JP3723124B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

Info

Publication number
JP3723124B2
JP3723124B2 JP2001381928A JP2001381928A JP3723124B2 JP 3723124 B2 JP3723124 B2 JP 3723124B2 JP 2001381928 A JP2001381928 A JP 2001381928A JP 2001381928 A JP2001381928 A JP 2001381928A JP 3723124 B2 JP3723124 B2 JP 3723124B2
Authority
JP
Japan
Prior art keywords
semiconductor region
imaging device
solid
state imaging
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001381928A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003188367A (ja
JP2003188367A5 (enrdf_load_stackoverflow
Inventor
宏明 石渡
浩史 山下
鉄也 山口
秀俊 野崎
久典 井原
長孝 田中
雄一郎 江木
昌之 綾部
幸雄 遠藤
宗平 真鍋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001381928A priority Critical patent/JP3723124B2/ja
Publication of JP2003188367A publication Critical patent/JP2003188367A/ja
Publication of JP2003188367A5 publication Critical patent/JP2003188367A5/ja
Application granted granted Critical
Publication of JP3723124B2 publication Critical patent/JP3723124B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2001381928A 2001-12-14 2001-12-14 固体撮像装置 Expired - Fee Related JP3723124B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001381928A JP3723124B2 (ja) 2001-12-14 2001-12-14 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001381928A JP3723124B2 (ja) 2001-12-14 2001-12-14 固体撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004344712A Division JP2005129965A (ja) 2004-11-29 2004-11-29 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2003188367A JP2003188367A (ja) 2003-07-04
JP2003188367A5 JP2003188367A5 (enrdf_load_stackoverflow) 2005-04-28
JP3723124B2 true JP3723124B2 (ja) 2005-12-07

Family

ID=27592456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001381928A Expired - Fee Related JP3723124B2 (ja) 2001-12-14 2001-12-14 固体撮像装置

Country Status (1)

Country Link
JP (1) JP3723124B2 (enrdf_load_stackoverflow)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101596A (ja) * 2003-09-03 2005-04-14 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラ
JP4758061B2 (ja) * 2003-10-16 2011-08-24 パナソニック株式会社 固体撮像装置およびその製造方法
KR100619396B1 (ko) 2003-12-31 2006-09-11 동부일렉트로닉스 주식회사 시모스 이미지 센서 및 그 제조방법
WO2005083790A1 (ja) * 2004-02-27 2005-09-09 Texas Instruments Japan Limited 固体撮像装置、ラインセンサ、光センサおよび固体撮像装置の動作方法
JP3727639B2 (ja) * 2004-04-16 2005-12-14 松下電器産業株式会社 固体撮像装置
JP2005327858A (ja) * 2004-05-13 2005-11-24 Matsushita Electric Ind Co Ltd 固体撮像装置
DE102005026629B4 (de) 2004-06-04 2014-07-10 Samsung Electronics Co., Ltd. Bildsensor und zugehöriges Herstellungsverfahren
KR100761824B1 (ko) * 2004-06-04 2007-09-28 삼성전자주식회사 이미지 센서 및 그 제조 방법
US7271430B2 (en) * 2004-06-04 2007-09-18 Samsung Electronics Co., Ltd. Image sensors for reducing dark current and methods of fabricating the same
JP4935354B2 (ja) * 2004-07-20 2012-05-23 富士通セミコンダクター株式会社 Cmos撮像素子
KR100614650B1 (ko) * 2004-09-16 2006-08-22 삼성전자주식회사 이미지 센서 및 그 형성 방법
JP4595464B2 (ja) 2004-09-22 2010-12-08 ソニー株式会社 Cmos固体撮像素子の製造方法
JP4742661B2 (ja) * 2005-04-25 2011-08-10 ソニー株式会社 固体撮像素子の製造方法
EP1722421A3 (fr) * 2005-05-13 2007-04-18 Stmicroelectronics Sa Photodiode intégrée de type à substrat flottant
US7141836B1 (en) * 2005-05-31 2006-11-28 International Business Machines Corporation Pixel sensor having doped isolation structure sidewall
KR100699849B1 (ko) 2005-06-21 2007-03-27 삼성전자주식회사 국부적인 불순물 영역을 갖는 cmos 이미지 소자 및 그제조방법
JP4953635B2 (ja) * 2006-01-06 2012-06-13 キヤノン株式会社 固体撮像素子の製造方法
JP2006222452A (ja) * 2006-04-24 2006-08-24 Matsushita Electric Ind Co Ltd 固体撮像装置
JP5063223B2 (ja) 2007-07-02 2012-10-31 キヤノン株式会社 光電変換装置及び撮像システム
JP2011009466A (ja) * 2009-06-25 2011-01-13 Sony Corp 固体撮像装置及び電子機器
JP5295188B2 (ja) * 2010-08-27 2013-09-18 キヤノン株式会社 光電変換装置、その製造方法及び撮像システム
JP5456644B2 (ja) * 2010-11-17 2014-04-02 本田技研工業株式会社 受光素子及び制御方法
TW201415613A (zh) * 2012-08-02 2014-04-16 Sony Corp 固體攝像裝置、固體攝像裝置之製造方法及電子機器
JP2017130577A (ja) 2016-01-21 2017-07-27 ソニー株式会社 半導体装置およびその製造方法、固体撮像素子、並びに電子機器
JP6897740B2 (ja) * 2016-03-07 2021-07-07 株式会社リコー 画素ユニット、及び撮像素子
JP6842240B2 (ja) * 2016-03-07 2021-03-17 株式会社リコー 画素ユニット、及び撮像素子
JP6862129B2 (ja) * 2016-08-29 2021-04-21 キヤノン株式会社 光電変換装置および撮像システム
JP6701108B2 (ja) * 2017-03-21 2020-05-27 キヤノン株式会社 固体撮像装置及び撮像システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3329291B2 (ja) * 1998-02-06 2002-09-30 日本電気株式会社 電荷転送装置
KR100278285B1 (ko) * 1998-02-28 2001-01-15 김영환 씨모스 이미지센서 및 그 제조방법
JP3600430B2 (ja) * 1998-03-19 2004-12-15 株式会社東芝 固体撮像装置
JP3403061B2 (ja) * 1998-03-31 2003-05-06 株式会社東芝 固体撮像装置
JP2000091551A (ja) * 1998-09-11 2000-03-31 Toshiba Corp 固体撮像装置およびその製造方法

Also Published As

Publication number Publication date
JP2003188367A (ja) 2003-07-04

Similar Documents

Publication Publication Date Title
JP3723124B2 (ja) 固体撮像装置
KR102674895B1 (ko) 이미지 센서 및 이의 제조 방법
US6974715B2 (en) Method for manufacturing CMOS image sensor using spacer etching barrier film
US7232712B2 (en) CMOS image sensor and method for fabricating the same
JP3782297B2 (ja) 固体撮像装置及びその製造方法
JP4340248B2 (ja) 半導体撮像装置を製造する方法
US7675100B2 (en) CMOS image sensor and method for fabricating the same
EP1703564B1 (en) Image sensor with embedded photodiode region
CN1812112B (zh) 具有非平面晶体管的固态图像传感器设备及其制造方法
US9111829B2 (en) Color-optimized image sensor
US7256469B2 (en) Solid-state image pickup device
CN102074563A (zh) 具有增强的背面照明量子效率的图像传感器
US20060273355A1 (en) CMOS image sensor and method for manufacturing the same
US8828775B2 (en) Image sensor and method for fabricating same
JP2921567B1 (ja) 固体撮像装置およびその製造方法
JP2005129965A (ja) 固体撮像装置
CN100426512C (zh) 固态成像装置
US7485939B2 (en) Solid-state imaging device having a defect control layer and an inversion layer between a trench and a charge accumulating area
JP4398917B2 (ja) 固体撮像装置及びその製造方法
US7572663B2 (en) Method for manufacturing CMOS image sensor
JPH08255888A (ja) 固体撮像装置およびその製造方法
US20070145443A1 (en) CMOS Image Sensor and Method of Manufacturing the Same
US7598135B2 (en) Method for fabricating CMOS image sensor
KR20050106932A (ko) 이미지센서 및 그 제조방법
CN118693120A (zh) 一种图像传感器及其制作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040617

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040617

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20040818

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20040916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040928

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050322

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050517

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050906

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050914

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080922

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090922

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090922

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100922

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110922

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110922

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120922

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120922

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130922

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees