JP3776183B2 - 絶縁ゲイト型電界効果トランジスタの作製方法 - Google Patents
絶縁ゲイト型電界効果トランジスタの作製方法 Download PDFInfo
- Publication number
- JP3776183B2 JP3776183B2 JP30744296A JP30744296A JP3776183B2 JP 3776183 B2 JP3776183 B2 JP 3776183B2 JP 30744296 A JP30744296 A JP 30744296A JP 30744296 A JP30744296 A JP 30744296A JP 3776183 B2 JP3776183 B2 JP 3776183B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- semiconductor layer
- gate
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 230000005669 field effect Effects 0.000 title claims description 13
- 239000012535 impurity Substances 0.000 claims description 85
- 239000010407 anodic oxide Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 137
- 239000010410 layer Substances 0.000 description 48
- 229910052698 phosphorus Inorganic materials 0.000 description 27
- 239000011574 phosphorus Substances 0.000 description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 25
- 230000008569 process Effects 0.000 description 25
- 239000010409 thin film Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30744296A JP3776183B2 (ja) | 1996-10-31 | 1996-10-31 | 絶縁ゲイト型電界効果トランジスタの作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30744296A JP3776183B2 (ja) | 1996-10-31 | 1996-10-31 | 絶縁ゲイト型電界効果トランジスタの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10135474A JPH10135474A (ja) | 1998-05-22 |
| JPH10135474A5 JPH10135474A5 (enExample) | 2004-10-21 |
| JP3776183B2 true JP3776183B2 (ja) | 2006-05-17 |
Family
ID=17969127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30744296A Expired - Fee Related JP3776183B2 (ja) | 1996-10-31 | 1996-10-31 | 絶縁ゲイト型電界効果トランジスタの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3776183B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4982918B2 (ja) * | 2000-10-13 | 2012-07-25 | 日本電気株式会社 | 液晶表示用基板及びその製造方法 |
| JP3522216B2 (ja) * | 2000-12-19 | 2004-04-26 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに液晶表示装置 |
| JP4535921B2 (ja) * | 2005-03-31 | 2010-09-01 | 東芝モバイルディスプレイ株式会社 | 薄膜トランジスタおよびその製造方法 |
| US7696024B2 (en) | 2006-03-31 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
-
1996
- 1996-10-31 JP JP30744296A patent/JP3776183B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10135474A (ja) | 1998-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3274081B2 (ja) | 薄膜トランジスタの製造方法および液晶表示装置の製造方法 | |
| JPH07321338A (ja) | 半導体集積回路およびその作製方法 | |
| JPH10144928A (ja) | 半導体装置及びその作製方法 | |
| KR100928490B1 (ko) | 액정표시패널 및 그 제조 방법 | |
| KR101051594B1 (ko) | 표시 장치 및 표시 장치의 제조 방법 | |
| KR0173692B1 (ko) | 박막트랜지스터의 제조방법 | |
| US20150380565A1 (en) | Thin film transistor and method for manufacturing the same, array substrate and display device | |
| KR100653298B1 (ko) | 박막 트랜지스터의 제조 방법 | |
| KR100492727B1 (ko) | 포토레지스트의 잔사불량이 방지된 반도체 도핑방법 및이를 이용한 액정표시소자 제조방법 | |
| US6716768B2 (en) | Method of manufacturing thin-film transistor, and liquid-crystal display | |
| JP3776183B2 (ja) | 絶縁ゲイト型電界効果トランジスタの作製方法 | |
| JP2000077665A (ja) | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 | |
| US6534350B2 (en) | Method for fabricating a low temperature polysilicon thin film transistor incorporating channel passivation step | |
| JPH09139503A (ja) | 逆スタガ型薄膜トランジスタおよびその製造方法と、それを用いた液晶表示装置 | |
| JP2007311453A (ja) | 薄膜トランジスタ及びその製造方法 | |
| JP3622492B2 (ja) | 薄膜半導体装置の製造方法 | |
| JPH10135474A5 (enExample) | ||
| KR100425159B1 (ko) | 폴리실리콘 박막트랜지스터의 제조방법 및 이를 적용한액정표시소자 | |
| CN109860107B (zh) | 阵列基板及其制作方法 | |
| JP3358284B2 (ja) | 薄膜トランジスタの製造方法 | |
| JP4197270B2 (ja) | 半導体集積回路の作製方法 | |
| JPH07115205A (ja) | 多結晶ＳｉＴＦＴの製造方法 | |
| JPH07321337A (ja) | 半導体集積回路およびその作製方法 | |
| JP4249512B2 (ja) | 絶縁ゲイト型半導体装置 | |
| KR20060099870A (ko) | 캡핑막을 구비하는 박막 트랜지스터 및 그 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040401 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051108 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051226 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060221 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060222 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100303 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100303 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100303 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100303 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110303 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110303 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120303 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120303 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120303 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130303 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130303 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140303 Year of fee payment: 8 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |