JP3938040B2 - 反射型投影光学系、露光装置及びデバイス製造方法 - Google Patents

反射型投影光学系、露光装置及びデバイス製造方法 Download PDF

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Publication number
JP3938040B2
JP3938040B2 JP2002378776A JP2002378776A JP3938040B2 JP 3938040 B2 JP3938040 B2 JP 3938040B2 JP 2002378776 A JP2002378776 A JP 2002378776A JP 2002378776 A JP2002378776 A JP 2002378776A JP 3938040 B2 JP3938040 B2 JP 3938040B2
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JP
Japan
Prior art keywords
reflecting mirror
mirror
optical system
projection optical
reflecting
Prior art date
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Expired - Fee Related
Application number
JP2002378776A
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English (en)
Japanese (ja)
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JP2004214242A (ja
JP2004214242A5 (enExample
Inventor
千明 寺沢
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2002378776A priority Critical patent/JP3938040B2/ja
Priority to EP03029172A priority patent/EP1434093B1/en
Priority to DE60322657T priority patent/DE60322657D1/de
Priority to US10/746,575 priority patent/US7130018B2/en
Priority to TW092136893A priority patent/TWI260470B/zh
Priority to KR1020030098115A priority patent/KR100554784B1/ko
Publication of JP2004214242A publication Critical patent/JP2004214242A/ja
Publication of JP2004214242A5 publication Critical patent/JP2004214242A5/ja
Application granted granted Critical
Publication of JP3938040B2 publication Critical patent/JP3938040B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002378776A 2002-12-27 2002-12-27 反射型投影光学系、露光装置及びデバイス製造方法 Expired - Fee Related JP3938040B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002378776A JP3938040B2 (ja) 2002-12-27 2002-12-27 反射型投影光学系、露光装置及びデバイス製造方法
EP03029172A EP1434093B1 (en) 2002-12-27 2003-12-18 Catoptric projection system, exposure apparatus and device fabrication method
DE60322657T DE60322657D1 (de) 2002-12-27 2003-12-18 Katoptrisches Projektionssystem, Belichtungsapparat und Verfahren zur Herstellung einer Vorrichtung
US10/746,575 US7130018B2 (en) 2002-12-27 2003-12-24 Catoptric projection optical system, exposure apparatus and device fabrication method
TW092136893A TWI260470B (en) 2002-12-27 2003-12-25 Cataoptric projection optical system, exposure apparatus and device fabrication method
KR1020030098115A KR100554784B1 (ko) 2002-12-27 2003-12-27 캐터옵트릭형 투영 광학계, 노광 장치 및 디바이스의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002378776A JP3938040B2 (ja) 2002-12-27 2002-12-27 反射型投影光学系、露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2004214242A JP2004214242A (ja) 2004-07-29
JP2004214242A5 JP2004214242A5 (enExample) 2005-06-23
JP3938040B2 true JP3938040B2 (ja) 2007-06-27

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JP2002378776A Expired - Fee Related JP3938040B2 (ja) 2002-12-27 2002-12-27 反射型投影光学系、露光装置及びデバイス製造方法

Country Status (6)

Country Link
US (1) US7130018B2 (enExample)
EP (1) EP1434093B1 (enExample)
JP (1) JP3938040B2 (enExample)
KR (1) KR100554784B1 (enExample)
DE (1) DE60322657D1 (enExample)
TW (1) TWI260470B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
JP2005189247A (ja) * 2003-12-24 2005-07-14 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR101213831B1 (ko) 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
TW200622304A (en) * 2004-11-05 2006-07-01 Nikon Corp Projection optical system and exposure device with it
DE102005042005A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
WO2006087978A1 (ja) * 2005-02-15 2006-08-24 Nikon Corporation 投影光学系、露光装置、およびデバイスの製造方法
KR101176686B1 (ko) 2005-03-08 2012-08-23 칼 짜이스 에스엠티 게엠베하 접근 용이한 조리개 또는 구경 조리개를 구비한마이크로리소그래피 투영 시스템
EP1877868A1 (en) * 2005-05-03 2008-01-16 Carl Zeiss SMT AG Microlithography exposure apparatus using polarized light and microlithography projection system having concave primary and secondary mirrors
WO2007023665A1 (ja) * 2005-08-24 2007-03-01 Nikon Corporation 投影光学系、露光装置、およびデバイスの製造方法
KR101127346B1 (ko) 2005-09-13 2012-03-29 칼 짜이스 에스엠티 게엠베하 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
WO2007093433A1 (de) 2006-02-17 2007-08-23 Carl Zeiss Smt Ag Beleuchtungssystem für die mikro-lithographie, projektionsbelichtungsanlage mit einem derartigen beleuchtungssystem
US7470033B2 (en) * 2006-03-24 2008-12-30 Nikon Corporation Reflection-type projection-optical systems, and exposure apparatus comprising same
DE102006014380A1 (de) 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
JP5479889B2 (ja) 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー デバイス製造用のマイクロリソグラフィ投影光学システム及び方法
US20080118849A1 (en) * 2006-11-21 2008-05-22 Manish Chandhok Reflective optical system for a photolithography scanner field projector
DE102007023411A1 (de) 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
US20080175349A1 (en) * 2007-01-16 2008-07-24 Optical Research Associates Maskless euv projection optics
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
US7929114B2 (en) 2007-01-17 2011-04-19 Carl Zeiss Smt Gmbh Projection optics for microlithography
DE102008001216A1 (de) 2007-04-18 2008-10-23 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie
DE102008002377A1 (de) 2007-07-17 2009-01-22 Carl Zeiss Smt Ag Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem
DE102007033967A1 (de) * 2007-07-19 2009-01-29 Carl Zeiss Smt Ag Projektionsobjektiv
US8027022B2 (en) 2007-07-24 2011-09-27 Carl Zeiss Smt Gmbh Projection objective
KR101393999B1 (ko) 2007-08-20 2014-05-14 칼 짜이스 에스엠티 게엠베하 반사 코팅을 갖는 미러 소자들을 구비하는 투영 대물렌즈
DE102007045396A1 (de) 2007-09-21 2009-04-23 Carl Zeiss Smt Ag Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
EP2533104B1 (en) 2007-10-26 2016-05-11 Carl Zeiss SMT GmbH Imaging optical system and projection exposure apparatus therewith
WO2009053023A2 (en) 2007-10-26 2009-04-30 Carl Zeiss Smt Ag Imaging optical system and projection exposure apparatus for microlithography comprising an imaging optical system of this type
DE102009054986B4 (de) 2009-12-18 2015-11-12 Carl Zeiss Smt Gmbh Reflektive Maske für die EUV-Lithographie
CN102402135B (zh) * 2011-12-07 2013-06-05 北京理工大学 一种极紫外光刻投影物镜设计方法
DE102013204445A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Vergrößernde abbildende Optik sowie EUV-Maskeninspektionssystem mit einer derartigen abbildenden Optik
US10558126B2 (en) 2014-02-24 2020-02-11 Asml Netherlands B.V. Lithographic apparatus and method
JP6635904B2 (ja) * 2016-10-14 2020-01-29 キヤノン株式会社 投影光学系、露光装置及び物品の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686728A (en) * 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US6255661B1 (en) * 1998-05-06 2001-07-03 U.S. Philips Corporation Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
JP2000100694A (ja) 1998-09-22 2000-04-07 Nikon Corp 反射縮小投影光学系、該光学系を備えた投影露光装置および該装置を用いた露光方法
JP2000139672A (ja) 1998-11-09 2000-05-23 Toyo Ink Mfg Co Ltd 滑り防止層を有する敷物
DE59914179D1 (de) 1999-02-15 2007-03-22 Zeiss Carl Smt Ag Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
US7151592B2 (en) * 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
US6600552B2 (en) * 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
US6033079A (en) * 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
US6867913B2 (en) * 2000-02-14 2005-03-15 Carl Zeiss Smt Ag 6-mirror microlithography projection objective
KR100787525B1 (ko) * 2000-08-01 2007-12-21 칼 짜이스 에스엠티 아게 6 거울-마이크로리소그래피 - 투사 대물렌즈
JP2002116382A (ja) * 2000-10-05 2002-04-19 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
DE10052289A1 (de) * 2000-10-20 2002-04-25 Zeiss Carl 8-Spiegel-Mikrolithographie-Projektionsobjektiv
EP1327172A1 (de) * 2000-10-20 2003-07-16 Carl Zeiss 8-spiegel-mikrolithographie-projektionsobjektiv
EP1679551A1 (en) * 2000-11-07 2006-07-12 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2002162566A (ja) * 2000-11-27 2002-06-07 Nikon Corp 光学系の設計方法，光学系および投影露光装置

Also Published As

Publication number Publication date
TWI260470B (en) 2006-08-21
KR100554784B1 (ko) 2006-02-22
EP1434093A2 (en) 2004-06-30
DE60322657D1 (de) 2008-09-18
KR20040060824A (ko) 2004-07-06
EP1434093B1 (en) 2008-08-06
US20040189968A1 (en) 2004-09-30
EP1434093A3 (en) 2006-08-02
US7130018B2 (en) 2006-10-31
JP2004214242A (ja) 2004-07-29
TW200426526A (en) 2004-12-01

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