JP3738799B2 - アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置 - Google Patents

アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置 Download PDF

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Publication number
JP3738799B2
JP3738799B2 JP33787597A JP33787597A JP3738799B2 JP 3738799 B2 JP3738799 B2 JP 3738799B2 JP 33787597 A JP33787597 A JP 33787597A JP 33787597 A JP33787597 A JP 33787597A JP 3738799 B2 JP3738799 B2 JP 3738799B2
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layer
substrate
active matrix
pixel electrode
thin film
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JP33787597A
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Japanese (ja)
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JPH10206896A5 (enExample
JPH10206896A (ja
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聡 井上
達也 下田
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Seiko Epson Corp
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Seiko Epson Corp
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    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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JP33787597A 1996-11-22 1997-11-21 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置 Expired - Fee Related JP3738799B2 (ja)

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Application Number Priority Date Filing Date Title
JP33787597A JP3738799B2 (ja) 1996-11-22 1997-11-21 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置

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Application Number Priority Date Filing Date Title
JP8-327688 1996-11-22
JP32768896 1996-11-22
JP33787597A JP3738799B2 (ja) 1996-11-22 1997-11-21 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置

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JP2003424183A Division JP3738850B2 (ja) 1996-11-22 2003-12-22 アクティブマトリクス基板および液晶表示装置
JP2005255679A Division JP4229107B2 (ja) 1996-11-22 2005-09-02 アクティブマトリクス基板の製造方法，アクティブマトリクス基板および液晶表示装置

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JPH10206896A JPH10206896A (ja) 1998-08-07
JPH10206896A5 JPH10206896A5 (enExample) 2004-12-09
JP3738799B2 true JP3738799B2 (ja) 2006-01-25

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JP3682714B2 (ja) * 2000-06-16 2005-08-10 共同印刷株式会社 アクティブマトリックス層および転写方法
JP3862202B2 (ja) * 2000-06-16 2006-12-27 共同印刷株式会社 アクティブマトリックス層および転写方法
JP4019305B2 (ja) * 2001-07-13 2007-12-12 セイコーエプソン株式会社 薄膜装置の製造方法
EP1455394B1 (en) 2001-07-24 2018-04-11 Samsung Electronics Co., Ltd. Transfer method
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
JP2004072049A (ja) * 2002-08-09 2004-03-04 Ricoh Co Ltd 有機ｔｆｔ素子及びその製造方法
JP4637477B2 (ja) * 2002-12-27 2011-02-23 株式会社半導体エネルギー研究所 剥離方法
CN102290422A (zh) * 2003-01-15 2011-12-21 株式会社半导体能源研究所 显示装置及其制造方法、剥离方法及发光装置的制造方法
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP4310685B2 (ja) * 2003-09-03 2009-08-12 セイコーエプソン株式会社 転写装置
JP5153058B2 (ja) * 2005-02-25 2013-02-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4650066B2 (ja) * 2005-04-01 2011-03-16 セイコーエプソン株式会社 転写用基板、可撓性配線基板の製造方法および電子機器の製造方法
CN101385039B (zh) * 2006-03-15 2012-03-21 株式会社半导体能源研究所 半导体器件
CN101785086B (zh) * 2007-09-20 2012-03-21 夏普株式会社 显示装置的制造方法和叠层构造体
JP5309672B2 (ja) * 2008-04-21 2013-10-09 カシオ計算機株式会社 薄膜素子およびその製造方法
KR101702329B1 (ko) 2008-12-17 2017-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
US7994714B2 (en) * 2009-02-11 2011-08-09 Global Oled Technology Llc Display device with chiplets and light shields
JP5483151B2 (ja) * 2009-03-05 2014-05-07 カシオ計算機株式会社 薄膜素子およびその製造方法
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
KR102340066B1 (ko) * 2016-04-07 2021-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
JP6484756B2 (ja) * 2016-04-12 2019-03-13 株式会社半導体エネルギー研究所 半導体装置の作製方法、及びフレキシブルデバイスの作製方法
KR102378976B1 (ko) * 2016-05-18 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
KR102554691B1 (ko) 2016-10-07 2023-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
JP6931985B2 (ja) * 2016-10-21 2021-09-08 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6910127B2 (ja) * 2016-10-21 2021-07-28 株式会社半導体エネルギー研究所 表示装置の作製方法
JP6792405B2 (ja) * 2016-10-21 2020-11-25 株式会社半導体エネルギー研究所 表示装置の作製方法
WO2018087631A1 (en) * 2016-11-09 2018-05-17 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for manufacturing the display device

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