pellets
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US6004400A (en) * 1997-07-09 1999-12-21 Phillip W. Bishop Carbon dioxide cleaning process
US6197123B1 (en) * 1997-12-18 2001-03-06 Texas Instruments Incorporated Method for cleaning a process chamber used for manufacturing substrates during nonproduction intervals
JP3030287B1 (ja) 1998-10-09 2000-04-10 株式会社協同インターナショナル 成膜装置のクリーニング方法、スパッタリングターゲットのクリーニング方法及びこれらに使用するクリーニング装置
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6394107B1 (en) * 2001-04-24 2002-05-28 3M Innovative Properties Company Use of fluorinated ketones as wet cleaning agents for vapor reactors and vapor reactor components
JP2003031535A (ja) * 2001-07-11 2003-01-31 Mitsubishi Electric Corp 半導体製造装置の超音波洗浄方法
US6554909B1 (en) * 2001-11-08 2003-04-29 Saint-Gobain Ceramics & Plastics, Inc. Process for cleaning components using cleaning media
JP3876167B2 (ja) * 2002-02-13 2007-01-31 川崎マイクロエレクトロニクス株式会社 洗浄方法および半導体装置の製造方法

Also Published As

Publication number Publication date
US20040216769A1 (en) 2004-11-04
US6790289B2 (en) 2004-09-14
CN1445826A (zh) 2003-10-01
JP2003273078A (ja) 2003-09-26
JP3958080B2 (ja) 2007-08-15
US20030172952A1 (en) 2003-09-18

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Granted publication date: 20090826