JP3839710B2 - 半導体光変調器、マッハツェンダ型光変調器、及び光変調器一体型半導体レーザ - Google Patents

半導体光変調器、マッハツェンダ型光変調器、及び光変調器一体型半導体レーザ

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Publication number
JP3839710B2
JP3839710B2 JP2001376557A JP2001376557A JP3839710B2 JP 3839710 B2 JP3839710 B2 JP 3839710B2 JP 2001376557 A JP2001376557 A JP 2001376557A JP 2001376557 A JP2001376557 A JP 2001376557A JP 3839710 B2 JP3839710 B2 JP 3839710B2
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JP
Japan
Prior art keywords
optical
layer
optical waveguide
semiconductor
modulator
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Expired - Lifetime
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JP2001376557A
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English (en)
Japanese (ja)
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JP2003177368A5 (enrdf_load_stackoverflow
JP2003177368A (ja
Inventor
茂昭 関口
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Fujitsu Ltd
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Fujitsu Ltd
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Priority to JP2001376557A priority Critical patent/JP3839710B2/ja
Publication of JP2003177368A publication Critical patent/JP2003177368A/ja
Publication of JP2003177368A5 publication Critical patent/JP2003177368A5/ja
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Publication of JP3839710B2 publication Critical patent/JP3839710B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
JP2001376557A 2001-12-11 2001-12-11 半導体光変調器、マッハツェンダ型光変調器、及び光変調器一体型半導体レーザ Expired - Lifetime JP3839710B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001376557A JP3839710B2 (ja) 2001-12-11 2001-12-11 半導体光変調器、マッハツェンダ型光変調器、及び光変調器一体型半導体レーザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001376557A JP3839710B2 (ja) 2001-12-11 2001-12-11 半導体光変調器、マッハツェンダ型光変調器、及び光変調器一体型半導体レーザ

Publications (3)

Publication Number Publication Date
JP2003177368A JP2003177368A (ja) 2003-06-27
JP2003177368A5 JP2003177368A5 (enrdf_load_stackoverflow) 2005-06-16
JP3839710B2 true JP3839710B2 (ja) 2006-11-01

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JP2001376557A Expired - Lifetime JP3839710B2 (ja) 2001-12-11 2001-12-11 半導体光変調器、マッハツェンダ型光変調器、及び光変調器一体型半導体レーザ

Country Status (1)

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JP (1) JP3839710B2 (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6836351B2 (en) * 2002-10-30 2004-12-28 Northrop Grumman Corporation Quantum-confined stark effect quantum-dot optical modulator
US6933583B2 (en) * 2003-04-10 2005-08-23 Northrop Grumman Corporation In-phase RF drive of Mach-Zehnder modulator push-pull electrodes by using coupled quantum well optical active region
JP2005025086A (ja) * 2003-07-01 2005-01-27 Yokogawa Electric Corp 光スイッチ及びその製造方法
EP1672410A4 (en) 2003-10-03 2008-02-20 Ntt Electronics Corp PHOTO ELECTRON SEMICONDUCTOR WAVEGUIDE
EP1730586A1 (en) 2004-03-31 2006-12-13 Pirelli & C. S.p.A. Optical modulator
EP2317371B1 (en) * 2005-03-08 2014-12-24 Nippon Telegraph And Telephone Corporation Semiconductor optical modulator
JP4494257B2 (ja) * 2005-03-08 2010-06-30 日本電信電話株式会社 光変調器
JP2007134480A (ja) * 2005-11-10 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> 波長可変光源
JP2007133286A (ja) * 2005-11-14 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> 波長合分波器
JP5553075B2 (ja) * 2006-08-10 2014-07-16 三菱電機株式会社 半導体光集積素子
JP4818968B2 (ja) * 2007-03-23 2011-11-16 日本電信電話株式会社 光処理回路
JP2008282937A (ja) * 2007-05-10 2008-11-20 Nippon Telegr & Teleph Corp <Ntt> 波長可変光源
WO2009119145A1 (ja) * 2008-03-28 2009-10-01 日本電気株式会社 導波路型半導体光変調器及びその製造方法
JP5104598B2 (ja) * 2008-06-30 2012-12-19 富士通株式会社 マッハツェンダ型光変調器
JP5515927B2 (ja) * 2010-03-24 2014-06-11 住友電気工業株式会社 半導体光素子
JP2013153015A (ja) * 2012-01-24 2013-08-08 Mitsubishi Electric Corp 光変調器集積光源
JP6006611B2 (ja) * 2012-10-24 2016-10-12 日本電信電話株式会社 半導体光変調素子
JP6291849B2 (ja) * 2014-01-10 2018-03-14 三菱電機株式会社 半導体装置の製造方法、半導体装置
JP6417346B2 (ja) * 2016-03-03 2018-11-07 日本電信電話株式会社 半導体マッハツェンダ光変調器
KR20240095181A (ko) * 2021-09-14 2024-06-25 스마트 포토닉스 홀딩 비.브이. 전자 광학 변조기

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