TW517353B - Semiconductor device and manufacturing method of the semiconductor device - Google Patents
Semiconductor device and manufacturing method of the semiconductor device Download PDFInfo
- Publication number
- TW517353B TW517353B TW090104497A TW90104497A TW517353B TW 517353 B TW517353 B TW 517353B TW 090104497 A TW090104497 A TW 090104497A TW 90104497 A TW90104497 A TW 90104497A TW 517353 B TW517353 B TW 517353B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- semiconductor region
- region
- layer
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 209
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 abstract description 11
- 230000001681 protective effect Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 78
- 239000012530 fluid Substances 0.000 description 23
- 239000004020 conductor Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000011425 bamboo Substances 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000012771 household material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
- H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000071795A JP3810246B2 (ja) | 2000-03-15 | 2000-03-15 | 半導体装置および半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW517353B true TW517353B (en) | 2003-01-11 |
Family
ID=18590310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090104497A TW517353B (en) | 2000-03-15 | 2001-02-27 | Semiconductor device and manufacturing method of the semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6621108B2 (enExample) |
| JP (1) | JP3810246B2 (enExample) |
| KR (1) | KR100698990B1 (enExample) |
| TW (1) | TW517353B (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60130028T2 (de) * | 2000-11-06 | 2008-06-26 | Sarnoff Corp. | Schutzvorrichtung gegen elektrostatische Entladung mit gesteuertem Siliziumgleichrichter mit externem On-Chip-Triggern und kompakten inneren Abmessungen für schnelles Triggern |
| US7020857B2 (en) * | 2002-05-20 | 2006-03-28 | International Business Machines Corporation | Method and apparatus for providing noise suppression in a integrated circuit |
| JP4146672B2 (ja) | 2002-06-14 | 2008-09-10 | シャープ株式会社 | 静電気保護素子 |
| US6873015B2 (en) | 2002-10-02 | 2005-03-29 | Micron Technology, Inc. | Semiconductor constructions comprising three-dimensional thin film transistor devices and resistors |
| US7808047B1 (en) * | 2002-11-14 | 2010-10-05 | Altera Corporation | I/O ESD protection device for high performance circuits |
| JP4318511B2 (ja) * | 2003-08-26 | 2009-08-26 | 三洋電機株式会社 | 昇圧回路 |
| JP4065855B2 (ja) * | 2004-01-21 | 2008-03-26 | 株式会社日立製作所 | 生体および化学試料検査装置 |
| US6936514B1 (en) | 2004-04-05 | 2005-08-30 | Advanced Micro Devices, Inc. | Semiconductor component and method |
| KR100679943B1 (ko) | 2004-11-10 | 2007-02-08 | 주식회사 하이닉스반도체 | 낮은 촉발전압에서 동작이 가능한 실리콘제어정류기구조의 정전기방전 보호 회로 |
| US7223640B2 (en) * | 2005-03-03 | 2007-05-29 | Advanced Micro Devices, Inc. | Semiconductor component and method of manufacture |
| US20070102789A1 (en) * | 2005-11-09 | 2007-05-10 | International Business Machines Corporation | Bipolar transistor and back-gated transistor structure and method |
| JP5243773B2 (ja) * | 2006-12-12 | 2013-07-24 | 株式会社豊田中央研究所 | 静電気保護用半導体装置 |
| JP2008205271A (ja) * | 2007-02-21 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 半導体保護回路およびその製造方法、半導体保護回路の動作方法 |
| US7876602B2 (en) * | 2007-06-18 | 2011-01-25 | Bae Systems Information And Electronic Systems Integration Inc. | Single-event upset immune static random access memory cell circuit, system, and method |
| US8334575B2 (en) * | 2008-10-03 | 2012-12-18 | Freescale Semiconductor, Inc. | Semiconductor device and electronic device |
| EP2374070B1 (en) | 2008-12-30 | 2017-06-28 | Telecom Italia S.p.A. | Method and system for content classification |
| FR3001085A1 (fr) * | 2013-01-15 | 2014-07-18 | St Microelectronics Sa | Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement |
| JP2014165245A (ja) * | 2013-02-22 | 2014-09-08 | Toyota Central R&D Labs Inc | 静電気保護用半導体装置 |
| US9438034B2 (en) * | 2014-01-15 | 2016-09-06 | Nanya Technology Corporation | Transient voltage suppressor |
| US9287254B2 (en) * | 2014-01-30 | 2016-03-15 | Stmicroelectronics S.A. | Electronic device and protection circuit |
| US9871126B2 (en) * | 2014-06-16 | 2018-01-16 | Infineon Technologies Ag | Discrete semiconductor transistor |
| US10411006B2 (en) * | 2016-05-09 | 2019-09-10 | Infineon Technologies Ag | Poly silicon based interface protection |
| US10600776B2 (en) | 2017-02-24 | 2020-03-24 | Nxp B.V. | Device and method for electrostatic discharge (ESD) protection |
| US10361186B1 (en) * | 2018-02-07 | 2019-07-23 | Infineon Technologies Ag | Suppression of parasitic discharge path in an electrical circuit |
| JP7079638B2 (ja) * | 2018-03-29 | 2022-06-02 | ローム株式会社 | 半導体素子 |
| CN114503256B (zh) * | 2019-10-18 | 2024-09-06 | 株式会社索思未来 | 半导体集成电路装置 |
| CN111627902B (zh) * | 2020-06-04 | 2022-06-24 | 电子科技大学 | 一种具有sgt和晶闸管的可编程过电压保护器件 |
| CN111627903B (zh) * | 2020-06-04 | 2022-06-24 | 电子科技大学 | 一种具有u-mosfet和晶闸管的可编程过电压保护器件 |
| JP6818931B1 (ja) * | 2020-09-10 | 2021-01-27 | 善文 安藤 | 真空チャネル電界効果トランジスタ、その製造方法及び半導体装置 |
| US20240128262A1 (en) | 2022-10-18 | 2024-04-18 | Mediatek Inc. | Bipolar junction transistor (bjt) structure |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5181091A (en) * | 1988-04-29 | 1993-01-19 | Dallas Semiconductor Corp. | Integrated circuit with improved protection against negative transients |
| EP0538507B1 (de) * | 1991-10-22 | 1996-12-27 | Deutsche ITT Industries GmbH | Schutzschaltung für Anschlusskontakte von monolithisch integrierten Schaltungen |
| FR2685817B1 (fr) * | 1991-12-31 | 1994-03-11 | Sgs Thomson Microelectronics Sa | Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques. |
| JPH0837238A (ja) * | 1994-07-21 | 1996-02-06 | Hitachi Ltd | 半導体集積回路装置 |
| JPH08306872A (ja) | 1995-05-01 | 1996-11-22 | Nippon Telegr & Teleph Corp <Ntt> | Ｍｏｓ入力保護回路 |
| US6064093A (en) * | 1996-03-29 | 2000-05-16 | Citizen Watch Co., Ltd. | Protection circuit with clamping feature for semiconductor device |
| US6121661A (en) * | 1996-12-11 | 2000-09-19 | International Business Machines Corporation | Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation |
| JP4256544B2 (ja) * | 1998-08-25 | 2009-04-22 | シャープ株式会社 | 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路 |
-
2000
- 2000-03-15 JP JP2000071795A patent/JP3810246B2/ja not_active Expired - Fee Related
-
2001
- 2001-02-27 TW TW090104497A patent/TW517353B/zh not_active IP Right Cessation
- 2001-03-13 US US09/804,193 patent/US6621108B2/en not_active Expired - Lifetime
- 2001-03-14 KR KR1020010013105A patent/KR100698990B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010092313A (ko) | 2001-10-24 |
| KR100698990B1 (ko) | 2007-03-26 |
| US6621108B2 (en) | 2003-09-16 |
| US20010025963A1 (en) | 2001-10-04 |
| JP3810246B2 (ja) | 2006-08-16 |
| JP2001267433A (ja) | 2001-09-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |