JP3804974B2 - スパッタリングターゲット組立体のオートクレーブボンディング - Google Patents

スパッタリングターゲット組立体のオートクレーブボンディング Download PDF

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Publication number
JP3804974B2
JP3804974B2 JP52282796A JP52282796A JP3804974B2 JP 3804974 B2 JP3804974 B2 JP 3804974B2 JP 52282796 A JP52282796 A JP 52282796A JP 52282796 A JP52282796 A JP 52282796A JP 3804974 B2 JP3804974 B2 JP 3804974B2
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Japan
Prior art keywords
temperature
bonding
pressure
unbonded sandwich
unbonded
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Expired - Lifetime
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JP52282796A
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Japanese (ja)
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JPH10502707A (ja
Inventor
リチャード アーネスト デマーレイ
マニュエル ヘレーラ
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アプライド コマツ テクノロジー株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP52282796A 1995-01-25 1995-01-25 スパッタリングターゲット組立体のオートクレーブボンディング Expired - Lifetime JP3804974B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1995/001089 WO1996023085A1 (en) 1995-01-25 1995-01-25 Autoclave bonding of sputtering target assembly

Publications (2)

Publication Number Publication Date
JPH10502707A JPH10502707A (ja) 1998-03-10
JP3804974B2 true JP3804974B2 (ja) 2006-08-02

Family

ID=22248573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52282796A Expired - Lifetime JP3804974B2 (ja) 1995-01-25 1995-01-25 スパッタリングターゲット組立体のオートクレーブボンディング

Country Status (5)

Country Link
EP (1) EP0752017A1 (enrdf_load_stackoverflow)
JP (1) JP3804974B2 (enrdf_load_stackoverflow)
AU (1) AU1834795A (enrdf_load_stackoverflow)
TW (1) TW317518B (enrdf_load_stackoverflow)
WO (1) WO1996023085A1 (enrdf_load_stackoverflow)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983862B2 (ja) * 1997-10-24 2007-09-26 Ｄｏｗａホールディングス株式会社 スパッタリングターゲットとその接合方法及び接合装置
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US9793523B2 (en) 2002-08-09 2017-10-17 Sapurast Research Llc Electrochemical apparatus with barrier layer protected substrate
WO2004021532A1 (en) 2002-08-27 2004-03-11 Symmorphix, Inc. Optically coupling into highly uniform waveguides
EP1597408B1 (en) 2003-02-27 2012-12-05 Symmorphix, Inc. Method for forming dielectric barrier layers
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
WO2006063308A2 (en) 2004-12-08 2006-06-15 Symmorphix, Inc. DEPOSITION OF LICoO2
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US8342383B2 (en) 2006-07-06 2013-01-01 Praxair Technology, Inc. Method for forming sputter target assemblies having a controlled solder thickness
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
JP5551612B2 (ja) 2007-12-21 2014-07-16 インフィニット パワー ソリューションズ， インコーポレイテッド 電解質膜のための標的をスパッタリングする方法
US8518581B2 (en) 2008-01-11 2013-08-27 Inifinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US20100012488A1 (en) * 2008-07-15 2010-01-21 Koenigsmann Holger J Sputter target assembly having a low-temperature high-strength bond
EP2319101B1 (en) 2008-08-11 2015-11-04 Sapurast Research LLC Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
EP2474056B1 (en) 2009-09-01 2016-05-04 Sapurast Research LLC Printed circuit board with integrated thin film battery
EP2577777B1 (en) 2010-06-07 2016-12-28 Sapurast Research LLC Rechargeable, high-density electrochemical device
KR101240204B1 (ko) * 2011-12-19 2013-03-07 주식회사 나노신소재 원통형 스퍼터링 타겟의 제조방법
CN107914075A (zh) * 2017-11-14 2018-04-17 宁波江丰电子材料股份有限公司 靶材焊接方法
JP7311290B2 (ja) * 2019-03-27 2023-07-19 Ｊｘ金属株式会社 分割スパッタリングターゲット及びその製造方法
JP7250723B2 (ja) 2020-03-31 2023-04-03 Ｊｘ金属株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
CN113070685B (zh) * 2021-03-26 2022-05-03 安徽江淮汽车集团股份有限公司 包边与点焊一体化模具
CN113458523A (zh) * 2021-07-05 2021-10-01 宁波江丰电子材料股份有限公司 一种钽靶材组件的焊接方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63270459A (ja) * 1987-04-24 1988-11-08 Matsushita Electric Ind Co Ltd スパツタ用タ−ゲツトのボンデイング方法
JP2731152B2 (ja) * 1987-11-17 1998-03-25 日立金属株式会社 冷却部材付きスパッタリング用ターゲット
JPH03140464A (ja) * 1989-10-26 1991-06-14 Kobe Steel Ltd ターゲットのバッキング装置
GB9108553D0 (en) * 1991-04-22 1991-06-05 Ion Coat Ltd Ionised vapour source

Also Published As

Publication number Publication date
EP0752017A1 (en) 1997-01-08
AU1834795A (en) 1996-08-14
JPH10502707A (ja) 1998-03-10
WO1996023085A1 (en) 1996-08-01
TW317518B (enrdf_load_stackoverflow) 1997-10-11

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