JP3776183B2 - 絶縁ゲイト型電界効果トランジスタの作製方法 - Google Patents

絶縁ゲイト型電界効果トランジスタの作製方法 Download PDF

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JP3776183B2
JP3776183B2 JP30744296A JP30744296A JP3776183B2 JP 3776183 B2 JP3776183 B2 JP 3776183B2 JP 30744296 A JP30744296 A JP 30744296A JP 30744296 A JP30744296 A JP 30744296A JP 3776183 B2 JP3776183 B2 JP 3776183B2
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region
film
semiconductor layer
gate
protective film
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Expired - Fee Related
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JP30744296A
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Japanese (ja)
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JPH10135474A5 (enExample
JPH10135474A (ja
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宏勇 張
憲司 大塚
志郎 磯田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPH10135474A5 publication Critical patent/JPH10135474A5/ja
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP30744296A 1996-10-31 1996-10-31 絶縁ゲイト型電界効果トランジスタの作製方法 Expired - Fee Related JP3776183B2 (ja)

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JP30744296A JP3776183B2 (ja) 1996-10-31 1996-10-31 絶縁ゲイト型電界効果トランジスタの作製方法

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JP30744296A JP3776183B2 (ja) 1996-10-31 1996-10-31 絶縁ゲイト型電界効果トランジスタの作製方法

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JPH10135474A JPH10135474A (ja) 1998-05-22
JPH10135474A5 JPH10135474A5 (enExample) 2004-10-21
JP3776183B2 true JP3776183B2 (ja) 2006-05-17

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4982918B2 (ja) * 2000-10-13 2012-07-25 日本電気株式会社 液晶表示用基板及びその製造方法
JP3522216B2 (ja) 2000-12-19 2004-04-26 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに液晶表示装置
JP4535921B2 (ja) * 2005-03-31 2010-09-01 東芝モバイルディスプレイ株式会社 薄膜トランジスタおよびその製造方法
US7696024B2 (en) 2006-03-31 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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JPH10135474A (ja) 1998-05-22

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