TWI840379B - 陶瓷塗層的調節方法 - Google Patents
陶瓷塗層的調節方法 Download PDFInfo
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- 238000005524 ceramic coating Methods 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000003750 conditioning effect Effects 0.000 title claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000003792 electrolyte Substances 0.000 claims abstract description 20
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 30
- 235000011089 carbon dioxide Nutrition 0.000 claims description 18
- 230000001105 regulatory effect Effects 0.000 claims description 12
- 238000005488 sandblasting Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000009835 boiling Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical group N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000009736 wetting Methods 0.000 claims description 2
- 239000007791 liquid phase Substances 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 239000007790 solid phase Substances 0.000 claims 1
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- 235000012431 wafers Nutrition 0.000 description 10
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- 239000011248 coating agent Substances 0.000 description 6
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- 239000000356 contaminant Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 235000011194 food seasoning agent Nutrition 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 150000003839 salts Chemical class 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002431 foraging effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- -1 halogen ions Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000007785 strong electrolyte Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
- B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C3/00—Abrasive blasting machines or devices; Plants
- B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H01J37/32—Gas-filled discharge tubes
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Abstract
提供一種用於電漿處理腔室中之部件上的陶瓷塗層的調節方法。該陶瓷塗層係用溶液來潤濕，其中該溶液係透過混合溶劑與電解質而形成，其中1%至10%之電解質於溶液中解離。陶瓷塗層係用顆粒進行噴砂。清洗該陶瓷塗層。
Description
本揭示內容係關於陶瓷塗層之調節方法。更具體地說，本揭示內容係關於用於電漿處理腔室中之部件的陶瓷塗層的調節方法。
[相關申請案之交互參照]
本申請案主張2018年7月3日申請之美國臨時專利申請案第62/693,604號的優先權，其出於所有目的而併於此作為參考。
為了使電漿處理腔室之部件具抗損性，使用陶瓷塗層以覆蓋電漿處理腔室的部件。對陶瓷塗層進行調節，以降低電漿處理期間之污染並保護其免受污染。
為達成前述內容且根據本揭示內容之目的，提供了一種用於電漿處理腔室中之部件上的陶瓷塗層的調節方法。用溶液潤濕該陶瓷塗層，其中該溶液係透過混合溶劑與電解質而形成，其中1%至10%之電解質於溶液中解離。用顆粒對陶瓷塗層進行噴砂。清洗該陶瓷塗層。
本揭示內容之此等及其他特徵將結合以下圖式而更加詳述於以下實施方式中。
現將參考隨附圖式中所說明的一些較佳實施例而詳細描述本揭示內容。在以下敘述中，提出許多具體細節以提供對於本揭示內容之徹底瞭解。然而，本領域技術人員將顯而易見，本揭示內容可在不具有此等具體細節之一些或全部的情況下加以實施。在其他情況下，為避免對本揭示內容造成不必要混淆，眾所周知的製程步驟及／或結構不再詳加描述。
圖1係用以調節陶瓷塗層之一實施例的流程圖。用溶劑與弱電解質之溶液來潤濕陶瓷塗層（步驟104）。用顆粒對陶瓷塗層進行噴砂（步驟108）。清洗陶瓷塗層（步驟112）。乾燥陶瓷塗層（步驟116）。
圖2A是部件204之橫剖面示意圖。該部件204具有帶陽極處理鋁（anodized aluminum）表面的鋁主體208。 陶瓷塗層212沉積於主體208之陽極處理鋁表面上。於此實例中，該陶瓷塗層212係氧化鋁（Al2
O3
）。
用溶劑與弱電解質之溶液來潤濕陶瓷塗層212（步驟104）。於此實施例中，該溶液係水溶劑與醋酸銨（NH4
Ac）電解質之混合物。該混合物形成0.1 M的NH4
Ac溶液。於此實施例中，使用噴霧器，透過噴塗陶瓷塗層來潤濕陶瓷塗層212（步驟104）。圖2B顯示陶瓷塗層212上之溶液216的潤濕層。
接著，在用溶液潤濕時，用顆粒對陶瓷塗層212進行噴砂（步驟108）。於此實例中，顆粒為乾冰顆粒。乾冰顆粒係凍結（固態）的二氧化碳（CO2
）。呈細屑形式的固體CO2
係與壓縮空氣結合使用作為噴擊氣體（blasting gas），以轟擊陶瓷塗層212。於一實施例中，陶瓷塗層212之固體CO2
乾冰調節為每平方英寸約20至約70磅（psi）。乾冰細屑係由通過裝有一系列旋轉刀片之進料斗的高純度固體塊或顆粒製成，其以0.5磅／分鐘至4磅／分鐘之間的速度進料。於一實施例中，使用乾冰顆粒之噴砂步驟係使用扇形分配噴嘴持續進行約30秒至約10分鐘，扇形分配噴嘴以大約1至12英寸的距離，從與陶瓷塗層212呈淺掃角到正交之任何角度，將1-1.5英寸條狀噴霧圖案內的次微米級刨冰顆粒流撞擊到陶瓷塗層212上。於另一實施例中， CO2
乾冰噴砂係持續約2至約30分鐘。於本實施例中，在對陶瓷塗層212進行噴砂（步驟108）期間，潤濕陶瓷塗層212（步驟104）亦噴塗陶瓷塗層212，以保持陶瓷塗層212濕潤。
用加壓去離子水清洗陶瓷塗層212（步驟112）。
乾燥陶瓷塗層212（步驟116）。於該實例中，將加壓氮氣（N2
）引導至陶瓷塗層212，以乾燥該陶瓷塗層212（步驟116）。圖2C顯示出乾燥製程（步驟116）後之陶瓷塗層212。
接著，可將部件安裝並用於電漿處理腔室中。該陶瓷塗層212能夠在蝕刻電漿環境中提供保護。圖3為可使用實施例之蝕刻反應器的示意圖。於一或更多實施例中，電漿處理腔室300包括提供氣體入口之氣體分配板306以及靜電夾具（ESC）308，位於被腔室壁352包圍之蝕刻腔室349內。於蝕刻腔室349內，晶圓303係位於ESC 308上方。該ESC 308為基板支撐件。邊緣環309圍繞ESC 308。ESC源348可提供偏壓至ESC 308。氣體源310透過氣體分配板306連接至蝕刻腔室349。ESC溫度控制器350連接至ESC 308。
射頻（RF）源330提供RF功率至下部電極及／或上部電極。於本實施例中，下部電極是ESC 308，而上部電極是氣體分配板306。於示例性實施例中，400 千赫（kHz）、60百萬赫（MHz）、2 MHz、13.56 MHz及／或27 MHz 電源構成RF源330及ESC源348。於本實施例中，上部電極接地。於本實施例中，為每個頻率提供一個產生器。於其他實施例中，產生器可在單獨的RF源中，或者單獨的RF產生器可連接至不同的電極。 例如，上部電極可具有連接至不同RF源之內部及外部電極。在其他實施例中，可使用其他配置的RF源及電極。
控制器335係可控地連接至RF源330、ESC源348、排氣泵320及氣體源310。高流量襯套304是蝕刻腔室349內的襯套。高流量襯套304限制了來自氣體源的氣體，並具有狹槽302。狹槽302允許受控氣體流從氣體源310傳遞至排氣泵320。於此實例中，ESC 308可具有陶瓷塗層212（未顯示於圖3中），以使ESC 308更耐於電漿蝕刻。
已發現透過以顆粒對塗層進行噴砂來調節塗層，得以使塗層可用於電漿處理。透過以顆粒對塗層進行噴砂來調節塗層，可減少部件可用於處理晶圓或其他工件之前所需之陳化處理（seasoning）量。陳化處理是對空的蝕刻腔室349或具有空白晶圓之蝕刻腔室349供電以調節腔室以均勻地處理晶圓並減少缺陷的過程。陳化處理時間的增加意味著蝕刻腔室的停機時間增加及電力成本增加。對於ESC 308上的陶瓷塗層212，ESC 308上鬆散的顆粒可透過將晶圓放置於ESC 308上來去除。去除的顆粒為污染物。可將數個空白晶圓連續放置於腔室中，以去除ESC 308上鬆散的顆粒，作為陳化處理過程的一部分。上述實施例中之調節減少或消除了先前用於對ESC 308進行陳化處理所需之空白晶圓的數量。
在腔室已進行陳化處理之後且數個晶圓已進行處理之後，來自蝕刻及沉積製程之材料可能沉積在陶瓷塗層212上。此等材料可能成為污染物。 污染物會增加後續晶圓上的缺陷。 使用諸多上述實施例來調節陶瓷塗層212可去除此等沉積及污染物。
於諸多實施例中，陶瓷塗層212為介電質。已發現在沒有溶液的情況下用顆粒對陶瓷塗層212進行噴砂，會在陶瓷塗層212上產生高達10,000伏的靜電荷。足夠高的靜電荷會引起電弧（arcing）。電弧可能會損壞陶瓷塗層212及部件。損壞的部件可能需要更換，其花費數萬元。在陶瓷塗層212上提供溶液216使得靜電荷得以在用顆粒對陶瓷塗層212進行噴砂期間消散。於本實施例中，靜電荷不超過800伏的大小。因此，消除了電弧和由此造成的損壞。
於諸多實施例中，溶液可包括溶劑（如水）及弱電解質（如下述形式之含銨分子其中一或多者：過硼酸鹽（NH4
BO3
）、碳酸鹽（(NH4
)2
CO3
或NH4
HCO3
）、檸檬酸鹽（(NH4
)2
HC6
H5
O7
）、甲酸鹽（NH4
CHO2
）；乳酸鹽（NH4
C3
H5
O3
）、草酸鹽（(NH4
)2
C2
O4
或NH4
HC2
O4
）、水楊酸鹽（NH4
C7
H5
O3
）、琥珀酸鹽（(NH4
)2
C4
H4
O4
）、或酒石酸鹽（(NH4
)2
C4
H4
O6
或NH4
HC4
H4
O6
））。此外，在另一實施例中可使用產生銨（NH4 +
）及B2
O7
的鹽。弱電解質不含有如金屬離子或鹵素離子之污染物。另外，不使用形成強電解質的鹽。弱電解質在水中具有1%至10%的解離度。弱電解質在1大氣壓下的沸點低於120°C。低沸點使得弱電解質得以在調節期間蒸發。於諸多實施例中，溶液的pH為6至8。弱電解質不會蝕刻陶瓷塗層212，且蒸發後不會留下污染物殘留。於諸多實施例中，電解質具有約10-5
之Ka
或Kb
值。
於諸多實施例中，顆粒是乾冰。於此等實施例中，陶瓷塗層212係用固相、液相及氣相的CO2
進行噴砂。不同相的 CO2
改善了有機殘留物之清潔。 CO2
顆粒之冷溫度會冷卻陶瓷塗層212及殘留物。 CO2
顆粒可以是CO2
細屑或碎屑。CO2
顆粒汽化而沒有留下殘留物。陶瓷塗層212與殘留物之間的膨脹係數差異進一步促進殘留物去除。噴砂從陶瓷本身及表面塗層上減少表面顆粒。
於諸多實施例中，乾燥陶瓷塗層212可透過擦拭陶瓷塗層212、用例如N2
的氣體、無塵室空氣（CDA）噴洗陶瓷塗層212、加熱陶瓷塗層212、旋轉陶瓷塗層212、或在室溫下靜置陶瓷塗層212中之一或更多者來達成。
於諸多實施例中，陶瓷塗層212可為另一介電質耐電漿陶瓷，例如釔或含釔的陶瓷。
雖然本揭示內容已根據數個較佳實施例進行描述，但變更、修改、置換及諸多替代均等物皆落入本揭示內容之範圍內。亦應注意，尚有許多實現本揭示內容之方法及裝置的替代方式。因此，隨附的申請專利範圍旨在解釋為包含落入本揭示內容之真實精神及範疇內的所有此等改變、修改、置換及諸多替代均等物。
104:步驟
108:步驟
112:步驟
116:步驟
204:部件
208:主體
212:陶瓷塗層
216:溶液
300:電漿處理腔室
302:狹槽
303:晶圓
304:高流量襯套
306:氣體分配板
308:靜電夾具
309:邊緣環
310:氣體源
320:排氣泵
330:射頻源
335:控制器
348:靜電夾具源
349:蝕刻腔室
350:靜電夾具溫度控制器
352:腔室壁
於附圖之圖中，本揭示內容係以示例而非限制的方式進行說明，其中相似的元件符號係指相似的元件，其中：
圖1係一實施例之高階流程圖。
圖2A-C係根據一實施例處理之部件表面的橫剖面示意圖。
圖3係具有至少一部件根據一實施例進行調節之電漿處理腔室的示意圖。
104:步驟
108:步驟
112:步驟
116:步驟
Claims (16)
- 一種用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其包括： 用一溶液潤濕該陶瓷塗層，其中該溶液係藉由混合一溶劑與一電解質而形成，其中1%至10%之該電解質於該溶液中解離； 用複數顆粒對該陶瓷塗層進行噴砂；以及 清洗該陶瓷塗層。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該溶劑為水。
- 如申請專利範圍第2項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該電解質為醋酸銨。
- 如申請專利範圍第2項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該電解質為NH4 BO3 、(NH4 )2 B2 O7 、(NH4 )2 CO3 、NH4 HCO3 、(NH4 )2 HC6 H5 O7 、NH4 CHO2 、NH4 C3 H5 O3 、(NH4 )2 C2 O4 、NH4 HC2 O4 、NH4 C7 H5 O3 、(NH4 )2 C4 H4 O4 、(NH4 )2 C4 H4 O6 或NH4 HC4 H4 O6 中之至少一者。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該等顆粒為乾冰顆粒。
- 如申請專利範圍第5項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該等顆粒為固相、液相及氣相之至少一者。
- 如申請專利範圍第5項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，對該陶瓷塗層進行噴砂期間所產生的靜電荷不超過800伏大小。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該電解質於1大氣壓下具有低於120℃之沸點。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，更包括在清洗該陶瓷塗層後，乾燥該陶瓷塗層。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該陶瓷塗層包括氧化鋁、氧化釔或釔之至少一者。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該陶瓷塗層為介電質。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，更包括於用複數顆粒對該陶瓷塗層進行噴砂期間，噴塗該溶液至該陶瓷塗層上。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，更包括使用該部件作為一電漿處理腔室中之一靜電夾具。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，更包括於一電漿處理腔室中使用該部件。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該電解質蒸發且沒有留下殘留物。
- 如申請專利範圍第1項所述之用於電漿處理腔室中之部件上之陶瓷塗層的調節方法，其中，該等顆粒汽化且沒有留下殘留物。
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