JP3743291B2 - 電気光学装置及びプロジェクタ - Google Patents
電気光学装置及びプロジェクタ Download PDFInfo
- Publication number
- JP3743291B2 JP3743291B2 JP2001014353A JP2001014353A JP3743291B2 JP 3743291 B2 JP3743291 B2 JP 3743291B2 JP 2001014353 A JP2001014353 A JP 2001014353A JP 2001014353 A JP2001014353 A JP 2001014353A JP 3743291 B2 JP3743291 B2 JP 3743291B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- electro
- shielding film
- optical device
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 claims description 239
- 239000010410 layer Substances 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 101
- 239000004065 semiconductor Substances 0.000 claims description 64
- 239000011229 interlayer Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 230000031700 light absorption Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 9
- 230000002411 adverse Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000003870 refractory metal Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001014353A JP3743291B2 (ja) | 2001-01-23 | 2001-01-23 | 電気光学装置及びプロジェクタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001014353A JP3743291B2 (ja) | 2001-01-23 | 2001-01-23 | 電気光学装置及びプロジェクタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002215064A JP2002215064A (ja) | 2002-07-31 |
| JP2002215064A5 JP2002215064A5 (https=) | 2004-12-24 |
| JP3743291B2 true JP3743291B2 (ja) | 2006-02-08 |
Family
ID=18881063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001014353A Expired - Fee Related JP3743291B2 (ja) | 2001-01-23 | 2001-01-23 | 電気光学装置及びプロジェクタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3743291B2 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3858880B2 (ja) * | 2002-10-31 | 2006-12-20 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4506133B2 (ja) * | 2002-10-31 | 2010-07-21 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4862936B2 (ja) * | 2002-10-31 | 2012-01-25 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4045226B2 (ja) | 2002-10-31 | 2008-02-13 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP3870941B2 (ja) | 2002-10-31 | 2007-01-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP2005045017A (ja) * | 2003-07-22 | 2005-02-17 | Sharp Corp | アクティブマトリクス基板およびそれを備えた表示装置 |
| JP4529450B2 (ja) * | 2004-01-19 | 2010-08-25 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4655943B2 (ja) * | 2006-01-18 | 2011-03-23 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、並びに導電層の接続構造 |
| JP5034529B2 (ja) * | 2007-02-01 | 2012-09-26 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
| JP5292738B2 (ja) * | 2007-08-08 | 2013-09-18 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
| JP5157319B2 (ja) * | 2007-08-28 | 2013-03-06 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5104140B2 (ja) * | 2007-09-10 | 2012-12-19 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5245333B2 (ja) * | 2007-09-10 | 2013-07-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4530105B2 (ja) * | 2009-10-13 | 2010-08-25 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP5609583B2 (ja) * | 2010-11-19 | 2014-10-22 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、電子機器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3716580B2 (ja) * | 1997-02-27 | 2005-11-16 | セイコーエプソン株式会社 | 液晶装置及びその製造方法、並びに投写型表示装置 |
| JP3674356B2 (ja) * | 1998-01-30 | 2005-07-20 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、tftアレイ基板並びに電子機器 |
| JP3796973B2 (ja) * | 1998-07-28 | 2006-07-12 | セイコーエプソン株式会社 | 電気光学装置及び投射型表示装置 |
| JP3551778B2 (ja) * | 1998-09-07 | 2004-08-11 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置用基板、電気光学装置の製造方法並びに電子機器 |
| JP3687415B2 (ja) * | 1999-05-28 | 2005-08-24 | セイコーエプソン株式会社 | 電気光学装置の製造方法、電気光学装置及び投射型表示装置 |
-
2001
- 2001-01-23 JP JP2001014353A patent/JP3743291B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002215064A (ja) | 2002-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100626910B1 (ko) | 전기 광학 장치 및 전자기기 | |
| JP4088190B2 (ja) | 電気光学装置及び電子機器 | |
| KR100700794B1 (ko) | 전기 광학 장치 및 전자기기 | |
| JP4599655B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3743291B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3821067B2 (ja) | 電気光学装置及び電子機器 | |
| JP3608531B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP4023522B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP4438312B2 (ja) | 電気光学装置及び電子機器 | |
| JP3830361B2 (ja) | Tftアレイ基板、電気光学装置及び投射型表示装置 | |
| JP3849434B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3700679B2 (ja) | 電気光学装置及び電子機器 | |
| JP3873814B2 (ja) | 電気光学装置及び電子機器 | |
| JP4496600B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3965935B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3982183B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3736330B2 (ja) | 電気光学装置 | |
| JP5141536B2 (ja) | 電気光学装置及び電子機器 | |
| JP3731460B2 (ja) | 電気光学装置およびプロジェクタ | |
| JP4509463B2 (ja) | 電気光学装置及び電子機器 | |
| JP4023107B2 (ja) | 電気光学装置及びこれを具備する電子機器 | |
| JP5158131B2 (ja) | 電気光学装置およびプロジェクタ | |
| JP4066607B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3820921B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP4063260B2 (ja) | 電気光学装置及び投射型表示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040122 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040122 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050607 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050830 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051004 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20051025 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20051107 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091125 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091125 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101125 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101125 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111125 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111125 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121125 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121125 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131125 Year of fee payment: 8 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |