JP3754189B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3754189B2
JP3754189B2 JP24606497A JP24606497A JP3754189B2 JP 3754189 B2 JP3754189 B2 JP 3754189B2 JP 24606497 A JP24606497 A JP 24606497A JP 24606497 A JP24606497 A JP 24606497A JP 3754189 B2 JP3754189 B2 JP 3754189B2
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Japan
Prior art keywords
silicon film
film
nickel
amorphous silicon
manufacturing
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Expired - Fee Related
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JP24606497A
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Japanese (ja)
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JPH1168113A (ja
JPH1168113A5 (enExample
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP24606497A priority Critical patent/JP3754189B2/ja
Publication of JPH1168113A publication Critical patent/JPH1168113A/ja
Publication of JPH1168113A5 publication Critical patent/JPH1168113A5/ja
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Publication of JP3754189B2 publication Critical patent/JP3754189B2/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP24606497A 1997-08-26 1997-08-26 半導体装置の作製方法 Expired - Fee Related JP3754189B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24606497A JP3754189B2 (ja) 1997-08-26 1997-08-26 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24606497A JP3754189B2 (ja) 1997-08-26 1997-08-26 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1168113A JPH1168113A (ja) 1999-03-09
JPH1168113A5 JPH1168113A5 (enExample) 2005-06-02
JP3754189B2 true JP3754189B2 (ja) 2006-03-08

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JP24606497A Expired - Fee Related JP3754189B2 (ja) 1997-08-26 1997-08-26 半導体装置の作製方法

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JP (1) JP3754189B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4141292B2 (ja) * 2002-03-15 2008-08-27 株式会社半導体エネルギー研究所 半導体装置
JP4141307B2 (ja) * 2002-03-15 2008-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

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Publication number Publication date
JPH1168113A (ja) 1999-03-09

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