JP3810246B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP3810246B2
JP3810246B2 JP2000071795A JP2000071795A JP3810246B2 JP 3810246 B2 JP3810246 B2 JP 3810246B2 JP 2000071795 A JP2000071795 A JP 2000071795A JP 2000071795 A JP2000071795 A JP 2000071795A JP 3810246 B2 JP3810246 B2 JP 3810246B2
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Prior art keywords
semiconductor region
semiconductor
terminal
region
electrically connected
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Expired - Fee Related
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JP2000071795A
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English (en)
Japanese (ja)
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JP2001267433A5 (enExample
JP2001267433A (ja
Inventor
嘉靖 田代
信博 笠
幸祐 奥山
裕康 石塚
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2000071795A priority Critical patent/JP3810246B2/ja
Priority to TW090104497A priority patent/TW517353B/zh
Priority to US09/804,193 priority patent/US6621108B2/en
Priority to KR1020010013105A priority patent/KR100698990B1/ko
Publication of JP2001267433A publication Critical patent/JP2001267433A/ja
Publication of JP2001267433A5 publication Critical patent/JP2001267433A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2000071795A 2000-03-15 2000-03-15 半導体装置および半導体装置の製造方法 Expired - Fee Related JP3810246B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000071795A JP3810246B2 (ja) 2000-03-15 2000-03-15 半導体装置および半導体装置の製造方法
TW090104497A TW517353B (en) 2000-03-15 2001-02-27 Semiconductor device and manufacturing method of the semiconductor device
US09/804,193 US6621108B2 (en) 2000-03-15 2001-03-13 Semiconductor device and the process of manufacturing the semiconductor device
KR1020010013105A KR100698990B1 (ko) 2000-03-15 2001-03-14 반도체 장치 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000071795A JP3810246B2 (ja) 2000-03-15 2000-03-15 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001267433A JP2001267433A (ja) 2001-09-28
JP2001267433A5 JP2001267433A5 (enExample) 2005-02-03
JP3810246B2 true JP3810246B2 (ja) 2006-08-16

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JP2000071795A Expired - Fee Related JP3810246B2 (ja) 2000-03-15 2000-03-15 半導体装置および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6621108B2 (enExample)
JP (1) JP3810246B2 (enExample)
KR (1) KR100698990B1 (enExample)
TW (1) TW517353B (enExample)

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DE60130028T2 (de) * 2000-11-06 2008-06-26 Sarnoff Corp. Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern
US7020857B2 (en) * 2002-05-20 2006-03-28 International Business Machines Corporation Method and apparatus for providing noise suppression in a integrated circuit
JP4146672B2 (ja) 2002-06-14 2008-09-10 シャープ株式会社 静電気保護素子
US6873015B2 (en) 2002-10-02 2005-03-29 Micron Technology, Inc. Semiconductor constructions comprising three-dimensional thin film transistor devices and resistors
US7808047B1 (en) * 2002-11-14 2010-10-05 Altera Corporation I/O ESD protection device for high performance circuits
JP4318511B2 (ja) * 2003-08-26 2009-08-26 三洋電機株式会社 昇圧回路
JP4065855B2 (ja) * 2004-01-21 2008-03-26 株式会社日立製作所 生体および化学試料検査装置
US6936514B1 (en) 2004-04-05 2005-08-30 Advanced Micro Devices, Inc. Semiconductor component and method
KR100679943B1 (ko) 2004-11-10 2007-02-08 주식회사 하이닉스반도체 낮은 촉발전압에서 동작이 가능한 실리콘제어정류기구조의 정전기방전 보호 회로
US7223640B2 (en) * 2005-03-03 2007-05-29 Advanced Micro Devices, Inc. Semiconductor component and method of manufacture
US20070102789A1 (en) * 2005-11-09 2007-05-10 International Business Machines Corporation Bipolar transistor and back-gated transistor structure and method
JP5243773B2 (ja) * 2006-12-12 2013-07-24 株式会社豊田中央研究所 静電気保護用半導体装置
JP2008205271A (ja) * 2007-02-21 2008-09-04 Matsushita Electric Ind Co Ltd 半導体保護回路およびその製造方法、半導体保護回路の動作方法
US7876602B2 (en) * 2007-06-18 2011-01-25 Bae Systems Information And Electronic Systems Integration Inc. Single-event upset immune static random access memory cell circuit, system, and method
US8334575B2 (en) * 2008-10-03 2012-12-18 Freescale Semiconductor, Inc. Semiconductor device and electronic device
EP2374070B1 (en) 2008-12-30 2017-06-28 Telecom Italia S.p.A. Method and system for content classification
FR3001085A1 (fr) * 2013-01-15 2014-07-18 St Microelectronics Sa Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement
JP2014165245A (ja) * 2013-02-22 2014-09-08 Toyota Central R&D Labs Inc 静電気保護用半導体装置
US9438034B2 (en) * 2014-01-15 2016-09-06 Nanya Technology Corporation Transient voltage suppressor
US9287254B2 (en) * 2014-01-30 2016-03-15 Stmicroelectronics S.A. Electronic device and protection circuit
US9871126B2 (en) * 2014-06-16 2018-01-16 Infineon Technologies Ag Discrete semiconductor transistor
US10411006B2 (en) * 2016-05-09 2019-09-10 Infineon Technologies Ag Poly silicon based interface protection
US10600776B2 (en) 2017-02-24 2020-03-24 Nxp B.V. Device and method for electrostatic discharge (ESD) protection
US10361186B1 (en) * 2018-02-07 2019-07-23 Infineon Technologies Ag Suppression of parasitic discharge path in an electrical circuit
JP7079638B2 (ja) * 2018-03-29 2022-06-02 ローム株式会社 半導体素子
CN114503256B (zh) * 2019-10-18 2024-09-06 株式会社索思未来 半导体集成电路装置
CN111627902B (zh) * 2020-06-04 2022-06-24 电子科技大学 一种具有sgt和晶闸管的可编程过电压保护器件
CN111627903B (zh) * 2020-06-04 2022-06-24 电子科技大学 一种具有u-mosfet和晶闸管的可编程过电压保护器件
JP6818931B1 (ja) * 2020-09-10 2021-01-27 善文 安藤 真空チャネル電界効果トランジスタ、その製造方法及び半導体装置
US20240128262A1 (en) 2022-10-18 2024-04-18 Mediatek Inc. Bipolar junction transistor (bjt) structure

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US5181091A (en) * 1988-04-29 1993-01-19 Dallas Semiconductor Corp. Integrated circuit with improved protection against negative transients
EP0538507B1 (de) * 1991-10-22 1996-12-27 Deutsche ITT Industries GmbH Schutzschaltung für Anschlusskontakte von monolithisch integrierten Schaltungen
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JPH0837238A (ja) * 1994-07-21 1996-02-06 Hitachi Ltd 半導体集積回路装置
JPH08306872A (ja) 1995-05-01 1996-11-22 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓ入力保護回路
US6064093A (en) * 1996-03-29 2000-05-16 Citizen Watch Co., Ltd. Protection circuit with clamping feature for semiconductor device
US6121661A (en) * 1996-12-11 2000-09-19 International Business Machines Corporation Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
JP4256544B2 (ja) * 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路

Also Published As

Publication number Publication date
KR20010092313A (ko) 2001-10-24
KR100698990B1 (ko) 2007-03-26
TW517353B (en) 2003-01-11
US6621108B2 (en) 2003-09-16
US20010025963A1 (en) 2001-10-04
JP2001267433A (ja) 2001-09-28

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