JP3806521B2 - 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体 - Google Patents

透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体 Download PDF

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JP3806521B2
JP3806521B2 JP24217698A JP24217698A JP3806521B2 JP 3806521 B2 JP3806521 B2 JP 3806521B2 JP 24217698 A JP24217698 A JP 24217698A JP 24217698 A JP24217698 A JP 24217698A JP 3806521 B2 JP3806521 B2 JP 3806521B2
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film
transparent conductive
conductive film
resistance
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JP2000077358A5 (enExample
JP2000077358A (ja
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彰 光井
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AGC Ceramics Co Ltd
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Asahi Glass Ceramics Co Ltd
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JP24217698A 1998-08-27 1998-08-27 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体 Expired - Fee Related JP3806521B2 (ja)

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JP24217698A JP3806521B2 (ja) 1998-08-27 1998-08-27 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体

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JP24217698A JP3806521B2 (ja) 1998-08-27 1998-08-27 透明導電膜、スパッタリングターゲットおよび透明導電膜付き基体

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JP2000077358A5 JP2000077358A5 (enExample) 2005-03-10
JP3806521B2 true JP3806521B2 (ja) 2006-08-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766121B (zh) * 2017-11-15 2022-06-01 日商三井金屬鑛業股份有限公司 氧化物燒結體及濺鍍靶

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* Cited by examiner, † Cited by third party
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JP4625558B2 (ja) * 2000-04-24 2011-02-02 東ソー株式会社 透明導電膜およびその製造方法並びにその用途
KR101002504B1 (ko) * 2001-08-02 2010-12-17 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 투명 전도막 및 이들의 제조방법
KR100647279B1 (ko) * 2003-11-14 2006-11-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
JP2006289901A (ja) * 2005-04-14 2006-10-26 Asahi Glass Co Ltd 反射防止フィルムおよびディスプレイ装置
JP5098151B2 (ja) * 2005-10-31 2012-12-12 凸版印刷株式会社 薄膜トランジスタの製造方法
JP2008020850A (ja) * 2006-07-14 2008-01-31 Seiko Epson Corp 液晶装置、液晶装置の製造方法、及び電子機器
US7452488B2 (en) * 2006-10-31 2008-11-18 H.C. Starck Inc. Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
WO2009044892A1 (ja) * 2007-10-03 2009-04-09 Mitsui Mining & Smelting Co., Ltd. 酸化インジウム系透明導電膜及びその製造方法
CN101960625B (zh) * 2008-03-06 2013-01-23 住友金属矿山株式会社 半导体发光元件、该半导体发光元件的制造方法以及使用该半导体发光元件的灯
DE102008030825A1 (de) * 2008-06-30 2009-12-31 Schott Ag Vorrichtung zur Reflektion von Wärmestrahlung, ein Verfahren zu ihrer Herstellung sowie deren Verwendung
WO2010018707A1 (ja) * 2008-08-11 2010-02-18 出光興産株式会社 酸化ガリウム－酸化スズ系酸化物焼結体及び酸化物膜
JP5388625B2 (ja) * 2009-02-25 2014-01-15 日東電工株式会社 透明導電積層体の製造方法、透明導電積層体およびタッチパネル
CN102051175B (zh) * 2009-10-30 2013-05-08 海洋王照明科技股份有限公司 镧系镓酸盐发光材料及制备方法
JP2011174134A (ja) 2010-02-24 2011-09-08 Idemitsu Kosan Co Ltd Ｉｎ−Ｇａ−Ｓｎ系酸化物焼結体、ターゲット、酸化物半導体膜、及び半導体素子
JP5063742B2 (ja) * 2010-06-04 2012-10-31 出光興産株式会社 半透過半反射型電極基板の製造方法
JP5301021B2 (ja) 2011-09-06 2013-09-25 出光興産株式会社 スパッタリングターゲット
JP5796812B2 (ja) * 2013-11-29 2015-10-21 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法
WO2015098060A1 (ja) * 2013-12-27 2015-07-02 出光興産株式会社 酸化物焼結体、その製造方法及びスパッタリングターゲット
CN111164233B (zh) * 2018-08-09 2022-04-05 捷客斯金属株式会社 氧化物溅射靶及其制造方法、以及使用该氧化物溅射靶形成的氧化物薄膜
CN116813310B (zh) * 2023-06-01 2024-06-07 先导薄膜材料（广东）有限公司 一种稀土元素掺杂氧化铟锡镓靶材及其制备方法
CN119314720A (zh) * 2024-10-15 2025-01-14 天合光能股份有限公司 透明导电氧化物薄膜和钙钛矿太阳能电池及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766121B (zh) * 2017-11-15 2022-06-01 日商三井金屬鑛業股份有限公司 氧化物燒結體及濺鍍靶

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