JPH10222995A5 - - Google Patents

Info

Publication number
JPH10222995A5
JPH10222995A5 JP1997055769A JP5576997A JPH10222995A5 JP H10222995 A5 JPH10222995 A5 JP H10222995A5 JP 1997055769 A JP1997055769 A JP 1997055769A JP 5576997 A JP5576997 A JP 5576997A JP H10222995 A5 JPH10222995 A5 JP H10222995A5
Authority
JP
Japan
Prior art keywords
data
memory cells
programming
error
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997055769A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10222995A (ja
JP3941149B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP05576997A priority Critical patent/JP3941149B2/ja
Priority claimed from JP05576997A external-priority patent/JP3941149B2/ja
Priority to US08/975,712 priority patent/US5920502A/en
Publication of JPH10222995A publication Critical patent/JPH10222995A/ja
Priority to US09/234,848 priority patent/US6046939A/en
Priority to US09/234,834 priority patent/US6002612A/en
Publication of JPH10222995A5 publication Critical patent/JPH10222995A5/ja
Application granted granted Critical
Publication of JP3941149B2 publication Critical patent/JP3941149B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP05576997A 1995-12-04 1997-03-11 半導体不揮発性記憶装置 Expired - Lifetime JP3941149B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP05576997A JP3941149B2 (ja) 1996-12-03 1997-03-11 半導体不揮発性記憶装置
US08/975,712 US5920502A (en) 1996-03-11 1997-11-21 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC
US09/234,848 US6046939A (en) 1996-03-11 1999-01-22 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC
US09/234,834 US6002612A (en) 1995-12-04 1999-01-22 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8-324293 1995-12-04
JP32301196 1996-12-03
JP8-323011 1996-12-03
JP32429396 1996-12-04
JP05576997A JP3941149B2 (ja) 1996-12-03 1997-03-11 半導体不揮発性記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2004281465A Division JP2005018983A (ja) 1996-12-03 2004-09-28 半導体不揮発性記憶装置およびメモリシステム
JP2006130990A Division JP2006209971A (ja) 1996-12-03 2006-05-10 半導体不揮発性記憶装置

Publications (3)

Publication Number Publication Date
JPH10222995A JPH10222995A (ja) 1998-08-21
JPH10222995A5 true JPH10222995A5 (enExample) 2004-10-07
JP3941149B2 JP3941149B2 (ja) 2007-07-04

Family

ID=27295702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05576997A Expired - Lifetime JP3941149B2 (ja) 1995-12-04 1997-03-11 半導体不揮発性記憶装置

Country Status (2)

Country Link
US (3) US5920502A (enExample)
JP (1) JP3941149B2 (enExample)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100268433B1 (ko) * 1997-12-29 2000-10-16 윤종용 열 리던던시 구조를 가지는 반도체 메모리 장치
US6272659B1 (en) * 1998-05-18 2001-08-07 Cirrus Logic, Inc. Error correction code processor employing adjustable correction power for miscorrection minimization
JP2000173289A (ja) * 1998-12-10 2000-06-23 Toshiba Corp エラー訂正可能なフラッシュメモリシステム
JP2001014871A (ja) 1999-06-29 2001-01-19 Toshiba Corp 不揮発性半導体記憶装置
US6331948B2 (en) 1999-12-09 2001-12-18 Kabushiki Kaisha Toshiba Error correcting circuit for making efficient error correction, and involatile semiconductor memory device incorporating the same error correcting circuit
US6728913B1 (en) * 2000-02-25 2004-04-27 Advanced Micro Devices, Inc. Data recycling in memory
JP3595495B2 (ja) 2000-07-27 2004-12-02 Ｎｅｃマイクロシステム株式会社 半導体記憶装置
DE10109449B4 (de) * 2000-08-02 2012-11-08 Continental Teves Ag & Co. Ohg Verfahren und Schaltungsanordnung zur Speicherung von Prüfbit-Worten
KR100391154B1 (ko) * 2001-05-14 2003-07-12 삼성전자주식회사 불휘발성 반도체 메모리 장치의 프로그램 방법 및 장치
US7219271B2 (en) * 2001-12-14 2007-05-15 Sandisk 3D Llc Memory device and method for redundancy/self-repair
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US7324393B2 (en) * 2002-09-24 2008-01-29 Sandisk Corporation Method for compensated sensing in non-volatile memory
EP1543529B1 (en) * 2002-09-24 2009-11-04 SanDisk Corporation Non-volatile memory and its sensing method
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
US7443757B2 (en) 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
US7327619B2 (en) * 2002-09-24 2008-02-05 Sandisk Corporation Reference sense amplifier for non-volatile memory
US7046568B2 (en) * 2002-09-24 2006-05-16 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US6868022B2 (en) * 2003-03-28 2005-03-15 Matrix Semiconductor, Inc. Redundant memory structure using bad bit pointers
US6956770B2 (en) * 2003-09-17 2005-10-18 Sandisk Corporation Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
US7064980B2 (en) * 2003-09-17 2006-06-20 Sandisk Corporation Non-volatile memory and method with bit line coupled compensation
US7881133B2 (en) * 2003-11-11 2011-02-01 Samsung Electronics Co., Ltd. Method of managing a flash memory and the flash memory
KR100719380B1 (ko) * 2006-03-31 2007-05-18 삼성전자주식회사 향상된 신뢰성 특성을 갖는 다치 플래시 메모리 장치 및그것을 포함한 메모리 시스템
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
JP4135680B2 (ja) * 2004-05-31 2008-08-20 ソニー株式会社 半導体記憶装置および信号処理システム
JP2005353242A (ja) 2004-06-14 2005-12-22 Toshiba Corp 不揮発性半導体記憶装置及びそのデータ書き込み方法
JP4703148B2 (ja) * 2004-09-08 2011-06-15 株式会社東芝 不揮発性半導体記憶装置
JP4261461B2 (ja) 2004-11-05 2009-04-30 株式会社東芝 半導体集積回路装置、及びそれを用いた不揮発性メモリシステム
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7277336B2 (en) * 2004-12-28 2007-10-02 Sandisk 3D Llc Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information
US7158416B2 (en) * 2005-03-15 2007-01-02 Infineon Technologies Flash Gmbh & Co. Kg Method for operating a flash memory device
US7586789B2 (en) * 2005-03-24 2009-09-08 Beedar Technology Inc. Method for adjusting programming/erasing time in memory system
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7206230B2 (en) * 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7212454B2 (en) * 2005-06-22 2007-05-01 Sandisk 3D Llc Method and apparatus for programming a memory array
KR100648290B1 (ko) 2005-07-26 2006-11-23 삼성전자주식회사 프로그램 속도를 향상시킬 수 있는 불 휘발성 메모리 장치및 그것의 프로그램 방법
JP4761910B2 (ja) * 2005-10-05 2011-08-31 株式会社東芝 不揮発性半導体記憶装置及びそれを用いた不揮発性メモリシステム
US7428180B2 (en) * 2006-01-25 2008-09-23 Samsung Electronics Co., Ltd. Semiconductor memory devices and methods of testing for failed bits of semiconductor memory devices
US7355892B2 (en) * 2006-06-30 2008-04-08 Sandisk Corporation Partial page fail bit detection in flash memory devices
US7966518B2 (en) * 2007-05-15 2011-06-21 Sandisk Corporation Method for repairing a neighborhood of rows in a memory array using a patch table
US7958390B2 (en) * 2007-05-15 2011-06-07 Sandisk Corporation Memory device for repairing a neighborhood of rows in a memory array using a patch table
JP4994112B2 (ja) * 2007-05-22 2012-08-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびメモリ制御方法
US7765426B2 (en) 2007-06-07 2010-07-27 Micron Technology, Inc. Emerging bad block detection
US8145977B2 (en) * 2007-10-15 2012-03-27 Joseph Schweiray Lee Methods and apparatus for providing error correction to unwritten pages and for identifying unwritten pages in flash memory
KR100933859B1 (ko) * 2007-11-29 2009-12-24 주식회사 하이닉스반도체 플래시 메모리 소자 및 그것의 프로그램 방법
KR100857252B1 (ko) 2007-12-27 2008-09-05 (주)인디링스 마모도를 비트 수준에서 평준화하는 플래시 메모리 장치 및플래시 메모리 프로그래밍 방법
KR101464255B1 (ko) * 2008-06-23 2014-11-25 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함한 시스템
JP5404804B2 (ja) 2009-05-25 2014-02-05 株式会社日立製作所 ストレージサブシステム
JP5426250B2 (ja) * 2009-06-26 2014-02-26 三星電子株式会社 不揮発性半導体メモリの放電回路
TWI412036B (zh) * 2009-07-22 2013-10-11 Silicon Motion Inc 資料讀取的方法及資料儲存裝置
KR101617641B1 (ko) * 2009-08-27 2016-05-03 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템, 및 그것의 프로그램 방법
JP2012069180A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
KR101716716B1 (ko) 2010-10-28 2017-03-15 삼성전자주식회사 플래그 셀들을 갖는 플래시 메모리 장치 및 그것의 프로그램 동작 방법
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme
US8385132B2 (en) * 2010-12-22 2013-02-26 Sandisk Technologies Inc. Alternate bit line bias during programming to reduce channel to floating gate coupling in memory
JP5514135B2 (ja) * 2011-02-15 2014-06-04 株式会社東芝 不揮発性半導体記憶装置
JP5929456B2 (ja) 2012-04-17 2016-06-08 ソニー株式会社 記憶制御装置、記憶装置、情報処理システム、および、それらにおける処理方法
US9110829B2 (en) 2012-11-30 2015-08-18 Taiwan Semiconductor Manufacturing Co. Ltd. MRAM smart bit write algorithm with error correction parity bits
KR102157875B1 (ko) 2013-12-19 2020-09-22 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
US9240249B1 (en) * 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9507663B1 (en) 2015-05-04 2016-11-29 Macronix International Co., Ltd. Memory device and operation method
TWI573146B (zh) * 2015-05-28 2017-03-01 旺宏電子股份有限公司 記憶體裝置與其操作方法
US10726936B2 (en) * 2018-12-20 2020-07-28 Micron Technology, Inc. Bad block management for memory sub-systems

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US5606532A (en) * 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
US5771346A (en) * 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device

Similar Documents

Publication Publication Date Title
JPH10222995A5 (enExample)
JP3941149B2 (ja) 半導体不揮発性記憶装置
US6349056B1 (en) Method and structure for efficient data verification operation for non-volatile memories
US7676710B2 (en) Error detection, documentation, and correction in a flash memory device
US8046646B2 (en) Defective memory block identification in a memory device
US6108236A (en) Smart card comprising integrated circuitry including EPROM and error check and correction system
JP3730423B2 (ja) 半導体記憶装置
TWI401689B (zh) 具有極性控制的多重位元格非揮發記憶體裝置與系統，以及對其進行程式化之方法
US20160048338A1 (en) Memory block quality identification in a memory
US20060262606A1 (en) Memory block erasing in a flash memory device
EP1312095A2 (en) Method and structure for reliable data copy operation for non-volatile memories
US7277981B2 (en) Scratch control memory array in a flash memory device
JP2000123584A (ja) 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
JP2005018983A5 (enExample)
US20140369117A1 (en) Multiple step programming in a memory device
JP2005018983A (ja) 半導体不揮発性記憶装置およびメモリシステム
US5715195A (en) Programmable memory verify "0" and verify "1" circuit and method
JP2006209971A5 (enExample)
US20040264250A1 (en) Flash memory comprising an erase verify algorithm integrated into a programming algorithm
JP3148143B2 (ja) 不揮発性半導体記憶装置
KR100486132B1 (ko) Ecc를이용한신속한데이터프로그래밍및소거기능을가지는불휘발성반도체기억장치
JP2006209971A (ja) 半導体不揮発性記憶装置
JPH07192485A (ja) 書込みチェック機能を備えた電気的に変更可能な不揮発性メモリ
JP3655882B2 (ja) データ記憶用装置
JP3796063B2 (ja) 不揮発性メモリの書き込み回路