JP3773510B2 - 放電プラズマ処理方法および放電プラズマ処理装置 - Google Patents
放電プラズマ処理方法および放電プラズマ処理装置 Download PDFInfo
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- JP3773510B2 JP3773510B2 JP2003315932A JP2003315932A JP3773510B2 JP 3773510 B2 JP3773510 B2 JP 3773510B2 JP 2003315932 A JP2003315932 A JP 2003315932A JP 2003315932 A JP2003315932 A JP 2003315932A JP 3773510 B2 JP3773510 B2 JP 3773510B2
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- 238000012545 processing Methods 0.000 title claims description 100
- 238000003672 processing method Methods 0.000 title claims description 23
- 208000028659 discharge Diseases 0.000 claims description 218
- 238000000034 method Methods 0.000 claims description 44
- 238000002360 preparation method Methods 0.000 claims description 34
- 238000009832 plasma treatment Methods 0.000 claims description 32
- 239000007787 solid Substances 0.000 claims description 25
- 238000009434 installation Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 30
- 239000011347 resin Substances 0.000 description 20
- 229920005989 resin Polymers 0.000 description 20
- 230000015556 catabolic process Effects 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000010891 electric arc Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003315932A JP3773510B2 (ja) | 2003-09-08 | 2003-09-08 | 放電プラズマ処理方法および放電プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003315932A JP3773510B2 (ja) | 2003-09-08 | 2003-09-08 | 放電プラズマ処理方法および放電プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005085586A JP2005085586A (ja) | 2005-03-31 |
| JP2005085586A5 JP2005085586A5 (enExample) | 2005-07-14 |
| JP3773510B2 true JP3773510B2 (ja) | 2006-05-10 |
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ID=34416030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003315932A Expired - Fee Related JP3773510B2 (ja) | 2003-09-08 | 2003-09-08 | 放電プラズマ処理方法および放電プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3773510B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5336691B2 (ja) * | 2005-09-16 | 2013-11-06 | 国立大学法人東北大学 | プラズマ発生装置、表面処理装置、光源、プラズマ発生方法、表面処理方法および光照射方法 |
| US7914692B2 (en) * | 2006-08-29 | 2011-03-29 | Ngk Insulators, Ltd. | Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding |
| JP6376685B2 (ja) * | 2014-05-16 | 2018-08-22 | 東レエンジニアリング株式会社 | 薄膜形成装置および薄膜形成方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5864030A (ja) * | 1981-10-13 | 1983-04-16 | Nec Kyushu Ltd | プラズマエツチング装置 |
| JPS63102318A (ja) * | 1986-10-20 | 1988-05-07 | Tokyo Electron Ltd | プラズマエツチング方法 |
| JPH04199816A (ja) * | 1990-11-29 | 1992-07-21 | Mitsubishi Electric Corp | プラズマcvd装置 |
| JP4378592B2 (ja) * | 2000-11-13 | 2009-12-09 | 株式会社安川電機 | 放電発生装置の制御方法 |
| JP2002217168A (ja) * | 2001-01-15 | 2002-08-02 | Nec Corp | プラズマ処理方法 |
-
2003
- 2003-09-08 JP JP2003315932A patent/JP3773510B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2005085586A (ja) | 2005-03-31 |
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