KR100698990B1 - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR100698990B1
KR100698990B1 KR1020010013105A KR20010013105A KR100698990B1 KR 100698990 B1 KR100698990 B1 KR 100698990B1 KR 1020010013105 A KR1020010013105 A KR 1020010013105A KR 20010013105 A KR20010013105 A KR 20010013105A KR 100698990 B1 KR100698990 B1 KR 100698990B1
Authority
KR
South Korea
Prior art keywords
semiconductor region
semiconductor
terminal
circuit
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010013105A
Other languages
English (en)
Korean (ko)
Other versions
KR20010092313A (ko
Inventor
다시로요시야스
가사노부히로
오꾸야마고우스께
이시즈까야스히로
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
가부시기가이샤 히다치초엘에스아이시스템즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히타치세이사쿠쇼, 가부시기가이샤 히다치초엘에스아이시스템즈 filed Critical 가부시키가이샤 히타치세이사쿠쇼
Publication of KR20010092313A publication Critical patent/KR20010092313A/ko
Application granted granted Critical
Publication of KR100698990B1 publication Critical patent/KR100698990B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020010013105A 2000-03-15 2001-03-14 반도체 장치 및 반도체 장치의 제조 방법 Expired - Fee Related KR100698990B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-071795 2000-03-15
JP2000071795A JP3810246B2 (ja) 2000-03-15 2000-03-15 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20010092313A KR20010092313A (ko) 2001-10-24
KR100698990B1 true KR100698990B1 (ko) 2007-03-26

Family

ID=18590310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010013105A Expired - Fee Related KR100698990B1 (ko) 2000-03-15 2001-03-14 반도체 장치 및 반도체 장치의 제조 방법

Country Status (4)

Country Link
US (1) US6621108B2 (enExample)
JP (1) JP3810246B2 (enExample)
KR (1) KR100698990B1 (enExample)
TW (1) TW517353B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60130028T2 (de) * 2000-11-06 2008-06-26 Sarnoff Corp. Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern
US7020857B2 (en) * 2002-05-20 2006-03-28 International Business Machines Corporation Method and apparatus for providing noise suppression in a integrated circuit
JP4146672B2 (ja) 2002-06-14 2008-09-10 シャープ株式会社 静電気保護素子
US6873015B2 (en) 2002-10-02 2005-03-29 Micron Technology, Inc. Semiconductor constructions comprising three-dimensional thin film transistor devices and resistors
US7808047B1 (en) * 2002-11-14 2010-10-05 Altera Corporation I/O ESD protection device for high performance circuits
JP4318511B2 (ja) * 2003-08-26 2009-08-26 三洋電機株式会社 昇圧回路
JP4065855B2 (ja) * 2004-01-21 2008-03-26 株式会社日立製作所 生体および化学試料検査装置
US6936514B1 (en) 2004-04-05 2005-08-30 Advanced Micro Devices, Inc. Semiconductor component and method
KR100679943B1 (ko) 2004-11-10 2007-02-08 주식회사 하이닉스반도체 낮은 촉발전압에서 동작이 가능한 실리콘제어정류기구조의 정전기방전 보호 회로
US7223640B2 (en) * 2005-03-03 2007-05-29 Advanced Micro Devices, Inc. Semiconductor component and method of manufacture
US20070102789A1 (en) * 2005-11-09 2007-05-10 International Business Machines Corporation Bipolar transistor and back-gated transistor structure and method
JP5243773B2 (ja) * 2006-12-12 2013-07-24 株式会社豊田中央研究所 静電気保護用半導体装置
JP2008205271A (ja) * 2007-02-21 2008-09-04 Matsushita Electric Ind Co Ltd 半導体保護回路およびその製造方法、半導体保護回路の動作方法
US7876602B2 (en) * 2007-06-18 2011-01-25 Bae Systems Information And Electronic Systems Integration Inc. Single-event upset immune static random access memory cell circuit, system, and method
US8334575B2 (en) * 2008-10-03 2012-12-18 Freescale Semiconductor, Inc. Semiconductor device and electronic device
US9916381B2 (en) 2008-12-30 2018-03-13 Telecom Italia S.P.A. Method and system for content classification
FR3001085A1 (fr) * 2013-01-15 2014-07-18 St Microelectronics Sa Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement
JP2014165245A (ja) * 2013-02-22 2014-09-08 Toyota Central R&D Labs Inc 静電気保護用半導体装置
US9438034B2 (en) 2014-01-15 2016-09-06 Nanya Technology Corporation Transient voltage suppressor
US9287254B2 (en) * 2014-01-30 2016-03-15 Stmicroelectronics S.A. Electronic device and protection circuit
US9871126B2 (en) * 2014-06-16 2018-01-16 Infineon Technologies Ag Discrete semiconductor transistor
US10411006B2 (en) * 2016-05-09 2019-09-10 Infineon Technologies Ag Poly silicon based interface protection
US10600776B2 (en) * 2017-02-24 2020-03-24 Nxp B.V. Device and method for electrostatic discharge (ESD) protection
US10361186B1 (en) * 2018-02-07 2019-07-23 Infineon Technologies Ag Suppression of parasitic discharge path in an electrical circuit
JP7079638B2 (ja) * 2018-03-29 2022-06-02 ローム株式会社 半導体素子
JP7610127B2 (ja) * 2019-10-18 2025-01-08 株式会社ソシオネクスト 半導体集積回路装置
CN111627903B (zh) * 2020-06-04 2022-06-24 电子科技大学 一种具有u-mosfet和晶闸管的可编程过电压保护器件
CN111627902B (zh) * 2020-06-04 2022-06-24 电子科技大学 一种具有sgt和晶闸管的可编程过电压保护器件
JP6818931B1 (ja) * 2020-09-10 2021-01-27 善文 安藤 真空チャネル電界効果トランジスタ、その製造方法及び半導体装置
US20240128262A1 (en) 2022-10-18 2024-04-18 Mediatek Inc. Bipolar junction transistor (bjt) structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181091A (en) * 1988-04-29 1993-01-19 Dallas Semiconductor Corp. Integrated circuit with improved protection against negative transients
US5438213A (en) * 1991-12-31 1995-08-01 Sgs-Thomson Microelectronics, S.A. General protection of an integrated circuit against permanent overloads and electrostatic discharges
US5679971A (en) * 1994-07-21 1997-10-21 Hitachi, Ltd. Semiconductor integrated circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0538507B1 (de) * 1991-10-22 1996-12-27 Deutsche ITT Industries GmbH Schutzschaltung für Anschlusskontakte von monolithisch integrierten Schaltungen
JPH08306872A (ja) 1995-05-01 1996-11-22 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓ入力保護回路
US6064093A (en) * 1996-03-29 2000-05-16 Citizen Watch Co., Ltd. Protection circuit with clamping feature for semiconductor device
US6121661A (en) * 1996-12-11 2000-09-19 International Business Machines Corporation Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
JP4256544B2 (ja) * 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181091A (en) * 1988-04-29 1993-01-19 Dallas Semiconductor Corp. Integrated circuit with improved protection against negative transients
US5438213A (en) * 1991-12-31 1995-08-01 Sgs-Thomson Microelectronics, S.A. General protection of an integrated circuit against permanent overloads and electrostatic discharges
US5679971A (en) * 1994-07-21 1997-10-21 Hitachi, Ltd. Semiconductor integrated circuit

Also Published As

Publication number Publication date
KR20010092313A (ko) 2001-10-24
TW517353B (en) 2003-01-11
JP3810246B2 (ja) 2006-08-16
US20010025963A1 (en) 2001-10-04
JP2001267433A (ja) 2001-09-28
US6621108B2 (en) 2003-09-16

Similar Documents

Publication Publication Date Title
KR100698990B1 (ko) 반도체 장치 및 반도체 장치의 제조 방법
JP4917172B2 (ja) 垂直型電流制御型シリコン・オン・インシュレータ（ｓｏｉ）デバイス及びそれを形成する方法
KR100325553B1 (ko) 반도체 집적회로의 정전기 보호장치, 그의 제조방법 및 그를사용한 정전기 보호회로
KR100456526B1 (ko) 식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법
KR100479135B1 (ko) 반도체 장치 및 그 제조 방법
US20040207021A1 (en) Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies
JP3675303B2 (ja) 静電気保護回路が内蔵された半導体装置及びその製造方法
US20070040222A1 (en) Method and apparatus for improved ESD performance
US5751042A (en) Internal ESD protection circuit for semiconductor devices
US5985722A (en) Method of fabricating electrostatic discharge device
JP3144330B2 (ja) 半導体装置
US5504362A (en) Electrostatic discharge protection device
US8513738B2 (en) ESD field-effect transistor and integrated diffusion resistor
JPWO1998020564A1 (ja) 半導体集積回路装置およびその製造方法
CN100552919C (zh) 半导体器件及其结构的制作方法
US20030205765A1 (en) Semiconductor device and method for manufacturing the same
JP3942192B2 (ja) 半導体集積回路装置およびその製造方法
US5610427A (en) Electrostatic protection device for use in semiconductor integrated circuit
JP2004363136A (ja) 半導体回路装置
JP3077742B2 (ja) 半導体装置及びその製造方法
JP3119902B2 (ja) 半導体装置およびその製造方法
JP3254549B2 (ja) 半導体装置及びその製造方法
KR100289838B1 (ko) 정전방전회로를 포함하는 반도체장치 및 그의 제조방법
US20110101458A1 (en) SOI type semiconductor device having a protection circuit
KR20020082400A (ko) Ｅｓｄ보호장치 및 그것의 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130227

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140220

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150224

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160219

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170317

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170317

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000