JP3723794B2 - プラズマ表面処理装置の電極構造 - Google Patents

プラズマ表面処理装置の電極構造 Download PDF

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Publication number
JP3723794B2
JP3723794B2 JP2002294127A JP2002294127A JP3723794B2 JP 3723794 B2 JP3723794 B2 JP 3723794B2 JP 2002294127 A JP2002294127 A JP 2002294127A JP 2002294127 A JP2002294127 A JP 2002294127A JP 3723794 B2 JP3723794 B2 JP 3723794B2
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electrode
plasma
dielectric
surface treatment
treatment apparatus
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JP2002294127A
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Japanese (ja)
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JP2004127853A (ja
JP2004127853A5 (enExample
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裕也 北畠
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Publication of JP2004127853A5 publication Critical patent/JP2004127853A5/ja
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  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2002294127A 2002-10-07 2002-10-07 プラズマ表面処理装置の電極構造 Expired - Fee Related JP3723794B2 (ja)

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JP2002294127A JP3723794B2 (ja) 2002-10-07 2002-10-07 プラズマ表面処理装置の電極構造

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JP2002294127A JP3723794B2 (ja) 2002-10-07 2002-10-07 プラズマ表面処理装置の電極構造

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JP2004127853A JP2004127853A (ja) 2004-04-22
JP2004127853A5 JP2004127853A5 (enExample) 2005-08-11
JP3723794B2 true JP3723794B2 (ja) 2005-12-07

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110997127A (zh) * 2017-08-09 2020-04-10 春日电机株式会社 表面改质装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4398330B2 (ja) * 2004-09-02 2010-01-13 株式会社イー・スクエア プラズマ表面処理装置
US20060054279A1 (en) * 2004-09-10 2006-03-16 Yunsang Kim Apparatus for the optimization of atmospheric plasma in a processing system
JP4968883B2 (ja) * 2006-03-30 2012-07-04 日本碍子株式会社 リモート式プラズマ処理装置
JP2008277774A (ja) * 2007-04-03 2008-11-13 Sekisui Chem Co Ltd プラズマ処理装置
KR101534130B1 (ko) * 2008-09-05 2015-07-07 주성엔지니어링(주) 금속 산화물 증착 장치
JP4540731B2 (ja) * 2008-09-29 2010-09-08 積水化学工業株式会社 表面処理用ノズル装置
JP5121652B2 (ja) * 2008-09-29 2013-01-16 積水化学工業株式会社 表面処理用ノズル装置
JP2011134871A (ja) * 2009-12-24 2011-07-07 Shin Etsu Handotai Co Ltd エピタキシャル成長装置及びエピタキシャル成長装置の製造方法
JP5771372B2 (ja) * 2010-08-02 2015-08-26 株式会社アルバック プラズマ処理装置及び前処理方法
JP5413421B2 (ja) * 2011-08-10 2014-02-12 パナソニック株式会社 誘導結合型プラズマ処理装置及び方法
EP2960358A1 (en) * 2014-06-25 2015-12-30 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Plasma source and surface treatment method
JP6628065B2 (ja) * 2016-09-05 2020-01-08 信越半導体株式会社 気相成長装置、エピタキシャルウェーハの製造方法及び気相成長装置用のアタッチメント

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6319571U (enExample) * 1986-07-23 1988-02-09
JP2537304B2 (ja) * 1989-12-07 1996-09-25 新技術事業団 大気圧プラズマ反応方法とその装置
JP2595744Y2 (ja) * 1992-05-12 1999-06-02 宮城沖電気株式会社 半導体製造装置
JP3147137B2 (ja) * 1993-05-14 2001-03-19 セイコーエプソン株式会社 表面処理方法及びその装置、半導体装置の製造方法及びその装置、並びに液晶ディスプレイの製造方法
JPH0762546A (ja) * 1993-08-25 1995-03-07 Shinko Electric Co Ltd 大気圧プラズマ表面処理装置
JP3653824B2 (ja) * 1995-09-22 2005-06-02 セイコーエプソン株式会社 表面処理装置
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
JP2002176050A (ja) * 2000-12-05 2002-06-21 Sekisui Chem Co Ltd 酸化珪素膜の形成方法及びその装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110997127A (zh) * 2017-08-09 2020-04-10 春日电机株式会社 表面改质装置
CN110997127B (zh) * 2017-08-09 2021-12-21 春日电机株式会社 表面改质装置

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