JP3816638B2 - 化学増幅型レジスト組成物 - Google Patents

化学増幅型レジスト組成物 Download PDF

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Publication number
JP3816638B2
JP3816638B2 JP19897997A JP19897997A JP3816638B2 JP 3816638 B2 JP3816638 B2 JP 3816638B2 JP 19897997 A JP19897997 A JP 19897997A JP 19897997 A JP19897997 A JP 19897997A JP 3816638 B2 JP3816638 B2 JP 3816638B2
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Japan
Prior art keywords
group
acid
tert
chemically amplified
resist composition
Prior art date
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Expired - Fee Related
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JP19897997A
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English (en)
Japanese (ja)
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JPH1090884A (ja
JPH1090884A5 (enExample
Inventor
和行 新田
和史 佐藤
晃義 山崎
与日 坂井
寿昌 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
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Priority to JP19897997A priority Critical patent/JP3816638B2/ja
Publication of JPH1090884A publication Critical patent/JPH1090884A/ja
Publication of JPH1090884A5 publication Critical patent/JPH1090884A5/ja
Application granted granted Critical
Publication of JP3816638B2 publication Critical patent/JP3816638B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP19897997A 1996-07-24 1997-07-24 化学増幅型レジスト組成物 Expired - Fee Related JP3816638B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19897997A JP3816638B2 (ja) 1996-07-24 1997-07-24 化学増幅型レジスト組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-195098 1996-07-24
JP19509896 1996-07-24
JP19897997A JP3816638B2 (ja) 1996-07-24 1997-07-24 化学増幅型レジスト組成物

Publications (3)

Publication Number Publication Date
JPH1090884A JPH1090884A (ja) 1998-04-10
JPH1090884A5 JPH1090884A5 (enExample) 2004-10-21
JP3816638B2 true JP3816638B2 (ja) 2006-08-30

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ID=26508924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19897997A Expired - Fee Related JP3816638B2 (ja) 1996-07-24 1997-07-24 化学増幅型レジスト組成物

Country Status (1)

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JP (1) JP3816638B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395446B1 (en) 1999-10-06 2002-05-28 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP4991074B2 (ja) * 2000-02-27 2012-08-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 光反応性酸発生剤およびそれを含有してなるフォトレジスト
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
TWI225968B (en) 2001-09-28 2005-01-01 Shinetsu Chemical Co Novel sulfonyliazomethanes, photoacid generators, resist compositions, and patterning process
TW200405128A (en) 2002-05-01 2004-04-01 Shinetsu Chemical Co Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
JP3991223B2 (ja) 2003-02-13 2007-10-17 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法
JP3991222B2 (ja) 2003-02-13 2007-10-17 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法
JP4359467B2 (ja) 2003-08-28 2009-11-04 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法。

Also Published As

Publication number Publication date
JPH1090884A (ja) 1998-04-10

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