JP3766802B2 - 遠紫外軟ｘ線投影リソグラフィー法システムおよびリソグラフィーエレメント - Google Patents

遠紫外軟ｘ線投影リソグラフィー法システムおよびリソグラフィーエレメント Download PDF

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Publication number
JP3766802B2
JP3766802B2 JP2001512586A JP2001512586A JP3766802B2 JP 3766802 B2 JP3766802 B2 JP 3766802B2 JP 2001512586 A JP2001512586 A JP 2001512586A JP 2001512586 A JP2001512586 A JP 2001512586A JP 3766802 B2 JP3766802 B2 JP 3766802B2
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Japan
Prior art keywords
glass
doped
lithography
sio
reflective
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Expired - Lifetime
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JP2001512586A
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Japanese (ja)
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JP2003505876A (ja
JP2003505876A5 (https=
Inventor
エル ジュニア デイヴィス，クロード
イー ハーディナ，ケネス
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Corning Inc
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Corning Inc
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1415—Reactant delivery systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0605—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors
    • G02B17/0615—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using two curved mirrors off-axis or unobscured systems in wich all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0626—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using three curved mirrors
    • G02B17/0636—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2001512586A 1999-07-22 2000-07-10 遠紫外軟ｘ線投影リソグラフィー法システムおよびリソグラフィーエレメント Expired - Lifetime JP3766802B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14505799P 1999-07-22 1999-07-22
US60/145,057 1999-07-22
US14984099P 1999-08-19 1999-08-19
US60/149,840 1999-08-19
US15881399P 1999-10-12 1999-10-12
US60/158,813 1999-10-12
PCT/US2000/018798 WO2001008163A1 (en) 1999-07-22 2000-07-10 Extreme ultraviolet soft x-ray projection lithographic method system and lithography elements

Publications (3)

Publication Number Publication Date
JP2003505876A JP2003505876A (ja) 2003-02-12
JP2003505876A5 JP2003505876A5 (https=) 2006-01-05
JP3766802B2 true JP3766802B2 (ja) 2006-04-19

Family

ID=27386208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001512586A Expired - Lifetime JP3766802B2 (ja) 1999-07-22 2000-07-10 遠紫外軟ｘ線投影リソグラフィー法システムおよびリソグラフィーエレメント

Country Status (6)

Country Link
US (2) US6931097B1 (https=)
EP (1) EP1214718A4 (https=)
JP (1) JP3766802B2 (https=)
KR (1) KR100648355B1 (https=)
AU (1) AU6208300A (https=)
WO (1) WO2001008163A1 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6931097B1 (en) 1999-07-22 2005-08-16 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements
FR2801113B1 (fr) * 1999-11-15 2003-05-09 Commissariat Energie Atomique Procede d'obtention et source de rayonnement extreme ultra violet, application en lithographie
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US8047023B2 (en) * 2001-04-27 2011-11-01 Corning Incorporated Method for producing titania-doped fused silica glass
US6606883B2 (en) 2001-04-27 2003-08-19 Corning Incorporated Method for producing fused silica and doped fused silica glass
DE10139188A1 (de) * 2001-08-16 2003-03-06 Schott Glas Glaskeramik für röntgenoptische Komponenten
US6988377B2 (en) 2001-11-27 2006-01-24 Corning Incorporated Method for making extreme ultraviolet lithography structures
US6997015B2 (en) 2001-11-27 2006-02-14 Corning Incorporated EUV lithography glass structures formed by extrusion consolidation process
US6829908B2 (en) 2002-02-27 2004-12-14 Corning Incorporated Fabrication of inclusion free homogeneous glasses
US6832493B2 (en) 2002-02-27 2004-12-21 Corning Incorporated High purity glass bodies formed by zero shrinkage casting
US7053017B2 (en) 2002-03-05 2006-05-30 Corning Incorporated Reduced striae extreme ultraviolet elements
US7129010B2 (en) 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
DE10317662A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung
AU2003229725A1 (en) 2003-04-24 2004-11-19 Carl Zeiss Smt Ag Projection optical system
DE10319596A1 (de) * 2003-05-02 2004-11-25 Degussa Ag Mehrkomponentenglas
WO2005040925A1 (de) 2003-09-27 2005-05-06 Carl Zeiss Smt Ag Euv-projektionsobjektiv mit spiegeln aus materialien mit unterschiedlichem vorzeichen der steigung der temperaturabhängigkeit des wärmeausdehnungskoeffizienten nahe der nulldurchgangstemperatur
JP4492123B2 (ja) * 2004-01-05 2010-06-30 旭硝子株式会社 シリカガラス
DE102004024808B4 (de) 2004-05-17 2006-11-09 Heraeus Quarzglas Gmbh & Co. Kg Quarzglasrohling für ein optisches Bauteil zur Übertragung extrem kurzwelliger ultravioletter Strahlung
US7450217B2 (en) * 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP4506689B2 (ja) * 2005-06-14 2010-07-21 旭硝子株式会社 予備研磨されたガラス基板表面を仕上げ加工する方法
DE112006003221T5 (de) * 2005-12-22 2008-10-23 Asahi Glass Co., Ltd. Glassubstrat für eine Maskenvorform und Polierverfahren zur Herstellung desselben
JP2008100891A (ja) 2006-10-20 2008-05-01 Covalent Materials Corp チタニア−シリカガラス
JP5332249B2 (ja) * 2007-06-05 2013-11-06 旭硝子株式会社 ガラス基板の研磨方法
JP5042714B2 (ja) 2007-06-06 2012-10-03 信越化学工業株式会社 ナノインプリントモールド用チタニアドープ石英ガラス
JP2009013048A (ja) * 2007-06-06 2009-01-22 Shin Etsu Chem Co Ltd ナノインプリントモールド用チタニアドープ石英ガラス
JP5314901B2 (ja) * 2008-02-13 2013-10-16 国立大学法人東北大学 シリカ・チタニアガラス及びその製造方法、線膨張係数測定方法
JP5365247B2 (ja) * 2008-02-25 2013-12-11 旭硝子株式会社 ＴｉＯ２を含有するシリカガラスおよびそれを用いたリソグラフィ用光学部材
DE102008002403A1 (de) * 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
JP2010135732A (ja) 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
US8713969B2 (en) * 2009-08-31 2014-05-06 Corning Incorporated Tuning Tzc by the annealing of ultra low expansion glass
DE102009055119B4 (de) * 2009-12-22 2017-07-13 Carl Zeiss Smt Gmbh Spiegelelement für die EUV-Lithographie und Herstellungsverfahren dafür
US8987155B2 (en) 2012-08-30 2015-03-24 Corning Incorporated Niobium doped silica titania glass and method of preparation
TWI625592B (zh) * 2012-12-28 2018-06-01 Ｈｏｙａ股份有限公司 Substrate for substrate material, substrate with multilayer reflective film, reflective mask material, reflective mask, method for manufacturing substrate for mask material, method for manufacturing substrate with multilayer reflective film, and method for manufacturing semiconductor device
JP5992842B2 (ja) 2013-01-24 2016-09-14 信越石英株式会社 シリカチタニアガラスの製造方法及びシリカチタニアガラスの選別方法
DE102013219808A1 (de) * 2013-09-30 2015-04-02 Heraeus Quarzglas Gmbh & Co. Kg Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung
US9382151B2 (en) 2014-01-31 2016-07-05 Corning Incorporated Low expansion silica-titania articles with a Tzc gradient by compositional variation
US20150239767A1 (en) 2014-02-26 2015-08-27 Corning Incorporated HEAT TREATING SILICA-TITANIA GLASS TO INDUCE A Tzc GRADIENT
JP2017536323A (ja) 2014-11-26 2017-12-07 コーニング インコーポレイテッド 低膨張率を有するドープされたシリカ−チタニアガラスおよびその製造方法
JP2018513093A (ja) 2015-03-26 2018-05-24 コーニング インコーポレイテッド 極紫外線リソグラフィーに使用するためのガラス複合体
JP6069609B2 (ja) * 2015-03-26 2017-02-01 株式会社リガク 二重湾曲ｘ線集光素子およびその構成体、二重湾曲ｘ線分光素子およびその構成体の製造方法
JP6597523B2 (ja) * 2016-08-29 2019-10-30 Ａｇｃ株式会社 多層膜付基板およびその製造方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2272342A (en) 1934-08-27 1942-02-10 Corning Glass Works Method of making a transparent article of silica
BE438752A (https=) 1939-04-22
US3484328A (en) 1965-03-05 1969-12-16 Owens Illinois Inc Telescope mirror blank
US3790654A (en) 1971-11-09 1974-02-05 Corning Glass Works Extrusion method for forming thinwalled honeycomb structures
US4002512A (en) 1974-09-16 1977-01-11 Western Electric Company, Inc. Method of forming silicon dioxide
US4184078A (en) 1978-08-15 1980-01-15 The United States Of America As Represented By The Secretary Of The Navy Pulsed X-ray lithography
US4501602A (en) 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
US4732838A (en) * 1985-12-31 1988-03-22 General Electric Company Method of forming a patterned glass layer over the surface of a substrate
US4902216A (en) 1987-09-08 1990-02-20 Corning Incorporated Extrusion die for protrusion and/or high cell density ceramic honeycomb structures
FR2626082B1 (fr) 1988-01-14 1991-10-18 Commissariat Energie Atomique Dispositif d'optique integree permettant de separer les composantes polarisees d'un champ electromagnetique guide et procede de realisation du dispositif
EP0349925A1 (de) * 1988-07-04 1990-01-10 INTERATOM Gesellschaft mit beschränkter Haftung Verfahren zum Beschichten von Gegenständen aus hochschmelzenden Metallen
US5146518A (en) 1990-03-30 1992-09-08 The Furukawa Electric Co., Ltd. Optical directional coupler device and a method of driving same
US5043002A (en) 1990-08-16 1991-08-27 Corning Incorporated Method of making fused silica by decomposing siloxanes
US5152819A (en) * 1990-08-16 1992-10-06 Corning Incorporated Method of making fused silica
US5315629A (en) 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
US5076700A (en) 1990-12-20 1991-12-31 Litton Systems, Inc. Bonded lightweight mirror structure
US5154744A (en) 1991-08-26 1992-10-13 Corning Incorporated Method of making titania-doped fused silica
US5485497A (en) * 1991-11-12 1996-01-16 Hitachi, Ltd. Optical element and projection exposure apparatus employing the same
US5353322A (en) 1992-05-05 1994-10-04 Tropel Corporation Lens system for X-ray projection lithography camera
US5220590A (en) 1992-05-05 1993-06-15 General Signal Corporation X-ray projection lithography camera
JP2995371B2 (ja) * 1992-11-12 1999-12-27 セイコーインスツルメンツ株式会社 Ｘ線反射鏡用材料
US5395738A (en) 1992-12-29 1995-03-07 Brandes; George R. Electron lithography using a photocathode
US5356662A (en) * 1993-01-05 1994-10-18 At&T Bell Laboratories Method for repairing an optical element which includes a multilayer coating
US5265143A (en) * 1993-01-05 1993-11-23 At&T Bell Laboratories X-ray optical element including a multilayer coating
US5332702A (en) 1993-04-16 1994-07-26 Corning Incorporated Low sodium zircon refractory and fused silica process
JPH075296A (ja) * 1993-06-14 1995-01-10 Canon Inc 軟ｘ線用多層膜
JP3513236B2 (ja) 1993-11-19 2004-03-31 キヤノン株式会社 Ｘ線マスク構造体、ｘ線マスク構造体の製造方法、該ｘ線マスク構造体を用いたｘ線露光装置及びｘ線露光方法、並びに該ｘ線露光方法を用いて製造される半導体装置
JP2569426B2 (ja) 1994-03-24 1997-01-08 工業技術院長 超格子多層膜の製造方法
US5485499A (en) 1994-08-05 1996-01-16 Moxtek, Inc. High throughput reflectivity and resolution x-ray dispersive and reflective structures for the 100 eV to 5000 eV energy range and method of making the devices
US5605490A (en) 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5868605A (en) 1995-06-02 1999-02-09 Speedfam Corporation In-situ polishing pad flatness control
US6007963A (en) 1995-09-21 1999-12-28 Sandia Corporation Method for extreme ultraviolet lithography
US5686728A (en) * 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
US6093484A (en) 1997-04-04 2000-07-25 Hoya Corporation Method for the production of glass product
JPH11221742A (ja) 1997-09-30 1999-08-17 Hoya Corp 研磨方法及び研磨装置並びに磁気記録媒体用ガラス基板及び磁気記録媒体
US6199991B1 (en) 1997-11-13 2001-03-13 U.S. Philips Corporation Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
DE19756486C1 (de) 1997-12-18 1999-04-22 Schott Glas Trägertisch für eine Photomaske in einer Vorrichtung zur Mikrochip-Herstellung
DE19830449A1 (de) 1998-07-08 2000-01-27 Zeiss Carl Fa SiO¶2¶-beschichtetes Spiegelsubstrat für EUV
US6312373B1 (en) 1998-09-22 2001-11-06 Nikon Corporation Method of manufacturing an optical system
US5970751A (en) 1998-09-22 1999-10-26 Corning Incorporated Fused SiO2 -TiO2 glass method
JP3631017B2 (ja) * 1998-11-14 2005-03-23 Ｈｏｙａ株式会社 Ｘ線マスクブランク及びその製造方法、並びにｘ線マスク及びその製造方法
US6468374B1 (en) 1999-02-18 2002-10-22 Corning Incorporated Method of making silica glass honeycomb structure from silica soot extrusion
US6188150B1 (en) 1999-06-16 2001-02-13 Euv, Llc Light weight high-stiffness stage platen
US6931097B1 (en) * 1999-07-22 2005-08-16 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements
AU5932500A (en) * 1999-07-22 2001-02-13 Corning Incorporated Extreme ultraviolet soft x-ray projection lithographic method and mask devices
EP1106582A3 (en) 1999-12-10 2001-10-24 Corning Incorporated Silica soot and process for producing it
US6176588B1 (en) 1999-12-14 2001-01-23 Corning Incorporated Low cost light weight mirror blank
US6368942B1 (en) 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
KR20040004389A (ko) * 2000-10-03 2004-01-13 코닝 인코포레이티드 포토리소그라피 방법 및 시스템

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US6931097B1 (en) 2005-08-16
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