JP3877860B2 - 固体撮像素子付半導体装置及び該半導体装置の製造方法 - Google Patents

固体撮像素子付半導体装置及び該半導体装置の製造方法 Download PDF

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Publication number
JP3877860B2
JP3877860B2 JP06004298A JP6004298A JP3877860B2 JP 3877860 B2 JP3877860 B2 JP 3877860B2 JP 06004298 A JP06004298 A JP 06004298A JP 6004298 A JP6004298 A JP 6004298A JP 3877860 B2 JP3877860 B2 JP 3877860B2
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JP
Japan
Prior art keywords
solid
pad electrode
electrode
peripheral circuit
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP06004298A
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English (en)
Japanese (ja)
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JPH11261044A (ja
JPH11261044A5 (https=
Inventor
一人 西田
利明 杉村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP06004298A priority Critical patent/JP3877860B2/ja
Publication of JPH11261044A publication Critical patent/JPH11261044A/ja
Publication of JPH11261044A5 publication Critical patent/JPH11261044A5/ja
Application granted granted Critical
Publication of JP3877860B2 publication Critical patent/JP3877860B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
JP06004298A 1998-03-11 1998-03-11 固体撮像素子付半導体装置及び該半導体装置の製造方法 Expired - Fee Related JP3877860B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06004298A JP3877860B2 (ja) 1998-03-11 1998-03-11 固体撮像素子付半導体装置及び該半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06004298A JP3877860B2 (ja) 1998-03-11 1998-03-11 固体撮像素子付半導体装置及び該半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH11261044A JPH11261044A (ja) 1999-09-24
JPH11261044A5 JPH11261044A5 (https=) 2005-01-06
JP3877860B2 true JP3877860B2 (ja) 2007-02-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP06004298A Expired - Fee Related JP3877860B2 (ja) 1998-03-11 1998-03-11 固体撮像素子付半導体装置及び該半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP3877860B2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2800910B1 (fr) * 1999-11-04 2003-08-22 St Microelectronics Sa Boitier semi-conducteur optique et procede de fabrication d'un tel boitier
JP2001358997A (ja) * 2000-06-12 2001-12-26 Mitsubishi Electric Corp 半導体装置
JP4727850B2 (ja) * 2001-06-21 2011-07-20 ローム株式会社 半導体電子部品
FR2827425B1 (fr) * 2001-07-13 2004-07-02 Kingpak Tech Inc Structure empilee d'un detecteur d'image et procede pour fabriquer celle-ci
JPWO2003012863A1 (ja) 2001-07-31 2004-12-09 株式会社ルネサステクノロジ 半導体装置及びその製造方法
EP1453097A4 (en) * 2001-11-05 2008-01-23 Zycube Co Ltd TUBE-FREE IMAGE SENSOR AND METHOD FOR THE PRODUCTION THEREOF
JP4191954B2 (ja) * 2002-05-17 2008-12-03 富士フイルム株式会社 撮像素子実装構造および撮像装置
JP2004312570A (ja) * 2003-04-10 2004-11-04 Seiko Precision Inc 固体撮像装置
EP1628348A4 (en) * 2003-05-23 2007-07-18 Hamamatsu Photonics Kk PHOTO DETECTION DEVICE
KR100998041B1 (ko) 2003-12-16 2010-12-03 삼성테크윈 주식회사 디지털 카메라 모듈
TWI296154B (en) 2004-01-27 2008-04-21 Casio Computer Co Ltd Optical sensor module
JP4170968B2 (ja) 2004-02-02 2008-10-22 松下電器産業株式会社 光学デバイス
JP2004207760A (ja) * 2004-04-09 2004-07-22 Matsushita Electric Ind Co Ltd 半導体装置
JP4565931B2 (ja) * 2004-08-25 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4365844B2 (ja) * 2006-09-08 2009-11-18 三菱電機株式会社 荷電粒子線の線量分布測定装置
TWI339883B (en) * 2007-02-02 2011-04-01 Unimicron Technology Corp Substrate structure for semiconductor package and manufacturing method thereof
WO2010073520A1 (ja) 2008-12-26 2010-07-01 パナソニック株式会社 固体撮像デバイスおよびその製造方法
KR101018202B1 (ko) 2009-03-30 2011-02-28 삼성전기주식회사 카메라 모듈
JP5299106B2 (ja) * 2009-06-16 2013-09-25 大日本印刷株式会社 撮像素子モジュール
JP2013122937A (ja) * 2010-03-26 2013-06-20 Panasonic Corp 光学半導体装置
JP2013084744A (ja) 2011-10-07 2013-05-09 Sony Corp 固体撮像素子および電子機器
JP5421475B2 (ja) 2012-07-04 2014-02-19 誠 雫石 撮像素子、半導体集積回路及び撮像装置
JP2024042371A (ja) * 2022-09-15 2024-03-28 ソニーセミコンダクタソリューションズ株式会社 半導体装置

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Publication number Publication date
JPH11261044A (ja) 1999-09-24

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