JP3898798B2 - 窒化ガリウム系化合物半導体発光素子の製造方法 - Google Patents

窒化ガリウム系化合物半導体発光素子の製造方法 Download PDF

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Publication number
JP3898798B2
JP3898798B2 JP13690197A JP13690197A JP3898798B2 JP 3898798 B2 JP3898798 B2 JP 3898798B2 JP 13690197 A JP13690197 A JP 13690197A JP 13690197 A JP13690197 A JP 13690197A JP 3898798 B2 JP3898798 B2 JP 3898798B2
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layer
gallium nitride
compound semiconductor
semiconductor light
type
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JP13690197A
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Japanese (ja)
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JPH10335701A (ja
JPH10335701A5 (enExample
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俊雄 幡
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Sharp Corp
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Sharp Corp
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  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13690197A 1997-05-27 1997-05-27 窒化ガリウム系化合物半導体発光素子の製造方法 Expired - Fee Related JP3898798B2 (ja)

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JP13690197A JP3898798B2 (ja) 1997-05-27 1997-05-27 窒化ガリウム系化合物半導体発光素子の製造方法

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JP13690197A JP3898798B2 (ja) 1997-05-27 1997-05-27 窒化ガリウム系化合物半導体発光素子の製造方法

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JPH10335701A JPH10335701A (ja) 1998-12-18
JPH10335701A5 JPH10335701A5 (enExample) 2005-04-07
JP3898798B2 true JP3898798B2 (ja) 2007-03-28

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JP13690197A Expired - Fee Related JP3898798B2 (ja) 1997-05-27 1997-05-27 窒化ガリウム系化合物半導体発光素子の製造方法

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208874A (ja) * 1999-01-12 2000-07-28 Sony Corp 窒化物半導体と、窒化物半導体発光装置と、窒化物半導体の製造方法と、半導体発光装置の製造方法
TWI373894B (en) 2003-06-27 2012-10-01 Nichia Corp Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
JP4534435B2 (ja) * 2003-06-27 2010-09-01 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP3841092B2 (ja) 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
KR100568300B1 (ko) * 2004-03-31 2006-04-05 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2006165069A (ja) * 2004-12-02 2006-06-22 Ulvac Japan Ltd 化合物半導体の成長方法及び装置
JP4788138B2 (ja) * 2004-12-10 2011-10-05 日亜化学工業株式会社 窒化物半導体素子
JP4954691B2 (ja) * 2006-12-13 2012-06-20 パナソニック株式会社 窒化物半導体レーザ装置の製造方法及び窒化物半導体レーザ装置
RU2344509C2 (ru) 2007-01-17 2009-01-20 Самсунг Электро-Меканикс Ко., Лтд. СПОСОБ ВЫРАЩИВАНИЯ МНОГОСЛОЙНОЙ СТРУКТУРЫ НА ОСНОВЕ InGaN ПОСРЕДСТВОМ ПЛАЗМЕННОГО МВЕ
JP5107076B2 (ja) * 2008-02-01 2012-12-26 Ｊｘ日鉱日石金属株式会社 半導体基板の表面処理方法
JP5708033B2 (ja) * 2011-02-28 2015-04-30 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、及びｉｉｉ族窒化物半導体素子を作製する方法
JP5697246B2 (ja) * 2011-04-13 2015-04-08 イビデン株式会社 エピタキシャル成長用サセプタ、これを用いたエピタキシャル成長装置およびこれを用いたエピタキシャル成長方法
JP6988530B2 (ja) * 2018-02-06 2022-01-05 住友電気工業株式会社 窒化物半導体装置の製造方法

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