JP3834103B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

Info

Publication number
JP3834103B2
JP3834103B2 JP16457496A JP16457496A JP3834103B2 JP 3834103 B2 JP3834103 B2 JP 3834103B2 JP 16457496 A JP16457496 A JP 16457496A JP 16457496 A JP16457496 A JP 16457496A JP 3834103 B2 JP3834103 B2 JP 3834103B2
Authority
JP
Japan
Prior art keywords
power supply
supply voltage
internal
bank
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16457496A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09161481A (ja
JPH09161481A5 (enExample
Inventor
忠昭 山内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP16457496A priority Critical patent/JP3834103B2/ja
Publication of JPH09161481A publication Critical patent/JPH09161481A/ja
Publication of JPH09161481A5 publication Critical patent/JPH09161481A5/ja
Application granted granted Critical
Publication of JP3834103B2 publication Critical patent/JP3834103B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP16457496A 1995-10-06 1996-06-25 半導体記憶装置 Expired - Fee Related JP3834103B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16457496A JP3834103B2 (ja) 1995-10-06 1996-06-25 半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP26016195 1995-10-06
JP7-260161 1995-10-06
JP16457496A JP3834103B2 (ja) 1995-10-06 1996-06-25 半導体記憶装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2005299186A Division JP2006040536A (ja) 1995-10-06 2005-10-13 半導体記憶装置
JP2006172608A Division JP4549317B2 (ja) 1995-10-06 2006-06-22 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH09161481A JPH09161481A (ja) 1997-06-20
JPH09161481A5 JPH09161481A5 (enExample) 2006-01-19
JP3834103B2 true JP3834103B2 (ja) 2006-10-18

Family

ID=26489620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16457496A Expired - Fee Related JP3834103B2 (ja) 1995-10-06 1996-06-25 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP3834103B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4017248B2 (ja) 1998-04-10 2007-12-05 株式会社日立製作所 半導体装置
US6628564B1 (en) 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials
US7336121B2 (en) * 2001-05-04 2008-02-26 Samsung Electronics Co., Ltd. Negative voltage generator for a semiconductor memory device
DE10356420A1 (de) * 2002-12-02 2004-06-24 Samsung Electronics Co., Ltd., Suwon Spannungsgeneratorschaltung

Also Published As

Publication number Publication date
JPH09161481A (ja) 1997-06-20

Similar Documents

Publication Publication Date Title
JP4627827B2 (ja) 半導体集積回路装置
KR100708602B1 (ko) 반도체집적회로
US5933383A (en) DRAM having a power supply voltage lowering circuit
JP3124781B2 (ja) 半導体集積回路装置
US6188637B1 (en) Semiconductor memory device allowing reduction in power consumption during standby
KR100203344B1 (ko) 내부 전압의 공급능력이 제어 가능한 반도체 기억장치
JP2001067868A (ja) 半導体記憶装置
US8036058B2 (en) Symmetrically operating single-ended input buffer devices and methods
JPH10269768A (ja) 半導体集積回路
US7319620B2 (en) Input and output buffers having symmetrical operating characteristics and immunity from voltage variations
JP2000331478A (ja) メモリデバイス
JPH09147557A (ja) 半導体記憶装置および半導体装置
JP2002074960A (ja) 半導体記憶装置
JP3834103B2 (ja) 半導体記憶装置
JP2001126477A (ja) 半導体集積回路
KR980012445A (ko) 멀티 뱅크 메모리장치
KR100378690B1 (ko) 대기전류를감소시킨반도체메모리용고전원발생장치
US5990729A (en) Semiconductor integrated circuit having first and second voltage step down circuits
JP4549317B2 (ja) 半導体記憶装置
JP4841658B2 (ja) 半導体記憶装置
US11158362B2 (en) Semiconductor memory device
JP2006040536A (ja) 半導体記憶装置
JPH0748318B2 (ja) 半導体記憶回路およびそのテスト方法
JP4368994B2 (ja) 半導体装置
JP2003168300A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051013

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060425

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060622

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060718

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060721

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100728

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110728

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110728

Year of fee payment: 5

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110728

Year of fee payment: 5

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120728

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120728

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130728

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees