JP5113163B2 - トンネル型磁気検出素子 - Google Patents
トンネル型磁気検出素子 Download PDFInfo
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- JP5113163B2 JP5113163B2 JP2009515126A JP2009515126A JP5113163B2 JP 5113163 B2 JP5113163 B2 JP 5113163B2 JP 2009515126 A JP2009515126 A JP 2009515126A JP 2009515126 A JP2009515126 A JP 2009515126A JP 5113163 B2 JP5113163 B2 JP 5113163B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1114—Magnetoresistive having tunnel junction effect
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1143—Magnetoresistive with defined structural feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1193—Magnetic recording head with interlaminar component [e.g., adhesion layer, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Description
前記絶縁障壁層は、Mg−Oで形成され、
前記下地層はTiで形成され、前記シード層は、組成式が、{NixFe100−x}100−yCry(原子比率xは75〜85、Cr組成比yは、30〜40の範囲内)で表される、Ni−Fe−Crにより形成されており、
前記固定磁性層は、下から第1固定磁性層、非磁性中間層、第2固定磁性層の順に積層された積層フェリ構造であり、
前記フリー磁性層は、下からエンハンス層、軟磁性層の順に積層されており、前記エンハンス層は前記軟磁性層よりもスピン分極率が高い材質で形成されており、
前記第2固定磁性層、前記絶縁障壁層及び前記エンハンス層の積層部分は、界面と平行な面方向に、代表的に{100}面として表される等価な結晶面が優先配向した体心立方構造(bcc構造)により形成されており、
RAが、2〜5Ω・μm 2の範囲内であることを特徴とするものである。
前記反強磁性層3上には固定磁性層4が形成されている。前記固定磁性層4は、下から第1固定磁性層4a、非磁性中間層4b、第2固定磁性層4cの順で積層された積層フェリ構造である。前記反強磁性層3との界面での交換結合磁界(Hex)及び非磁性中間層4bを介した反強磁性的交換結合磁界(RKKY的相互作用)により前記第1固定磁性層4aと第2固定磁性層4cの磁化方向は互いに反平行状態にされる。前記固定磁性層4を積層フェリ構造で形成することにより前記固定磁性層4の磁化を安定した状態にできる。また前記固定磁性層4と反強磁性層3との界面で発生する交換結合磁界を見かけ上大きくすることができる。なお前記第1固定磁性層4a及び第2固定磁性層4cは、夫々、例えば10〜40Å程度で形成され、非磁性中間層4bは8Å〜10Å程度で形成される。
前記フリー磁性層8上にはTa等で形成された保護層9が形成されている。
本実施形態では前記絶縁障壁層5はMg−O(酸化マグネシウム)で形成されている。
以上により下地層1から保護層9までが積層された積層体T1を形成する。
図1に示すトンネル型磁気抵抗効果素子を形成した。
積層体T1を、下から、下地層1/シード層2/反強磁性層3;Ir26at%Mn74at%(70)/固定磁性層4[第1固定磁性層4a;Fe30at%Co70at%(14)/非磁性中間層4b;Ru(9.1)/第2固定磁性層4c;{Co50Fe50}80at%B20at%(18)]/絶縁障壁層5;Mg50at%O50at%(9〜12)/フリー磁性層8[エンハンス層6;Fe50at%Co50at%(10)/軟磁性層7;Ni87at%Fe13at%(50)/保護層9;[Ru(20)/Ta(280)]の順に積層した。
上記の積層体における各層の括弧内の数値は平均膜厚を示し単位はÅである。
前記積層体を形成した後、270℃で3時間40分間、熱処理を行った。
上記の実施例の積層体のうち、下地層1を平均膜厚が30ÅのTaで形成し、さらに、シード層2を平均膜厚が50Åの{Ni80Fe20}64.4at%Cr35.6at%で形成した試料を従来例1とした。また、下地層1を平均膜厚が30ÅのTaで形成し、さらに、シード層2を平均膜厚が40ÅのRuで形成した試料を従来例2とした。
絶縁障壁層をTi−Mg−Oで形成したトンネル型磁気検出素子を形成した。
上記の積層体における各層の括弧内の数値は平均膜厚を示し単位はÅである。
前記積層体を形成した後、270℃で3時間40分間、熱処理を行った。
上記の比較例1,2の積層体のうち、下地層1を平均膜厚が30ÅのTaで形成し、さらに、シード層2を平均膜厚が50Åの{Ni80Fe20}64.4at%Cr35.6at%で形成した試料を従来例3とした。また、下地層1を平均膜厚が30ÅのTaで形成し、さらに、シード層2を平均膜厚が40ÅのRuで形成した試料を従来例4とした。
絶縁障壁層をAl−Oで形成したトンネル型磁気検出素子を形成した。
上記の積層体における各層の括弧内の数値は平均膜厚を示し単位はÅである。
前記積層体を形成した後、270℃で3時間40分間、熱処理を行った。
上記の比較例3の積層体のうち、下地層を平均膜厚が20ÅのTaで形成し、さらに、シード層2を平均膜厚が30ÅのRuで形成した試料を従来例5とした。
2 シード層
3 反強磁性層
4 固定磁性層
4a 第1固定磁性層
4b 非磁性中間層
4c 第2固定磁性層
5 絶縁障壁層
6 エンハンス層
7 軟磁性層
8 フリー磁性層
9、24 保護層
21 下部シールド層
22 絶縁層
23 ハードバイアス層
26 上部シールド層
30 レジスト層
T1 積層体
Claims (3)
- 下から、下地層、シード層、反強磁性層、固定磁性層、絶縁障壁層、及び、フリー磁性層の順に積層される積層部分を備えた積層体を有し、
前記絶縁障壁層は、Mg−Oで形成され、
前記下地層はTiで形成され、前記シード層は、組成式が、{NixFe100−x}100−yCry(原子比率xは75〜85、Cr組成比yは、30〜40の範囲内)で表される、Ni−Fe−Crにより形成されており、
前記固定磁性層は、下から第1固定磁性層、非磁性中間層、第2固定磁性層の順に積層された積層フェリ構造であり、
前記フリー磁性層は、下からエンハンス層、軟磁性層の順に積層されており、前記エンハンス層は前記軟磁性層よりもスピン分極率が高い材質で形成されており、
前記第2固定磁性層、前記絶縁障壁層及び前記エンハンス層の積層部分は、界面と平行な面方向に、代表的に{100}面として表される等価な結晶面が優先配向した体心立方構造(bcc構造)により形成されており、
RAが、2〜5Ω・μm 2の範囲内であることを特徴とするトンネル型磁気検出素子。 - 前記下地層の平均膜厚は10Å以上で100Å以下の範囲内で形成される請求項1記載のトンネル型磁気検出素子。
- 前記第2固定磁性層は、Co−Fe−Bの単層構造、あるいは、下からCo−Fe−BとCo−Feの順に積層された積層構造で形成され、Co−Fe−Bは、組成式が(CoβFe100−β)100−γBγからなり、原子比率βは、0〜75、組成比γは10〜30at%で形成される請求項1又は2に記載のトンネル型磁気検出素子。
Priority Applications (1)
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JP2009515126A JP5113163B2 (ja) | 2007-05-11 | 2008-04-30 | トンネル型磁気検出素子 |
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JP2007126420 | 2007-05-11 | ||
JP2007126420 | 2007-05-11 | ||
PCT/JP2008/058244 WO2008142965A1 (ja) | 2007-05-11 | 2008-04-30 | トンネル型磁気検出素子 |
JP2009515126A JP5113163B2 (ja) | 2007-05-11 | 2008-04-30 | トンネル型磁気検出素子 |
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JPWO2008142965A1 JPWO2008142965A1 (ja) | 2010-08-05 |
JP5113163B2 true JP5113163B2 (ja) | 2013-01-09 |
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US (1) | US8124253B2 (ja) |
JP (1) | JP5113163B2 (ja) |
WO (1) | WO2008142965A1 (ja) |
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US8125746B2 (en) * | 2009-07-13 | 2012-02-28 | Seagate Technology Llc | Magnetic sensor with perpendicular anisotrophy free layer and side shields |
US8779538B2 (en) | 2009-08-10 | 2014-07-15 | Samsung Electronics Co., Ltd. | Magnetic tunneling junction seed, capping, and spacer layer materials |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004006589A (ja) * | 2002-03-28 | 2004-01-08 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
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JP2778626B2 (ja) * | 1995-06-02 | 1998-07-23 | 日本電気株式会社 | 磁気抵抗効果膜及びその製造方法並びに磁気抵抗効果素子 |
JP3593472B2 (ja) | 1998-06-30 | 2004-11-24 | 株式会社東芝 | 磁気素子とそれを用いた磁気メモリおよび磁気センサ |
JP3472207B2 (ja) | 1999-09-09 | 2003-12-02 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
JP2001156357A (ja) | 1999-09-16 | 2001-06-08 | Toshiba Corp | 磁気抵抗効果素子および磁気記録素子 |
US20030231437A1 (en) * | 2002-06-17 | 2003-12-18 | Childress Jeffrey R. | Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication |
JPWO2006006420A1 (ja) * | 2004-07-12 | 2008-04-24 | 日本電気株式会社 | 磁気抵抗効素子、磁気ランダムアクセスメモリ、磁気ヘッド及び磁気記憶装置 |
JP2007005417A (ja) * | 2005-06-22 | 2007-01-11 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
JP2007096105A (ja) * | 2005-09-29 | 2007-04-12 | Toshiba Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記憶装置、および磁気メモリ |
US20080055792A1 (en) * | 2006-03-07 | 2008-03-06 | Agency For Science, Technology And Research | Memory cells and devices having magnetoresistive tunnel junction with guided magnetic moment switching and method |
JP2008085208A (ja) * | 2006-09-28 | 2008-04-10 | Fujitsu Ltd | トンネル磁気抵抗素子、磁気ヘッドおよび磁気メモリ |
US7715156B2 (en) * | 2007-01-12 | 2010-05-11 | Tdk Corporation | Tunnel magnetoresistive effect element and thin-film magnetic head with tunnel magnetoresistive effect read head element |
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2008
- 2008-04-30 WO PCT/JP2008/058244 patent/WO2008142965A1/ja active Application Filing
- 2008-04-30 JP JP2009515126A patent/JP5113163B2/ja not_active Expired - Fee Related
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2009
- 2009-11-10 US US12/615,689 patent/US8124253B2/en not_active Expired - Fee Related
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JP2004006589A (ja) * | 2002-03-28 | 2004-01-08 | Toshiba Corp | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
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Publication number | Publication date |
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US20100055452A1 (en) | 2010-03-04 |
JPWO2008142965A1 (ja) | 2010-08-05 |
US8124253B2 (en) | 2012-02-28 |
WO2008142965A1 (ja) | 2008-11-27 |
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