JP3830473B2 - 基準電圧発生回路 - Google Patents
基準電圧発生回路 Download PDFInfo
- Publication number
- JP3830473B2 JP3830473B2 JP2003270955A JP2003270955A JP3830473B2 JP 3830473 B2 JP3830473 B2 JP 3830473B2 JP 2003270955 A JP2003270955 A JP 2003270955A JP 2003270955 A JP2003270955 A JP 2003270955A JP 3830473 B2 JP3830473 B2 JP 3830473B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- potential
- reference voltage
- power supply
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003270955A JP3830473B2 (ja) | 2003-07-04 | 2003-07-04 | 基準電圧発生回路 |
| US10/798,358 US7084614B2 (en) | 2003-07-04 | 2004-03-12 | Reference voltage generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003270955A JP3830473B2 (ja) | 2003-07-04 | 2003-07-04 | 基準電圧発生回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005025698A JP2005025698A (ja) | 2005-01-27 |
| JP2005025698A5 JP2005025698A5 (enExample) | 2006-03-16 |
| JP3830473B2 true JP3830473B2 (ja) | 2006-10-04 |
Family
ID=33549943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003270955A Expired - Fee Related JP3830473B2 (ja) | 2003-07-04 | 2003-07-04 | 基準電圧発生回路 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7084614B2 (enExample) |
| JP (1) | JP3830473B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4374254B2 (ja) * | 2004-01-27 | 2009-12-02 | Okiセミコンダクタ株式会社 | バイアス電圧発生回路 |
| US9164404B2 (en) * | 2008-09-19 | 2015-10-20 | Intel Corporation | System and process for fabricating semiconductor packages |
| KR101939147B1 (ko) * | 2012-03-09 | 2019-01-16 | 에스케이하이닉스 주식회사 | 가변 기준전압 발생회로 및 이를 포함한 아날로그 디지털 변환기 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3527971B2 (ja) | 1995-10-06 | 2004-05-17 | 新日本無線株式会社 | バイアス回路 |
| JPH10163842A (ja) * | 1996-11-25 | 1998-06-19 | Fujitsu Ltd | 半導体集積回路 |
| US5923211A (en) * | 1997-05-21 | 1999-07-13 | Advanced Micro Devices, Inc. | Reference voltage generation scheme for gate oxide protected circuits |
| JP3385995B2 (ja) * | 1999-03-01 | 2003-03-10 | 日本電気株式会社 | 過電流検出回路及びこれを内蔵した半導体集積回路 |
| US6236273B1 (en) * | 1999-11-18 | 2001-05-22 | Pairgain Technologies, Inc. | High efficiency power amplifier |
-
2003
- 2003-07-04 JP JP2003270955A patent/JP3830473B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-12 US US10/798,358 patent/US7084614B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005025698A (ja) | 2005-01-27 |
| US7084614B2 (en) | 2006-08-01 |
| US20050001604A1 (en) | 2005-01-06 |
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