JP2001093119A5 - - Google Patents

Download PDF

Info

Publication number
JP2001093119A5
JP2001093119A5 JP1999271282A JP27128299A JP2001093119A5 JP 2001093119 A5 JP2001093119 A5 JP 2001093119A5 JP 1999271282 A JP1999271282 A JP 1999271282A JP 27128299 A JP27128299 A JP 27128299A JP 2001093119 A5 JP2001093119 A5 JP 2001093119A5
Authority
JP
Japan
Prior art keywords
magnetic layer
plane
layer
tunnel
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999271282A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001093119A (ja
JP3695515B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP27128299A priority Critical patent/JP3695515B2/ja
Priority claimed from JP27128299A external-priority patent/JP3695515B2/ja
Priority to US09/666,608 priority patent/US6710986B1/en
Publication of JP2001093119A publication Critical patent/JP2001093119A/ja
Publication of JP2001093119A5 publication Critical patent/JP2001093119A5/ja
Application granted granted Critical
Publication of JP3695515B2 publication Critical patent/JP3695515B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP27128299A 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法 Expired - Lifetime JP3695515B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP27128299A JP3695515B2 (ja) 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法
US09/666,608 US6710986B1 (en) 1999-09-24 2000-09-20 Tunneling magnetoresistive head and a process of tunneling magnetoresistive head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27128299A JP3695515B2 (ja) 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001093119A JP2001093119A (ja) 2001-04-06
JP2001093119A5 true JP2001093119A5 (https=) 2004-11-04
JP3695515B2 JP3695515B2 (ja) 2005-09-14

Family

ID=17497905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27128299A Expired - Lifetime JP3695515B2 (ja) 1999-09-24 1999-09-24 トンネル磁気抵抗効果素子、磁気ヘッド、磁気メモリ及びその製造方法

Country Status (2)

Country Link
US (1) US6710986B1 (https=)
JP (1) JP3695515B2 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
US6992869B2 (en) * 2001-02-06 2006-01-31 Yamaha Corporation Magnetic resistance device
US7220498B2 (en) 2001-05-31 2007-05-22 National Institute Of Advanced Industrial Science And Technology Tunnel magnetoresistance element
JP4812203B2 (ja) * 2001-09-25 2011-11-09 トヨタ自動車株式会社 アレイ型センサ
JP2004071897A (ja) * 2002-08-07 2004-03-04 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
US6881993B2 (en) * 2002-08-28 2005-04-19 Micron Technology, Inc. Device having reduced diffusion through ferromagnetic materials
US6841395B2 (en) * 2002-11-25 2005-01-11 International Business Machines Corporation Method of forming a barrier layer of a tunneling magnetoresistive sensor
JP2005041835A (ja) * 2003-07-24 2005-02-17 Fuji Xerox Co Ltd カーボンナノチューブ構造体、その製造方法、カーボンナノチューブ転写体および溶液
KR100612854B1 (ko) * 2004-07-31 2006-08-21 삼성전자주식회사 스핀차지를 이용한 자성막 구조체와 그 제조 방법과 그를구비하는 반도체 장치 및 이 장치의 동작방법
JP4261454B2 (ja) * 2004-10-13 2009-04-30 株式会社東芝 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP2006114610A (ja) * 2004-10-13 2006-04-27 Toshiba Corp 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気再生装置
JP4764294B2 (ja) * 2006-09-08 2011-08-31 株式会社東芝 磁気抵抗効果素子、及び磁気ヘッド
US7911741B2 (en) * 2007-04-30 2011-03-22 Hitachi Global Storage Technologies, Netherlands, B.V. Slider overcoat for noise reduction of TMR magnetic transducer
US7855861B2 (en) * 2007-04-30 2010-12-21 Hitachi Global Storage Technologies, Netherlands, B.V. Insulator barrier for noise reduction of a TMR magnetic transducer
US8325450B2 (en) * 2008-12-10 2012-12-04 Hitachi Global Storage Technologies Netherlands B.V. Low resistance tunnel magnetoresistance (TMR) structure
JP5512140B2 (ja) * 2009-01-30 2014-06-04 日本電信電話株式会社 キャパシタ構造及び半導体素子
JP4902686B2 (ja) * 2009-04-06 2012-03-21 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
JP2012054576A (ja) * 2011-10-12 2012-03-15 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
JP5598575B2 (ja) * 2013-06-19 2014-10-01 ソニー株式会社 磁気抵抗効果素子及び磁気メモリ装置
US9779865B2 (en) * 2014-10-17 2017-10-03 The Arizona Board Of Regents On Behalf Of The University Of Arizona Voltage-controlled magnetic devices
WO2017115839A1 (ja) * 2015-12-28 2017-07-06 コニカミノルタ株式会社 磁気センサー、センサーユニット、磁気検出装置、及び磁気計測装置
US9947862B2 (en) 2016-03-14 2018-04-17 Toshiba Memory Corporation Magnetoresistive memory device
US10153423B2 (en) * 2017-01-06 2018-12-11 SK Hynix Inc. Electronic device
JP6799300B2 (ja) * 2017-03-30 2020-12-16 国立研究開発法人産業技術総合研究所 磁気素子、磁気記憶装置及び磁気センサ
US10818346B2 (en) 2018-09-17 2020-10-27 Northrop Grumman Systems Corporation Quantizing loop memory cell system
US11211117B2 (en) 2019-01-24 2021-12-28 Northrop Grumman Systems Corporation Ferrimagnetic/ferromagnetic exchange bilayers for use as a fixed magnetic layer in a superconducting-based memory device
US10885974B2 (en) 2019-01-30 2021-01-05 Northrop Grumman Systems Corporation Superconducting switch
US10879447B2 (en) * 2019-03-13 2020-12-29 Northrop Grumman Systems Corporation Repeating alternating multilayer buffer layer
US11024791B1 (en) 2020-01-27 2021-06-01 Northrop Grumman Systems Corporation Magnetically stabilized magnetic Josephson junction memory cell
US11342491B2 (en) 2020-09-28 2022-05-24 Northrop Grumman Systems Corporation Magnetic Josephson junction system
US11444233B1 (en) 2021-03-31 2022-09-13 Northrop Grumman Systems Corporation Josephson magnetic memory cell with ferrimagnetic layers having orthogonal magnetic polarity

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JP2924798B2 (ja) * 1996-07-12 1999-07-26 日本電気株式会社 磁気抵抗効果薄膜
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
US6452204B1 (en) * 1998-12-08 2002-09-17 Nec Corporation Tunneling magnetoresistance transducer and method for manufacturing the same

Similar Documents

Publication Publication Date Title
JP2001093119A5 (https=)
JP4421822B2 (ja) ボトムスピンバルブ磁気抵抗効果センサ素子およびその製造方法
CN101542767B (zh) 隧道磁阻薄膜及磁性多层膜制作装置
JP4975335B2 (ja) 磁気抵抗効果素子，磁気ヘッド，および磁気記録再生装置
JP4388093B2 (ja) 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
US6873500B2 (en) Exchange coupling film capable of improving playback characteristics
JP2002110938A (ja) 磁気記憶装置
JP2001093119A (ja) トンネル磁気抵抗効果型磁気ヘッド及びその製造方法
US20020036315A1 (en) Magnetoresistive element and magnetoresistive device using the same
JP2007142424A (ja) トンネルバリア層の形成方法、ならびにｔｍｒセンサおよびその製造方法
JP2008103662A (ja) トンネル型磁気検出素子及びその製造方法
TW201143179A (en) Magnetic memory element and magnetic memory device
JPWO2009054062A1 (ja) サンドイッチ構造の磁化自由層を有する磁気トンネル接合素子
JP3908557B2 (ja) 磁気検出素子の製造方法
TW579502B (en) Magnetic multilayer structure with improved magnetic field range
JPH11135857A (ja) 磁気抵抗効果素子及びその製造方法
JP2004220692A5 (https=)
JP2005191101A (ja) 磁気抵抗効果素子及び磁気ヘッド
JP2001094173A (ja) 磁気センサー、磁気ヘッド及び磁気ディスク装置
WO2000052489A1 (en) Magnetic sensor and its production method, ferromagnetic tunnel junction device and its production method, and magnetic head using the same
JP2008227297A (ja) トンネル型磁気検出素子及びその製造方法
JP2000150985A (ja) 磁気抵抗効果素子
JP2008192827A (ja) トンネル型磁気検出素子
JP3872958B2 (ja) 磁気抵抗効果素子及びその製造方法
JP5113163B2 (ja) トンネル型磁気検出素子