JP3695515B2 - トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法 - Google Patents

トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法 Download PDF

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Publication number
JP3695515B2
JP3695515B2 JP27128299A JP27128299A JP3695515B2 JP 3695515 B2 JP3695515 B2 JP 3695515B2 JP 27128299 A JP27128299 A JP 27128299A JP 27128299 A JP27128299 A JP 27128299A JP 3695515 B2 JP3695515 B2 JP 3695515B2
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Prior art keywords
magnetic layer
layer
tunnel
magnetic
plane
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Expired - Lifetime
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JP27128299A
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Japanese (ja)
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JP2001093119A (ja
JP2001093119A5 (https=
Inventor
俊彦 佐藤
新治 湯浅
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Hitachi Ltd
National Institute of Advanced Industrial Science and Technology AIST
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Hitachi Ltd
National Institute of Advanced Industrial Science and Technology AIST
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Priority to JP27128299A priority Critical patent/JP3695515B2/ja
Priority to US09/666,608 priority patent/US6710986B1/en
Publication of JP2001093119A publication Critical patent/JP2001093119A/ja
Publication of JP2001093119A5 publication Critical patent/JP2001093119A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1157—Substrate composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12639—Adjacent, identical composition, components
    • Y10T428/12646—Group VIII or IB metal-base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12951—Fe-base component
    • Y10T428/12958—Next to Fe-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP27128299A 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法 Expired - Lifetime JP3695515B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27128299A JP3695515B2 (ja) 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法
US09/666,608 US6710986B1 (en) 1999-09-24 2000-09-20 Tunneling magnetoresistive head and a process of tunneling magnetoresistive head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27128299A JP3695515B2 (ja) 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001093119A JP2001093119A (ja) 2001-04-06
JP2001093119A5 JP2001093119A5 (https=) 2004-11-04
JP3695515B2 true JP3695515B2 (ja) 2005-09-14

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JP27128299A Expired - Lifetime JP3695515B2 (ja) 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法

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JP (1) JP3695515B2 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US6992869B2 (en) * 2001-02-06 2006-01-31 Yamaha Corporation Magnetic resistance device
KR100886602B1 (ko) 2001-05-31 2009-03-05 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 터널자기저항소자
JP4812203B2 (ja) * 2001-09-25 2011-11-09 トヨタ自動車株式会社 アレイ型センサ
JP2004071897A (ja) * 2002-08-07 2004-03-04 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
US6881993B2 (en) * 2002-08-28 2005-04-19 Micron Technology, Inc. Device having reduced diffusion through ferromagnetic materials
US6841395B2 (en) * 2002-11-25 2005-01-11 International Business Machines Corporation Method of forming a barrier layer of a tunneling magnetoresistive sensor
JP2005041835A (ja) * 2003-07-24 2005-02-17 Fuji Xerox Co Ltd カーボンナノチューブ構造体、その製造方法、カーボンナノチューブ転写体および溶液
KR100612854B1 (ko) * 2004-07-31 2006-08-21 삼성전자주식회사 스핀차지를 이용한 자성막 구조체와 그 제조 방법과 그를구비하는 반도체 장치 및 이 장치의 동작방법
JP2006114610A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP4261454B2 (ja) * 2004-10-13 2009-04-30 株式会社東芝 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP4764294B2 (ja) * 2006-09-08 2011-08-31 株式会社東芝 磁気抵抗効果素子、及び磁気ヘッド
US7911741B2 (en) * 2007-04-30 2011-03-22 Hitachi Global Storage Technologies, Netherlands, B.V. Slider overcoat for noise reduction of TMR magnetic transducer
US7855861B2 (en) * 2007-04-30 2010-12-21 Hitachi Global Storage Technologies, Netherlands, B.V. Insulator barrier for noise reduction of a TMR magnetic transducer
US8325450B2 (en) * 2008-12-10 2012-12-04 Hitachi Global Storage Technologies Netherlands B.V. Low resistance tunnel magnetoresistance (TMR) structure
JP5512140B2 (ja) * 2009-01-30 2014-06-04 日本電信電話株式会社 キャパシタ構造及び半導体素子
JP4902686B2 (ja) * 2009-04-06 2012-03-21 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP2012054576A (ja) * 2011-10-12 2012-03-15 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
JP5598575B2 (ja) * 2013-06-19 2014-10-01 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
US9779865B2 (en) * 2014-10-17 2017-10-03 The Arizona Board Of Regents On Behalf Of The University Of Arizona Voltage-controlled magnetic devices
JPWO2017115839A1 (ja) * 2015-12-28 2018-11-29 コニカミノルタ株式会社 磁気センサー、センサーユニット、磁気検出装置、及び磁気計測装置
US9947862B2 (en) 2016-03-14 2018-04-17 Toshiba Memory Corporation Magnetoresistive memory device
US10153423B2 (en) * 2017-01-06 2018-12-11 SK Hynix Inc. Electronic device
WO2018179961A1 (ja) * 2017-03-30 2018-10-04 国立研究開発法人産業技術総合研究所 磁気素子、磁気記憶装置及び磁気センサ
US10818346B2 (en) 2018-09-17 2020-10-27 Northrop Grumman Systems Corporation Quantizing loop memory cell system
US11211117B2 (en) 2019-01-24 2021-12-28 Northrop Grumman Systems Corporation Ferrimagnetic/ferromagnetic exchange bilayers for use as a fixed magnetic layer in a superconducting-based memory device
US10885974B2 (en) 2019-01-30 2021-01-05 Northrop Grumman Systems Corporation Superconducting switch
US10879447B2 (en) * 2019-03-13 2020-12-29 Northrop Grumman Systems Corporation Repeating alternating multilayer buffer layer
US11024791B1 (en) 2020-01-27 2021-06-01 Northrop Grumman Systems Corporation Magnetically stabilized magnetic Josephson junction memory cell
US11342491B2 (en) 2020-09-28 2022-05-24 Northrop Grumman Systems Corporation Magnetic Josephson junction system
US11444233B1 (en) 2021-03-31 2022-09-13 Northrop Grumman Systems Corporation Josephson magnetic memory cell with ferrimagnetic layers having orthogonal magnetic polarity

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP2924798B2 (ja) * 1996-07-12 1999-07-26 日本電気株式会社 磁気抵抗効果薄膜
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
US6452204B1 (en) * 1998-12-08 2002-09-17 Nec Corporation Tunneling magnetoresistance transducer and method for manufacturing the same

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JP2001093119A (ja) 2001-04-06

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