JP3754616B2 - 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ - Google Patents

半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ Download PDF

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Publication number
JP3754616B2
JP3754616B2 JP2000591661A JP2000591661A JP3754616B2 JP 3754616 B2 JP3754616 B2 JP 3754616B2 JP 2000591661 A JP2000591661 A JP 2000591661A JP 2000591661 A JP2000591661 A JP 2000591661A JP 3754616 B2 JP3754616 B2 JP 3754616B2
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Japan
Prior art keywords
test
die
circuit
product
assembly
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Expired - Fee Related
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JP2000591661A
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English (en)
Japanese (ja)
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JP2002533738A (ja
Inventor
エルドリッジ，ベンジャミン，エヌ
ハンドロス，イゴー，ワイ
ペダーセン，デイビッド，ブイ
ウィッテン，ラルフ，ジー
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フォームファクター，インコーポレイテッド
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Priority claimed from US09/224,673 external-priority patent/US6551844B1/en
Priority claimed from US09/224,166 external-priority patent/US6429029B1/en
Application filed by フォームファクター，インコーポレイテッド filed Critical フォームファクター，インコーポレイテッド
Publication of JP2002533738A publication Critical patent/JP2002533738A/ja
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Publication of JP3754616B2 publication Critical patent/JP3754616B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Measuring Leads Or Probes (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2000591661A 1998-12-31 1999-12-22 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ Expired - Fee Related JP3754616B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09/224,673 1998-12-31
US09/224,673 US6551844B1 (en) 1997-01-15 1998-12-31 Test assembly including a test die for testing a semiconductor product die
US09/224,166 US6429029B1 (en) 1997-01-15 1998-12-31 Concurrent design and subsequent partitioning of product and test die
US09/224,166 1998-12-31
PCT/US1999/030916 WO2000039848A2 (en) 1998-12-31 1999-12-22 Test method and assembly including a test die for testing a semiconductor product die

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004178019A Division JP2005049336A (ja) 1998-12-31 2004-06-16 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ

Publications (2)

Publication Number Publication Date
JP2002533738A JP2002533738A (ja) 2002-10-08
JP3754616B2 true JP3754616B2 (ja) 2006-03-15

Family

ID=26918470

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2000591661A Expired - Fee Related JP3754616B2 (ja) 1998-12-31 1999-12-22 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ
JP2004178019A Pending JP2005049336A (ja) 1998-12-31 2004-06-16 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ
JP2007013166A Pending JP2007201471A (ja) 1998-12-31 2007-01-23 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ
JP2010106806A Pending JP2010249824A (ja) 1998-12-31 2010-05-06 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2004178019A Pending JP2005049336A (ja) 1998-12-31 2004-06-16 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ
JP2007013166A Pending JP2007201471A (ja) 1998-12-31 2007-01-23 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ
JP2010106806A Pending JP2010249824A (ja) 1998-12-31 2010-05-06 半導体製品ダイのテスト方法及び同テストのためのテストダイを含むアセンブリ

Country Status (5)

Country Link
EP (1) EP1141735A2 (ko)
JP (4) JP3754616B2 (ko)
KR (4) KR100554324B1 (ko)
TW (1) TW580744B (ko)
WO (1) WO2000039848A2 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338953A (ja) * 2000-05-29 2001-12-07 Mitsubishi Electric Corp 半導体試験装置、半導体試験方法および半導体装置
US6603323B1 (en) 2000-07-10 2003-08-05 Formfactor, Inc. Closed-grid bus architecture for wafer interconnect structure
JP2004317162A (ja) * 2003-04-11 2004-11-11 Masaki Esashi プローブカード、プローブピン及びその製造方法
US7202687B2 (en) * 2004-04-08 2007-04-10 Formfactor, Inc. Systems and methods for wireless semiconductor device testing
JP4679274B2 (ja) * 2005-07-07 2011-04-27 日本電子材料株式会社 プローブの製造方法
JP2007157944A (ja) 2005-12-02 2007-06-21 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7615861B2 (en) 2006-03-13 2009-11-10 Sandisk Corporation Methods of promoting adhesion between transfer molded IC packages and injection molded plastics for creating over-molded memory cards
US7986146B2 (en) * 2006-11-29 2011-07-26 Globalfoundries Inc. Method and system for detecting existence of an undesirable particle during semiconductor fabrication
EP2135096B1 (en) * 2007-04-03 2014-09-10 Scanimetrics Inc. Testing of electronic circuits using an active probe integrated circuit
US8717053B2 (en) * 2011-11-04 2014-05-06 Keithley Instruments, Inc. DC-AC probe card topology
KR101378506B1 (ko) * 2012-02-17 2014-03-27 주식회사 오킨스전자 디스플레이 패널 검사장치
TWI493194B (zh) * 2013-07-15 2015-07-21 Mpi Corp Probe module with feedback test function
CN104297536B (zh) * 2013-07-15 2017-11-28 旺矽科技股份有限公司 具回馈测试功能的探针模块
TWI489113B (zh) * 2013-07-15 2015-06-21 Mpi Corp A probe card that switches the signal path
TWI510798B (zh) * 2015-02-24 2015-12-01 Powertech Technology Inc 通用型測試平台及其測試方法
KR101913274B1 (ko) 2016-11-18 2018-10-30 주식회사 에스디에이 프로브 카드의 전기적 특성 측정장치
KR102148840B1 (ko) * 2018-11-27 2020-08-28 주식회사 에스디에이 프로브 카드
JP7561563B2 (ja) 2020-10-05 2024-10-04 三菱電機エンジニアリング株式会社 半導体装置
CN115308563A (zh) * 2021-07-02 2022-11-08 台湾积体电路制造股份有限公司 测试集成电路的方法和测试系统

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3063168D1 (en) * 1979-10-18 1983-06-16 Sperry Corp Fault detection in integrated circuit chips and in circuit cards and systems including such chips
EP0304868A3 (en) * 1987-08-28 1990-10-10 Tektronix Inc. Multiple lead probe for integrated circuits in wafer form
US5103557A (en) * 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
JPH01302850A (ja) * 1988-05-31 1989-12-06 Toshiba Corp テスト容易化半導体集積回路の製造方法
US5053700A (en) * 1989-02-14 1991-10-01 Amber Engineering, Inc. Method for wafer scale testing of redundant integrated circuit dies
JPH0582605A (ja) * 1991-09-24 1993-04-02 Mitsubishi Electric Corp 半導体集積回路素子およびウエハテスト検査方法
US5576554A (en) * 1991-11-05 1996-11-19 Monolithic System Technology, Inc. Wafer-scale integrated circuit interconnect structure architecture
JPH05267405A (ja) * 1992-03-19 1993-10-15 Data Puroobu:Kk プローブカード
KR970010656B1 (ko) * 1992-09-01 1997-06-30 마쯔시다 덴기 산교 가부시끼가이샤 반도체 테스트 장치, 반도체 테스트 회로칩 및 프로브 카드
US5461573A (en) * 1993-09-20 1995-10-24 Nec Usa, Inc. VLSI circuits designed for testability and methods for producing them
GB9404078D0 (en) * 1994-03-03 1994-04-20 Int Computers Ltd Design automation method for digital electronic circuits
JP3821171B2 (ja) * 1995-11-10 2006-09-13 オー・エイチ・ティー株式会社 検査装置及び検査方法
DE69735101T8 (de) * 1996-05-17 2007-02-01 Formfactor, Inc., Livermore Kontaktspitzenstruktur für mikroelektronische verbindungselemente und herstellungsverfahren dazu
JP2940483B2 (ja) * 1996-08-28 1999-08-25 日本電気株式会社 Ｍｃｍ検査治具
US5719449A (en) * 1996-09-30 1998-02-17 Lucent Technologies Inc. Flip-chip integrated circuit with improved testability
TW434477B (en) * 1997-01-22 2001-05-16 Matsushita Electric Ind Co Ltd Design method of easy checking and formation method of checking input series

Also Published As

Publication number Publication date
KR100580405B1 (ko) 2006-05-16
WO2000039848A3 (en) 2000-11-23
KR100554324B1 (ko) 2006-02-24
TW580744B (en) 2004-03-21
JP2010249824A (ja) 2010-11-04
JP2005049336A (ja) 2005-02-24
JP2007201471A (ja) 2007-08-09
KR20050063812A (ko) 2005-06-28
WO2000039848A2 (en) 2000-07-06
EP1141735A2 (en) 2001-10-10
KR100548103B1 (ko) 2006-02-02
KR20040094894A (ko) 2004-11-10
KR20030096418A (ko) 2003-12-24
KR20010100002A (ko) 2001-11-09
KR100522070B1 (ko) 2005-10-18
JP2002533738A (ja) 2002-10-08

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