JP3941149B2 - 半導体不揮発性記憶装置 - Google Patents

半導体不揮発性記憶装置 Download PDF

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Publication number
JP3941149B2
JP3941149B2 JP05576997A JP5576997A JP3941149B2 JP 3941149 B2 JP3941149 B2 JP 3941149B2 JP 05576997 A JP05576997 A JP 05576997A JP 5576997 A JP5576997 A JP 5576997A JP 3941149 B2 JP3941149 B2 JP 3941149B2
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Japan
Prior art keywords
data
memory cells
error
program
memory
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Expired - Lifetime
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JP05576997A
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Japanese (ja)
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JPH10222995A (ja
JPH10222995A5 (enExample
Inventor
謙士朗 荒瀬
昌敬 野田
寿伸 杉山
唯八 内貴
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP05576997A priority Critical patent/JP3941149B2/ja
Priority to US08/975,712 priority patent/US5920502A/en
Publication of JPH10222995A publication Critical patent/JPH10222995A/ja
Priority to US09/234,848 priority patent/US6046939A/en
Priority to US09/234,834 priority patent/US6002612A/en
Publication of JPH10222995A5 publication Critical patent/JPH10222995A5/ja
Application granted granted Critical
Publication of JP3941149B2 publication Critical patent/JP3941149B2/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP05576997A 1995-12-04 1997-03-11 半導体不揮発性記憶装置 Expired - Lifetime JP3941149B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP05576997A JP3941149B2 (ja) 1996-12-03 1997-03-11 半導体不揮発性記憶装置
US08/975,712 US5920502A (en) 1996-03-11 1997-11-21 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC
US09/234,848 US6046939A (en) 1996-03-11 1999-01-22 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC
US09/234,834 US6002612A (en) 1995-12-04 1999-01-22 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8-324293 1995-12-04
JP32301196 1996-12-03
JP8-323011 1996-12-03
JP32429396 1996-12-04
JP05576997A JP3941149B2 (ja) 1996-12-03 1997-03-11 半導体不揮発性記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004281465A Division JP2005018983A (ja) 1996-12-03 2004-09-28 半導体不揮発性記憶装置およびメモリシステム
JP2006130990A Division JP2006209971A (ja) 1996-12-03 2006-05-10 半導体不揮発性記憶装置

Publications (3)

Publication Number Publication Date
JPH10222995A JPH10222995A (ja) 1998-08-21
JPH10222995A5 JPH10222995A5 (enExample) 2004-10-07
JP3941149B2 true JP3941149B2 (ja) 2007-07-04

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JP05576997A Expired - Lifetime JP3941149B2 (ja) 1995-12-04 1997-03-11 半導体不揮発性記憶装置

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US (3) US5920502A (enExample)
JP (1) JP3941149B2 (enExample)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100268433B1 (ko) * 1997-12-29 2000-10-16 윤종용 열 리던던시 구조를 가지는 반도체 메모리 장치
US6272659B1 (en) * 1998-05-18 2001-08-07 Cirrus Logic, Inc. Error correction code processor employing adjustable correction power for miscorrection minimization
JP2000173289A (ja) * 1998-12-10 2000-06-23 Toshiba Corp エラー訂正可能なフラッシュメモリシステム
JP2001014871A (ja) 1999-06-29 2001-01-19 Toshiba Corp 不揮発性半導体記憶装置
US6331948B2 (en) 1999-12-09 2001-12-18 Kabushiki Kaisha Toshiba Error correcting circuit for making efficient error correction, and involatile semiconductor memory device incorporating the same error correcting circuit
US6728913B1 (en) * 2000-02-25 2004-04-27 Advanced Micro Devices, Inc. Data recycling in memory
JP3595495B2 (ja) 2000-07-27 2004-12-02 Ｎｅｃマイクロシステム株式会社 半導体記憶装置
DE10109449B4 (de) * 2000-08-02 2012-11-08 Continental Teves Ag & Co. Ohg Verfahren und Schaltungsanordnung zur Speicherung von Prüfbit-Worten
KR100391154B1 (ko) * 2001-05-14 2003-07-12 삼성전자주식회사 불휘발성 반도체 메모리 장치의 프로그램 방법 및 장치
US7219271B2 (en) * 2001-12-14 2007-05-15 Sandisk 3D Llc Memory device and method for redundancy/self-repair
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US7324393B2 (en) * 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
EP1543529B1 (en) * 2002-09-24 2009-11-04 SanDisk Corporation Non-volatile memory and its sensing method
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7327619B2 (en) * 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6868022B2 (en) * 2003-03-28 2005-03-15 Matrix Semiconductor, Inc. Redundant memory structure using bad bit pointers
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) * 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US7881133B2 (en) * 2003-11-11 2011-02-01 Samsung Electronics Co., Ltd. Method of managing a flash memory and the flash memory
KR100719380B1 (ko) * 2006-03-31 2007-05-18 삼성전자주식회사 향상된 신뢰성 특성을 갖는 다치 플래시 메모리 장치 및그것을 포함한 메모리 시스템
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
JP4135680B2 (ja) * 2004-05-31 2008-08-20 ソニー株式会社 半導体記憶装置および信号処理システム
JP2005353242A (ja) 2004-06-14 2005-12-22 Toshiba Corp 不揮発性半導体記憶装置及びそのデータ書き込み方法
JP4703148B2 (ja) * 2004-09-08 2011-06-15 株式会社東芝 不揮発性半導体記憶装置
JP4261461B2 (ja) 2004-11-05 2009-04-30 株式会社東芝 半導体集積回路装置、及びそれを用いた不揮発性メモリシステム
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7277336B2 (en) * 2004-12-28 2007-10-02 Sandisk 3D Llc Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information
US7158416B2 (en) * 2005-03-15 2007-01-02 Infineon Technologies Flash Gmbh & Co. Kg Method for operating a flash memory device
US7586789B2 (en) * 2005-03-24 2009-09-08 Beedar Technology Inc. Method for adjusting programming/erasing time in memory system
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7206230B2 (en) * 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7212454B2 (en) * 2005-06-22 2007-05-01 Sandisk 3D Llc Method and apparatus for programming a memory array
KR100648290B1 (ko) 2005-07-26 2006-11-23 삼성전자주식회사 프로그램 속도를 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법
JP4761910B2 (ja) * 2005-10-05 2011-08-31 株式会社東芝 不揮発性半導体記憶装置及びそれを用いた不揮発性メモリシステム
US7428180B2 (en) * 2006-01-25 2008-09-23 Samsung Electronics Co., Ltd. Semiconductor memory devices and methods of testing for failed bits of semiconductor memory devices
US7355892B2 (en) * 2006-06-30 2008-04-08 Sandisk Corporation Partial page fail bit detection in flash memory devices
US7966518B2 (en) * 2007-05-15 2011-06-21 Sandisk Corporation Method for repairing a neighborhood of rows in a memory array using a patch table
US7958390B2 (en) * 2007-05-15 2011-06-07 Sandisk Corporation Memory device for repairing a neighborhood of rows in a memory array using a patch table
JP4994112B2 (ja) * 2007-05-22 2012-08-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびメモリ制御方法
US7765426B2 (en) 2007-06-07 2010-07-27 Micron Technology, Inc. Emerging bad block detection
US8145977B2 (en) * 2007-10-15 2012-03-27 Joseph Schweiray Lee Methods and apparatus for providing error correction to unwritten pages and for identifying unwritten pages in flash memory
KR100933859B1 (ko) * 2007-11-29 2009-12-24 주식회사 하이닉스반도체 플래시 메모리 소자 및 그것의 프로그램 방법
KR100857252B1 (ko) 2007-12-27 2008-09-05 (주)인디링스 마모도를 비트 수준에서 평준화하는 플래시 메모리 장치 및플래시 메모리 프로그래밍 방법
KR101464255B1 (ko) * 2008-06-23 2014-11-25 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함한 시스템
JP5404804B2 (ja) 2009-05-25 2014-02-05 株式会社日立製作所 ストレージサブシステム
JP5426250B2 (ja) * 2009-06-26 2014-02-26 三星電子株式会社 不揮発性半導体メモリの放電回路
TWI412036B (zh) * 2009-07-22 2013-10-11 Silicon Motion Inc 資料讀取的方法及資料儲存裝置
KR101617641B1 (ko) * 2009-08-27 2016-05-03 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템, 및 그것의 프로그램 방법
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
KR101716716B1 (ko) 2010-10-28 2017-03-15 삼성전자주식회사 플래그 셀들을 갖는 플래시 메모리 장치 및 그것의 프로그램 동작 방법
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8385132B2 (en) * 2010-12-22 2013-02-26 Sandisk Technologies Inc. Alternate bit line bias during programming to reduce channel to floating gate coupling in memory
JP5514135B2 (ja) * 2011-02-15 2014-06-04 株式会社東芝 不揮発性半導体記憶装置
JP5929456B2 (ja) 2012-04-17 2016-06-08 ソニー株式会社 記憶制御装置、記憶装置、情報処理システム、および、それらにおける処理方法
US9110829B2 (en) 2012-11-30 2015-08-18 Taiwan Semiconductor Manufacturing Co. Ltd. MRAM smart bit write algorithm with error correction parity bits
KR102157875B1 (ko) 2013-12-19 2020-09-22 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
US9240249B1 (en) * 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9507663B1 (en) 2015-05-04 2016-11-29 Macronix International Co., Ltd. Memory device and operation method
TWI573146B (zh) * 2015-05-28 2017-03-01 旺宏電子股份有限公司 記憶體裝置與其操作方法
US10726936B2 (en) * 2018-12-20 2020-07-28 Micron Technology, Inc. Bad block management for memory sub-systems

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5606532A (en) * 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
US5771346A (en) * 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device

Also Published As

Publication number Publication date
JPH10222995A (ja) 1998-08-21
US5920502A (en) 1999-07-06
US6046939A (en) 2000-04-04
US6002612A (en) 1999-12-14

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