JP3876401B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP3876401B2
JP3876401B2 JP22526699A JP22526699A JP3876401B2 JP 3876401 B2 JP3876401 B2 JP 3876401B2 JP 22526699 A JP22526699 A JP 22526699A JP 22526699 A JP22526699 A JP 22526699A JP 3876401 B2 JP3876401 B2 JP 3876401B2
Authority
JP
Japan
Prior art keywords
layer
silicide
composition ratio
thickness
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP22526699A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001053027A (ja
JP2001053027A5 (enExample
Inventor
和人 池田
康夫 松宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22526699A priority Critical patent/JP3876401B2/ja
Publication of JP2001053027A publication Critical patent/JP2001053027A/ja
Publication of JP2001053027A5 publication Critical patent/JP2001053027A5/ja
Application granted granted Critical
Publication of JP3876401B2 publication Critical patent/JP3876401B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP22526699A 1999-08-09 1999-08-09 半導体装置の製造方法 Expired - Lifetime JP3876401B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22526699A JP3876401B2 (ja) 1999-08-09 1999-08-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22526699A JP3876401B2 (ja) 1999-08-09 1999-08-09 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001053027A JP2001053027A (ja) 2001-02-23
JP2001053027A5 JP2001053027A5 (enExample) 2005-06-16
JP3876401B2 true JP3876401B2 (ja) 2007-01-31

Family

ID=16826637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22526699A Expired - Lifetime JP3876401B2 (ja) 1999-08-09 1999-08-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP3876401B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100446300B1 (ko) 2002-05-30 2004-08-30 삼성전자주식회사 반도체 소자의 금속 배선 형성 방법
JP2004172541A (ja) 2002-11-22 2004-06-17 Renesas Technology Corp 半導体装置の製造方法
US6891192B2 (en) * 2003-08-04 2005-05-10 International Business Machines Corporation Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions
US20050253205A1 (en) * 2004-05-17 2005-11-17 Fujitsu Limited Semiconductor device and method for fabricating the same
JP2006351581A (ja) 2005-06-13 2006-12-28 Fujitsu Ltd 半導体装置の製造方法
US20070238236A1 (en) * 2006-03-28 2007-10-11 Cook Ted Jr Structure and fabrication method of a selectively deposited capping layer on an epitaxially grown source drain
US7544997B2 (en) * 2007-02-16 2009-06-09 Freescale Semiconductor, Inc. Multi-layer source/drain stressor
JP2009043916A (ja) 2007-08-08 2009-02-26 Toshiba Corp 半導体装置及びその製造方法
JP2009123960A (ja) * 2007-11-15 2009-06-04 Toshiba Corp 半導体装置
US12062579B2 (en) * 2020-10-30 2024-08-13 Applied Materials, Inc. Method of simultaneous silicidation on source and drain of NMOS and PMOS transistors

Also Published As

Publication number Publication date
JP2001053027A (ja) 2001-02-23

Similar Documents

Publication Publication Date Title
JP2978736B2 (ja) 半導体装置の製造方法
US6806534B2 (en) Damascene method for improved MOS transistor
JP2630290B2 (ja) 半導体装置の製造方法
JP3209164B2 (ja) 半導体装置の製造方法
JPH11111980A (ja) 半導体装置及びその製造方法
JPH10284728A (ja) コバルトシリサイド膜を有するｍｏｓｆｅｔの製造方法
JP2008004776A (ja) 半導体装置およびその製造方法
JP2925008B2 (ja) 半導体装置の製造方法
JP3876401B2 (ja) 半導体装置の製造方法
JP2010109122A (ja) 半導体装置および半導体装置の製造方法
JPH11284179A (ja) 半導体装置およびその製造方法
JP2009164200A (ja) 半導体装置及びその製造方法
JP3496723B2 (ja) 半導体装置の製造方法
JPH05315286A (ja) 半導体装置の電極部及び電極部の形成方法
JP3948290B2 (ja) 半導体装置の製造方法
JP3581253B2 (ja) 半導体装置およびその製造方法
JPH10313117A (ja) Ｍｉｓトランジスタ及びその製造方法
JP3572561B2 (ja) 半導体装置の製造方法
JPH09219516A (ja) Ｎチャネルｍｏｓ型半導体素子及び半導体素子の製造方法
JP2004228351A (ja) 半導体装置及びその製造方法
KR100620235B1 (ko) 타이타늄 실리사이드 제조 방법
JP2014036213A (ja) 半導体装置およびその製造方法
KR100264209B1 (ko) 반도체장치의 제조방법
JP2008085306A (ja) 半導体装置および半導体装置の製造方法
JP3918218B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040917

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040917

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060110

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060309

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060725

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060922

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20061017

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20061019

R150 Certificate of patent or registration of utility model

Ref document number: 3876401

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091110

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101110

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101110

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111110

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111110

Year of fee payment: 5

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111110

Year of fee payment: 5

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111110

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121110

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121110

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131110

Year of fee payment: 7

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term